JPH0152900B2 - - Google Patents
Info
- Publication number
- JPH0152900B2 JPH0152900B2 JP14941283A JP14941283A JPH0152900B2 JP H0152900 B2 JPH0152900 B2 JP H0152900B2 JP 14941283 A JP14941283 A JP 14941283A JP 14941283 A JP14941283 A JP 14941283A JP H0152900 B2 JPH0152900 B2 JP H0152900B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- carbon
- film
- semiconductor substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052799 carbon Inorganic materials 0.000 claims description 47
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 31
- 230000000903 blocking effect Effects 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 25
- 238000002347 injection Methods 0.000 description 13
- 239000007924 injection Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000002513 implantation Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 150000001721 carbon Chemical class 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Weting (AREA)
- Formation Of Insulating Films (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14941283A JPS6041243A (ja) | 1983-08-16 | 1983-08-16 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14941283A JPS6041243A (ja) | 1983-08-16 | 1983-08-16 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6041243A JPS6041243A (ja) | 1985-03-04 |
| JPH0152900B2 true JPH0152900B2 (ru) | 1989-11-10 |
Family
ID=15474551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14941283A Granted JPS6041243A (ja) | 1983-08-16 | 1983-08-16 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6041243A (ru) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63170046U (ru) * | 1987-04-18 | 1988-11-04 | ||
| JPH01259538A (ja) * | 1988-04-11 | 1989-10-17 | Agency Of Ind Science & Technol | 酸化膜の形成方法 |
-
1983
- 1983-08-16 JP JP14941283A patent/JPS6041243A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6041243A (ja) | 1985-03-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR940008728B1 (ko) | 반도체 장치 및 그 제조방법 | |
| JPH05152293A (ja) | 段差付き壁相互接続体及びゲートの製造方法 | |
| JPH05206115A (ja) | 酸化物分離領域の製造方法 | |
| US4398964A (en) | Method of forming ion implants self-aligned with a cut | |
| US3936331A (en) | Process for forming sloped topography contact areas between polycrystalline silicon and single-crystal silicon | |
| JPS6041470B2 (ja) | 半導体装置の製造方法 | |
| US4217153A (en) | Method of manufacturing semiconductor device | |
| US3912558A (en) | Method of MOS circuit fabrication | |
| EP0076147A2 (en) | Method of producing a semiconductor device comprising an isolation region | |
| JPH0152900B2 (ru) | ||
| US5763316A (en) | Substrate isolation process to minimize junction leakage | |
| JP3062597B2 (ja) | 半導体装置の製造方法 | |
| JPH0756870B2 (ja) | 半導体装置の製造方法 | |
| JPS6213047A (ja) | 半導体装置の製造方法 | |
| KR950007422B1 (ko) | 반도체 장치의 소자격리 방법 | |
| JP2890550B2 (ja) | 半導体装置の製造方法 | |
| JPH027558A (ja) | 半導体装置およびその製造方法 | |
| JPH06177069A (ja) | 半導体装置の製造方法 | |
| JPH0389532A (ja) | 半導体装置の製造方法 | |
| JP2727576B2 (ja) | 半導体装置の製造方法 | |
| JPH0362947A (ja) | 半導体装置及びその製造方法 | |
| JPS61241941A (ja) | 半導体装置の製造方法 | |
| KR20020030338A (ko) | 반도체 장치 제조방법 | |
| JPH04309226A (ja) | 半導体装置の製造方法 | |
| JPS60251641A (ja) | 半導体装置およびその製造方法 |