JPH0136696B2 - - Google Patents

Info

Publication number
JPH0136696B2
JPH0136696B2 JP57150752A JP15075282A JPH0136696B2 JP H0136696 B2 JPH0136696 B2 JP H0136696B2 JP 57150752 A JP57150752 A JP 57150752A JP 15075282 A JP15075282 A JP 15075282A JP H0136696 B2 JPH0136696 B2 JP H0136696B2
Authority
JP
Japan
Prior art keywords
wafer
ion implantation
disk
support means
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57150752A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5941828A (ja
Inventor
Toshimichi Taya
Osami Okada
Kunyuki Sakumichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57150752A priority Critical patent/JPS5941828A/ja
Publication of JPS5941828A publication Critical patent/JPS5941828A/ja
Publication of JPH0136696B2 publication Critical patent/JPH0136696B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP57150752A 1982-09-01 1982-09-01 イオン打込装置 Granted JPS5941828A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57150752A JPS5941828A (ja) 1982-09-01 1982-09-01 イオン打込装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57150752A JPS5941828A (ja) 1982-09-01 1982-09-01 イオン打込装置

Publications (2)

Publication Number Publication Date
JPS5941828A JPS5941828A (ja) 1984-03-08
JPH0136696B2 true JPH0136696B2 (fr) 1989-08-02

Family

ID=15503636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57150752A Granted JPS5941828A (ja) 1982-09-01 1982-09-01 イオン打込装置

Country Status (1)

Country Link
JP (1) JPS5941828A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4700077A (en) * 1986-03-05 1987-10-13 Eaton Corporation Ion beam implanter control system
EP0287630A4 (fr) * 1986-10-08 1989-07-25 Varian Associates Procede et appareil de balayage a angle d'incidence constant pour systemes a faisceaux d'ions.

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52123174A (en) * 1976-04-09 1977-10-17 Hitachi Ltd Specimen scanning method for ion implantation
JPS53119670A (en) * 1977-03-28 1978-10-19 Toshiba Corp Ion implanting method and apparatus for the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52123174A (en) * 1976-04-09 1977-10-17 Hitachi Ltd Specimen scanning method for ion implantation
JPS53119670A (en) * 1977-03-28 1978-10-19 Toshiba Corp Ion implanting method and apparatus for the same

Also Published As

Publication number Publication date
JPS5941828A (ja) 1984-03-08

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