JPS60100435A - Selective hardening method of applied liquid insulating material of semiconductor substrate - Google Patents

Abstract

PURPOSE:To simplify the treating process, wherein a liquid insulating material applied on the surface of a substrate is made to selectively harden, and to shorten the treating time by a method wherein a part only of the liquid insulating material applied, which is wanted to made to cure, is irradiated with radiation rays, and the liquid insulating material of the part is made to selectively cure. CONSTITUTION:A liquid glass 2 is applied on the surface of a semiconductor substrate 1 such as a semiconductor wafer. Following that, a part of the liquid glass 2 applied, which is wanted to make to cure, is irradiated with radiation rays 3 such as electron beams, ion beams or laser beams, etc., and the liquid glass 2 of the part is made to selectively cure. After that, a cleaning treatment is performed using an organic solvent, etc., and the liquid glass 2 of parts, which were not irradiated with the radiation rays 3 and were not made to cure, is removed. By this way, a glass insulating coated film 4, which was irradiated with the radiation rays 3 and has been made to cure, remains on the semiconductor substrate 1.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for selectively curing a liquid insulating material, such as liquid glass, coated on the surface of a semiconductor substrate such as a semiconductor wafer.

[Prior art]

The application of liquid insulating materials, such as liquid glass, to semiconductor substrates such as semiconductor wafers is due to Δtotalization of the element surface, and
It is often used as an insulator for separating elements.

In any of these cases, the semiconductor substrate coated with liquid glass is cured by heating the liquid glass on the surface at a relatively high temperature. A case will be described in which glass is hardened and an insulating layer is formed between elements. The liquid glass applied to the surface of the semiconductor substrate is heated and hardened at a relatively high temperature as described above. Thereafter, in order to leave only the portions necessary for separating the elements, a photolithography process and an etching process for removing unnecessary portions of the hardened glass film are performed to form isolation regions between the elements.

As another example of the conventional curing method, when performing multilayer wiring and flattening the surface of the element, it is necessary to remove the connection parts of the element under the hardened glass film.
A photolithography process and an etching process were performed to remove the glass film in that area.

The conventional method described above requires a high-temperature heat curing process and a photolithography process and an etching process to selectively etch the hardened glass film, resulting in a large number of processing steps. Ta. Furthermore, depending on the capabilities of photolithography and etching techniques, there are drawbacks such as the inability to form fine patterns.

[Summary of the invention]

This invention was made in order to eliminate the drawbacks of the above-mentioned conventional methods.The liquid insulating material coated on the surface of a semiconductor substrate is irradiated with radiation only in the portions to be cured, thereby selectively curing the liquid insulating material. It is an object of the present invention to provide a method for selectively curing a liquid insulating material applied to a semiconductor substrate, in which the processing steps are shortened, the processing time is shortened, and the productivity is improved. A method for selectively curing a coated liquid insulator according to an embodiment of the present invention will be explained with reference to the drawings. First, as shown in Fig. 1, on the surface of a semiconductor substrate such as a semiconductor wafer, as shown in Fig. 2, an electron beam, an ion beam, or a laser beam is applied to the part of the applied liquid glass (2) to be cured. The liquid glass (2) is selectively cured by one ray of irradiation (3). After this, it is cleaned with an organic solvent and cured without being irradiated with the irradiation (3). Remove the remaining liquid glass (2).As shown in Figure 3, the semiconductor substrate (1) is removed.
A glass insulation coating (4) remains which has been irradiated with radiation (3) and hardened.

In the above embodiments, liquid glass was used as the liquid insulating material to be applied, but any other material may be used as long as it forms an insulating film by applying and curing with heat.

〔Effect of the invention〕

According to the method of the present invention, the liquid insulating material applied to the surface of the semiconductor substrate is selectively cured by irradiating the liquid insulating material with radiation only on the portions to be cured, which simplifies the processing process. Processing time is shortened and productivity is greatly improved. Further, by adjusting the degree of convergence of the irradiation beam, it is possible to form patterns ranging from large to fine patterns, and there is an effect that highly accurate patterns can be easily obtained in a short time.

[Brief explanation of drawings]

1 to 3 are cross-sectional views of essential parts of a semiconductor substrate showing, in order of steps, a method for selectively curing a liquid insulating material applied to a semiconductor substrate according to an embodiment of the present invention.01...semiconductor substrate;
2...Liquid glass, 3...Irradiation rays, 4...Glass insulation coating Note that the same reference numerals in the drawings indicate the same or corresponding parts. Agent Masuo Oiwa Figure 1 Figure 2; Figure 3 procedural amendment (voluntary) 5942! ') Zhao Kakou Year Month - Day, -2 Dear Commissioner of the Japan Patent Office 1, Indication of the case Patent application 1987-20 '/'711
No. 2, Name of the invention Selective curing method for liquid insulating material applied to semiconductor substrates 3. Person making the amendment 5. Paulownia in the "Detailed Description of the Invention" in the AL to which the amendment is being made. 6. In the 3rd line of the 4th page of the detailed statement of amendment, change "by irradiation" to "by irradiation"
Correct to. that's all

Claims (6)

[Claims] (1) A method for selectively curing a liquid insulating material applied to a semiconductor substrate, in which a liquid insulating material is applied to the surface of a semiconductor substrate, and required portions of the applied liquid insulating material are irradiated with radiation to cure the applied liquid insulating material. (2) A method for selectively curing a liquid insulating material applied to a semiconductor substrate according to claim 1, wherein the semiconductor substrate is a semiconductor wafer. (3) A method for selectively curing a liquid insulating material applied to a semiconductor substrate according to claim 1 or 2, wherein the liquid insulating material is made of liquid glass. (4) A method for selectively curing a liquid insulating material applied to a semiconductor substrate according to any one of claims 1 to 3, wherein the irradiation beam is an electron beam. (5) A method for selectively curing a liquid insulating material applied to a semiconductor substrate according to any one of claims 1 to 3, wherein the irradiation beam is an ion beam. (6) A method for selectively curing a liquid insulating material applied to a semiconductor substrate according to any one of claims 1 to 3, wherein the irradiation beam is a laser beam.