JPH0130295B2 - - Google Patents

Info

Publication number
JPH0130295B2
JPH0130295B2 JP56117638A JP11763881A JPH0130295B2 JP H0130295 B2 JPH0130295 B2 JP H0130295B2 JP 56117638 A JP56117638 A JP 56117638A JP 11763881 A JP11763881 A JP 11763881A JP H0130295 B2 JPH0130295 B2 JP H0130295B2
Authority
JP
Japan
Prior art keywords
glass
silicon oxide
film
oxide film
zno
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56117638A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5821336A (ja
Inventor
Shigeru Honjo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56117638A priority Critical patent/JPS5821336A/ja
Publication of JPS5821336A publication Critical patent/JPS5821336A/ja
Publication of JPH0130295B2 publication Critical patent/JPH0130295B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/283—

Landscapes

  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
JP56117638A 1981-07-29 1981-07-29 半導体素子の製造方法 Granted JPS5821336A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56117638A JPS5821336A (ja) 1981-07-29 1981-07-29 半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56117638A JPS5821336A (ja) 1981-07-29 1981-07-29 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS5821336A JPS5821336A (ja) 1983-02-08
JPH0130295B2 true JPH0130295B2 (en:Method) 1989-06-19

Family

ID=14716649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56117638A Granted JPS5821336A (ja) 1981-07-29 1981-07-29 半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS5821336A (en:Method)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2633865B2 (ja) * 1987-10-02 1997-07-23 株式会社日立製作所 トラッキング方法
KR100626382B1 (ko) * 2004-08-03 2006-09-20 삼성전자주식회사 식각 용액 및 이를 이용한 자기 기억 소자의 형성 방법
JP4816250B2 (ja) * 2006-05-25 2011-11-16 三菱瓦斯化学株式会社 エッチング液組成物及びエッチング方法
JP2008159814A (ja) * 2006-12-22 2008-07-10 Mitsui Mining & Smelting Co Ltd 酸化亜鉛系薄膜用エッチャント及び酸化亜鉛系薄膜のパターニング方法

Also Published As

Publication number Publication date
JPS5821336A (ja) 1983-02-08

Similar Documents

Publication Publication Date Title
JPH0130295B2 (en:Method)
JPS5445570A (en) Manufacture for semiconductor element
JPS5932895B2 (ja) 半導体装置およびその製造方法
GB1228083A (en:Method)
JP2000232090A5 (en:Method)
JP2000232090A (ja) ガラスパッシベーション膜の除去方法
JPS6159678B2 (en:Method)
JPS6156617B2 (en:Method)
JPH079930B2 (ja) 半導体装置の製造方法
JPH0228252B2 (en:Method)
JPS6142144A (ja) 半導体装置の製造方法
JPH01108726A (ja) 半導体装置の製造方法
JPS58177B2 (ja) 半導体装置の製造法
JPS5944832A (ja) 半導体装置の製造方法
JPS61141157A (ja) 半導体素子の製造方法
KR810001161B1 (ko) 경사진 단면을 갖도록 실리콘 산화물을 식각시키는 방법
JPS595631A (ja) メサ型半導体装置及びその製造方法
JPS58192338A (ja) 半導体装置及びその製造方法
JPS60218848A (ja) 結晶基板のエツチング法
JPH04106927A (ja) 半導体装置の製造方法
JPS596546A (ja) 絶縁膜のエツチング方法
JPS63257229A (ja) 半導体装置の製造方法
JPS6118869B2 (en:Method)
JPS62249425A (ja) 半導体装置
JPS63312645A (ja) 半導体装置の製造方法