GB2092182B - Sputtering apparatus - Google Patents
Sputtering apparatusInfo
- Publication number
- GB2092182B GB2092182B GB8138919A GB8138919A GB2092182B GB 2092182 B GB2092182 B GB 2092182B GB 8138919 A GB8138919 A GB 8138919A GB 8138919 A GB8138919 A GB 8138919A GB 2092182 B GB2092182 B GB 2092182B
- Authority
- GB
- United Kingdom
- Prior art keywords
- sputtering apparatus
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P14/60—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55185709A JPS57111031A (en) | 1980-12-27 | 1980-12-27 | Sputtering device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2092182A GB2092182A (en) | 1982-08-11 |
| GB2092182B true GB2092182B (en) | 1984-06-06 |
Family
ID=16175482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8138919A Expired GB2092182B (en) | 1980-12-27 | 1981-12-24 | Sputtering apparatus |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4412906A (enExample) |
| JP (1) | JPS57111031A (enExample) |
| FR (1) | FR2497237B1 (enExample) |
| GB (1) | GB2092182B (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6074626A (ja) * | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | ウエハー処理方法及び装置 |
| DE3530087A1 (de) * | 1985-08-22 | 1987-02-26 | Siemens Ag | Vorrichtung zum hochleistungs-kathodenzerstaeuben |
| JPS6326358A (ja) * | 1986-07-17 | 1988-02-03 | Tokuda Seisakusho Ltd | スパツタ装置 |
| JPH0519330Y2 (enExample) * | 1988-02-22 | 1993-05-21 | ||
| DE3913716A1 (de) * | 1989-04-26 | 1990-10-31 | Fraunhofer Ges Forschung | Verfahren und vorrichtung zum beschichten eines substrates in einem plasma |
| US5556501A (en) * | 1989-10-03 | 1996-09-17 | Applied Materials, Inc. | Silicon scavenger in an inductively coupled RF plasma reactor |
| US6068784A (en) * | 1989-10-03 | 2000-05-30 | Applied Materials, Inc. | Process used in an RF coupled plasma reactor |
| DE4006411C2 (de) * | 1990-03-01 | 1997-05-28 | Leybold Ag | Vorrichtung zum Aufbringen dünner Schichten auf ein Substrat |
| US5656138A (en) * | 1991-06-18 | 1997-08-12 | The Optical Corporation Of America | Very high vacuum magnetron sputtering method and apparatus for precision optical coatings |
| US5525199A (en) * | 1991-11-13 | 1996-06-11 | Optical Corporation Of America | Low pressure reactive magnetron sputtering apparatus and method |
| DE4140862A1 (de) * | 1991-12-11 | 1993-06-17 | Leybold Ag | Kathodenzerstaeubungsanlage |
| WO1996007769A1 (en) * | 1994-09-03 | 1996-03-14 | Varian Associates, Inc. | Apparatus for a thin film manufacturing |
| US5591313A (en) * | 1995-06-30 | 1997-01-07 | Tabco Technologies, Inc. | Apparatus and method for localized ion sputtering |
| US5897711A (en) * | 1995-12-22 | 1999-04-27 | Lam Research Corporation | Method and apparatus for improving refractive index of dielectric films |
| US20030159925A1 (en) * | 2001-01-29 | 2003-08-28 | Hiroaki Sako | Spattering device |
| JP4493284B2 (ja) * | 2003-05-26 | 2010-06-30 | キヤノンアネルバ株式会社 | スパッタリング装置 |
| EP1840936A1 (de) * | 2006-03-29 | 2007-10-03 | Applied Materials GmbH & Co. KG | Sputterkammer zum Beschichten eines Substrats |
| DE102009021056A1 (de) * | 2008-10-30 | 2010-05-12 | BAM Bundesanstalt für Materialforschung und -prüfung | Verfahren und Vorrichtung zum Aufbringen oder Einbetten von Partikeln auf oder in eine durch Plasmabeschichtung aufgebrachte Schicht |
| EP3091561B1 (en) * | 2015-05-06 | 2019-09-04 | safematic GmbH | Sputter unit |
| JP7246148B2 (ja) * | 2018-06-26 | 2023-03-27 | 東京エレクトロン株式会社 | スパッタ装置 |
| US11414747B2 (en) * | 2018-06-26 | 2022-08-16 | Tokyo Electron Limited | Sputtering device |
| CN113862624B (zh) * | 2021-09-27 | 2023-03-21 | 上海集成电路材料研究院有限公司 | 溅射沉积设备及溅射沉积方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1905058C3 (de) * | 1969-02-01 | 1973-10-04 | Leybold-Heraeus Gmbh & Co, Kg, 5000 Koeln-Bayental | Vorrichtung für die Beschichtung von Werkstücken durch Hochfrequenz-Plasmazerstäubung von Werkstoffen im Vakuum |
| US4132624A (en) * | 1971-02-05 | 1979-01-02 | Triplex Safety Glass Company Limited | Apparatus for producing metal oxide films |
| GB1443827A (en) * | 1973-04-27 | 1976-07-28 | Triplex Safety Glass Co | Reactive sputtering apparatus and cathode units therefor |
| US3976555A (en) * | 1975-03-20 | 1976-08-24 | Coulter Information Systems, Inc. | Method and apparatus for supplying background gas in a sputtering chamber |
| FR2324755A1 (fr) * | 1975-09-19 | 1977-04-15 | Anvar | Dispositif de pulverisation cathodique de grande vitesse de depot |
| AU507748B2 (en) * | 1976-06-10 | 1980-02-28 | University Of Sydney, The | Reactive sputtering |
| JPS6015700B2 (ja) * | 1977-07-19 | 1985-04-20 | 富士通株式会社 | スパツタ装置 |
| JPS5531115A (en) * | 1978-08-25 | 1980-03-05 | Ulvac Corp | Anti-contamination, vacuum plasma film-forming apparatus |
| US4204942A (en) * | 1978-10-11 | 1980-05-27 | Heat Mirror Associates | Apparatus for multilayer thin film deposition |
| JPS55108725A (en) * | 1979-02-14 | 1980-08-21 | Fujitsu Ltd | Method for manufacture of thin iron oxide film |
| DD146757A3 (de) * | 1979-03-19 | 1981-03-04 | Helmut Dintner | Verfahren und vorrichtung zur hochrateherstellung hochreiner verbindungsschichten |
| DD150480A1 (de) * | 1979-04-02 | 1981-09-02 | Ullrich Heisig | Verfahren und einrichtung zum reaktiven zerstaeuben |
-
1980
- 1980-12-27 JP JP55185709A patent/JPS57111031A/ja active Granted
-
1981
- 1981-12-21 US US06/332,996 patent/US4412906A/en not_active Expired - Lifetime
- 1981-12-24 GB GB8138919A patent/GB2092182B/en not_active Expired
- 1981-12-24 FR FR8124248A patent/FR2497237B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57111031A (en) | 1982-07-10 |
| US4412906A (en) | 1983-11-01 |
| JPH0144785B2 (enExample) | 1989-09-29 |
| FR2497237A1 (fr) | 1982-07-02 |
| GB2092182A (en) | 1982-08-11 |
| FR2497237B1 (fr) | 1987-06-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 746 | Register noted 'licences of right' (sect. 46/1977) |
Effective date: 19930318 |
|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19961224 |