JP4016279B2 - ウエハの受け台傾斜機構及び冷却システム - Google Patents
ウエハの受け台傾斜機構及び冷却システム Download PDFInfo
- Publication number
- JP4016279B2 JP4016279B2 JP2003539071A JP2003539071A JP4016279B2 JP 4016279 B2 JP4016279 B2 JP 4016279B2 JP 2003539071 A JP2003539071 A JP 2003539071A JP 2003539071 A JP2003539071 A JP 2003539071A JP 4016279 B2 JP4016279 B2 JP 4016279B2
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- Prior art keywords
- wafer
- passage
- cooling
- pad assembly
- pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000001816 cooling Methods 0.000 title claims description 61
- 230000007246 mechanism Effects 0.000 title description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 title description 4
- 239000003507 refrigerant Substances 0.000 claims description 17
- 239000012530 fluid Substances 0.000 claims description 11
- 238000004891 communication Methods 0.000 claims description 10
- 230000000295 complement effect Effects 0.000 claims description 5
- 230000000712 assembly Effects 0.000 claims description 3
- 238000000429 assembly Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 91
- 150000002500 ions Chemical class 0.000 description 23
- 238000010884 ion-beam technique Methods 0.000 description 13
- 238000005468 ion implantation Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 230000033001 locomotion Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000002528 anti-freeze Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20207—Tilt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
101 上部表面 102 ウエハ支持パッド
103 冷却通路 103a 入口部分
103b 出口部分 130 カバープレート
200 半径フレーム 205 カムフォロア
206 戻り用の冷却ライン 208 供給用の冷却ライン
300 カムハウジング
Claims (15)
- イオン注入装置内に配置され、かつウエハを取り付け及び冷却する、少なくとも1つのウエハパッドアセンブリを含んでいるウエハプラットフォームであって、前記ウエハパッドアセンブリが、
前記ウエハを取り付ける上部表面と、冷却通路に接続されている下部表面とを有するウエハ支持パッドを含み、前記冷却通路は、入口部分と出口部分の2つの部分を備え、前記入口部分と出口部分は、前記ウエハ支持パッド内において対称形状で対向配置され、前記入口部分の冷媒の質量が、出口部分の冷媒の質量と釣り合っており、
前記ウエハ支持パッドの前記下部表面が外側湾曲面を有するフレームに接続され、前記外側湾曲面がハウジングに設けられた補完形状の支持面に噛み合って、前記ウエハが1つの軸回りに回転可能となり、
前記支持面は、さらに、冷却用システムラインの供給ラインと戻りラインのそれぞれと流体連通する前記冷却通路への供給通路及び戻り通路を含むことを特徴とするウエハプラットフォーム。 - 前記入口部分の入口端及び前記出口部分の出口端は、前記上部表面の中心近くに配置されていることを特徴とする請求項1記載のウエハプラットフォーム。
- 前記冷却通路は、蛇行した形状に配置されていることを特徴とする請求項1記載のウエハプラットフォーム。
- 前記供給ライン及び戻りラインは、それぞれ冷却通路の入口及び出口と流体連通することを特徴とする請求項1記載のウエハプラットフォーム。
- 前記フレームは、さらに、1つまたは複数のカムフォロアを介してハウジングに固定された湾曲した軌道を含むことを特徴とする請求項1記載のウエハプラットフォーム。
- 前記フレームの外側湾曲面は、前記支持面の供給通路及び戻り通路を密閉する機能を有することを特徴とする請求項1記載のウエハプラットフォーム。
- 前記少なくとも1つのウエハパッドアセンブリは、複数のウエハパッドアセンブリがウエハプラットフォームに配置されていることを特徴とする請求項1記載のウエハプラットフォーム。
- ウエハを取り付け、かつイオン注入装置内に配置されるウエハパッドアセンブリであって、
前記ウエハを取り付ける上部表面と、外側湾曲面を有するフレームに接続される下部表面と、この下部表面に接続される冷却通路とを有しているウエハ支持パッドを含み、
前記フレームの前記外側湾曲面がハウジングに設けられた補完形状の支持面に噛み合あって、前記ウエハが1つの軸回りに回転可能となり、
前記支持面は、さらに、冷却用システムラインの供給ラインと戻りラインのそれぞれと流体連通する前記冷却通路への供給通路及び戻り通路を含むことを特徴とするウエハパッドアセンブリ。 - 前記外側湾曲面は、凸面であることを特徴とする請求項8記載のウエハパッドアセンブリ。
- 前記フレームは、さらに、1つまたは複数のカムフォロアを介してハウジングに固定された湾曲した軌道を含むことを特徴とする請求項8記載のウエハパッドアセンブリ。
- 前記ウエハは、0°〜45°の範囲に、1つの軸回りに傾斜可能であることを特徴とする請求項8記載のウエハパッドアセンブリ。
- 前記フレームは、さらに、複数のカムフォロアを介して前記ハウジングに固定される対向軌道を含むことを特徴とする請求項8記載のウエハパッドアセンブリ。
- 前記冷却通路は、ウエハ支持パッド内において対称形状で対向配置された入口部分と出口部分の2つの部分を備え、前記入口部分の冷媒の質量が、出口部分の冷媒の質量と釣り合っていることを特徴とする請求項8記載のウエハパッドアセンブリ。
- 前記戻り通路は、前記冷却通路の出口と前記戻りラインとに流体連通し、前記供給通路は、前記冷却通路の入口と前記供給ラインと流体連通することを特徴とする請求項13記載のウエハパッドアセンブリ。
- 前記支持面は、前記戻り通路と前記供給通路を密閉することを特徴とする請求項13記載のウエハパッドアセンブリ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/054,325 US6734439B2 (en) | 2001-10-25 | 2001-10-25 | Wafer pedestal tilt mechanism and cooling system |
PCT/US2002/034382 WO2003036679A2 (en) | 2001-10-25 | 2002-10-25 | Wafer pedestal tilt mechanism and cooling system |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005507147A JP2005507147A (ja) | 2005-03-10 |
JP4016279B2 true JP4016279B2 (ja) | 2007-12-05 |
Family
ID=21990271
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003539071A Expired - Fee Related JP4016279B2 (ja) | 2001-10-25 | 2002-10-25 | ウエハの受け台傾斜機構及び冷却システム |
Country Status (7)
Country | Link |
---|---|
US (1) | US6734439B2 (ja) |
EP (1) | EP1438733A2 (ja) |
JP (1) | JP4016279B2 (ja) |
KR (1) | KR20040047853A (ja) |
CN (1) | CN1575504A (ja) |
TW (1) | TW577156B (ja) |
WO (1) | WO2003036679A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101450479B1 (ko) * | 2013-12-02 | 2014-10-13 | (주)쎄스텍 | 이온주입장치 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7394076B2 (en) | 2004-08-18 | 2008-07-01 | New Way Machine Components, Inc. | Moving vacuum chamber stage with air bearing and differentially pumped grooves |
US7358508B2 (en) * | 2005-11-10 | 2008-04-15 | Axcelis Technologies, Inc. | Ion implanter with contaminant collecting surface |
DE102007026847A1 (de) * | 2007-06-06 | 2008-12-11 | Carl Zeiss Nts Gmbh | Teilchenstrahlgerät und Verfahren zur Anwendung bei einem Teilchenstrahlgerät |
US9009939B2 (en) * | 2009-06-05 | 2015-04-21 | Advanced Ion Beam Technology, Inc (Tw) | Method and system for moving wafer during scanning the wafer |
JP5918999B2 (ja) * | 2012-01-06 | 2016-05-18 | 株式会社日立ハイテクノロジーズ | 真空容器を備えた荷電粒子線照射装置 |
JP6310876B2 (ja) * | 2015-03-17 | 2018-04-11 | 株式会社日立製作所 | 試料ホルダ、ステージ装置およびそれを用いた荷電粒子線装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58194240A (ja) * | 1982-05-10 | 1983-11-12 | Nisshin Haiboruteeji Kk | イオン注入装置のタ−ゲツト冷却装置 |
JP2507302B2 (ja) * | 1984-09-19 | 1996-06-12 | アプライド マテリアルズ インコーポレーテッド | 半導体ウエハをイオンインプランテ−シヨンする装置及び方法 |
US4672210A (en) * | 1985-09-03 | 1987-06-09 | Eaton Corporation | Ion implanter target chamber |
US5040484A (en) * | 1987-05-04 | 1991-08-20 | Varian Associates, Inc. | Apparatus for retaining wafers |
JPH0268847A (ja) * | 1988-09-05 | 1990-03-08 | Nippon Telegr & Teleph Corp <Ntt> | 試料ステージ |
US5338940A (en) * | 1991-07-22 | 1994-08-16 | Nissin High Voltage Co., Ltd. | Apparatus for ion implantation including contactless cooling and beam current measurement means |
JPH11265681A (ja) * | 1998-03-17 | 1999-09-28 | Ebara Corp | イオン注入基板保持装置及びイオン注入装置 |
US6313469B1 (en) * | 1998-03-13 | 2001-11-06 | Ebara Corporation | Substrate handling apparatus and ion implantation apparatus |
US6222196B1 (en) * | 1998-11-19 | 2001-04-24 | Axcelis Technologies, Inc. | Rotatable workpiece support including cyclindrical workpiece support surfaces for an ion beam implanter |
US6246060B1 (en) * | 1998-11-20 | 2001-06-12 | Agere Systems Guardian Corp. | Apparatus for holding and aligning a scanning electron microscope sample |
US6583428B1 (en) * | 2000-09-26 | 2003-06-24 | Axcelis Technologies, Inc. | Apparatus for the backside gas cooling of a wafer in a batch ion implantation system |
-
2001
- 2001-10-25 US US10/054,325 patent/US6734439B2/en not_active Expired - Lifetime
-
2002
- 2002-10-25 TW TW091124983A patent/TW577156B/zh not_active IP Right Cessation
- 2002-10-25 EP EP02776323A patent/EP1438733A2/en not_active Withdrawn
- 2002-10-25 CN CNA028211952A patent/CN1575504A/zh active Pending
- 2002-10-25 JP JP2003539071A patent/JP4016279B2/ja not_active Expired - Fee Related
- 2002-10-25 WO PCT/US2002/034382 patent/WO2003036679A2/en active Application Filing
- 2002-10-25 KR KR10-2004-7004315A patent/KR20040047853A/ko not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101450479B1 (ko) * | 2013-12-02 | 2014-10-13 | (주)쎄스텍 | 이온주입장치 |
Also Published As
Publication number | Publication date |
---|---|
WO2003036679A2 (en) | 2003-05-01 |
EP1438733A2 (en) | 2004-07-21 |
JP2005507147A (ja) | 2005-03-10 |
US6734439B2 (en) | 2004-05-11 |
KR20040047853A (ko) | 2004-06-05 |
US20030080300A1 (en) | 2003-05-01 |
CN1575504A (zh) | 2005-02-02 |
WO2003036679A3 (en) | 2004-02-26 |
TW577156B (en) | 2004-02-21 |
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