JPH0142488B2 - - Google Patents

Info

Publication number
JPH0142488B2
JPH0142488B2 JP22744582A JP22744582A JPH0142488B2 JP H0142488 B2 JPH0142488 B2 JP H0142488B2 JP 22744582 A JP22744582 A JP 22744582A JP 22744582 A JP22744582 A JP 22744582A JP H0142488 B2 JPH0142488 B2 JP H0142488B2
Authority
JP
Japan
Prior art keywords
gas
opening
substrate
quartz
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP22744582A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59121827A (ja
Inventor
Isao Hino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP22744582A priority Critical patent/JPS59121827A/ja
Publication of JPS59121827A publication Critical patent/JPS59121827A/ja
Publication of JPH0142488B2 publication Critical patent/JPH0142488B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP22744582A 1982-12-28 1982-12-28 高周波加熱膜製造装置 Granted JPS59121827A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22744582A JPS59121827A (ja) 1982-12-28 1982-12-28 高周波加熱膜製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22744582A JPS59121827A (ja) 1982-12-28 1982-12-28 高周波加熱膜製造装置

Publications (2)

Publication Number Publication Date
JPS59121827A JPS59121827A (ja) 1984-07-14
JPH0142488B2 true JPH0142488B2 (fr) 1989-09-13

Family

ID=16860976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22744582A Granted JPS59121827A (ja) 1982-12-28 1982-12-28 高周波加熱膜製造装置

Country Status (1)

Country Link
JP (1) JPS59121827A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003087430A1 (fr) * 2002-04-16 2003-10-23 Tokyo Electron Limited Systeme de traitement, procede de traitement et element de montage

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003087430A1 (fr) * 2002-04-16 2003-10-23 Tokyo Electron Limited Systeme de traitement, procede de traitement et element de montage
CN1314834C (zh) * 2002-04-16 2007-05-09 东京毅力科创株式会社 处理装置、处理方法及载置部件

Also Published As

Publication number Publication date
JPS59121827A (ja) 1984-07-14

Similar Documents

Publication Publication Date Title
JPH0142488B2 (fr)
JPH0321516B2 (fr)
JP3757698B2 (ja) 半導体製造装置および半導体製造システム
JPH04202091A (ja) 化合物半導体の気相成長装置
JPS59183826A (ja) 高周波加熱膜製造装置
JP2656029B2 (ja) 結晶成長装置
JPH0323624A (ja) 気相成長方法およびその装置
JPS58223317A (ja) 化合物半導体結晶成長法及びその装置
JP2753009B2 (ja) 化合物半導体の成長方法
JPS62182196A (ja) 気相成長装置
JP2577543B2 (ja) 単結晶薄膜成長装置
JPH0529637B2 (fr)
JP2753832B2 (ja) 第▲ｉｉｉ▼・ｖ族化合物半導体の気相成長法
JPH1145858A (ja) 化合物半導体気相成長装置および方法
JPH0574712A (ja) 有機金属気相成長装置
JPH0529228A (ja) 原子層結晶成長法およびその装置
JPH0657635B2 (ja) 気相成長装置
JPS6153197A (ja) 結晶成長装置
JPH0547671A (ja) 気相成長装置
JPS61155291A (ja) 気相成長方法
JPS6252922A (ja) 気相成長装置
JPH04116819A (ja) 化合物半導体の気相成長装置
JP2006225676A (ja) 気相成長装置
JPH0684803A (ja) 気相エピタキシャル成長装置
JPH053159A (ja) 化合物半導体結晶気相成長装置