JPH0141246B2 - - Google Patents
Info
- Publication number
- JPH0141246B2 JPH0141246B2 JP58076429A JP7642983A JPH0141246B2 JP H0141246 B2 JPH0141246 B2 JP H0141246B2 JP 58076429 A JP58076429 A JP 58076429A JP 7642983 A JP7642983 A JP 7642983A JP H0141246 B2 JPH0141246 B2 JP H0141246B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- dimension
- exposure time
- measuring means
- dev
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58076429A JPS59201418A (ja) | 1983-04-30 | 1983-04-30 | 露光装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58076429A JPS59201418A (ja) | 1983-04-30 | 1983-04-30 | 露光装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59201418A JPS59201418A (ja) | 1984-11-15 |
| JPH0141246B2 true JPH0141246B2 (enrdf_load_stackoverflow) | 1989-09-04 |
Family
ID=13604917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58076429A Granted JPS59201418A (ja) | 1983-04-30 | 1983-04-30 | 露光装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59201418A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03246920A (ja) * | 1990-02-26 | 1991-11-05 | Fujitsu Ltd | 半導体装置の製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5277725A (en) * | 1975-12-24 | 1977-06-30 | Hitachi Ltd | Automatic exposure circuit |
| JPS5453864A (en) * | 1977-10-05 | 1979-04-27 | Sanyo Electric Co Ltd | Monitoring method of line widths |
| JPS57118639A (en) * | 1981-01-16 | 1982-07-23 | Toshiba Corp | Process control of semiconductor photo-etching |
-
1983
- 1983-04-30 JP JP58076429A patent/JPS59201418A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59201418A (ja) | 1984-11-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2919004B2 (ja) | パターン形成方法 | |
| US20030054642A1 (en) | Production method of semiconductor device and production system of semiconductor device | |
| US4738910A (en) | Method of applying a resist | |
| JPH10254122A (ja) | 露光用フォトマスク | |
| JPS59178729A (ja) | フォトレジストプロセスにおける露光方法 | |
| JPH0141246B2 (enrdf_load_stackoverflow) | ||
| JPS60177623A (ja) | 露光装置 | |
| JPH10326006A (ja) | パターンの形成方法 | |
| JP2797362B2 (ja) | 半導体装置のパターン形成方法 | |
| JPH03144453A (ja) | 露光用マスク及び半導体装置の製造方法 | |
| JPH05257264A (ja) | 露光用マスク及びその製造方法 | |
| JPH0431858A (ja) | マスクの製作方法 | |
| JP2693805B2 (ja) | レチクル及びこれを用いたパターン形成方法 | |
| CN115793413B (zh) | 基于对位差与双重光刻的超分辨率图案实现方法及装置 | |
| JP3837846B2 (ja) | 半導体装置の製造方法 | |
| JPS5931852B2 (ja) | フォトレジスト露光用マスク | |
| JPS623941B2 (enrdf_load_stackoverflow) | ||
| JPH0470755A (ja) | パターン形成方法 | |
| KR100209366B1 (ko) | 반도체 소자의 미세패턴 제조방법 | |
| JP2666420B2 (ja) | 半導体装置の製造方法 | |
| Arthur et al. | Full-chip optical proximity correction using lithography simulation | |
| JPS6219049B2 (enrdf_load_stackoverflow) | ||
| KR20050115004A (ko) | 마스크 제조방법 | |
| JPH07209850A (ja) | レジストパターン形成方法 | |
| KR960000184B1 (ko) | 자동 배치형 위상반전마스크 제조 방법 |