JPH0150114B2 - - Google Patents

Info

Publication number
JPH0150114B2
JPH0150114B2 JP56019216A JP1921681A JPH0150114B2 JP H0150114 B2 JPH0150114 B2 JP H0150114B2 JP 56019216 A JP56019216 A JP 56019216A JP 1921681 A JP1921681 A JP 1921681A JP H0150114 B2 JPH0150114 B2 JP H0150114B2
Authority
JP
Japan
Prior art keywords
type
layer
well
potential
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56019216A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57133668A (en
Inventor
Zensuke Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56019216A priority Critical patent/JPS57133668A/ja
Publication of JPS57133668A publication Critical patent/JPS57133668A/ja
Publication of JPH0150114B2 publication Critical patent/JPH0150114B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP56019216A 1981-02-12 1981-02-12 Semiconductor memory storage Granted JPS57133668A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56019216A JPS57133668A (en) 1981-02-12 1981-02-12 Semiconductor memory storage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56019216A JPS57133668A (en) 1981-02-12 1981-02-12 Semiconductor memory storage

Publications (2)

Publication Number Publication Date
JPS57133668A JPS57133668A (en) 1982-08-18
JPH0150114B2 true JPH0150114B2 (en。) 1989-10-27

Family

ID=11993173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56019216A Granted JPS57133668A (en) 1981-02-12 1981-02-12 Semiconductor memory storage

Country Status (1)

Country Link
JP (1) JPS57133668A (en。)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995011492A1 (fr) * 1993-10-21 1995-04-27 Omron Corporation Systeme d'entree de caracteres capable d'entrer des caracteres de deux manieres et roc utilise a cet effet

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136253A (ja) * 1983-12-24 1985-07-19 Toshiba Corp Ｃ−ｍｏｓ半導体メモリ
US4646425A (en) * 1984-12-10 1987-03-03 Solid State Scientific, Inc. Method for making a self-aligned CMOS EPROM wherein the EPROM floating gate and CMOS gates are made from one polysilicon layer
FR2577338B1 (fr) * 1985-02-12 1987-03-06 Eurotechnique Sa Procede de fabrication d'une memoire dynamique en circuit integre et memoire obtenue par ce procede
JPS6251252A (ja) * 1985-08-30 1987-03-05 Toshiba Corp ランダムアクセスメモリ
JPS6251251A (ja) * 1985-08-30 1987-03-05 Toshiba Corp スタテイツク型ランダムアクセスメモリ
US6740958B2 (en) 1985-09-25 2004-05-25 Renesas Technology Corp. Semiconductor memory device
US5324982A (en) 1985-09-25 1994-06-28 Hitachi, Ltd. Semiconductor memory device having bipolar transistor and structure to avoid soft error
JPH01109762A (ja) * 1987-10-22 1989-04-26 Oki Electric Ind Co Ltd 半導体メモリ装置
JPH01253264A (ja) * 1988-03-31 1989-10-09 Sharp Corp 半導体集積回路
JPH0267759A (ja) * 1988-09-01 1990-03-07 Nec Corp 半導体記憶装置
JP2503707B2 (ja) * 1990-02-07 1996-06-05 三菱電機株式会社 半導体記憶装置
US5696721A (en) * 1995-05-05 1997-12-09 Texas Instruments Incorporated Dynamic random access memory having row decoder with level translator for driving a word line voltage above and below an operating supply voltage range

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5354987A (en) * 1976-10-29 1978-05-18 Hitachi Ltd Complementary type mos semiconductor memory
JPS6050066B2 (ja) * 1978-03-27 1985-11-06 超エル・エス・アイ技術研究組合 Ｍｏｓ半導体集積回路装置
JPS5554958U (en。) * 1978-10-09 1980-04-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995011492A1 (fr) * 1993-10-21 1995-04-27 Omron Corporation Systeme d'entree de caracteres capable d'entrer des caracteres de deux manieres et roc utilise a cet effet

Also Published As

Publication number Publication date
JPS57133668A (en) 1982-08-18

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