JPH01292220A - 半導体光検出装置 - Google Patents
半導体光検出装置Info
- Publication number
- JPH01292220A JPH01292220A JP63122549A JP12254988A JPH01292220A JP H01292220 A JPH01292220 A JP H01292220A JP 63122549 A JP63122549 A JP 63122549A JP 12254988 A JP12254988 A JP 12254988A JP H01292220 A JPH01292220 A JP H01292220A
- Authority
- JP
- Japan
- Prior art keywords
- light
- conductivity type
- semiconductor
- forming
- receiving section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 98
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 230000035945 sensitivity Effects 0.000 claims abstract description 42
- 239000012535 impurity Substances 0.000 claims abstract description 28
- 238000012545 processing Methods 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 238000000825 ultraviolet detection Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 17
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 239000000969 carrier Substances 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 15
- 238000010586 diagram Methods 0.000 description 16
- 230000007547 defect Effects 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 10
- 230000003595 spectral effect Effects 0.000 description 10
- 238000001228 spectrum Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 102100040678 Programmed cell death protein 1 Human genes 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 208000028659 discharge Diseases 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101710089372 Programmed cell death protein 1 Proteins 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63122549A JPH01292220A (ja) | 1988-05-19 | 1988-05-19 | 半導体光検出装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63122549A JPH01292220A (ja) | 1988-05-19 | 1988-05-19 | 半導体光検出装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01292220A true JPH01292220A (ja) | 1989-11-24 |
| JPH0517492B2 JPH0517492B2 (enExample) | 1993-03-09 |
Family
ID=14838627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63122549A Granted JPH01292220A (ja) | 1988-05-19 | 1988-05-19 | 半導体光検出装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01292220A (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007134457A (ja) * | 2005-11-09 | 2007-05-31 | Hamamatsu Photonics Kk | 光検出器 |
| JP2009074855A (ja) * | 2007-09-19 | 2009-04-09 | Oki Semiconductor Co Ltd | 光検出装置 |
| EP2075844A3 (en) * | 2007-12-25 | 2009-08-19 | Seiko Instruments Inc. | Photodetection semiconductor device, photodetector, and image display device |
| JP2009206174A (ja) * | 2008-02-26 | 2009-09-10 | Hamamatsu Photonics Kk | 半導体光検出装置 |
| EP2075854A3 (en) * | 2007-12-25 | 2011-11-02 | Seiko Instruments Inc. | Photodetection semiconductor device, photodetector, and image display device |
| WO2015151651A1 (ja) * | 2014-04-04 | 2015-10-08 | シャープ株式会社 | 受光器及び携帯型電子機器 |
| WO2017051749A1 (ja) * | 2015-09-25 | 2017-03-30 | 株式会社ブイ・テクノロジー | 放射線画像撮影装置 |
-
1988
- 1988-05-19 JP JP63122549A patent/JPH01292220A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007134457A (ja) * | 2005-11-09 | 2007-05-31 | Hamamatsu Photonics Kk | 光検出器 |
| JP2009074855A (ja) * | 2007-09-19 | 2009-04-09 | Oki Semiconductor Co Ltd | 光検出装置 |
| EP2075844A3 (en) * | 2007-12-25 | 2009-08-19 | Seiko Instruments Inc. | Photodetection semiconductor device, photodetector, and image display device |
| EP2075854A3 (en) * | 2007-12-25 | 2011-11-02 | Seiko Instruments Inc. | Photodetection semiconductor device, photodetector, and image display device |
| JP2009206174A (ja) * | 2008-02-26 | 2009-09-10 | Hamamatsu Photonics Kk | 半導体光検出装置 |
| WO2015151651A1 (ja) * | 2014-04-04 | 2015-10-08 | シャープ株式会社 | 受光器及び携帯型電子機器 |
| WO2017051749A1 (ja) * | 2015-09-25 | 2017-03-30 | 株式会社ブイ・テクノロジー | 放射線画像撮影装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0517492B2 (enExample) | 1993-03-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313532 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |