JPH07235740A - Grounding circuit for high-frequency active element - Google Patents

Grounding circuit for high-frequency active element

Info

Publication number
JPH07235740A
JPH07235740A JP6025710A JP2571094A JPH07235740A JP H07235740 A JPH07235740 A JP H07235740A JP 6025710 A JP6025710 A JP 6025710A JP 2571094 A JP2571094 A JP 2571094A JP H07235740 A JPH07235740 A JP H07235740A
Authority
JP
Japan
Prior art keywords
transistor
frequency
active element
frequency active
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6025710A
Other languages
Japanese (ja)
Inventor
Yuichi Ichikawa
裕一 市川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP6025710A priority Critical patent/JPH07235740A/en
Publication of JPH07235740A publication Critical patent/JPH07235740A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0237High frequency adaptations
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components

Abstract

PURPOSE:To provide a circuit for grounding high-frequency active elements perfectly. CONSTITUTION:The emitter E of a transistor 11 mounted on an electronic circuit board and operated by a high-frequency signal is grounded by connecting it through a through hole to a shield conductor formed on the rear of the board, and is also connected to one end of an open stub 15 of a length of 1/4lambda with respect to the operating frequency of the transistor 11. By doing this way, the voltage amplitude of the open stub 15 of a length 1/4lambda becomes maximum at its open end, and zero at the other end, so the emitter E terminal of the transistor 11 is grounded in terms of high frequency. Consequently, the high-frequency grounding of the transistor 11 becomes perfect, and it becomes possible for the transistor 11 to exhibit its performance fully without causing oscillation, etc.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、電子回路基板上に搭載
された高周波能動素子の接地回路に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a grounding circuit for a high frequency active device mounted on an electronic circuit board.

【0002】[0002]

【従来の技術】従来、電子回路基板上に搭載されたトラ
ンジスタ、或いは電界効果トランジスタ(FET)等の
高周波能動素子の端子を接地するには、図2に示すよう
に、電子回路基板1に設けられたスルーホール2を用
い、スルーホール2を介して高周波能動素子3の接地端
子3aを他面に形成されたシールド導体4に接続してい
た。
2. Description of the Related Art Conventionally, to ground a terminal of a high frequency active element such as a transistor mounted on an electronic circuit board or a field effect transistor (FET), it is provided on the electronic circuit board 1 as shown in FIG. The ground terminal 3a of the high frequency active element 3 was connected to the shield conductor 4 formed on the other surface through the through hole 2.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、高周波
能動素子3を動作させる信号周波数が高くなり、波長が
短くなってくると、スルーホール2の長さ(電子回路基
板の厚さt)が無視できなくなり、スルーホール2がイ
ンダクタンスとして働くようになってしまう。このた
め、高周波能動素子3の高周波的な接地が不完全とな
り、能動素子の性能を十分に発揮できなくなると共に、
発振等を引き起こす原因になっていた。
However, when the signal frequency for operating the high frequency active element 3 becomes higher and the wavelength becomes shorter, the length of the through hole 2 (the thickness t of the electronic circuit board) can be ignored. Then, the through hole 2 comes to function as an inductance. Therefore, high-frequency grounding of the high-frequency active element 3 becomes incomplete, and the performance of the active element cannot be fully exhibited.
It was a cause of oscillation.

【0004】本発明の目的は上記の問題点に鑑み、高周
波的に完全な接地状態が得られる高周波能動素子接地回
路を提供することにある。
In view of the above problems, an object of the present invention is to provide a high frequency active element grounding circuit which can obtain a completely grounded state in terms of high frequency.

【0005】[0005]

【課題を解決するための手段】本発明は上記の目的を達
成するために、電子回路基板上に搭載された電界効果ト
ランジスタ等の高周波能動素子の接地端子に、該高周波
能動素子の動作信号周波数に基づく四分の一波長の長さ
の一端開放型のストリップ線路を接続してなる高周波能
動素子接地回路を提案する。
In order to achieve the above object, the present invention provides a ground terminal of a high frequency active element such as a field effect transistor mounted on an electronic circuit board with an operating signal frequency of the high frequency active element. We propose a high-frequency active device grounding circuit based on a quarter-wavelength open-ended strip line.

【0006】[0006]

【作用】本発明によれば、高周波能動素子の接地端子
に、該高周波能動素子の動作信号周波数に基づく四分の
一波長の長さの一端開放型のストリップ線路が接続され
る。前記四分の一波長の長さの一端開放型のストリップ
線路は、その開放端で電圧振幅が最大となり、他端にお
いて電圧振幅はゼロになり、高周波的に接地状態が得ら
れる。
According to the present invention, the ground terminal of the high frequency active element is connected to the one end open type strip line having a length of a quarter wavelength based on the operating signal frequency of the high frequency active element. The one end open type strip line having a length of a quarter wavelength has a maximum voltage amplitude at the open end and a voltage amplitude of zero at the other end, and a grounded state is obtained at high frequencies.

【0007】[0007]

【実施例】以下、図面に基づいて本発明の一実施例を説
明する。図1は本発明の一実施例を示す回路図、図3は
一実施例の構成図、図4は一実施例の要部を示す側面断
面図である。図において、11は高周波信号によって動
作しているトランジスタで、電子回路基板(以下、基板
と称する)12上に搭載され、そのエミッタEはスルー
ホール13を介して基板12の裏面に形成されたシール
ド導体14に接続されて接地されている。さらに、トラ
ンジスタ11のエミッタには、基板12の表面に設けら
れた一端開放型のマイクロストリップ線路からなるオー
プンスタブ15の他端に接続されている。このオープン
スタブ15は、トランジスタ11の動作信号周波数に基
づく1/4λの長さを有している。また、トランジスタ
11のベースB及びコレクタCはそれぞれに対応したマ
イクロストリップ線路16,17に接続されている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a circuit diagram showing an embodiment of the present invention, FIG. 3 is a configuration diagram of the embodiment, and FIG. 4 is a side sectional view showing a main part of the embodiment. In the figure, reference numeral 11 denotes a transistor operated by a high frequency signal, which is mounted on an electronic circuit board (hereinafter referred to as a board) 12, and its emitter E is a shield formed on the back surface of the board 12 through a through hole 13. It is connected to the conductor 14 and grounded. Further, the emitter of the transistor 11 is connected to the other end of the open stub 15 which is provided on the surface of the substrate 12 and which is an open-ended microstrip line. The open stub 15 has a length of 1 / 4λ based on the operating signal frequency of the transistor 11. The base B and the collector C of the transistor 11 are connected to the corresponding microstrip lines 16 and 17, respectively.

【0008】前述の構成によれば、トランジスタ11の
動作信号周波数が高周波であるため、スルーホール13
の長さ(基板12の厚さt)が無視できなくなり、スル
ーホール13がインダクタンスとして働くようになる
が、エミッタEに接続されたオープンスタブ15によっ
て高周波的に接地状態が得られている。
According to the above-mentioned structure, since the operating signal frequency of the transistor 11 is a high frequency, the through hole 13
(The thickness t of the substrate 12) cannot be ignored, and the through hole 13 acts as an inductance, but the open stub 15 connected to the emitter E provides a high-frequency grounded state.

【0009】即ち、図5に示すように1/4λの長さの
オープンスタブ15は、その開放端で電圧振幅が最大と
なり、他端において電圧振幅はゼロになるので、トラン
ジスタ11のエミッタE端子において高周波的に接地状
態が得られる。
That is, as shown in FIG. 5, the open stub 15 having a length of 1 / 4λ has a maximum voltage amplitude at the open end and a zero voltage amplitude at the other end, so that the emitter E terminal of the transistor 11 is closed. At, a grounded state can be obtained at high frequency.

【0010】これにより、トランジスタ11の高周波的
な接地が完全となり、トランジスタ11の性能を十分に
発揮することができると共に、発振等を引き起こすこと
がなくなる。
As a result, the high-frequency grounding of the transistor 11 is completed, the performance of the transistor 11 can be sufficiently exhibited, and oscillation or the like will not occur.

【0011】尚、本実施例では、高周波信号によって動
作しているトランジスタの接地回路を示したが、これに
限定されることはなく、本発明は他の高周波能動素子に
用いても同様の効果を得ることができるものである。
In this embodiment, the grounding circuit of the transistor operating by the high frequency signal is shown. However, the present invention is not limited to this, and the present invention can be applied to other high frequency active elements to obtain the same effect. Is what you can get.

【0012】[0012]

【発明の効果】以上説明したように本発明によれば、四
分の一波長の長さの一端開放型のストリップ線路は、そ
の開放端で電圧振幅が最大となり、他端において電圧振
幅はゼロになり、高周波的に接地状態が得られるので、
高周波能動素子の高周波的な接地が完全となり、能動素
子の性能を十分に発揮できると共に、発振等を引き起こ
すことがなくなる。
As described above, according to the present invention, the strip line of the one-end open type having the length of the quarter wavelength has the maximum voltage amplitude at the open end and has the zero voltage amplitude at the other end. And the grounded state can be obtained at high frequency,
The high-frequency grounding of the high-frequency active element is complete, the performance of the active element can be fully exhibited, and oscillation or the like is not caused.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示す回路図FIG. 1 is a circuit diagram showing an embodiment of the present invention.

【図2】従来例の要部を示す側面断面図FIG. 2 is a side sectional view showing a main part of a conventional example.

【図3】本発明の一実施例を示す構成図FIG. 3 is a configuration diagram showing an embodiment of the present invention.

【図4】本発明の一実施例の要部を示す側面断面図FIG. 4 is a side sectional view showing an essential part of an embodiment of the present invention.

【図5】本発明の一実施例の動作を説明する図FIG. 5 is a diagram for explaining the operation of the embodiment of the present invention.

【符号の説明】[Explanation of symbols]

11…トランジスタ、12…電子回路基板、13…スル
ーホール、14…シールド導体、15…オープンスタ
ブ、16,17…マイクロストリップ線路、E…エミッ
タ、C…コレクタ、B…ベース。
11 ... Transistor, 12 ... Electronic circuit board, 13 ... Through hole, 14 ... Shield conductor, 15 ... Open stub, 16, 17 ... Microstrip line, E ... Emitter, C ... Collector, B ... Base.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 電子回路基板上に搭載された電界効果ト
ランジスタ等の高周波能動素子の接地端子に、該高周波
能動素子の動作信号周波数に基づく四分の一波長の長さ
の一端開放型のストリップ線路を接続してなることを特
徴とする高周波能動素子接地回路。
1. A strip, which is open at one end and has a length of a quarter wavelength based on an operating signal frequency of the high frequency active element, is connected to a ground terminal of a high frequency active element such as a field effect transistor mounted on an electronic circuit board. A high-frequency active element ground circuit characterized by connecting lines.
JP6025710A 1994-02-23 1994-02-23 Grounding circuit for high-frequency active element Pending JPH07235740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6025710A JPH07235740A (en) 1994-02-23 1994-02-23 Grounding circuit for high-frequency active element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6025710A JPH07235740A (en) 1994-02-23 1994-02-23 Grounding circuit for high-frequency active element

Publications (1)

Publication Number Publication Date
JPH07235740A true JPH07235740A (en) 1995-09-05

Family

ID=12173355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6025710A Pending JPH07235740A (en) 1994-02-23 1994-02-23 Grounding circuit for high-frequency active element

Country Status (1)

Country Link
JP (1) JPH07235740A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002080355A1 (en) * 2001-03-28 2002-10-10 Sharp Kabushiki Kaisha High-frequency amplifier
JP2007242683A (en) * 2006-03-06 2007-09-20 Tdk Corp High-frequency circuit board
JP2016197832A (en) * 2015-04-06 2016-11-24 三菱電機特機システム株式会社 Ground circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002080355A1 (en) * 2001-03-28 2002-10-10 Sharp Kabushiki Kaisha High-frequency amplifier
JP2007242683A (en) * 2006-03-06 2007-09-20 Tdk Corp High-frequency circuit board
JP2016197832A (en) * 2015-04-06 2016-11-24 三菱電機特機システム株式会社 Ground circuit

Similar Documents

Publication Publication Date Title
JPH07193182A (en) Semiconductor device
JPH07235740A (en) Grounding circuit for high-frequency active element
CA2320187A1 (en) Microwave amplifier optimized for stable operation
JP2747286B2 (en) High frequency oscillator
JPH01273404A (en) High frequency semiconductor device
JPH07263901A (en) High frequency parts
JPH0115226Y2 (en)
JP2505442B2 (en) Semiconductor amplifier
JPH0212725Y2 (en)
JP3129274B2 (en) High frequency circuit impedance conversion circuit
JPH06276038A (en) High frequency low noise amplifier
JPH066601Y2 (en) Microwave amplifier
JPS622819Y2 (en)
JPH0786832A (en) Microwave oscillator
JPH09275303A (en) Microwave switch
JPH042492Y2 (en)
JPH0614495Y2 (en) High frequency oscillator
JPH05145338A (en) Dielectric oscillation circuit
JPS5830322Y2 (en) Waveguide mixer using monolithic integrated circuits
JPH0273818U (en)
JP2510113Y2 (en) Frequency multiplier
JP2842068B2 (en) High frequency amplifier circuit
JPH07240609A (en) Mounting structure for fet chip in microwave hybrid integrated circuit
JPS60236508A (en) Wide band amplifier
JPH0223102U (en)

Legal Events

Date Code Title Description
A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20030715