JP2797321B2 - Pyroelectric material heat treatment method - Google Patents
Pyroelectric material heat treatment methodInfo
- Publication number
- JP2797321B2 JP2797321B2 JP63153188A JP15318888A JP2797321B2 JP 2797321 B2 JP2797321 B2 JP 2797321B2 JP 63153188 A JP63153188 A JP 63153188A JP 15318888 A JP15318888 A JP 15318888A JP 2797321 B2 JP2797321 B2 JP 2797321B2
- Authority
- JP
- Japan
- Prior art keywords
- pyroelectric material
- hot plate
- heat treatment
- treatment method
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 title claims description 29
- 238000010438 heat treatment Methods 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 18
- 238000005530 etching Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 229910000838 Al alloy Inorganic materials 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は焦電材料を用いて表面弾性波フィルタ等を製
造する工程において焦電材料を含む基板上のホトレジス
トを露光、現像後エッチング前に硬化させて基板との密
着性及び耐プラズマ性を良くさせるホトレジストの加熱
処理方法に関するものである。The present invention relates to a process for manufacturing a surface acoustic wave filter or the like using a pyroelectric material, in which a photoresist on a substrate containing the pyroelectric material is exposed and cured after development and before etching. The present invention relates to a photoresist heat treatment method for improving the adhesion to a substrate and the plasma resistance.
従来の技術 近年、表面弾性波を通信工学の領域に採用する試みが
急速に高まってきており、その主基板となる焦電材料の
加工上の取り扱いが問題となっている。2. Description of the Related Art In recent years, attempts to employ surface acoustic waves in the field of communication engineering have been rapidly increasing, and handling of a pyroelectric material serving as a main substrate in processing has become a problem.
従来、焦電材料上にAlあるいはAl合金のすだれ状電極
やグレーティングを形成する場合には通常のフォトエッ
チング法を用いているが線幅が狭くなる（４μｍ以下）
に従ってドライエッチングの採用が不可欠になってきて
いる。ドライエッチングの採用においては、Alあるいは
Al合金配線形成のマスクとなるレジストの耐プラズマ性
が要求される為ドライエッチング前にレジストの加熱処
理が行われている。Conventionally, when an interdigital electrode or grating of Al or Al alloy is formed on a pyroelectric material, a normal photo-etching method is used, but the line width becomes narrow (4 μm or less).
Accordingly, the use of dry etching has become indispensable. When using dry etching, Al or
Since the resist used as a mask for forming the Al alloy wiring is required to have plasma resistance, a heat treatment is performed on the resist before dry etching.
従来のレジスト加熱処理方法は、たとえば第２図に示
すようなものである、第２図において、ホットプレート
１は内部に電熱ヒータ２を内蔵している。そして、ホッ
トプレート１の上には被熱処理物である基板３が載置さ
れている。この基板３はAlあるいはAl合金の金属膜４を
焦電材料５の上に形成し、この金属膜４の上にホトレジ
ストホトレジスト６を一体的に構成したものであり、焦
電材料５をホットプレート１に当接させて配置されてい
る。そして、ホットプレート１の上に載置された基板３
を、電熱ヒータ２により加熱処理することによって、ホ
トレジストの硬化処理を行っていた。また他のホトレジ
スト硬化装置として強制熱風循環・換気方式の恒温器を
用いてN2雰囲気中で加熱処理する装置があり、現在、こ
の恒温器を用いて加熱処理する装置が、焦電材料を含む
基板上のホトレジスト硬化を行うために、多く使用され
ている。A conventional resist heating method is, for example, as shown in FIG. 2. In FIG. 2, a hot plate 1 has an electric heater 2 built therein. On the hot plate 1, a substrate 3 which is an object to be heat-treated is placed. The substrate 3 is formed by forming a metal film 4 of Al or an Al alloy on a pyroelectric material 5 and integrally forming a photoresist 6 on the metal film 4. 1 are arranged in contact with each other. Then, the substrate 3 placed on the hot plate 1
Is heated by the electric heater 2 to cure the photoresist. There is also a device for heat treatment using a thermostat forced hot air circulation and ventilation system as another photoresist curing device in an N 2 atmosphere, now, an apparatus for heat treatment using the thermostat, including pyroelectric material It is often used to cure photoresist on a substrate.
発明が解決しようとする課題 しかしながら上記のような従来の加熱処理方法では、
焦電材料の焦電効果により、焦電材料が電気的に分極さ
れ、わずかな衝撃でも割れ、破損を生じるので、加熱、
冷却時に長時間を必要とする問題と、１枚のホットプレ
ートを用いた加熱処理方法においては、焦電材料の温度
が瞬間的変化を生じるために、収縮、膨脹により割れや
すく、また、焦電効果によりホットプレートに密着する
ので搬送が難しいという問題点を有していた。本発明は
上記問題点に鑑み、焦電材料上にAlあるいはAl合金配線
を形成するためのフォトエッチング法においてAlあるい
はAl合金膜上のホトレジストをホットプレートを用いて
加熱処理する方法を提供するものである。However, in the conventional heat treatment method as described above,
Due to the pyroelectric effect of the pyroelectric material, the pyroelectric material is electrically polarized, and even if subjected to a slight impact, it breaks and breaks,
In the problem of requiring a long time for cooling and the heat treatment method using a single hot plate, the temperature of the pyroelectric material is instantaneously changed, so that the pyroelectric material is liable to crack due to shrinkage and expansion. There is a problem in that it is difficult to transport because it comes into close contact with the hot plate due to the effect. In view of the above problems, the present invention provides a method of heat-treating a photoresist on an Al or Al alloy film using a hot plate in a photoetching method for forming an Al or Al alloy wiring on a pyroelectric material. It is.
課題を解決するための手段 上記問題点を解決するために、本発明の焦電材料の加
熱処理方法は加熱しようとする材料をホットプレートを
用いた加熱処理において、温度差をつけた３個以上のホ
ットプレート上を順次移動させるとともに、両端のホッ
トプレートの温度は中央のホットプレートの温度より低
いものであり、さらには、ホットプレートと焦電材料の
吸着を防ぐためにホットプレート上に突起を設けたもの
である。Means for Solving the Problems In order to solve the above-mentioned problems, the heat treatment method for a pyroelectric material according to the present invention employs a method in which a material to be heated is subjected to heat treatment using a hot plate with three or more pieces having different temperatures. The temperature of the hot plate at both ends is lower than the temperature of the central hot plate, and a protrusion is provided on the hot plate to prevent the hot plate and the pyroelectric material from adsorbing. It is a thing.
作用 本発明の第１の発明の作用は上記した構成によって数
個の温度をつけたホットプレートを用いるため焦電材料
の瞬間的温度変化を小さくし、収縮、膨脹による割れを
なくすことができる。また本発明の第２の発明の作用は
上記したホットプレート上に突起を設けることにより、
焦電材料の瞬間的温度変化の軽減とホットプレートとの
吸着を防止することができ焦電材料の加熱処理を容易す
ることができる。Operation Since the operation of the first invention of the present invention uses a hot plate heated to several temperatures by the above-described configuration, the instantaneous temperature change of the pyroelectric material can be reduced, and cracks due to shrinkage and expansion can be eliminated. The operation of the second invention of the present invention is as follows.
The instantaneous change in temperature of the pyroelectric material can be reduced, and adsorption to the hot plate can be prevented, so that the heat treatment of the pyroelectric material can be facilitated.
実 施 例 以下本発明の一実施例の焦電材料の加熱処理方法につ
いて図面を参照しながら説明する。Embodiment Hereinafter, a method for heat treating a pyroelectric material according to an embodiment of the present invention will be described with reference to the drawings.
本発明の第１の実例例における焦電材料の加熱処理方
法を実施するレジスト加熱処理装置の構成は、従来例の
レジスト加熱処理方法装置である第２図と同様である。
本発明の第１の実施例においてはホットプレート１を５
セット用いてそれぞれの温度を70℃,140℃ 140℃,70℃
とし、各々のホットプレート間を基板３を搬送するため
の図示していない搬送期間を設けた。搬送は基板３を各
ホットプレート１（５セット）に各々30SEC〜60SEC保持
後実施した。このようにホットプレート１（５セット）
に温度差を設け、一定時間保持後搬送することにより、
焦電材料（LiTaO3）の温度の瞬間的温度変化を少なくす
ることができる。The structure of a resist heat treatment apparatus for performing the pyroelectric material heat treatment method in the first practical example of the present invention is the same as that of FIG. 2 which is a conventional resist heat treatment method apparatus.
In the first embodiment of the present invention, the hot plate 1
70 ℃, 140 ℃, 140 ℃, 70 ℃
A transfer period (not shown) for transferring the substrate 3 between the hot plates was provided. The transfer was performed after holding the substrate 3 on each hot plate 1 (5 sets) for 30 SEC to 60 SEC, respectively. Hot plate 1 (5 sets)
By setting a temperature difference and transporting after holding for a certain time,
The instantaneous temperature change of the temperature of the pyroelectric material (LiTaO 3 ) can be reduced.
以下、本発明の第２の実施例について図面を参照しな
がら説明する。第２図は、本発明の第２の実施例におけ
る焦電材料の加熱処理方法を実施するレジスト加熱処理
装置の構成を示す図である。本発明の第１の実施例と異
なるのは、ホットプレート１上に突起７を設けた点であ
る。その他のホットプレート数、ホットプレート温度は
本発明の第１の実施例と同様である。第１図に示すよう
に基板３とホットプレート１は突起７を介しているた
め、面接触することがない。そのために、基板３とホッ
トプレート１と焦電効果による吸着を防ぐことができ
る。また、突起７により基板３とホットプレート１の間
に空間ができるので焦電材料の瞬間的温度変化の軽減を
図ることができる。突起７は、φ7mm 厚さ0.1mmでホッ
トプレート１上に４ヶ所、正方形の形で設置した。Hereinafter, a second embodiment of the present invention will be described with reference to the drawings. FIG. 2 is a view showing a configuration of a resist heat treatment apparatus for performing a pyroelectric material heat treatment method according to a second embodiment of the present invention. The difference from the first embodiment of the present invention is that a projection 7 is provided on the hot plate 1. The other numbers of hot plates and hot plate temperatures are the same as in the first embodiment of the present invention. As shown in FIG. 1, the substrate 3 and the hot plate 1 do not come into surface contact with each other because of the projections 7 interposed therebetween. Therefore, the substrate 3 and the hot plate 1 can be prevented from being attracted by the pyroelectric effect. Further, since a space is formed between the substrate 3 and the hot plate 1 by the projection 7, an instantaneous temperature change of the pyroelectric material can be reduced. The protrusions 7 were set at four places on the hot plate 1 in a square shape at φ7 mm and thickness 0.1 mm.
発明の効果 以上のように本発明は、焦電材料の基板上に形成され
たレジストの加熱処理を、温度差のつけた数個のホット
プレートとホットプレート上に設けた数個の突起によっ
て焦電材料の瞬間的温度変化の軽減が図れると共に、突
起により、ホットプレートに面接触することがないため
に焦電材料とホットプレートの吸着を防ぐことができ
る。As described above, according to the present invention, the heat treatment of the resist formed on the substrate made of the pyroelectric material is performed by several hot plates having different temperatures and several projections provided on the hot plate. The instantaneous temperature change of the electric material can be reduced, and the protrusion can prevent the pyroelectric material and the hot plate from adsorbing because the surface does not come into contact with the hot plate.
第１図は本発明の一実施例に使用するレジスト加熱処理
装置の構成を示す概略図、第２図は従来のレジスト加熱
処理装置の構成を示す概略図である。 １……ホットプレート、２……電熱ヒータ、３……基
板、４……AlあるいはAl合金の金属膜、５……焦電材
料、６……ホトレジスト、７……突起。FIG. 1 is a schematic diagram showing the configuration of a resist heating apparatus used in one embodiment of the present invention, and FIG. 2 is a schematic diagram showing the configuration of a conventional resist heating apparatus. Reference numeral 1 denotes a hot plate, 2 denotes an electric heater, 3 denotes a substrate, 4 denotes a metal film of Al or an Al alloy, 5 denotes a pyroelectric material, 6 denotes a photoresist, and 7 denotes a projection.
Claims (2)
レジストパターンを形成し、これをエッチングする前
に、レジストを硬化させる為に加熱処理する方法におい
て、前記焦電材料を温度差をつけた３個以上のホットプ
レート上を順次移動させるとともに、両端のホットプレ
ートの温度は中央のホットプレートの温度より低いこと
を特徴とする焦電材料の加熱処理方法。1. A method of forming a thin film on a pyroelectric material, forming a resist pattern on the thin film, and performing a heat treatment to cure the resist before etching the resist pattern. A method for heating a pyroelectric material, comprising sequentially moving three or more hot plates with a difference, and wherein the temperatures of the hot plates at both ends are lower than the temperature of the central hot plate.
徴とする請求項１記載の焦電材料の加熱処理方法。2. The method for heat treating a pyroelectric material according to claim 1, wherein projections are provided on the hot plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63153188A JP2797321B2 (en) | 1988-06-21 | 1988-06-21 | Pyroelectric material heat treatment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63153188A JP2797321B2 (en) | 1988-06-21 | 1988-06-21 | Pyroelectric material heat treatment method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01319937A JPH01319937A (en) | 1989-12-26 |
| JP2797321B2 true JP2797321B2 (en) | 1998-09-17 |
Family
ID=15556970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63153188A Expired - Lifetime JP2797321B2 (en) | 1988-06-21 | 1988-06-21 | Pyroelectric material heat treatment method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2797321B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100431658B1 (en) * | 2001-10-05 | 2004-05-17 | 삼성전자주식회사 | Apparatus for heating a substrate and apparatus having the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6285911A (en) * | 1985-09-24 | 1987-04-20 | ス−パ−ウエイブ テクノロジ− インコ−ポレ−テツド | Conveyor type heater for curing treatment after molding |
| JPS6331118A (en) * | 1986-07-25 | 1988-02-09 | Oki Electric Ind Co Ltd | Baking furnace |
-
1988
- 1988-06-21 JP JP63153188A patent/JP2797321B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01319937A (en) | 1989-12-26 |
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