JP3917493B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate. Substrates to be processed include semiconductor wafers, glass substrates for liquid crystal display devices, glass substrates for plasma displays, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, and the like.
[0002]
[Prior art]
In the manufacturing process of a semiconductor device, a metal thin film such as a copper thin film is formed on a device forming surface of a semiconductor wafer (hereinafter simply referred to as “wafer”), and then an unnecessary portion of the metal thin film is etched away. May be. For example, if a metal thin film is formed on the peripheral edge of a wafer, the metal contamination of the hand may occur during handling by the transfer robot, and this metal contamination may be transferred to another wafer, resulting in a problem that is difficult to overlook. Therefore, an unnecessary metal thin film formed on the peripheral edge of the wafer is removed.
[0003]
The prior art for removing the metal thin film formed on the peripheral edge portion of the wafer is disclosed in, for example, the following Patent Document 1 relating to the prior application of the applicant of the present application. In this prior art apparatus, the wafer is rotated while being held almost horizontally, and a shielding plate is arranged opposite to the upper surface (device forming surface) of the wafer, and the shielding plate is rotated. While rotating around the axis, an etching solution is supplied to the upper surface of the shielding plate, and the etching solution is scattered obliquely downward from the periphery of the shielding plate by centrifugal force due to the rotation of the shielding plate, thereby causing a peripheral portion of the upper surface of the wafer. An etching solution is supplied to the substrate. Then, the etching solution supplied to the peripheral portion of the upper surface of the wafer flows toward the peripheral edge of the wafer by centrifugal force due to the rotation of the wafer, and flows down from the peripheral edge of the wafer along the peripheral surface (end surface) of the wafer. Thereby, the unnecessary metal thin film formed on the peripheral portion and the peripheral surface of the upper surface of the wafer is removed.
[0004]
In another prior art apparatus, the wafer is held substantially horizontally and rotated, and a shielding plate is disposed opposite to the upper surface of the wafer, and the shielding plate is arranged around the rotation axis of the wafer. The wafer is rotated at the same rotational speed as the wafer, while an etching solution is supplied to the lower surface of the wafer, and the etching solution wraps around the upper surface of the wafer to form a peripheral portion and a peripheral surface of the upper surface of the wafer. A configuration for removing an unnecessary metal thin film is employed. In order to prevent the etching solution from entering the central portion of the upper surface of the wafer, nitrogen gas is supplied to the space between the wafer and the shielding plate from a nozzle disposed in the central portion of the lower surface of the shielding plate. .
[0005]
[Patent Document 1]
JP 2002-75953 A
[Problems to be solved by the invention]
However, each prior art apparatus has a problem that it is difficult to precisely control the width (etching width) of the region where the metal thin film on the upper surface of the wafer is removed. That is, in the configuration in which the etching solution is scattered from the upper surface of the shielding plate by centrifugal force, it is difficult to make the supply position of the etching solution on the upper surface of the wafer constant, and the width of the region where the metal thin film on the upper surface of the wafer is removed. There is a risk of variation. Further, in the configuration using the wraparound of the etching solution from the lower surface to the upper surface of the wafer, for example, if there is a difference between the rotation speed of the wafer and the rotation speed of the shielding plate, the airflow between the wafer and the shielding plate is disturbed. There is a possibility that the amount of etching solution flowing into the upper surface of the wafer may vary.
[0007]
Further, in each of the above prior arts, the shape of the region (processing target region) to be processed with the processing liquid on the upper surface of the wafer is limited to an annular shape, and the processing with the processing liquid cannot be performed on other shapes. .
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of precisely controlling the width or shape of the region on the upper surface of the substrate where the processing with the processing liquid is performed.
[0008]
Another object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of performing processing with a processing liquid on a processing target area of an arbitrary shape on the upper surface of a substrate.
[0009]
[Means for Solving the Problems and Effects of the Invention]
The invention described in claim 1 for achieving the above object is a substrate processing apparatus for performing processing using a processing liquid on a peripheral portion of a substrate (W), and holds the substrate substantially horizontally. Te, a substrate holding means (1) for rotating the substrate around a substantially vertical axis of rotation, the hydrophobic substrate surface facing the upper surface of the substrate held by the substrate holding means (21), toward the lower side And the hydrophilic upper surface (23) inclined so as to approach the edge of the substrate facing surface, and the hydrophilic side surface extending in the vertical direction connecting the edge of the substrate facing surface and the edge of the upper surface ( 22) have a supply, the substrate-facing surface in close proximity to the upper surface of the substrate, an opposing member (2) for protecting the central portion of the upper surface of the substrate, the treatment liquid on the upper surface of the opposing member And a processing liquid supply means (3) It is a management apparatus.
[0010]
In addition, the alphanumeric characters in parentheses represent corresponding components in the embodiments described later. The same applies hereinafter.
According to the above configuration, since the upper surface of the facing member is a hydrophilic surface and the substrate facing surface is a hydrophobic surface, the processing liquid flowing down from the facing member does not splash outward from the upper surface of the facing member. After successfully flowing down along the upper surface of the opposing member, it flows down vertically from the edge of the opposing surface of the opposing member toward the substrate facing surface of the opposing member without falling down, It is supplied to a certain position on the peripheral edge. In addition, since the side surface of the facing member extends in the vertical direction, a vertical downward velocity vector can be given to the processing liquid flowing down toward the edge of the substrate facing surface along the side surface, and the processing liquid is guided. Thus, it can be supplied with high accuracy at a certain position (on the boundary line) on the upper surface of the substrate. Therefore, there is no variation in the width of the region where the processing with the processing liquid on the upper surface of the substrate is performed, and the width of the region where the processing is performed can be precisely controlled as compared with the conventional apparatus.
[0011]
In addition, since the central portion (for example, device formation region) of the substrate, which is a non-processing target region, is protected by the facing member, it is possible to prevent undesired processing from being performed on the central portion of the upper surface of the substrate.
According to a second aspect of the present invention, the opposing member may be formed in a rotating body shape having a central axis that is substantially along the rotational axis.
A third aspect of the present invention is a substrate processing apparatus for performing processing using a processing liquid on a processing target area including at least a part of a peripheral portion of a substrate (W), and holds the substrate. The substrate holding means (1) and the boundary that opposes the upper surface of the substrate held by the substrate holding means and separates the processing target areas (A1, A2, A3) set on the upper surface of the substrate from the non-processing target areas hydrophobic substrate facing surface having an edge corresponding to the line (21), the hydrophilic inclined so as to approach the edge of the substrate opposing surface toward the lower side upper surface (23), and the substrate-facing surface An edge is connected to the edge of the upper surface, and has a hydrophilic side surface (22) extending in the vertical direction . The substrate facing surface is brought close to the upper surface of the substrate, and the non-surface of the upper surface of the substrate is Opposing members (2, 5, 6) for protecting the processing target area, and this A substrate processing apparatus which comprises a processing liquid supplying means for supplying a processing liquid to the upper surface of the counter-member (3).
[0012]
According to this configuration, since the upper surface of the facing member is a hydrophilic surface and the substrate facing surface is a hydrophobic surface, the processing liquid flowing down from the facing member does not scatter outward from the upper surface of the facing member. After flowing down well along the upper surface of the member, it flows down from the edge of the substrate facing surface of the facing member vertically downward without falling around the substrate facing surface of the facing member, and processing the upper surface of the substrate Supplied to the target area. Therefore, it is possible to perform processing with a processing liquid on a processing target area having an arbitrary shape, and there is no possibility of variations in the width and shape of the processing target area.
[0013]
In addition, since the non-processing target area on the upper surface of the substrate is protected by the facing member, there is no possibility that undesired processing is performed on the non-processing target area on the upper surface of the substrate.
In the third aspect of the present invention, if the substrate is further rotated about the axis orthogonal to the substrate by the substrate holding means, the region to be processed can be an annular region at the peripheral edge of the substrate.
The hydrophilic side of the opposing member, vertical since the direction in which extends, it is possible to impart vertical downward velocity vector processing solution flowing down towards the edge of the substrate opposing surface along the side surface, The processing liquid can be guided and supplied with high accuracy at a certain position (on the boundary line) on the upper surface of the substrate.
[0014]
According to a fourth aspect of the present invention, the substrate processing apparatus includes an inert gas supply means (24) for supplying an inert gas between the upper surface of the substrate held by the substrate holding means and the substrate facing surface. , 25). By supplying an inert gas between the upper surface of the substrate and the substrate facing surface of the facing member, it is possible to more reliably prevent undesired processing from being performed on the central portion of the substrate upper surface and the non-processing target area. .
The invention according to claim 5 is a method for performing processing using a processing liquid on the peripheral portion of the substrate (W), and the substrate is held in a substantially horizontal posture by the substrate holding means (1). a substrate holding step of rotating about the rotation axis is inclined so as to approach the edge of the substrate opposing surface as the substrate-facing surface of the hydrophobic facing the upper surface of the substrate held by the substrate holding means, towards the lower side A substrate having a hydrophilic upper surface and an opposing member (2) having a hydrophilic side surface that connects the edge of the substrate facing surface and the edge of the upper surface and extends in the vertical direction held by the substrate holding means A counter member approaching step of bringing the processing liquid close to the upper surface of the substrate, supplying a processing liquid to the upper surface of the counter member, and holding the processing liquid along the side surface from the edge of the substrate facing surface to the substrate holding means. Treatment liquid to flow down to the peripheral edge of the substrate A substrate processing method which comprises a step.
[0015]
According to this method, an effect similar to the effect described in relation to claim 1 can be obtained.
The invention described in claim 6 is a method for performing processing using a processing liquid on the processing target area of the substrate (W), and the substrate holding means (1) holds the substrate substantially horizontally. An end corresponding to a boundary line that divides a process target area (A1, A2, A3) and a non-process target area set on the upper surface of the substrate, facing the upper surface of the substrate held by the substrate holding means connection board facing surface of the hydrophobic, inclined hydrophilic top so as to approach the edge of the substrate opposing surface toward the lower side, and the edge of the edge and the upper surface of the substrate facing surface having an edge Then, a facing member approaching step for bringing the facing member (2, 5, 6) having a hydrophilic side surface extending in the vertical direction close to the upper surface of the substrate held by the substrate holding means, and processing on the upper surface of the facing member liquid supplies, Tsutawa the side of the processing liquid Te is a substrate processing method characterized in that it comprises a treatment liquid supplying step to flow down into the processed region of the substrate held by the substrate holding means from the edge of the substrate facing surface.
[0016]
According to this method, an effect similar to the effect described in relation to claim 3 can be obtained.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a diagram schematically showing the configuration of a substrate peripheral edge processing apparatus according to an embodiment of the present invention. In this substrate peripheral processing apparatus, a metal thin film (for example, a copper thin film) C is formed on a device forming surface and a peripheral surface of a wafer W which is an example of a substrate, and then formed on a peripheral portion and a peripheral surface of the device forming surface. An apparatus for performing a process for removing unnecessary metal thin films, and a spin chuck 1 that rotates while holding the wafer W substantially horizontally, and an upper surface of the wafer W held by the spin chuck 1. The blocking member 2 to be arranged and the nozzle 3 for supplying an etching solution to the upper surface 23 of the blocking member 2 are provided.
[0018]
The spin chuck 1 has, for example, a spin shaft 11 arranged substantially vertically and an adsorption base 12 fixed to the upper end of the spin shaft 11, and the wafer W has a device formation surface on the adsorption base 12. In a state where the wafer W is placed upward, the suction path formed in the suction base 12 is evacuated to vacuum-suck the non-device forming surface (lower surface) of the wafer W, so that the wafer W is in a substantially horizontal posture. It can be held in In addition, a rotation drive mechanism 13 including a motor or the like is coupled to the spin shaft 11, and a rotational force is input from the rotation drive mechanism 13 to the spin shaft 11 while the wafer W is sucked and held on the suction base 12. Thus, the wafer W can be rotated around a vertical axis (a central axis of the spin axis 11) passing through the substantial center thereof.
[0019]
The blocking member 2 has a lower part 2A formed in a disk shape having a slightly smaller diameter than the wafer W, and an upper part 2B formed in a conical shape with one surface of the lower part 2A as a bottom surface. The other surface 21 is provided so as to be substantially parallel to the upper surface of the wafer W held by the spin chuck 1. In other words, the blocking member 2 has a circular lower surface 21 that is slightly smaller than the outer shape of the wafer W, a side surface 22 that rises substantially perpendicularly from the periphery of the lower surface 21, and a lower surface 21 that extends upward from the upper edge of the side surface 22. And a conical upper surface 23 that is inclined so as to approach an axis passing through the center of the lower surface 21, and is formed into a rotating body having an axis passing through the center of the lower surface 21 as a central axis. Further, the blocking member 2 is provided such that the central axis thereof coincides with the central axis of the spin axis 11.
[0020]
Inside the blocking member 2, a nitrogen gas supply path 24 is formed along the central axis of the blocking member 2. Nitrogen gas (N ₂ ) is supplied to the nitrogen gas supply path 24 from a nitrogen gas supply source (not shown). The nitrogen gas supply path 24 communicates with an opening 25 formed at the center of the lower surface 21 of the blocking member 2, and the nitrogen gas supplied to the nitrogen gas supply path 24 passes through the opening 25 from the spin chuck 1. Are discharged toward the center of the upper surface of the wafer W held on the substrate.
[0021]
In the lower part 2A of the blocking member 2, for example, a hydrophobic member 26 having a trapezoidal cross section is embedded from below, and the lower surface of the hydrophobic member 26 forms the lower surface 21 of the blocking member 2. ing. The hydrophobic member 26 is not exposed on the side surface 22 of the blocking member 2. The surface (at least the lower surface) of the hydrophobic member 26 is coated with a fluororesin, whereby the lower surface 21 of the blocking member 2 is a hydrophobic surface having hydrophobicity. On the other hand, the side surface 22 and the upper surface 23 of the blocking member 2 are hydrophilic surfaces having a hydrophilic property by sandblasting to roughen the surface roughness.
[0022]
Here, the lower surface 21 serving as a hydrophobic surface has a contact angle between the surface 21 and a pure water droplet (when a pure water droplet adheres, the surface on which the droplet adheres and the surface of the droplet are separated from each other). The side surface 22 and the upper surface 23 as hydrophilic surfaces are set such that the contact angle between the surface and the pure water droplet is 10 degrees or less. Yes.
Before starting the processing for the wafer W, the blocking member 2 is largely retracted upward so as not to hinder the loading of the wafer W. Then, when the wafer W is carried in by a transfer robot (not shown) and delivered to the spin chuck 1, the blocking member 2 is lowered to a position where the lower surface 21 is close to the upper surface of the wafer W with a certain interval. The
[0023]
Subsequently, the spin chuck 1 (that is, the wafer W) is rotated at a predetermined rotation speed, and nitrogen gas is supplied from the opening 25 on the lower surface of the blocking member 2 toward the upper surface of the rotating wafer W. By supplying the nitrogen gas, the space between the wafer W and the blocking member 2 is filled with the nitrogen gas, so that the atmosphere containing the etching solution and the etching solution can be prevented from entering the space from the outside. It can prevent that the metal thin film C currently formed in the center part (device formation area) of the upper surface receives the etching process which is not desired.
[0024]
Further, an etching solution is supplied from the nozzle 3 to the upper surface 23 of the blocking member 2. The nozzle 3 is disposed on the central axis of the blocking member 2, and the etching solution from the nozzle 3 is near the top of the upper surface 23 of the blocking member 2 (a conical region centered on the central axis of the blocking member 2). Supplied evenly.
Since the upper surface 23 and the side surface 22 of the blocking member 2 are hydrophilic surfaces, the etching solution supplied to the upper surface 23 of the blocking member 2 flows down along the upper surface 23 and further flows down along the side surface 22. Then, since the lower surface 21 of the blocking member 2 is a hydrophobic surface, the etching solution that has reached the lower end edge of the side surface 22 does not wrap around the lower surface 21 and is continuously vertically downward from the entire circumference of the lower end edge of the side surface 22. Flow down. Thereby, the etching liquid flowing down from the blocking member 2 forms a liquid wall having a cylindrical surface 4 in contact with the side surface 22 of the blocking member 2, as shown in FIG. 4 is supplied to the area A1 (etching target area) outside the line of intersection with the line 4. Then, the etching solution supplied to the upper surface of the wafer W receives centrifugal force due to the rotation of the wafer W, flows toward the periphery of the wafer W, and travels from the periphery of the wafer W to the peripheral surface (end surface) of the wafer W. As a result, the unnecessary metal thin film formed in the region A1 on the upper surface of the wafer W and the entire peripheral surface is removed.
[0025]
As described above, according to this embodiment, the etching solution to be supplied to the peripheral edge portion of the upper surface of the wafer W is supplied from the nozzle 3 to the upper surface 23 of the blocking member 2, and the upper surface 23 and the side surface 22 of the blocking member 2 are applied. The liquid flows and flows down toward the peripheral edge of the upper surface of the wafer W while forming a liquid wall having the cylindrical surface 4 along the side surface 22 of the blocking member 2. Since the upper surface 23 and the side surface 22 of the blocking member 2 are hydrophilic surfaces and the lower surface 21 is a hydrophobic surface, the etchant scatters outward from the upper surface 23 or the side surface 22 of the blocking member 2 or the etching solution is blocked. 2, the cylindrical surface 4 of the liquid wall formed by the etching solution is formed on the wafer W without falling into the region B1 (non-etching target region) where the metal thin film C should be left around. It intersects the upper surface on a certain line. Therefore, there is no variation in the width (etching width) of the region A1 where the metal thin film C on the upper surface of the wafer W is to be removed, and the etching width can be controlled more precisely than in the conventional apparatus. Furthermore, it is possible to prevent the etchant from entering the region B1 where the metal thin film C is to remain.
[0026]
In this embodiment, while the etching solution is supplied to the wafer W, the blocking member 2 is kept stationary. However, a rotation drive mechanism is provided in association with the blocking member 2, and the rotation drive mechanism, for example, The blocking member 2 may be rotated about the central axis of the blocking member 2, that is, around the same axis as the rotation axis of the wafer W. By rotating the blocking member 2, the amount of the etchant flowing down can be made substantially uniform over the entire periphery of the lower end edge of the blocking member 2. Even when the blocking member 2 is rotated, the upper surface 23 and the side surface 22 of the blocking member 2 are hydrophilic and the lower surface 21 is hydrophobic. Then, the liquid wall having the cylindrical surface 4 along the side surface 22 is formed and flows down toward the peripheral edge of the upper surface of the wafer W.
[0027]
In addition, while the etching solution is supplied to the wafer W, the wafer W is rotated, but the processing may be performed with the wafer W still. Even in this case, if the gas (nitrogen gas) is supplied from the opening 25 at the center of the lower surface 21, the supplied etching solution can be prevented from entering the center of the wafer W.
Further, the blocking member 2 has a circular lower surface 21 that is slightly smaller than the outer shape of the wafer W. This is because the metal thin film on the upper surface of the wafer W is to be left as a region (etching non-target). Area) B1 is set as a circular area at the center of the wafer W, and an area (etching area) A1 from which the metal thin film is to be removed is set as an annular area surrounding the non-etching area. Yes, the blocking member 2 only needs to have a shape corresponding to the boundary line dividing the etching target area and the non-etching target area at the lower end edge.
[0028]
When processing is performed with the wafer W held stationary on the spin chuck 1 and the blocking member stationary, for example, a metal thin film formed on the upper surface of the wafer W as shown in FIG. Is set as a boundary line that separates the etching target area A2 and the non-etching target area B2 so that the peripheral area is etched away from the annular area of the peripheral portion and the area where the hand H of the transfer robot contacts (etching target area A2). Then, the lower surface (lower end edge) of the blocking member 5 may be formed in a shape corresponding to the set boundary line. Even in this case, the lower surface of the blocking member 5 is a hydrophobic surface, and the upper surface and side surfaces of the blocking member 5 are hydrophilic. Further, in order to prevent the etching solution from entering the etching non-target area B2, gas (nitrogen gas) is supplied from the opening 35 provided at the center of the lower surface of the blocking member 5 (the surface facing the wafer W). Yes.
[0029]
Moreover, as shown in FIG. 4, the boundary line which divides etching object area | region A3 and non-etching object area | region B3 is set to a straight line, and blocking member 6 is made into the rectangular-shaped lower surface (hydrophobic surface) from the periphery of this lower surface. You may make it the structure which has the side surface (hydrophilic surface) which stood up substantially perpendicular | vertical, and the planar upper surface (hydrophilic surface) which inclined below as it approached the boundary line.
Further, in order to prevent the etching solution from entering the etching non-target area B3, gas (nitrogen gas) is supplied from a plurality of openings 45 provided on the lower surface of the blocking member 6 (surface facing the wafer W). Yes. The plurality of openings 45 are provided along a linear boundary line that divides the etching target area A3 and the etching non-target area B3. Further, the gas blowing direction from the plurality of openings 45 is inclined at a predetermined angle so as to generate an air flow in a direction from the non-etching target area B3 to the etching target area A3 on the upper surface of the wafer W. Is preferred.
[0030]
Further, in the embodiment shown in FIG. 4, the wafer W may be rotated around the rotation axis orthogonal to the wafer W by the substrate holding means for holding the wafer W. In this way, the etching target area A3 can be an annular area around the periphery of the wafer W. Here, if the rotation axis of the wafer W is set so as to pass through the center of the wafer W, the width of the annular region of the etching target region A3 can be made substantially constant over the entire circumference of the wafer W. Further, if the rotation axis of the wafer W is set away from the center of the wafer W, the width of the annular region of the etching target region A3 can be changed in the circumferential direction to form an eccentric annular region. When the wafer W is rotated in this way, the non-etching target area B3 is a circular area centered on the rotation axis of the wafer W.
[0031]
Furthermore, in the above-described embodiment, the nitrogen gas is supplied between the wafer W and the blocking member 2, but not limited to the nitrogen gas, for example, other inert gas such as helium gas or argon gas is supplied. It may be.
In the above-described embodiment, the blocking members 2, 5 and 6 are provided with side surfaces, but the blocking members do not have to have side surfaces. That is, the upper surface and the lower surface of the blocking member may directly intersect at the edge of the blocking member. However, when it is desired to further improve the accuracy of the shape of the etching target area, the side surface, particularly preferably the vertical side surface, is used as in the above-described embodiment.
[0032]
As mentioned above, although several embodiment of this invention was described, this invention can also be implemented with another form. For example, in the above-described embodiment, as an example of the processing for the processing target area of the wafer W, the processing for removing the unnecessary metal thin film formed on the wafer W with the etching solution is taken up. The process may be a peripheral edge cleaning process in which the peripheral edge of the wafer W is cleaned with a cleaning liquid. Alternatively, a resist removal process in which an unnecessary resist film formed on the wafer W is removed with a resist remover may be used.
[0033]
Further, the substrate to be processed is not limited to the wafer W, and may be other types of substrates such as a glass substrate for a liquid crystal display device, a glass substrate for a plasma display panel, and a glass substrate for a photomask.
In addition, various design changes can be made within the scope of matters described in the claims.
[Brief description of the drawings]
FIG. 1 is a diagram schematically showing a configuration of a substrate peripheral edge processing apparatus according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view showing how an etching solution flows down.
FIG. 3 is a plan view for explaining another embodiment of the present invention.
FIG. 4 is a plan view for explaining still another embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Spin chuck 2 Blocking member 3 Nozzle 5 Blocking member 6 Blocking member 21 Lower surface 22 Side surface 23 Upper surface 24 Nitrogen gas supply path 25 Opening 35 Opening 45 Opening A1 Etching target area A2 Etching target area A3 Etching target area B1 Non-etching target area B2 Etching Non-target area B3 Etching non-target area W Wafer

Claims (6)

A substrate processing apparatus for performing processing using a processing liquid on a peripheral portion of a substrate,
Substrate holding means for holding the substrate substantially horizontally and rotating the substrate about a substantially vertical rotation axis;
Substrate-facing surface of the hydrophobic facing the upper surface of the substrate held by the substrate holding means, inclined hydrophilic top so as to approach the edge of the substrate opposing surface toward the lower side, and the substrate-facing surface An edge is connected to the edge of the upper surface, and has a hydrophilic side surface extending in the vertical direction . The substrate facing surface is brought close to the upper surface of the substrate to protect the central portion of the upper surface of the substrate. An opposing member for,
A substrate processing apparatus comprising processing liquid supply means for supplying a processing liquid to the upper surface of the opposing member.   2. The substrate processing apparatus according to claim 1, wherein the facing member is formed in a rotating body shape having an axis substantially along the rotation axis as a central axis. A substrate processing apparatus for performing processing using a processing liquid on a processing target area including at least a part of a peripheral portion of a substrate,
Substrate holding means for holding the substrate;
A hydrophobic substrate facing surface having an edge corresponding to a boundary line that opposes the upper surface of the substrate held by the substrate holding means and divides the processing target area and the non-processing target area set on the upper surface of the substrate ; connect inclined hydrophilic top so as to approach the edge of the substrate opposing surface toward the lower side, and the edge of the edge and the upper surface of said substrate facing surface, the hydrophilic side of the vertically extending An opposing member for protecting the non-processing target area on the upper surface of the substrate by bringing the substrate facing surface close to the upper surface of the substrate, and
A substrate processing apparatus comprising processing liquid supply means for supplying a processing liquid to the upper surface of the opposing member. The inert gas supply means which supplies an inert gas between the upper surface of the board | substrate hold | maintained at the said board | substrate holding means and the said board | substrate opposing surface is further included, The Claim 1 thru | or 3 characterized by the above-mentioned. Substrate processing equipment. A method for performing processing using a processing liquid on a peripheral portion of a substrate,
A substrate rotation holding step of rotating the substrate about a substantially vertical rotation axis in a substantially horizontal posture by the substrate holding means;
Substrate-facing surface of the hydrophobic facing the upper surface of the substrate held by the substrate holding means, inclined hydrophilic top so as to approach the edge of the substrate opposing surface toward the lower side, and the substrate-facing surface An opposing member proximity step of connecting an edge and the edge of the upper surface, and bringing an opposing member having a hydrophilic side surface extending in the vertical direction close to the upper surface of the substrate held by the substrate holding means;
By supplying a processing liquid to the upper surface of the opposing member, the treatment liquid supplying step to flow down the peripheral portion of the substrate held by the substrate holding means and the treatment liquid from the edge of the substrate opposing surface by Tsutawa the side And a substrate processing method. A method for performing processing using a processing liquid on a processing target area of a substrate,
A substrate holding step for holding the substrate substantially horizontally by the substrate holding means;
A hydrophobic substrate facing surface having an edge corresponding to a boundary line that opposes the upper surface of the substrate held by the substrate holding means and divides the processing target area and the non-processing target area set on the upper surface of the substrate ; connect inclined hydrophilic top so as to approach the edge of the substrate opposing surface toward the lower side, and the edge of the edge and the upper surface of said substrate facing surface, the hydrophilic side of the vertically extending A counter member proximity step of bringing a counter member having a proximity to the upper surface of the substrate held by the substrate holding means;
A processing liquid is supplied to the upper surface of the opposing member, and the processing liquid is caused to flow along the side surface and flow down from the edge of the substrate opposing surface to the processing target area of the substrate held by the substrate holding means. A substrate processing method comprising: a supplying step.

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