JPH01319937A - Heat-treatment method for pyroelectric material - Google Patents
Heat-treatment method for pyroelectric materialInfo
- Publication number
- JPH01319937A JPH01319937A JP63153188A JP15318888A JPH01319937A JP H01319937 A JPH01319937 A JP H01319937A JP 63153188 A JP63153188 A JP 63153188A JP 15318888 A JP15318888 A JP 15318888A JP H01319937 A JPH01319937 A JP H01319937A
- Authority
- JP
- Japan
- Prior art keywords
- pyroelectric material
- hot plate
- pyroelectric
- heat treatment
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 33
- 238000010438 heat treatment Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 15
- 238000005530 etching Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000000956 alloy Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008602 contraction Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は焦電材料を用いて表面弾性波フィルタ等を製造
する工程において焦電材料を含む基板上のホトレジスト
を露光、現像後エツチング前に硬化させて基板との密着
性及び耐プラズマ性を良（させるホトレジストの加熱処
理方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is a process for manufacturing a surface acoustic wave filter or the like using a pyroelectric material, in which a photoresist on a substrate containing a pyroelectric material is cured after exposure and development and before etching. The present invention relates to a heat treatment method for photoresist that improves its adhesion to a substrate and its plasma resistance.
従来の技術
近年１表面弾性波を通信工学の領域に採用する試みが急
速に高まってきており、その主基板となる焦電材料の加
工上の取り扱いが問題となっている。BACKGROUND OF THE INVENTION In recent years, there has been a rapid increase in attempts to apply surface acoustic waves to the field of communication engineering, and the handling of pyroelectric materials, which are the main substrate, during processing has become a problem.
従来、焦電材料上にＡｅあるいはＡ２合金のすだれ状電
極やグレーティングを形成する場合には通常のフォトエ
ツチング法を用いているが線幅が狭（なる（４μｍ以下
）に従ってドライエツチングの採用が不可欠になってき
ている。ドライエツチングの採用においては、Ａｅある
いはＡｅ合金配線形成のマスクとなるレジストの耐プラ
ズマ性が要求される為ドライエツチング前にレジストの
加熱処理が行われている。Conventionally, when forming interdigital electrodes or gratings of Ae or A2 alloy on pyroelectric materials, normal photoetching is used, but as the line width becomes narrower (4 μm or less), dry etching becomes essential. When dry etching is employed, the resist, which serves as a mask for forming Ae or Ae alloy wiring, is required to have plasma resistance, so the resist is heated before dry etching.
従来のレジスト加熱処理方法は、たとえば第２図に示す
ようなものである、第２図において、ホットプレート１
は内部に電熱ヒータ２を内蔵している。そして、ホット
プレート１の上には被熱処理物である基板３が載置され
ている。この基板３は、ＡｅあるいはＡ２合金の金属膜
４を焦電材料５の上に形成し、この金属膜４の上にホト
レジストホトレジスト６を一体的に構成したものであり
、焦電材料５をホットプレート１に当接させて配置され
ている。そして、ホットプレート１の上に載置された基
板３を、電熱ヒータ２により加熱処理することによって
、ホトレジストの硬化処理を行なっていた。また他のホ
トレジスト硬化装置として強制熱風循環・換気方式の恒
温器を用いてＮ２雰囲気で加熱処理する装置があり、現
在、この恒温器を用いて加熱処理する装置が、焦電材料
を含む基板上のホトレジスト硬化を行うために、多く使
用されている。A conventional resist heat treatment method is as shown in FIG. 2, for example.
has an electric heater 2 built-in. A substrate 3, which is an object to be heat-treated, is placed on the hot plate 1. This substrate 3 has a metal film 4 of Ae or A2 alloy formed on a pyroelectric material 5, and a photoresist 6 is integrally formed on this metal film 4. It is placed in contact with the plate 1. Then, the substrate 3 placed on the hot plate 1 is heated by the electric heater 2 to harden the photoresist. In addition, there is another photoresist curing device that uses a thermostat with forced hot air circulation and ventilation to perform heat treatment in an N2 atmosphere. It is widely used to harden photoresists.
発明が解決しようとする課題
しかしながら上記のような従来の加熱処理方法では、焦
電材料の焦電効果により、焦電材料が電気的に分極され
、わずかな衝撃でも割れ、破損を生じるので、加熱、冷
却時に長時間を必要とする問題と、１枚のホットプレー
トを用いた加熱処理方法においては、焦電材料の温度が
瞬間的変化を生じるために、収縮、膨脹により割れやす
（、また、焦電効果によりホットプレートに密着するの
で搬送が難しいという問題点を有していた。本発明は上
記問題点に鑑み、焦電材料上にＡｅあるいはＡｅ合金配
線を形成するためのフォトエツチング法においてＡｅあ
るいはＡｅ合金膜上のホトレジストをホットプレートを
用いて加熱処理する方法を提供するものである。Problems to be Solved by the Invention However, in the conventional heat treatment method as described above, the pyroelectric material becomes electrically polarized due to the pyroelectric effect of the pyroelectric material, causing cracking and damage even with the slightest impact. The problem is that it takes a long time to cool down, and the heat treatment method using a single hot plate causes instantaneous changes in the temperature of the pyroelectric material, making it susceptible to cracking due to contraction and expansion. There was a problem in that it was difficult to transport because it adhered to the hot plate due to the pyroelectric effect.In view of the above problems, the present invention is a photoetching method for forming Ae or Ae alloy wiring on pyroelectric material. The present invention provides a method of heat-treating a photoresist on an Ae or Ae alloy film using a hot plate.
課題を解決するための手段
上記問題点を解決するために、本発明の焦電材料の加熱
処理方法は加熱しようとする材料をホットプレートを用
いた加熱処理において、温度差をつけた数個のホットプ
レート上を移動させるものであり、さらには、ホットプ
レートと焦電材料の吸着を防ぐためにホットプレート上
に突起を設けたものである。Means for Solving the Problems In order to solve the above-mentioned problems, the method for heat treatment of pyroelectric materials of the present invention heats the material to be heated using a hot plate. It is moved on a hot plate, and furthermore, protrusions are provided on the hot plate to prevent the hot plate from adhering to the pyroelectric material.
作 用
本発明の第１の発明の作用は上記した構成によって数個
の温度差つけたホットプレートを用いるため焦電材料の
瞬間的温度変化を小さくし、収縮、膨脹による割れをな
くすことができる。また本発明の第２の発明の作用は上
記したホットプレート上に突起を設けることにより、焦
電材料の瞬間的温度変化の軽減とホップレートとの吸着
を防止することができ焦電材料の加熱処理を容易するこ
とができる。Function The function of the first invention of the present invention is that the above-described configuration uses several hot plates with different temperatures, thereby reducing the instantaneous temperature change of the pyroelectric material and eliminating cracks caused by contraction and expansion. . Further, the second aspect of the present invention is that by providing a protrusion on the hot plate described above, it is possible to reduce the instantaneous temperature change of the pyroelectric material and prevent adsorption with the hop rate, thereby heating the pyroelectric material. Processing can be facilitated.
実施例
以下本発明の一実施例の焦電材料の加熱処理方法につい
て図面を参照しながら説明する。EXAMPLE Hereinafter, a heat treatment method for a pyroelectric material according to an example of the present invention will be described with reference to the drawings.
本発明の第１の実施例における焦電材料の加熱処理方法
を実施するレジスト加熱処理装置の構成は、従来例のレ
ジスト加熱処理方法装置である第２図と同様である。本
発明の第１の実施例においてはホットプレート１を５セ
ツト用いてそれぞれの温度を７０℃、１４０ｅ １４０
℃、７０仁とし、各々のホットプレート間を基板３を搬
送するための図示していない搬送機構を設けた。搬送は
基板３を各ホットプレート１（５セツト）に各々３０Ｓ
ＥＣ〜６０ＳＥＣ保持後実施した。このようにホットプ
レートｌ（５セツト）に温度差を設け、一定時間保持後
搬送することにより、焦電材料（ＬｉＴａＯ３）の温度
の瞬間的温度変化を少なくすることができる。The configuration of a resist heat treatment apparatus for carrying out the heat treatment method for pyroelectric materials in the first embodiment of the present invention is the same as that shown in FIG. 2, which is a conventional resist heat treatment apparatus. In the first embodiment of the present invention, five sets of hot plates 1 are used, each with a temperature of 70°C and 140°C.
℃ and 70 cm, and a transport mechanism (not shown) was provided to transport the substrate 3 between the respective hot plates. Transfer the board 3 to each hot plate 1 (5 sets) for 30 seconds each.
It was carried out after holding EC to 60 SEC. In this way, by providing a temperature difference between the hot plates 1 (5 sets) and transporting them after holding them for a certain period of time, it is possible to reduce instantaneous temperature changes in the temperature of the pyroelectric material (LiTaO3).
以下、本発明の第２の実施例について図面を参照しなが
ら説明する。第２図は、本発明の第２の実施例における
焦電材料の加熱処理方法を実施するレジスト加熱処理装
置の構成を示す図である。A second embodiment of the present invention will be described below with reference to the drawings. FIG. 2 is a diagram showing the configuration of a resist heat treatment apparatus that implements a heat treatment method for pyroelectric material according to a second embodiment of the present invention.
本発明の第１の実施例と異なるのは、ホットプレート１
上に突起７を設けた点である。その他のホットプレート
数、ホットプレート温度は本発明の第１の実施例と同様
である。第１図に示すように基板３とホットプレート１
は突起７を介しているため面接触することがない。その
ために、基板３とホットプレート１の焦電効果による吸
着を防ぐことができる。また、突起７によ゛り基板３と
ホットプレート１の間に空間ができるので焦電材料の瞬
間的温度変化の軽減を図ることができる。The difference from the first embodiment of the present invention is that the hot plate 1
This is because a protrusion 7 is provided on the top. The other number of hot plates and hot plate temperature are the same as in the first embodiment of the present invention. As shown in Figure 1, the substrate 3 and the hot plate 1
There is no surface contact between the protrusions 7 and the protrusions 7. Therefore, adhesion between the substrate 3 and the hot plate 1 due to the pyroelectric effect can be prevented. Furthermore, since the projections 7 create a space between the substrate 3 and the hot plate 1, it is possible to reduce instantaneous temperature changes in the pyroelectric material.
突起７は、φ７＋ｉｎ 厚さ０．１＋ａｓでホットプ
レート１上に４ケ所、正方形の形で設置した。The protrusions 7 had a diameter of 7+in and a thickness of 0.1+as, and were installed at four locations on the hot plate 1 in a square shape.
発明の効果
以上のように本発明は、焦電材料の基板上に形成された
レジストの加熱処理を、温度差のつけた数個のホットプ
レートとホットプレート上に設けた数個の突起によって
焦電材料の瞬間的温度変化の軽減が図れると共に、突起
により、ホットプレートに面接触することがないために
焦電材料とホットプレートの吸着を防ぐことができる。Effects of the Invention As described above, the present invention heats a resist formed on a pyroelectric material substrate using several hot plates with different temperatures and several protrusions provided on the hot plates. The instantaneous temperature change of the electric material can be reduced, and since the protrusions do not make surface contact with the hot plate, it is possible to prevent the pyroelectric material from adhering to the hot plate.
第１図は本発明の一実施例に使用するレジスト加熱処理
装置の構成を示す概略図、第２図は従来のレジスト加熱
処理装置の構成を示す概略図である。
１・・・・・・ホットプレート、２・・・・・・電熱ヒ
ータ、３・・・・・・基板、４・・・・・・Ａｅあるい
はＡｅ合金の金属膜、５・・・・・・焦電材料、６・・
・・・・ホトレジスト、７・・・・・・突起。
代理人の氏名 弁理人 中尾敏男 ほか１名１−−一不
・ン）、ブＬ−トー
７一 突厄
第２図FIG. 1 is a schematic diagram showing the configuration of a resist heat treatment apparatus used in an embodiment of the present invention, and FIG. 2 is a schematic diagram showing the configuration of a conventional resist heat treatment apparatus. 1... Hot plate, 2... Electric heater, 3... Substrate, 4... Metal film of Ae or Ae alloy, 5...・Pyroelectric materials, 6...
...Photoresist, 7...Protrusion. Name of agent: Patent attorney Toshio Nakao and 1 other person 1--Ichifu・N), Buto L-71 Sudaku Figure 2
Claims (2)
トパターンを形成し、これをエッチングする前に、レジ
ストを硬化させる為に加熱処理する方法において、前記
焦電材料を温度差をつけた２個以上のホットプレート上
を移動させることによって行う焦電材料の加熱処理方法
。(1) A method in which a thin film is formed on a pyroelectric material, a resist pattern is formed on the thin film, and a heat treatment is performed to harden the resist before etching the pyroelectric material. A method of heating a pyroelectric material by moving it over two or more attached hot plates.
る請求項１記載の焦電材料の加熱処理方法。(2) The method for heat treatment of a pyroelectric material according to claim 1, characterized in that a protrusion is provided on the hot plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63153188A JP2797321B2 (en) | 1988-06-21 | 1988-06-21 | Pyroelectric material heat treatment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63153188A JP2797321B2 (en) | 1988-06-21 | 1988-06-21 | Pyroelectric material heat treatment method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01319937A true JPH01319937A (en) | 1989-12-26 |
| JP2797321B2 JP2797321B2 (en) | 1998-09-17 |
Family
ID=15556970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63153188A Expired - Lifetime JP2797321B2 (en) | 1988-06-21 | 1988-06-21 | Pyroelectric material heat treatment method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2797321B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100431658B1 (en) * | 2001-10-05 | 2004-05-17 | 삼성전자주식회사 | Apparatus for heating a substrate and apparatus having the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6285911A (en) * | 1985-09-24 | 1987-04-20 | ス−パ−ウエイブ テクノロジ− インコ−ポレ−テツド | Conveyor type heater for curing treatment after molding |
| JPS6331118A (en) * | 1986-07-25 | 1988-02-09 | Oki Electric Ind Co Ltd | Baking furnace |
-
1988
- 1988-06-21 JP JP63153188A patent/JP2797321B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6285911A (en) * | 1985-09-24 | 1987-04-20 | ス−パ−ウエイブ テクノロジ− インコ−ポレ−テツド | Conveyor type heater for curing treatment after molding |
| JPS6331118A (en) * | 1986-07-25 | 1988-02-09 | Oki Electric Ind Co Ltd | Baking furnace |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100431658B1 (en) * | 2001-10-05 | 2004-05-17 | 삼성전자주식회사 | Apparatus for heating a substrate and apparatus having the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2797321B2 (en) | 1998-09-17 |
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