JPH0131705B2 - - Google Patents

Info

Publication number
JPH0131705B2
JPH0131705B2 JP58144789A JP14478983A JPH0131705B2 JP H0131705 B2 JPH0131705 B2 JP H0131705B2 JP 58144789 A JP58144789 A JP 58144789A JP 14478983 A JP14478983 A JP 14478983A JP H0131705 B2 JPH0131705 B2 JP H0131705B2
Authority
JP
Japan
Prior art keywords
gate
transistors
region
mos
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58144789A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6037158A (ja
Inventor
Junichi Oomori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON DENKI AISHII MAIKON SHISUTEMU KK
Original Assignee
NIPPON DENKI AISHII MAIKON SHISUTEMU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON DENKI AISHII MAIKON SHISUTEMU KK filed Critical NIPPON DENKI AISHII MAIKON SHISUTEMU KK
Priority to JP58144789A priority Critical patent/JPS6037158A/ja
Publication of JPS6037158A publication Critical patent/JPS6037158A/ja
Publication of JPH0131705B2 publication Critical patent/JPH0131705B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58144789A 1983-08-08 1983-08-08 Ｍｏｓ型集積回路 Granted JPS6037158A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58144789A JPS6037158A (ja) 1983-08-08 1983-08-08 Ｍｏｓ型集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58144789A JPS6037158A (ja) 1983-08-08 1983-08-08 Ｍｏｓ型集積回路

Publications (2)

Publication Number Publication Date
JPS6037158A JPS6037158A (ja) 1985-02-26
JPH0131705B2 true JPH0131705B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-06-27

Family

ID=15370483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58144789A Granted JPS6037158A (ja) 1983-08-08 1983-08-08 Ｍｏｓ型集積回路

Country Status (1)

Country Link
JP (1) JPS6037158A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6197861U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1984-12-03 1986-06-23
JPH05175497A (ja) * 1991-12-25 1993-07-13 Nec Corp 半導体トランジスタチップ
US6598214B2 (en) * 2000-12-21 2003-07-22 Texas Instruments Incorporated Design method and system for providing transistors with varying active region lengths

Also Published As

Publication number Publication date
JPS6037158A (ja) 1985-02-26

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