JPH0126192B2 - - Google Patents

Info

Publication number
JPH0126192B2
JPH0126192B2 JP55166084A JP16608480A JPH0126192B2 JP H0126192 B2 JPH0126192 B2 JP H0126192B2 JP 55166084 A JP55166084 A JP 55166084A JP 16608480 A JP16608480 A JP 16608480A JP H0126192 B2 JPH0126192 B2 JP H0126192B2
Authority
JP
Japan
Prior art keywords
region
gate
semiconductor substrate
mask material
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55166084A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5789257A (en
Inventor
Tadayoshi Enomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP55166084A priority Critical patent/JPS5789257A/ja
Publication of JPS5789257A publication Critical patent/JPS5789257A/ja
Publication of JPH0126192B2 publication Critical patent/JPH0126192B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP55166084A 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor Granted JPS5789257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55166084A JPS5789257A (en) 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55166084A JPS5789257A (en) 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5789257A JPS5789257A (en) 1982-06-03
JPH0126192B2 true JPH0126192B2 (enrdf_load_html_response) 1989-05-22

Family

ID=15824681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55166084A Granted JPS5789257A (en) 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5789257A (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064473A (ja) * 1983-09-20 1985-04-13 Seiko Epson Corp Ｍｏｓ型トランジスタ

Also Published As

Publication number Publication date
JPS5789257A (en) 1982-06-03

Similar Documents

Publication Publication Date Title
US6037627A (en) MOS semiconductor device
EP0248292B1 (en) Semiconductor device having a high breakdown voltage
US6391750B1 (en) Method of selectively controlling contact resistance by controlling impurity concentration and silicide thickness
JPH01205470A (ja) 半導体装置およびその製造方法
US3883372A (en) Method of making a planar graded channel MOS transistor
JPH0571174B2 (enrdf_load_html_response)
US5238857A (en) Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure
JPH02110973A (ja) Ｍｏｓ型半導体装置およびその製造方法
JPS59121976A (ja) 半導体装置
US5502322A (en) Transistor having a nonuniform doping channel
JP3420301B2 (ja) 薄膜トランジスタの製造方法
KR890005817A (ko) 반도체 바이씨 모오스 장치의 제조방법
JP3057792B2 (ja) 薄膜トランジスタの製造方法
JP2729422B2 (ja) 半導体装置
JPH0126192B2 (enrdf_load_html_response)
JPS6346992B2 (enrdf_load_html_response)
EP0401577B1 (en) Metal oxide-semiconductor device and fabrication method of the same
JPH07106588A (ja) 半導体装置およびその製造方法
JPS63227059A (ja) 半導体装置およびその製造方法
JPS622705B2 (enrdf_load_html_response)
JPH07120804B2 (ja) 半導体装置の製造方法
KR100555454B1 (ko) Soi 트랜지스터의 제조방법
JPH088431A (ja) 半導体装置及びその製造方法
JPS6146990B2 (enrdf_load_html_response)
JP2701828B2 (ja) 半導体装置及びその製造方法