JPH01273404A - High frequency semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a characteristic as the design regardless of the mount position of the device and to simplify the design of a high frequency circuit board by providing a matching circuit to input and output lead electrodes. CONSTITUTION:A package main body 1 made of an alumina ceramics, etc., and a package cap 2 made of an alumina ceramics or a metallic plate are provided and an open stub for input/output matching is fitted to a gate electrode lead 10 and a drain electrode lead 11 of a GaAs FET to match the input impedance and the output impedance of a GaAs field effect transistor(FET) and the power impedance and the load impedance. Thus, the input/output matching circuit as design is formed to a position where the GaAs FET is mounted on the board, then the dispersion in the characteristic due to the dispersion in the assembly position is not caused.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Utilization Public Funds] The present invention relates to input/output matching of high frequency semiconductor devices operating at high frequencies.

[Conventional technology]

FIGS. 4(a) and 4(b) are a front view and a side view of a conventional high-frequency semiconductor device. In the figure, (1) is a package body made of alumina ceramics, etc.;
) is a package cap made of alumina ceramics or a metal plate, (3) to (5) are electrode leads of a semiconductor device made of a metal plate plated with gold, etc.
(3) is a source electrode lead, (4) is a gate electrode lead, and (5) is a drain electrode lead.

The gallium arsenide field effect transistor (hereinafter referred to as GaAsFET) used in the high frequency band shown in FIG.

), in order to match the input impedance and output impedance of the GaAs FET with the power source impedance and load impedance, the GaAs FET is soldered to the amplifier printed circuit board shown in Figure 5 on which a matching circuit pattern has been formed. ing.

In Fig. 5, (6) is a dielectric substrate with low dielectric loss such as Teflon, and (7) to (9) are made by etching 11r4wA attached to the dielectric substrate (6) by thermocompression etc. (7) is the input matching circuit pattern, (8) is the output matching circuit pattern, and (9) is the high frequency amplifier circuit pattern.
) is the source electrode grounding pattern. Note that the source ground pattern is electrically connected to the copper thin film attached to the entire back surface of the dielectric substrate (6) via a through hole. 6th
The figure shows a GaAs FET with a GaAs FET soldered to a dielectric substrate on which the amplifier circuit pattern shown in Fig. 5 is formed.
This figure shows the outline of the ET high-frequency amplifier.

In the high frequency amplifier shown in Fig. 6, the input matching circuit pattern composed of an open stub is connected to the gate electrode lead (4) of the GaAs FET.
The input signal power entering the gate of the ET has no loss due to reflection, and all power is amplified by the GaAs FET. On the other hand, since the drain electrode (5) is connected to the output matching circuit pattern, the output signal power amplified by the GaAs FET and output from the drain is not lost due to reflection, and all the power is output to the external load. In other words, G
The input/output matching circuit pattern is connected to the aAs FET.
Therefore, the signal power is efficiently amplified.

[Problem to be solved by the invention]

However, since the conventional GaAs FET amplifier was constructed by soldering the GaAs FET to a dielectric substrate on which the input/output matching circuit pattern was formed as described above, there were the following problems.

(The matching frequency of the 11G a As FET amplifier is mainly determined by the distance gia 1 and 1 between the GaAs FET and the open stubs of the input matching circuit and output matching circuit, but at high frequencies, a slight distance deviation The matching frequency will shift. For example, in the case of a GaAs FET with a gate width of 300 μm, if the matching frequency is 12 GHz, a shift of 0.1 mm will cause a shift of 500 μm.
The frequency shifts by about MHz.

However, when soldering a GaAs FET to a matching circuit pattern on a dielectric substrate, it is difficult to assemble it at a precisely determined position, and the matching frequency shifts due to positional deviation of the assembly.

(2) In the case of GaAs FETs that operate at high frequencies, the high-rise and wave parameters (eg, S-parameters) differ due to differences in structural parameters and manufacturing flow.

Therefore, when FETs with different model names are used, it is necessary to prepare a dielectric substrate of an amplifier circuit having an input/output matching circuit pattern designed for each FET to be used, which is very complicated.

This invention was made in order to solve the above-mentioned problems, and aims to provide a high-frequency semiconductor device that can obtain the designed characteristics regardless of the mounting position of the device and that can easily design a high-frequency circuit board. purpose.

[Means to solve the problem]

The microwave semiconductor device according to the present invention is made of GaAs.
Open stubs for input/output matching are attached to the gate electrode lead and drain electrode lead of the FET.

[Effect]

In the GaAs FET of the present invention, a matching circuit is attached to the input/output electrode leads, so there is no shift in matching frequency depending on the assembly position, and there is no need for the user to design a matching circuit.

〔Example〕

The invention will now be explained with reference to the drawings. Figure 1(a)
, (b) are a front view and a side view showing a high frequency semiconductor device according to an embodiment of the present invention. In the figure,
(10) is a gate electrode lead with an open stub;
(11) is a drain electrode lead with an open stub.

The configuration of a high frequency band amplifier using the GaAs FET of this invention is as shown in FIG.
2) and the patterned dielectric substrate (6) of the 50Ω output line (13), by soldering the GaAsFET of the present invention. FIG. 3 is an outline diagram of the high-frequency semiconductor device of this invention, so to speak, an amplifier used.
Since the input matching circuit is attached to the input electrode side of the FET and the output matching circuit is attached to the output electrode side, there is no reflection of signal power and efficient amplification characteristics can be obtained.

However, in the GaAs FET of the present invention, the input/output matching circuit is attached to the gate electrode lead and drain electrode lead of the main body of the GaAs FET, so the conventional G
Compared to the case of using aAs FETs, (1) the input/output matching circuit can be configured as designed regardless of the position where the GaAs FET is mounted on the dielectric substrate, so there are no variations in characteristics due to variations in assembly position; It disappears.

(2) Even when assembling different types of GaAs FETs, since the GaAs FET itself is equipped with a matching circuit, only one type of dielectric substrate with patterned input and output strip lines of 50Ω is required to handle high frequencies. Amplifiers can be configured.

There is an advantage.

In the above embodiment, a matching circuit is provided at the gate electrode and drain electrode of a GaAs FET, but a matching circuit may be provided at the input/output electrode of another high frequency semiconductor device such as a silicon bipolar transistor.

Furthermore, although the above embodiments have been described with respect to the case of a high frequency amplifier circuit, the same effects as those of the above embodiments can be achieved even when the high frequency circuit is an oscillation circuit.

〔Effect of the invention〕

As described above, according to the present invention, matching circuits are provided on the input and output side lead electrodes of a high-frequency semiconductor device, so that designed characteristics can be obtained regardless of the mounting position of the device, and the high-frequency circuit board This has the effect of greatly simplifying the design.

[Brief explanation of the drawing]

1(a) and (b) are front and side views showing a high frequency semiconductor device according to an embodiment of the present invention, and FIGS. 2 and 3 are printed circuit boards of an amplifier using the high frequency semiconductor device of the present invention. Outline drawing and amplifier outline drawing, Figure 4 (a
) and (b) are a front view and a side view showing a conventional high frequency semiconductor device, and FIGS. 5 and 6 are a printed circuit board outline diagram and an amplifier using the conventional high frequency semiconductor device. (1) is the package body, (2) is the cap, (3) is the source flsIi lead, (4) is the gate electrode lead,
(5) is the drain electrode lead, (6) is the dielectric substrate, (
7) is the input matching circuit pattern, (8) is the output matching circuit pattern, (9) is the source electrode grounding pattern, (10) is the gate electrode lead with an open stub, and (11) is the drain electrode with an open stub. It is the lead. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

[Claims] A high-frequency semiconductor device characterized in that an input matching circuit is provided on an electrode lead on the input side, and an output matching circuit is provided on an electrode lead on the output side.