JPH0133278B2 - - Google Patents

Info

Publication number
JPH0133278B2
JPH0133278B2 JP13229782A JP13229782A JPH0133278B2 JP H0133278 B2 JPH0133278 B2 JP H0133278B2 JP 13229782 A JP13229782 A JP 13229782A JP 13229782 A JP13229782 A JP 13229782A JP H0133278 B2 JPH0133278 B2 JP H0133278B2
Authority
JP
Japan
Prior art keywords
solder
silver
indium
lead
content
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13229782A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5825894A (ja
Inventor
Andoryu Deibiizu Neiru
Toomasu Erufuetsudo Hyuugesu Edowaado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS5825894A publication Critical patent/JPS5825894A/ja
Publication of JPH0133278B2 publication Critical patent/JPH0133278B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W70/24—
    • H10W72/30—
    • H10W72/073—
    • H10W72/07336—
    • H10W72/352—

Landscapes

  • Die Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
JP57132297A 1981-07-31 1982-07-30 半導体装置およびこれに用いるはんだ Granted JPS5825894A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8123478A GB2102833B (en) 1981-07-31 1981-07-31 Lead-indium-silver alloy for use in semiconductor devices
GB8123478 1981-07-31

Publications (2)

Publication Number Publication Date
JPS5825894A JPS5825894A (ja) 1983-02-16
JPH0133278B2 true JPH0133278B2 (enExample) 1989-07-12

Family

ID=10523597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57132297A Granted JPS5825894A (ja) 1981-07-31 1982-07-30 半導体装置およびこれに用いるはんだ

Country Status (5)

Country Link
US (1) US4504849A (enExample)
EP (1) EP0071314B1 (enExample)
JP (1) JPS5825894A (enExample)
DE (1) DE3271833D1 (enExample)
GB (1) GB2102833B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU591231B2 (en) * 1986-02-18 1989-11-30 Parker Chemical Company Aluminum cleaning process
GB2201545B (en) * 1987-01-30 1991-09-11 Tanaka Electronics Ind Method for connecting semiconductor material
JPH01259547A (ja) * 1988-04-08 1989-10-17 Sumitomo Electric Ind Ltd 半導体装置用部品
JPH02310330A (ja) * 1989-05-25 1990-12-26 Taiho Kogyo Co Ltd すべり軸受用オーバレイ合金
US5027189A (en) * 1990-01-10 1991-06-25 Hughes Aircraft Company Integrated circuit solder die-attach design and method
JPH09321187A (ja) * 1996-05-27 1997-12-12 Mitsubishi Electric Corp 混成集積回路の製造方法およびその構造
US5982038A (en) * 1997-05-01 1999-11-09 International Business Machines Corporation Cast metal seal for semiconductor substrates
US20070228112A1 (en) * 2006-03-31 2007-10-04 Wei Shi Method and arrangement for forming a microelectronic package
US7649730B2 (en) * 2007-03-20 2010-01-19 Avx Corporation Wet electrolytic capacitor containing a plurality of thin powder-formed anodes

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1149606A (en) * 1967-02-27 1969-04-23 Motorola Inc Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses
US3601667A (en) * 1968-12-09 1971-08-24 Gen Electric A semiconductor device with a heat sink having a foot portion
US3706915A (en) * 1970-03-09 1972-12-19 Gen Electric Semiconductor device with low impedance bond
US3878442A (en) * 1970-05-26 1975-04-15 Harshad J Bhatt Electrical conductor having a high resistance to electromigration
US3771211A (en) * 1970-09-18 1973-11-13 Ppg Industries Inc Method of fabricating transparent electroconductive window
US3820152A (en) * 1973-04-24 1974-06-25 Du Pont Circuit package with fugitive shorting bar
US3913120A (en) * 1973-12-28 1975-10-14 Ibm Thin film resistors and contacts for circuitry
US3986255A (en) * 1974-11-29 1976-10-19 Itek Corporation Process for electrically interconnecting chips with substrates employing gold alloy bumps and magnetic materials therein
JPS5578536A (en) * 1978-12-08 1980-06-13 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
DE3271833D1 (en) 1986-07-31
US4504849A (en) 1985-03-12
GB2102833B (en) 1984-08-01
EP0071314A2 (en) 1983-02-09
JPS5825894A (ja) 1983-02-16
GB2102833A (en) 1983-02-09
EP0071314A3 (en) 1984-04-25
EP0071314B1 (en) 1986-06-25

Similar Documents

Publication Publication Date Title
US4005454A (en) Semiconductor device having a solderable contacting coating on its opposite surfaces
EP0070435B1 (en) Semiconductor device comprising a semiconductor substrate bonded to a mounting means
US4784974A (en) Method of making a hermetically sealed semiconductor casing
CN102074536B (zh) 功率半导体装置及其制造方法
US6130479A (en) Nickel alloy films for reduced intermetallic formation in solder
JPH0261539B2 (enExample)
CN85108637A (zh) 电子电路器件及其制造方法
US4226917A (en) Composite joint system including composite structure of carbon fibers embedded in copper matrix
US20030201532A1 (en) Connection device and method for producing the same
US5106009A (en) Methods of joining components
JPH0133278B2 (enExample)
JP2006066716A (ja) 半導体装置
JP2005340268A (ja) トランジスタパッケージ
JP4147875B2 (ja) ろう材、これを用いた半導体装置の組み立て方法並びに半導体装置
US4591484A (en) Lead materials for semiconductor devices
CA1201211A (en) Hermetically sealed semiconductor casing
US5489803A (en) Solder-bonded structure
US20060263235A1 (en) Solder alloy and a semiconductor device using the solder alloy
JPH03255637A (ja) ダイボンディング用半田
JP2696507B2 (ja) 複合ろう材のろう付方法
US4921158A (en) Brazing material
JPS639665B2 (enExample)
US7816249B2 (en) Method for producing a semiconductor device using a solder alloy
JP2005177842A (ja) ろう材、これを用いた半導体装置の製造方法並びに半導体装置
JPH0431800B2 (enExample)