JPS5863134A - Resist hardening process and device - Google Patents

Resist hardening process and device

Info

Publication number
JPS5863134A
JPS5863134A JP16100281A JP16100281A JPS5863134A JP S5863134 A JPS5863134 A JP S5863134A JP 16100281 A JP16100281 A JP 16100281A JP 16100281 A JP16100281 A JP 16100281A JP S5863134 A JPS5863134 A JP S5863134A
Authority
JP
Japan
Prior art keywords
resist
wafer
pallet
heat
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16100281A
Other languages
Japanese (ja)
Inventor
Hiroshi Ii
伊井 宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16100281A priority Critical patent/JPS5863134A/en
Publication of JPS5863134A publication Critical patent/JPS5863134A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To provide the resist hardening process and device improving the yield of surface elastic wave filter etc. by a method wherein the substrate of surface elastic wave filter etc. is heated by means of radiant heat both from the resist coated side of wafer and the opposite side. CONSTITUTION:The part of pallet 2 not covered with wafer 3 loaded on the pallet 2 is heated by radient heat from heat source 1 increasing the temperature thereof. At this time the temperature of the central part of pallet 2 covered with said wafer 3 is also increased by the thermal diffusion due to thermal conduction inside pallet 2. Consequently the under side of wafer 3 is heated heating the contact surface between wafer 3 and resist 4 coated on the wafer 3 i.e. the under side of resist 4. Therefore the evaporation of solvent from under side of resist 4 may be accelerated until the thermosetting film is formed on the surface of said resist 4.

Description

【発明の詳細な説明】 本発明は、表面弾性波フィルタ等の基板となるウェハー
上に、前記フィルタ尋のパターンを形成する工程におい
て、レジス)f塗布した後の前記レジストの硬化法及び
それに使用される装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for curing the resist after coating the resist in the step of forming the filter pattern on a wafer serving as a substrate for a surface acoustic wave filter, etc., and its use therein. related to the equipment used.

表面弾性波フィルタは、工〈知られている↓うに、ニオ
ブ酸リチウム等の単結晶ウエノ・−上に、アルミ蒸着、
レジスト塗布硬化、露光、現像、レジスト硬化及びエツ
チング等の工程を経て、所望のパターンを形成すること
によシ作成される。上記工程のうち、レジストa布硬化
及びレジスト硬化の工程では、恒温槽あるいはトンネル
炉を使用して、前記レジストを熱硬化させている。
Surface acoustic wave filters are made by depositing aluminum on top of a single crystal urethane such as lithium niobate.
It is created by forming a desired pattern through processes such as resist coating and curing, exposure, development, resist curing, and etching. Among the above steps, in the resist a cloth curing and resist curing steps, the resist is thermally hardened using a constant temperature bath or a tunnel furnace.

このレジスト熱硬化の工程での硬化の度合は、露光、現
像、エツチングの工程によって、前記表面弾性波フィル
タとしてのアルミパターンが形成されるに当って、前記
アルミパターンの線の幅及び断面形状を左右する要素と
なる。言い換えれば、レジストの熱硬化の度合にニジ、
表直弾性波フィルタの電気的特性は、影響を及ぼされる
The degree of curing in this resist thermosetting process is determined by controlling the line width and cross-sectional shape of the aluminum pattern when the aluminum pattern as the surface acoustic wave filter is formed through the exposure, development, and etching processes. It becomes a influencing factor. In other words, depending on the degree of heat curing of the resist,
The electrical characteristics of the direct acoustic wave filter are influenced.

レジストの熱硬化に使用される前記装置のうち、トンネ
ル炉は、恒温槽に比べて作業を自動化するのにすぐれた
装置であることは、一般によく知られている。
It is generally well known that among the above-mentioned devices used for thermal curing of resist, a tunnel furnace is an excellent device for automating the work compared to a constant temperature bath.

しかしながら、トンネル炉のうち、ウェハーの上部に赤
外線ヒーター叫の熱源を置き、前記熱源から輻射熱によ
シレジストを硬化させる方式のトンネル炉に於ては、前
記レジストの表面から硬化が進行することになる。
However, in tunnel furnaces in which a heat source such as an infrared heater is placed above the wafer and the resist is cured by radiant heat from the heat source, curing proceeds from the surface of the resist. .

その為に、レジスト下部の溶媒が蒸発する前に、レジス
ト硬化膜がその表面に形成され、前記溶媒の蒸発を阻止
することがある。その結果、ウェハーと接触しているレ
ジスト下部付近の硬化が十分に行なわれず、この為に、
前記レジストとウェハーの接着強度が十分でないことが
ある。
Therefore, before the solvent under the resist evaporates, a resist cured film is sometimes formed on the surface of the resist, thereby preventing the evaporation of the solvent. As a result, the area near the bottom of the resist that is in contact with the wafer is not sufficiently cured.
The adhesive strength between the resist and the wafer may not be sufficient.

したがって従来は、例えばエツチング工程に於て、過度
のエツチングがなされ、その結果、所望のアルミ線幅及
び断面形状を得ることが出来なくなり、表面弾性波フィ
ルタ等の歩留まりが悪くなるという欠点があった。
Therefore, in the past, for example, in the etching process, excessive etching was performed, and as a result, the desired aluminum line width and cross-sectional shape could not be obtained, resulting in poor yields of surface acoustic wave filters, etc. .

本発明の目的は、上記した従来技術の欠点をなくし、表
面弾性波フィルタ等の歩留まシを向上させろレジスト硬
化法及びその装置を提供するにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a resist curing method and an apparatus therefor that eliminate the drawbacks of the prior art described above and improve the yield of surface acoustic wave filters and the like.

本発明の第1の要点は、レジスト下部付近させ、ウェハ
ーとレジストとの接着強度を強度させるのに、ウェハー
のレジスト塗布側からの輻射熱による加熱と共に、前記
ウェハーのレジスト塗布側と反対側からも加熱全行なう
こととした点にある。
The first point of the present invention is that in order to increase the adhesive strength between the wafer and the resist by heating the resist near the bottom, in addition to heating by radiant heat from the resist-coated side of the wafer, heat is also applied from the opposite side of the wafer to the resist-coated side. The point is that we decided to do all the heating.

本発明の閉2の要点は、前記第1の要点で述べた、ウェ
ハーのレジスト塗布側の反対側がら加熱する装置が、前
記ウェハーの下部に熱伝導のよいパレットを敷き、前記
パレットを通して・1: ウェハー下部から加熱を行なうこととした点にある。
The second point of the present invention is that, as mentioned in the first point, the device that heats the wafer from the side opposite to the resist-coated side places a pallet with good heat conductivity under the wafer, and heats the wafer by passing the heat through the pallet. : The reason is that heating is performed from the bottom of the wafer.

以下、不発明を図面に工り詳細に説明する。Hereinafter, the invention will be explained in detail with reference to the drawings.

、 6 。, 6.

第1図は不発明のレジスト硬化装置の一実施例を示す概
略側面図、第2図は第1図の■−■線から見た平面図で
ある。
FIG. 1 is a schematic side view showing an embodiment of the resist curing device of the invention, and FIG. 2 is a plan view taken along line 1--2 in FIG.

これらの1に於て、1は赤外線ヒーター等の熱源、2は
前記熱源1からの輻射熱の吸収が多くなる様に、その表
面を黒色に処理したアルミ製パレット、3は前記パレッ
ト2上に置かれたウェハー、4は前記ウェハー3上に塗
布されたレジスト、5は前記パレット2及びその上に置
かれたウェハー3を搬送する為のプーリーベルトである
In these 1, 1 is a heat source such as an infrared heater, 2 is an aluminum pallet whose surface is treated black so as to absorb more radiant heat from the heat source 1, and 3 is placed on the pallet 2. 4 is a resist coated on the wafer 3, and 5 is a pulley belt for conveying the pallet 2 and the wafer 3 placed thereon.

第1,2図から明らかなように、本発明に係る装置では
熱源1の下部に設(1されているプーリーベルト5の上
に、ウェハー3の表面積ニジ広いパレット2を乗せ、そ
の」二にウェハー6を搭載する構成とした。
As is clear from FIGS. 1 and 2, in the apparatus according to the present invention, a pallet 2 with a wide surface area for wafers 3 is placed on a pulley belt 5 installed below a heat source 1. The configuration was such that a wafer 6 was mounted.

上記のような構成としたことにより、前記パレット2の
上に搭載されているウェハー3で蔽われていないパレッ
ト20部分には、熱源1が・  らの輻射熱が当たり、
その部分の温度が上昇す、 4 。
With the above configuration, the portion of the pallet 20 that is not covered by the wafer 3 mounted on the pallet 2 is exposed to radiant heat from the heat source 1.
The temperature in that area increases, 4.

る。それに応じて、前記パレット2の内部では熱伝導に
よる熱拡散が行なわれるために、前記ウェー・−3で蔽
われたパレット2の中央部も温度が上昇する。
Ru. Correspondingly, since heat diffusion by heat conduction takes place inside the pallet 2, the temperature also rises in the central portion of the pallet 2 covered by the way -3.

その結果、前記ウェハー5もその下面から加熱されるこ
ととなシ、前記ウェハー6と、その上に塗布されたレジ
スト4との接触面、すなわち、レジスト4の下部も加熱
される。その為へレジスト4の表面に熱硬化膜が形成さ
れるまでの間は、前記レジスト4の下部からの溶媒の蒸
発が促進される。
As a result, the wafer 5 is also heated from its lower surface, and the contact surface between the wafer 6 and the resist 4 coated thereon, that is, the lower part of the resist 4 is also heated. Therefore, until a thermosetting film is formed on the surface of the resist 4, evaporation of the solvent from the lower part of the resist 4 is promoted.

以上の説明から明らかなように、不発明の方法及び装置
に工れば、レジスト4の下部に於ける硬化が従来ニジも
極めてよく行なわれ、ウェハーとレジストとの接着強度
が強化される。その結果、例えばエツチング工程でのア
ルミパターンの形成時において、所望の線幅及び断面形
状を得ることがほぼ確実に出来る等表面弾性波フィルタ
等の製造工程に於ける歩留まシを向上させる効果かある
As is clear from the above description, if the method and apparatus of the invention are used, the lower part of the resist 4 can be cured extremely well compared to the conventional method, and the adhesive strength between the wafer and the resist can be strengthened. As a result, for example, when forming an aluminum pattern in the etching process, it is almost certain to obtain the desired line width and cross-sectional shape.This has the effect of improving the yield in the manufacturing process of isosurface acoustic wave filters, etc. There is.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明のレジスト硬化装置の一実施例を示す概
略側面図、第2図は第1図の■−■線から見た平面図で
ある。 1・・・熱源 2・・・パレット 6・・・ウェハー 4・・・レジスト 5・・・プーリーベルト 代理人弁理士 薄 出 オU 室 ・  7・ 特開昭511−631:(4(3) 第1n 第2囚
FIG. 1 is a schematic side view showing one embodiment of the resist curing apparatus of the present invention, and FIG. 2 is a plan view taken along line 1--2 in FIG. 1...Heat source 2...Pallet 6...Wafer 4...Resist 5...Pulley belt Representative Patent Attorney Office 7. JP-A-511-631: (4(3) 1st n 2nd prisoner

Claims (1)

【特許請求の範囲】 (11ウェハーの表面上に塗布されているレジストを前
記レジストの表面側からの輻射熱によって熱硬化させる
レジスト硬化法において、レジストが塗布されている前
記表面とは反対側のウェハー裏面を加熱することによシ
、その熱伝導に工って、前記レジストヲ、その内部から
も加熱して、熱硬化させることを特徴とするレジスト硬
化法。 (2)  その表面にレジストが塗布されているウェハ
ーを、その表面側から照射し、その輻射熱によって前記
レジスト硬化面から熱硬化させる熱源を有するレジスト
硬化装置において、前記ウェー・−ヲ搭載するための熱
吸収性、熱伝導性のパレットヲ設け、前記パレットの表
面&’を前記ウェハーの表面積よシ広くしたことを特徴
とするレジスト硬化装置。
Scope of Claims (11) In a resist curing method in which a resist coated on the surface of a wafer is thermally cured by radiant heat from the surface side of the resist, the wafer on the opposite side to the surface coated with the resist A resist curing method characterized in that by heating the back surface, the resist is also heated from the inside and thermally cured by modifying the heat conduction. (2) The resist is applied to the surface of the resist. In a resist curing apparatus having a heat source that irradiates a wafer with heat from its front side and thermally cures the resist from the hardened surface using the radiant heat, a heat absorbing and thermally conductive pallet is provided for mounting the wafer. . A resist curing apparatus, characterized in that the surface &' of the pallet is wider than the surface area of the wafer.
JP16100281A 1981-10-12 1981-10-12 Resist hardening process and device Pending JPS5863134A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16100281A JPS5863134A (en) 1981-10-12 1981-10-12 Resist hardening process and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16100281A JPS5863134A (en) 1981-10-12 1981-10-12 Resist hardening process and device

Publications (1)

Publication Number Publication Date
JPS5863134A true JPS5863134A (en) 1983-04-14

Family

ID=15726702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16100281A Pending JPS5863134A (en) 1981-10-12 1981-10-12 Resist hardening process and device

Country Status (1)

Country Link
JP (1) JPS5863134A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043655A (en) * 1983-08-22 1985-03-08 Toshiba Corp Formation of resist pattern

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043655A (en) * 1983-08-22 1985-03-08 Toshiba Corp Formation of resist pattern
JPH0572579B2 (en) * 1983-08-22 1993-10-12 Tokyo Shibaura Electric Co

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