JPH0141261B2 - - Google Patents

Info

Publication number
JPH0141261B2
JPH0141261B2 JP56038957A JP3895781A JPH0141261B2 JP H0141261 B2 JPH0141261 B2 JP H0141261B2 JP 56038957 A JP56038957 A JP 56038957A JP 3895781 A JP3895781 A JP 3895781A JP H0141261 B2 JPH0141261 B2 JP H0141261B2
Authority
JP
Japan
Prior art keywords
groove
layer
substrate
flat
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56038957A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57153488A (en
Inventor
Takashi Sugino
Kunio Ito
Masaru Wada
Juichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56038957A priority Critical patent/JPS57153488A/ja
Priority to US06/357,086 priority patent/US4520485A/en
Publication of JPS57153488A publication Critical patent/JPS57153488A/ja
Publication of JPH0141261B2 publication Critical patent/JPH0141261B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP56038957A 1981-03-17 1981-03-17 Semiconductor device Granted JPS57153488A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56038957A JPS57153488A (en) 1981-03-17 1981-03-17 Semiconductor device
US06/357,086 US4520485A (en) 1981-03-17 1982-03-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56038957A JPS57153488A (en) 1981-03-17 1981-03-17 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57153488A JPS57153488A (en) 1982-09-22
JPH0141261B2 true JPH0141261B2 (OSRAM) 1989-09-04

Family

ID=12539659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56038957A Granted JPS57153488A (en) 1981-03-17 1981-03-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57153488A (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3276917D1 (en) * 1982-12-27 1987-09-10 Ibm Light waveguide with a submicron aperture, method for manufacturing the waveguide and application of the waveguide in an optical memory

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2205728C3 (de) * 1972-02-08 1979-01-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Aus einem mehrschichtigen Halbleiterkörper bestehendes optisches Bauelement
JPS55150288A (en) * 1979-05-10 1980-11-22 Sony Corp Semiconductor laser

Also Published As

Publication number Publication date
JPS57153488A (en) 1982-09-22

Similar Documents

Publication Publication Date Title
CA1192977A (en) Constricted double heterostructure semiconductor laser
JPS6318877B2 (OSRAM)
US4835788A (en) Distributed feedback semiconductor laser
JPS621296A (ja) 多端子型半導体レ−ザ素子
JPH0552676B2 (OSRAM)
US4520485A (en) Semiconductor device
JPS5834988A (ja) 半導体レ−ザの製造方法
JPH03227086A (ja) 半導体レーザ素子及びその製造方法
JPS63124484A (ja) 半導体レ−ザ素子
US4691320A (en) Semiconductor structure and devices
JPH046113B2 (OSRAM)
JP4024319B2 (ja) 半導体発光装置
JPS6062177A (ja) 半導体レ−ザ
JPS599990A (ja) 半導体レ−ザの製造方法
JPS5882585A (ja) 半導体レ−ザの製造方法
JPS58178583A (ja) 半導体レ−ザ−
JPS6117157B2 (OSRAM)
JPH0642576B2 (ja) 半導体レ−ザ装置
JPS59222984A (ja) 半導体レ−ザ装置
JPS6136719B2 (OSRAM)
JPH05315701A (ja) 光半導体装置
JPS6316692A (ja) 分布帰還形半導体レ−ザ
JPS6221286A (ja) 半導体レ−ザ
JPS6354234B2 (OSRAM)
JPS58197726A (ja) 半導体装置