JPH0137851B2 - - Google Patents

Info

Publication number
JPH0137851B2
JPH0137851B2 JP55177245A JP17724580A JPH0137851B2 JP H0137851 B2 JPH0137851 B2 JP H0137851B2 JP 55177245 A JP55177245 A JP 55177245A JP 17724580 A JP17724580 A JP 17724580A JP H0137851 B2 JPH0137851 B2 JP H0137851B2
Authority
JP
Japan
Prior art keywords
curvature
support layer
semiconductor
single crystal
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55177245A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57102044A (en
Inventor
Hironori Inoe
Takaya Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55177245A priority Critical patent/JPS57102044A/ja
Publication of JPS57102044A publication Critical patent/JPS57102044A/ja
Publication of JPH0137851B2 publication Critical patent/JPH0137851B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP55177245A 1980-12-17 1980-12-17 Insulating isolation substrate Granted JPS57102044A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55177245A JPS57102044A (en) 1980-12-17 1980-12-17 Insulating isolation substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55177245A JPS57102044A (en) 1980-12-17 1980-12-17 Insulating isolation substrate

Publications (2)

Publication Number Publication Date
JPS57102044A JPS57102044A (en) 1982-06-24
JPH0137851B2 true JPH0137851B2 (enrdf_load_stackoverflow) 1989-08-09

Family

ID=16027684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55177245A Granted JPS57102044A (en) 1980-12-17 1980-12-17 Insulating isolation substrate

Country Status (1)

Country Link
JP (1) JPS57102044A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6446347U (enrdf_load_stackoverflow) * 1987-09-18 1989-03-22

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5081061A (en) * 1990-02-23 1992-01-14 Harris Corporation Manufacturing ultra-thin dielectrically isolated wafers

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51131280A (en) * 1975-05-12 1976-11-15 Hitachi Ltd Dielectric insulation separation base manufacturing process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6446347U (enrdf_load_stackoverflow) * 1987-09-18 1989-03-22

Also Published As

Publication number Publication date
JPS57102044A (en) 1982-06-24

Similar Documents

Publication Publication Date Title
JPH0137851B2 (enrdf_load_stackoverflow)
US3974006A (en) Method of obtaining high temperature resistant assemblies comprising isolated silicon islands bonded to a substrate
US4173674A (en) Dielectric insulator separated substrate for semiconductor integrated circuits
JP2721265B2 (ja) 半導体基板の製造方法
JPS6152572B2 (enrdf_load_stackoverflow)
CA1059647A (en) Method of preparing dielectric insulator separated substrate for semiconductor integrated circuits
JPS60193324A (ja) 半導体基板の製造方法
US4606936A (en) Stress free dielectric isolation technology
JPH0443419B2 (enrdf_load_stackoverflow)
JPS6056291B2 (ja) 誘電体絶縁分離基板の製造法
JP2975496B2 (ja) 素子分離構造の形成方法
JPS62124753A (ja) 絶縁層分離基板の製法
JPS5840337B2 (ja) 半導体集積回路の製造方法
JP2674743B2 (ja) 半導体装置
JPS63108717A (ja) 半導体装置の製造方法
JPS6038872B2 (ja) 半導体装置の製造方法
JPS62198118A (ja) 半導体装置の製造方法
JPS6218719A (ja) 半導体装置の製造方法
JPS6248040A (ja) 絶縁分離基板及びその製造方法
JPS62219916A (ja) 半導体装置の製造方法
JPS62124754A (ja) 絶縁層分離基板の製法
JPS61184814A (ja) 半導体装置の製造方法
JPS6244417B2 (enrdf_load_stackoverflow)
JPS5867046A (ja) 半導体装置の製造方法
JPH08222625A (ja) 誘電体分離基板の製造方法