JPH07235740A - Grounding circuit for high-frequency active element - Google Patents
Grounding circuit for high-frequency active elementInfo
- Publication number
- JPH07235740A JPH07235740A JP6025710A JP2571094A JPH07235740A JP H07235740 A JPH07235740 A JP H07235740A JP 6025710 A JP6025710 A JP 6025710A JP 2571094 A JP2571094 A JP 2571094A JP H07235740 A JPH07235740 A JP H07235740A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- frequency
- active element
- frequency active
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、電子回路基板上に搭載
された高周波能動素子の接地回路に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a grounding circuit for a high frequency active device mounted on an electronic circuit board.
【0002】[0002]
【従来の技術】従来、電子回路基板上に搭載されたトラ
ンジスタ、或いは電界効果トランジスタ(FET)等の
高周波能動素子の端子を接地するには、図2に示すよう
に、電子回路基板1に設けられたスルーホール2を用
い、スルーホール2を介して高周波能動素子3の接地端
子3aを他面に形成されたシールド導体4に接続してい
た。2. Description of the Related Art Conventionally, to ground a terminal of a high frequency active element such as a transistor mounted on an electronic circuit board or a field effect transistor (FET), it is provided on the electronic circuit board 1 as shown in FIG. The ground terminal 3a of the high frequency active element 3 was connected to the shield conductor 4 formed on the other surface through the through hole 2.
【0003】[0003]
【発明が解決しようとする課題】しかしながら、高周波
能動素子3を動作させる信号周波数が高くなり、波長が
短くなってくると、スルーホール2の長さ(電子回路基
板の厚さt)が無視できなくなり、スルーホール2がイ
ンダクタンスとして働くようになってしまう。このた
め、高周波能動素子3の高周波的な接地が不完全とな
り、能動素子の性能を十分に発揮できなくなると共に、
発振等を引き起こす原因になっていた。However, when the signal frequency for operating the high frequency active element 3 becomes higher and the wavelength becomes shorter, the length of the through hole 2 (the thickness t of the electronic circuit board) can be ignored. Then, the through hole 2 comes to function as an inductance. Therefore, high-frequency grounding of the high-frequency active element 3 becomes incomplete, and the performance of the active element cannot be fully exhibited.
It was a cause of oscillation.
【0004】本発明の目的は上記の問題点に鑑み、高周
波的に完全な接地状態が得られる高周波能動素子接地回
路を提供することにある。In view of the above problems, an object of the present invention is to provide a high frequency active element grounding circuit which can obtain a completely grounded state in terms of high frequency.
【0005】[0005]
【課題を解決するための手段】本発明は上記の目的を達
成するために、電子回路基板上に搭載された電界効果ト
ランジスタ等の高周波能動素子の接地端子に、該高周波
能動素子の動作信号周波数に基づく四分の一波長の長さ
の一端開放型のストリップ線路を接続してなる高周波能
動素子接地回路を提案する。In order to achieve the above object, the present invention provides a ground terminal of a high frequency active element such as a field effect transistor mounted on an electronic circuit board with an operating signal frequency of the high frequency active element. We propose a high-frequency active device grounding circuit based on a quarter-wavelength open-ended strip line.
【0006】[0006]
【作用】本発明によれば、高周波能動素子の接地端子
に、該高周波能動素子の動作信号周波数に基づく四分の
一波長の長さの一端開放型のストリップ線路が接続され
る。前記四分の一波長の長さの一端開放型のストリップ
線路は、その開放端で電圧振幅が最大となり、他端にお
いて電圧振幅はゼロになり、高周波的に接地状態が得ら
れる。According to the present invention, the ground terminal of the high frequency active element is connected to the one end open type strip line having a length of a quarter wavelength based on the operating signal frequency of the high frequency active element. The one end open type strip line having a length of a quarter wavelength has a maximum voltage amplitude at the open end and a voltage amplitude of zero at the other end, and a grounded state is obtained at high frequencies.
【0007】[0007]
【実施例】以下、図面に基づいて本発明の一実施例を説
明する。図1は本発明の一実施例を示す回路図、図3は
一実施例の構成図、図4は一実施例の要部を示す側面断
面図である。図において、11は高周波信号によって動
作しているトランジスタで、電子回路基板(以下、基板
と称する)12上に搭載され、そのエミッタEはスルー
ホール13を介して基板12の裏面に形成されたシール
ド導体14に接続されて接地されている。さらに、トラ
ンジスタ11のエミッタには、基板12の表面に設けら
れた一端開放型のマイクロストリップ線路からなるオー
プンスタブ15の他端に接続されている。このオープン
スタブ15は、トランジスタ11の動作信号周波数に基
づく1/4λの長さを有している。また、トランジスタ
11のベースB及びコレクタCはそれぞれに対応したマ
イクロストリップ線路16,17に接続されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a circuit diagram showing an embodiment of the present invention, FIG. 3 is a configuration diagram of the embodiment, and FIG. 4 is a side sectional view showing a main part of the embodiment. In the figure, reference numeral 11 denotes a transistor operated by a high frequency signal, which is mounted on an electronic circuit board (hereinafter referred to as a board) 12, and its emitter E is a shield formed on the back surface of the board 12 through a through hole 13. It is connected to the conductor 14 and grounded. Further, the emitter of the transistor 11 is connected to the other end of the open stub 15 which is provided on the surface of the substrate 12 and which is an open-ended microstrip line. The open stub 15 has a length of 1 / 4λ based on the operating signal frequency of the transistor 11. The base B and the collector C of the transistor 11 are connected to the corresponding microstrip lines 16 and 17, respectively.
【0008】前述の構成によれば、トランジスタ11の
動作信号周波数が高周波であるため、スルーホール13
の長さ(基板12の厚さt)が無視できなくなり、スル
ーホール13がインダクタンスとして働くようになる
が、エミッタEに接続されたオープンスタブ15によっ
て高周波的に接地状態が得られている。According to the above-mentioned structure, since the operating signal frequency of the transistor 11 is a high frequency, the through hole 13
(The thickness t of the substrate 12) cannot be ignored, and the through hole 13 acts as an inductance, but the open stub 15 connected to the emitter E provides a high-frequency grounded state.
【0009】即ち、図5に示すように1/4λの長さの
オープンスタブ15は、その開放端で電圧振幅が最大と
なり、他端において電圧振幅はゼロになるので、トラン
ジスタ11のエミッタE端子において高周波的に接地状
態が得られる。That is, as shown in FIG. 5, the open stub 15 having a length of 1 / 4λ has a maximum voltage amplitude at the open end and a zero voltage amplitude at the other end, so that the emitter E terminal of the transistor 11 is closed. At, a grounded state can be obtained at high frequency.
【0010】これにより、トランジスタ11の高周波的
な接地が完全となり、トランジスタ11の性能を十分に
発揮することができると共に、発振等を引き起こすこと
がなくなる。As a result, the high-frequency grounding of the transistor 11 is completed, the performance of the transistor 11 can be sufficiently exhibited, and oscillation or the like will not occur.
【0011】尚、本実施例では、高周波信号によって動
作しているトランジスタの接地回路を示したが、これに
限定されることはなく、本発明は他の高周波能動素子に
用いても同様の効果を得ることができるものである。In this embodiment, the grounding circuit of the transistor operating by the high frequency signal is shown. However, the present invention is not limited to this, and the present invention can be applied to other high frequency active elements to obtain the same effect. Is what you can get.
【0012】[0012]
【発明の効果】以上説明したように本発明によれば、四
分の一波長の長さの一端開放型のストリップ線路は、そ
の開放端で電圧振幅が最大となり、他端において電圧振
幅はゼロになり、高周波的に接地状態が得られるので、
高周波能動素子の高周波的な接地が完全となり、能動素
子の性能を十分に発揮できると共に、発振等を引き起こ
すことがなくなる。As described above, according to the present invention, the strip line of the one-end open type having the length of the quarter wavelength has the maximum voltage amplitude at the open end and has the zero voltage amplitude at the other end. And the grounded state can be obtained at high frequency,
The high-frequency grounding of the high-frequency active element is complete, the performance of the active element can be fully exhibited, and oscillation or the like is not caused.
【図1】本発明の一実施例を示す回路図FIG. 1 is a circuit diagram showing an embodiment of the present invention.
【図2】従来例の要部を示す側面断面図FIG. 2 is a side sectional view showing a main part of a conventional example.
【図3】本発明の一実施例を示す構成図FIG. 3 is a configuration diagram showing an embodiment of the present invention.
【図4】本発明の一実施例の要部を示す側面断面図FIG. 4 is a side sectional view showing an essential part of an embodiment of the present invention.
【図5】本発明の一実施例の動作を説明する図FIG. 5 is a diagram for explaining the operation of the embodiment of the present invention.
11…トランジスタ、12…電子回路基板、13…スル
ーホール、14…シールド導体、15…オープンスタ
ブ、16,17…マイクロストリップ線路、E…エミッ
タ、C…コレクタ、B…ベース。11 ... Transistor, 12 ... Electronic circuit board, 13 ... Through hole, 14 ... Shield conductor, 15 ... Open stub, 16, 17 ... Microstrip line, E ... Emitter, C ... Collector, B ... Base.
Claims (1)
ランジスタ等の高周波能動素子の接地端子に、該高周波
能動素子の動作信号周波数に基づく四分の一波長の長さ
の一端開放型のストリップ線路を接続してなることを特
徴とする高周波能動素子接地回路。1. A strip, which is open at one end and has a length of a quarter wavelength based on an operating signal frequency of the high frequency active element, is connected to a ground terminal of a high frequency active element such as a field effect transistor mounted on an electronic circuit board. A high-frequency active element ground circuit characterized by connecting lines.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6025710A JPH07235740A (en) | 1994-02-23 | 1994-02-23 | Grounding circuit for high-frequency active element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6025710A JPH07235740A (en) | 1994-02-23 | 1994-02-23 | Grounding circuit for high-frequency active element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH07235740A true JPH07235740A (en) | 1995-09-05 |
Family
ID=12173355
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6025710A Pending JPH07235740A (en) | 1994-02-23 | 1994-02-23 | Grounding circuit for high-frequency active element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07235740A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002080355A1 (en) * | 2001-03-28 | 2002-10-10 | Sharp Kabushiki Kaisha | High-frequency amplifier |
JP2007242683A (en) * | 2006-03-06 | 2007-09-20 | Tdk Corp | High-frequency circuit board |
JP2016197832A (en) * | 2015-04-06 | 2016-11-24 | 三菱電機特機システム株式会社 | Ground circuit |
-
1994
- 1994-02-23 JP JP6025710A patent/JPH07235740A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002080355A1 (en) * | 2001-03-28 | 2002-10-10 | Sharp Kabushiki Kaisha | High-frequency amplifier |
JP2007242683A (en) * | 2006-03-06 | 2007-09-20 | Tdk Corp | High-frequency circuit board |
JP2016197832A (en) * | 2015-04-06 | 2016-11-24 | 三菱電機特機システム株式会社 | Ground circuit |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH07193182A (en) | Semiconductor device | |
JPH07235740A (en) | Grounding circuit for high-frequency active element | |
CA2320187A1 (en) | Microwave amplifier optimized for stable operation | |
JP2747286B2 (en) | High frequency oscillator | |
JPH01273404A (en) | High frequency semiconductor device | |
JPH07263901A (en) | High frequency parts | |
JPH0115226Y2 (en) | ||
JP2505442B2 (en) | Semiconductor amplifier | |
JPH0212725Y2 (en) | ||
JP3129274B2 (en) | High frequency circuit impedance conversion circuit | |
JPH06276038A (en) | High frequency low noise amplifier | |
JPH066601Y2 (en) | Microwave amplifier | |
JPS622819Y2 (en) | ||
JPH0786832A (en) | Microwave oscillator | |
JPH09275303A (en) | Microwave switch | |
JPH042492Y2 (en) | ||
JPH0614495Y2 (en) | High frequency oscillator | |
JPH05145338A (en) | Dielectric oscillation circuit | |
JPS5830322Y2 (en) | Waveguide mixer using monolithic integrated circuits | |
JPH0273818U (en) | ||
JP2510113Y2 (en) | Frequency multiplier | |
JP2842068B2 (en) | High frequency amplifier circuit | |
JPH07240609A (en) | Mounting structure for fet chip in microwave hybrid integrated circuit | |
JPS60236508A (en) | Wide band amplifier | |
JPH0223102U (en) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20030715 |