JPH0141016B2 - - Google Patents

Info

Publication number
JPH0141016B2
JPH0141016B2 JP57119309A JP11930982A JPH0141016B2 JP H0141016 B2 JPH0141016 B2 JP H0141016B2 JP 57119309 A JP57119309 A JP 57119309A JP 11930982 A JP11930982 A JP 11930982A JP H0141016 B2 JPH0141016 B2 JP H0141016B2
Authority
JP
Japan
Prior art keywords
pattern
forming
photoresist pattern
spacer layer
platinum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57119309A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5910227A (ja
Inventor
Tadahiro Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP11930982A priority Critical patent/JPS5910227A/ja
Publication of JPS5910227A publication Critical patent/JPS5910227A/ja
Publication of JPH0141016B2 publication Critical patent/JPH0141016B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
JP11930982A 1982-07-09 1982-07-09 半導体装置の製造方法 Granted JPS5910227A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11930982A JPS5910227A (ja) 1982-07-09 1982-07-09 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11930982A JPS5910227A (ja) 1982-07-09 1982-07-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5910227A JPS5910227A (ja) 1984-01-19
JPH0141016B2 true JPH0141016B2 (en, 2012) 1989-09-01

Family

ID=14758235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11930982A Granted JPS5910227A (ja) 1982-07-09 1982-07-09 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5910227A (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60236661A (ja) * 1984-05-10 1985-11-25 株式会社クラレ 人工腎臓透析装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713740A (en) * 1980-06-30 1982-01-23 Fujitsu Ltd Forming method for conductor pattern

Also Published As

Publication number Publication date
JPS5910227A (ja) 1984-01-19

Similar Documents

Publication Publication Date Title
US5242861A (en) Method for manufacturing semiconductor device having a multilayer wiring structure
US4430365A (en) Method for forming conductive lines and vias
JPS6359541A (ja) インクジェット・プリントヘッド
JPS5828736B2 (ja) 平坦な薄膜の形成方法
JPS6161280B2 (en, 2012)
JPH0141016B2 (en, 2012)
US6808641B2 (en) Method of wiring formation and method for manufacturing electronic components
JP3126862B2 (ja) 金属パターンの形成方法
JPS5950095B2 (ja) 半導体装置の製造方法
JPH0377327A (ja) バンプ電極形半導体装置およびその製造方法
JPS5816545A (ja) 半導体装置の製造方法
JP2825050B2 (ja) 多層配線基板
JPH05243217A (ja) 半導体装置の製造方法
KR100192553B1 (ko) 다층배선 형성방법
JPH04307737A (ja) 半導体装置の製造方法
JPS63293861A (ja) 半導体装置の製造方法
KR100255156B1 (ko) 반도체 소자의 금속배선 형성방법
JPH06177255A (ja) 半導体集積回路装置の製造方法
JPH0715909B2 (ja) 半導体装置の製造方法
JPS6262469B2 (en, 2012)
JPS628030B2 (en, 2012)
JPH0532915B2 (en, 2012)
JPS58192351A (ja) 半導体装置の製造方法
JPS58210168A (ja) 二層膜のエツチング方法
JPS58110055A (ja) 半導体装置