JPH0147024B2 - - Google Patents
Info
- Publication number
- JPH0147024B2 JPH0147024B2 JP54006355A JP635579A JPH0147024B2 JP H0147024 B2 JPH0147024 B2 JP H0147024B2 JP 54006355 A JP54006355 A JP 54006355A JP 635579 A JP635579 A JP 635579A JP H0147024 B2 JPH0147024 B2 JP H0147024B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- channel
- source
- impurity density
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 20
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
- 230000006698 induction Effects 0.000 claims description 8
- 230000003068 static effect Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 4
- 230000004888 barrier function Effects 0.000 description 9
- 238000009826 distribution Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP635579A JPS5598871A (en) | 1979-01-22 | 1979-01-22 | Static induction transistor |
| US06/369,606 US4470059A (en) | 1979-01-22 | 1982-04-19 | Gallium arsenide static induction transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP635579A JPS5598871A (en) | 1979-01-22 | 1979-01-22 | Static induction transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5598871A JPS5598871A (en) | 1980-07-28 |
| JPH0147024B2 true JPH0147024B2 (US07179912-20070220-C00144.png) | 1989-10-12 |
Family
ID=11636053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP635579A Granted JPS5598871A (en) | 1979-01-22 | 1979-01-22 | Static induction transistor |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4470059A (US07179912-20070220-C00144.png) |
| JP (1) | JPS5598871A (US07179912-20070220-C00144.png) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4546375A (en) * | 1982-06-24 | 1985-10-08 | Rca Corporation | Vertical IGFET with internal gate and method for making same |
| JPS60253269A (ja) * | 1984-05-29 | 1985-12-13 | Meidensha Electric Mfg Co Ltd | ゲ−トタ−ンオフサイリスタ |
| GB2162370B (en) * | 1984-07-26 | 1987-10-28 | Japan Res Dev Corp | Static induction transistor and integrated circuit comprising such a transistor |
| GB2163002B (en) * | 1984-08-08 | 1989-01-05 | Japan Res Dev Corp | Tunnel injection static induction transistor and its integrated circuit |
| JPS61121369A (ja) * | 1984-11-19 | 1986-06-09 | Fujitsu Ltd | 半導体装置 |
| US4774556A (en) * | 1985-07-25 | 1988-09-27 | Nippondenso Co., Ltd. | Non-volatile semiconductor memory device |
| IT1202313B (it) * | 1985-09-26 | 1989-02-02 | Sgs Microelettronica Spa | Dispositivo di potenza a semiconduttore,normaolmente interdetto pe alte tensioni e con ron modulata |
| US4941026A (en) * | 1986-12-05 | 1990-07-10 | General Electric Company | Semiconductor devices exhibiting minimum on-resistance |
| JP2578600B2 (ja) * | 1987-04-28 | 1997-02-05 | オリンパス光学工業株式会社 | 半導体装置 |
| US4835586A (en) * | 1987-09-21 | 1989-05-30 | Siliconix Incorporated | Dual-gate high density fet |
| US4811063A (en) * | 1987-10-20 | 1989-03-07 | General Motors Corporation | JMOS transistor utilizing polysilicon sinks |
| US4963701A (en) * | 1988-01-25 | 1990-10-16 | Kabushiki Kaisha Toshiba | Circuit board |
| JP2538984B2 (ja) * | 1988-04-20 | 1996-10-02 | 株式会社豊田自動織機製作所 | 静電誘導形半導体装置 |
| US5060029A (en) * | 1989-02-28 | 1991-10-22 | Small Power Communication Systems Research Laboratories Co., Ltd. | Step cut type insulated gate SIT having low-resistance electrode and method of manufacturing the same |
| JPH0766971B2 (ja) * | 1989-06-07 | 1995-07-19 | シャープ株式会社 | 炭化珪素半導体装置 |
| US5889298A (en) * | 1993-04-30 | 1999-03-30 | Texas Instruments Incorporated | Vertical JFET field effect transistor |
| US5612547A (en) * | 1993-10-18 | 1997-03-18 | Northrop Grumman Corporation | Silicon carbide static induction transistor |
| US5498997A (en) * | 1994-12-23 | 1996-03-12 | Schiebold; Cristopher F. | Transformerless audio amplifier |
| US5705830A (en) * | 1996-09-05 | 1998-01-06 | Northrop Grumman Corporation | Static induction transistors |
| US5903020A (en) * | 1997-06-18 | 1999-05-11 | Northrop Grumman Corporation | Silicon carbide static induction transistor structure |
| US11049948B2 (en) * | 2018-06-29 | 2021-06-29 | Solsona Enterprise, Llc | Vertical thin film transistor with perforated or comb-gate electrode configuration |
| GB2622086A (en) * | 2022-09-02 | 2024-03-06 | Search For The Next Ltd | A novel transistor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5396681A (en) * | 1977-02-02 | 1978-08-24 | Handotai Kenkyu Shinkokai | Semiconductor ic |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US29971A (en) * | 1860-09-11 | Cotton-cleaner | ||
| JPS53118982A (en) * | 1977-03-28 | 1978-10-17 | Seiko Instr & Electronics Ltd | Electrostatic induction transistor logic element |
| US4284997A (en) * | 1977-07-07 | 1981-08-18 | Zaidan Hojin Handotai Kenkyu Shinkokai | Static induction transistor and its applied devices |
-
1979
- 1979-01-22 JP JP635579A patent/JPS5598871A/ja active Granted
-
1982
- 1982-04-19 US US06/369,606 patent/US4470059A/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5396681A (en) * | 1977-02-02 | 1978-08-24 | Handotai Kenkyu Shinkokai | Semiconductor ic |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5598871A (en) | 1980-07-28 |
| US4470059A (en) | 1984-09-04 |
