JPH0140193Y2 - - Google Patents

Description

[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to an improvement in an apparatus for performing etching or development on one side of a semiconductor wafer such as a silicon wafer or a glass photomask.

(Prior Art) Conventionally, a single-sided tank consists of a cup-shaped tank with a passageway for introducing a processing liquid at the bottom, and a chuck that is placed close to the top of the tank and supports a semiconductor wafer with the side to be processed facing downward. In processing equipment, for example, when etching a thin metal film or oxide film on one side of a wafer in order to form a specific pattern as a semiconductor device, the etching solution is blown upward through a passage at the bottom of the tank and into the chuck. The wafer was etched by contact with the etching solution which flowed out from around the bath against the underside of the supported wafer and was thus blown up. A plurality of devices of this kind, for example 25 in 5 rows and 5 columns, are housed in a common container and handled simultaneously.

(Problem that the invention aims to solve) A valve is installed on the common pipe that sends the liquid to each tank in the container, and the flow rate is adjusted there, but the flow rate of the liquid sent to each tank in the container is Variations occur depending on the location; if the flow rate of the liquid in the bath is too high, the central area of the wafer will be etched more strongly than the surrounding area, and if the flow rate is too low, the peripheral area will be etched more strongly than the central area, resulting in uniform processing. There were disadvantages that I could not get.

The purpose of the present invention is to solve the above-mentioned problems of the prior art. Therefore, in an apparatus in which a plurality of processing apparatuses are arranged side by side to process a plurality of semiconductor wafers at the same time, uniform processing is performed on the surface of each wafer. An object of the present invention is to provide a single-sided processing device for semiconductor wafers that can be rubbed.

(Means for Solving the Problems) The wafer single-sided processing apparatus according to the present invention includes a cup-shaped tank having a passage 11 for introducing a processing liquid at the bottom, and a cup-shaped tank provided close to the top of the tank and having a wafer to be processed. A pair of discs 14 and 15 with cavities that are rotatable with respect to each other are installed at the top of the channel 11 of the tank, and include a chuck for supporting a wafer with one side facing downward, and alignment between the cavities of the discs is provided. The solution was to adjust the flow rate of the liquid depending on the temperature.

(Function) A plurality of these processing devices are used in parallel,
The valves on the common pipes are set in advance so that a certain amount of liquid flows into each tank. In each juxtaposed processing device, a disk 14,1 provided at the top of the passage 11
5, the liquid is throttled and the flow rate is adjusted for each tank. At this time, if the flow rate of the processing liquid is considerably large, the degree of matching between the cavities 14a and 15a of the pair of disks is weakened, and therefore the restriction is strengthened to adjust the flow rate to the optimum flow rate. Moreover, when the flow rate is not very large, the degree of matching is increased and the throttling of the liquid is weakened.

(Example) Next, an example of the present invention will be described with reference to the drawings. FIG. 1 shows the entire processing apparatus to which the present invention relates, and this apparatus basically consists of a generally cup-shaped tank 10 and a chuck 20 disposed close to the top of the tank 10. . The chuck 20 supports the semiconductor wafer A by vacuum suction on its lower surface, and is preferably configured to be rotatable and rotated by a suitable drive device.

A passage 11 for introducing a processing liquid, such as an etching liquid, is formed at the bottom of the tank 10.
1 is connected to a common pipe 12 for delivering the etching solution. The top 13 of the tank 10 is circular, and its cross section is a smooth upwardly convex curve, for example, an arcuate surface. Although omitted in the figure,
At the top of the tank 10 there are pins etc. that temporarily support the wafer horizontally until the wafer is sucked into the chuck 20. Although tank 10 is generally made of acid-resistant resin, chuck 20 is preferably made of a transparent material such as clear vinyl chloride.

The feature of this wafer processing apparatus is that, as shown in the figure, a pair of mutually overlapping discs 14 and 15 with cavities are installed in the enlarged area at the top of the passage 11 of the tank 10. The pair of disks are rotatable relative to each other. In a preferred form, the first
As seen in the figure, these disks 14 and 15 are connected in an overlapping state by a pin 16 passing through the center. Further, the plurality of spaces 14a and 15a of each disc can have any shape,
As shown in FIG.
It is preferable that the particles be distributed in the same way in 4 and 15, and that they be equally distributed in the same shape.

It should be noted that the lower one of these discs 14 is preferably fitted into a step 17 at the top of the passage 11, and the lower disc 14 is fixed to such a step and the upper circle The plate 15 is rotatable on the lower disk 14, and as shown in FIG. 3, the liquid passing through it is throttled depending on the degree of alignment between the cavities of each disk, that is, the degree of overlap. , the flow rate of the liquid is adjusted. These disks 1
4 and 15 are preferably made of the same material as the tank 10. In addition, in the example of FIG. 2 and FIG. 3, each cavity 14a, 15a is a hole, but it does not necessarily need to be a hole.

Next, to explain the operation, when the chuck 20 supports the wafer close to the top of the tank 10 with the surface to be processed on which the photoresist is applied to the metal thin film on one side of the semiconductor wafer facing downward, the etching solution flows into the tube. 12 into the passage 11 of the tank 10, and ascends there to enter the spaces 14a, 1 of the pair of discs 14, 15.
The liquid blows up through the tank 5a, hits the surface of the wafer supported by the chuck 20, and flows out over the top of the tank 10. The processing surface of the wafer is etched by this blowing up of the etching solution, but if the flow rate of the solution is quite large, the central part of the wafer is etched much more strongly than the periphery of the wafer.
4 and 15 to weaken the degree of alignment between the cavities 14a and 15a, thereby reducing the gap 19 (FIG. 3) and strengthening the aperture to reduce the flow rate, which is optimal for uniformly processing wafers. Adjust to flow rate. Further, for the tank 10 where the flow rate is not so large, the flow rate is adjusted by increasing the degree of matching between the spaces of the pair of disks and weakening the restriction on the flow of liquid.

Note that in this type of device, rotational directionality tends to occur in the liquid blown up through the channel 11 of the tank, but in such a case, as shown in FIG. Preferably, a child 18 is provided, which makes it possible to add vibrations to the liquid, weakening the directionality of rotation and promoting longitudinal reactions. Such a vibrator may be installed at other locations, such as at the entrance of the passageway 11, for example.

Although the above example shows the case of etching parts of a metal thin film other than the parts on which photoresist has been applied, this equipment can also be used to process other wafers, for example, the surface of a semiconductor wafer. It can also be used for development to form photoresist patterns. Further, as shown in FIG. 5, the spaces 14a and 15a may be notches, and in this case, the gap 19 is similarly adjusted depending on the degree of alignment between the notches.

(Effect of the invention) As described above, according to the invention, when a plurality of tanks are arranged side by side in a common container, the processing liquid is blown up inside the tank by a pair of discs with cavities in each tank. Therefore, the flow rate can be adjusted to the optimum flow rate for each tank. Therefore, the surfaces of each wafer set in a plurality of juxtaposed baths can be processed uniformly, that is, with no difference between the central area and the surrounding area, and in the case of etching, localized etching can be performed. It is possible to prevent side cuts and undercuts from occurring.

[Brief explanation of the drawing]

Fig. 1 is a vertical cross-sectional view of a single-sided processing device for semiconductor wafers according to an example of the present invention, Fig. 2 is an exploded plan view of a pair of disks included in the device, and Fig. 3 is an exploded plan view of a pair of disks stacked on top of each other. FIG. 4 is a longitudinal sectional view showing another embodiment, and FIG. 5 is a plan view similar to FIG. 3 showing another embodiment. In the figure, 10... tank, 11... passage, 12...
Tube, 14, 15... Disc, 14a, 15a... Hollow space in disc, 16... Pin, 20... Chic.

Claims (1)

[Claims for Utility Model Registration] (1) A cup-shaped tank with a passage for introducing a processing liquid at the bottom, and a semiconductor wafer placed close to the top of the tank and with one side to be processed facing downward. In a processing device including a chuck supporting
A pair of discs that can rotate relative to each other are installed at the top of the passage, and each disc has a plurality of cavities distributed in the same manner, and the discs are arranged so that they can rotate relative to each other. 1. An apparatus for single-side processing of a semiconductor wafer, characterized in that the flow rate of a processing liquid that passes through the space and is blown up toward the lower surface of the semiconductor wafer is adjusted depending on the degree of alignment of the space. (2) Utility Model Registration The device according to claim 1, wherein each of the spaces in the pair of discs is formed in the same shape. (3) Utility Model Registration The device according to claim 1, wherein the pair of disks are connected to each other by a pin provided in the center. (4) Utility Model Registration The apparatus according to claim 1, wherein each of the voids is a hole, and the single-side processing apparatus for semiconductor wafers. (5) Utility Model Registration The apparatus according to claim 1, wherein each of the spaces is a notch, and the single-side processing apparatus for semiconductor wafers.