JPH0443419B2 - - Google Patents
Info
- Publication number
- JPH0443419B2 JPH0443419B2 JP1994784A JP1994784A JPH0443419B2 JP H0443419 B2 JPH0443419 B2 JP H0443419B2 JP 1994784 A JP1994784 A JP 1994784A JP 1994784 A JP1994784 A JP 1994784A JP H0443419 B2 JPH0443419 B2 JP H0443419B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- single crystal
- substrate
- support layer
- curvature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052710 silicon Inorganic materials 0.000 claims description 67
- 239000010703 silicon Substances 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 53
- 239000013078 crystal Substances 0.000 claims description 43
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 30
- 229910052760 oxygen Inorganic materials 0.000 claims description 30
- 239000001301 oxygen Substances 0.000 claims description 30
- 238000002955 isolation Methods 0.000 claims description 17
- 230000002265 prevention Effects 0.000 claims description 15
- 238000000926 separation method Methods 0.000 claims description 13
- 230000008595 infiltration Effects 0.000 claims description 11
- 238000001764 infiltration Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 66
- 238000010438 heat treatment Methods 0.000 description 25
- 238000000034 method Methods 0.000 description 18
- 239000012535 impurity Substances 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1994784A JPS60165737A (ja) | 1984-02-08 | 1984-02-08 | 絶縁分離基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1994784A JPS60165737A (ja) | 1984-02-08 | 1984-02-08 | 絶縁分離基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60165737A JPS60165737A (ja) | 1985-08-28 |
| JPH0443419B2 true JPH0443419B2 (enrdf_load_stackoverflow) | 1992-07-16 |
Family
ID=12013394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1994784A Granted JPS60165737A (ja) | 1984-02-08 | 1984-02-08 | 絶縁分離基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60165737A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4892842A (en) * | 1987-10-29 | 1990-01-09 | Tektronix, Inc. | Method of treating an integrated circuit |
-
1984
- 1984-02-08 JP JP1994784A patent/JPS60165737A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60165737A (ja) | 1985-08-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0451071B2 (enrdf_load_stackoverflow) | ||
| JP2682529B2 (ja) | 半導体素子の素子分離絶縁膜形成方法 | |
| US4879253A (en) | Method for fabricating a semiconductor device using a BPSG layer containing high concentrations of phosphorus and boron | |
| US6066576A (en) | Method for forming oxide using high pressure | |
| US5122473A (en) | Process for forming a field isolation structure and gate structures in integrated misfet devices | |
| JPS6155252B2 (enrdf_load_stackoverflow) | ||
| JPH0443419B2 (enrdf_load_stackoverflow) | ||
| EP0127814A1 (en) | Process for forming a narrow mesa on a substrate and process for making a self-aligned gate field effect transistor | |
| JPH0473296B2 (enrdf_load_stackoverflow) | ||
| US4173674A (en) | Dielectric insulator separated substrate for semiconductor integrated circuits | |
| JPH01184957A (ja) | Ｍｏｓトランジスタの製造方法 | |
| CA1059647A (en) | Method of preparing dielectric insulator separated substrate for semiconductor integrated circuits | |
| JPS5812340A (ja) | 半導体装置の製造方法 | |
| JPS60193324A (ja) | 半導体基板の製造方法 | |
| JPH0137851B2 (enrdf_load_stackoverflow) | ||
| JPS6155250B2 (enrdf_load_stackoverflow) | ||
| JPH0528501B2 (enrdf_load_stackoverflow) | ||
| JPH049371B2 (enrdf_load_stackoverflow) | ||
| JPS6056291B2 (ja) | 誘電体絶縁分離基板の製造法 | |
| JPS5840337B2 (ja) | 半導体集積回路の製造方法 | |
| JPS62124753A (ja) | 絶縁層分離基板の製法 | |
| JPS62219916A (ja) | 半導体装置の製造方法 | |
| JPH10321616A (ja) | 半導体素子の素子分離絶縁膜形成方法 | |
| JPH02268443A (ja) | 半導体装置 | |
| JPS62177958A (ja) | 半導体装置の製造方法 |