JPH0144785B2 - - Google Patents

Info

Publication number
JPH0144785B2
JPH0144785B2 JP55185709A JP18570980A JPH0144785B2 JP H0144785 B2 JPH0144785 B2 JP H0144785B2 JP 55185709 A JP55185709 A JP 55185709A JP 18570980 A JP18570980 A JP 18570980A JP H0144785 B2 JPH0144785 B2 JP H0144785B2
Authority
JP
Japan
Prior art keywords
gas
target
ejection hole
substrate holder
bell gear
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55185709A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57111031A (en
Inventor
Yasuhiko Sato
Takamasa Sakai
Shoichi Minagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Faurecia Clarion Electronics Co Ltd
Original Assignee
Clarion Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clarion Co Ltd filed Critical Clarion Co Ltd
Priority to JP55185709A priority Critical patent/JPS57111031A/ja
Priority to US06/332,996 priority patent/US4412906A/en
Priority to GB8138919A priority patent/GB2092182B/en
Priority to FR8124248A priority patent/FR2497237B1/fr
Publication of JPS57111031A publication Critical patent/JPS57111031A/ja
Publication of JPH0144785B2 publication Critical patent/JPH0144785B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP55185709A 1980-12-27 1980-12-27 Sputtering device Granted JPS57111031A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP55185709A JPS57111031A (en) 1980-12-27 1980-12-27 Sputtering device
US06/332,996 US4412906A (en) 1980-12-27 1981-12-21 Sputtering apparatus
GB8138919A GB2092182B (en) 1980-12-27 1981-12-24 Sputtering apparatus
FR8124248A FR2497237B1 (fr) 1980-12-27 1981-12-24 Appareil de pulverisation " cathodique "

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55185709A JPS57111031A (en) 1980-12-27 1980-12-27 Sputtering device

Publications (2)

Publication Number Publication Date
JPS57111031A JPS57111031A (en) 1982-07-10
JPH0144785B2 true JPH0144785B2 (enExample) 1989-09-29

Family

ID=16175482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55185709A Granted JPS57111031A (en) 1980-12-27 1980-12-27 Sputtering device

Country Status (4)

Country Link
US (1) US4412906A (enExample)
JP (1) JPS57111031A (enExample)
FR (1) FR2497237B1 (enExample)
GB (1) GB2092182B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074626A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd ウエハー処理方法及び装置
DE3530087A1 (de) * 1985-08-22 1987-02-26 Siemens Ag Vorrichtung zum hochleistungs-kathodenzerstaeuben
JPS6326358A (ja) * 1986-07-17 1988-02-03 Tokuda Seisakusho Ltd スパツタ装置
JPH0519330Y2 (enExample) * 1988-02-22 1993-05-21
DE3913716A1 (de) * 1989-04-26 1990-10-31 Fraunhofer Ges Forschung Verfahren und vorrichtung zum beschichten eines substrates in einem plasma
US6068784A (en) * 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
DE4006411C2 (de) * 1990-03-01 1997-05-28 Leybold Ag Vorrichtung zum Aufbringen dünner Schichten auf ein Substrat
US5656138A (en) * 1991-06-18 1997-08-12 The Optical Corporation Of America Very high vacuum magnetron sputtering method and apparatus for precision optical coatings
US5525199A (en) * 1991-11-13 1996-06-11 Optical Corporation Of America Low pressure reactive magnetron sputtering apparatus and method
DE4140862A1 (de) * 1991-12-11 1993-06-17 Leybold Ag Kathodenzerstaeubungsanlage
WO1996007769A1 (en) * 1994-09-03 1996-03-14 Varian Associates, Inc. Apparatus for a thin film manufacturing
US5591313A (en) * 1995-06-30 1997-01-07 Tabco Technologies, Inc. Apparatus and method for localized ion sputtering
US5897711A (en) * 1995-12-22 1999-04-27 Lam Research Corporation Method and apparatus for improving refractive index of dielectric films
US20030159925A1 (en) * 2001-01-29 2003-08-28 Hiroaki Sako Spattering device
JP4493284B2 (ja) * 2003-05-26 2010-06-30 キヤノンアネルバ株式会社 スパッタリング装置
EP1840936A1 (de) * 2006-03-29 2007-10-03 Applied Materials GmbH & Co. KG Sputterkammer zum Beschichten eines Substrats
DE102009021056A1 (de) * 2008-10-30 2010-05-12 BAM Bundesanstalt für Materialforschung und -prüfung Verfahren und Vorrichtung zum Aufbringen oder Einbetten von Partikeln auf oder in eine durch Plasmabeschichtung aufgebrachte Schicht
EP3091561B1 (en) * 2015-05-06 2019-09-04 safematic GmbH Sputter unit
JP7246148B2 (ja) * 2018-06-26 2023-03-27 東京エレクトロン株式会社 スパッタ装置
US11414747B2 (en) * 2018-06-26 2022-08-16 Tokyo Electron Limited Sputtering device
CN113862624B (zh) * 2021-09-27 2023-03-21 上海集成电路材料研究院有限公司 溅射沉积设备及溅射沉积方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1905058C3 (de) * 1969-02-01 1973-10-04 Leybold-Heraeus Gmbh & Co, Kg, 5000 Koeln-Bayental Vorrichtung für die Beschichtung von Werkstücken durch Hochfrequenz-Plasmazerstäubung von Werkstoffen im Vakuum
US4132624A (en) * 1971-02-05 1979-01-02 Triplex Safety Glass Company Limited Apparatus for producing metal oxide films
GB1443827A (en) * 1973-04-27 1976-07-28 Triplex Safety Glass Co Reactive sputtering apparatus and cathode units therefor
US3976555A (en) * 1975-03-20 1976-08-24 Coulter Information Systems, Inc. Method and apparatus for supplying background gas in a sputtering chamber
FR2324755A1 (fr) * 1975-09-19 1977-04-15 Anvar Dispositif de pulverisation cathodique de grande vitesse de depot
AU507748B2 (en) * 1976-06-10 1980-02-28 University Of Sydney, The Reactive sputtering
JPS6015700B2 (ja) * 1977-07-19 1985-04-20 富士通株式会社 スパツタ装置
JPS5531115A (en) * 1978-08-25 1980-03-05 Ulvac Corp Anti-contamination, vacuum plasma film-forming apparatus
US4204942A (en) * 1978-10-11 1980-05-27 Heat Mirror Associates Apparatus for multilayer thin film deposition
JPS55108725A (en) * 1979-02-14 1980-08-21 Fujitsu Ltd Method for manufacture of thin iron oxide film
DD146757A3 (de) * 1979-03-19 1981-03-04 Helmut Dintner Verfahren und vorrichtung zur hochrateherstellung hochreiner verbindungsschichten
DD150480A1 (de) * 1979-04-02 1981-09-02 Ullrich Heisig Verfahren und einrichtung zum reaktiven zerstaeuben

Also Published As

Publication number Publication date
GB2092182B (en) 1984-06-06
US4412906A (en) 1983-11-01
GB2092182A (en) 1982-08-11
FR2497237B1 (fr) 1987-06-26
FR2497237A1 (fr) 1982-07-02
JPS57111031A (en) 1982-07-10

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