JPH01261300A - 減圧気相成長法によるＳｉ基板上へのＡｌ↓２Ｏ↓３単結晶膜のヘテロエピタキシャル成長方法 - Google Patents
減圧気相成長法によるＳｉ基板上へのＡｌ↓２Ｏ↓３単結晶膜のヘテロエピタキシャル成長方法Info
- Publication number
- JPH01261300A JPH01261300A JP8824188A JP8824188A JPH01261300A JP H01261300 A JPH01261300 A JP H01261300A JP 8824188 A JP8824188 A JP 8824188A JP 8824188 A JP8824188 A JP 8824188A JP H01261300 A JPH01261300 A JP H01261300A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- single crystal
- pressure vapor
- growth
- al2o3
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 16
- 239000013078 crystal Substances 0.000 title claims abstract description 14
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 8
- 238000001947 vapour-phase growth Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 abstract description 10
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 229910003158 γ-Al2O3 Inorganic materials 0.000 abstract description 4
- 230000006698 induction Effects 0.000 abstract description 2
- 239000012495 reaction gas Substances 0.000 abstract description 2
- 230000005587 bubbling Effects 0.000 abstract 1
- 239000003085 diluting agent Substances 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 229910052593 corundum Inorganic materials 0.000 description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 239000001272 nitrous oxide Substances 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 3
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000000864 Auger spectrum Methods 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8824188A JPH01261300A (ja) | 1988-04-12 | 1988-04-12 | 減圧気相成長法によるＳｉ基板上へのＡｌ↓２Ｏ↓３単結晶膜のヘテロエピタキシャル成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8824188A JPH01261300A (ja) | 1988-04-12 | 1988-04-12 | 減圧気相成長法によるＳｉ基板上へのＡｌ↓２Ｏ↓３単結晶膜のヘテロエピタキシャル成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01261300A true JPH01261300A (ja) | 1989-10-18 |
| JPH057358B2 JPH057358B2 (enrdf_load_stackoverflow) | 1993-01-28 |
Family
ID=13937363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8824188A Granted JPH01261300A (ja) | 1988-04-12 | 1988-04-12 | 減圧気相成長法によるＳｉ基板上へのＡｌ↓２Ｏ↓３単結晶膜のヘテロエピタキシャル成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01261300A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6528387B1 (en) | 1997-06-19 | 2003-03-04 | Asahi Kasei Kabushiki Kaisha | SOI substrate and process for preparing the same, and semiconductor device and process for preparing the same |
| JP2007088013A (ja) * | 2005-09-20 | 2007-04-05 | Toyohashi Univ Of Technology | 金属酸化物薄膜の形成方法 |
-
1988
- 1988-04-12 JP JP8824188A patent/JPH01261300A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6528387B1 (en) | 1997-06-19 | 2003-03-04 | Asahi Kasei Kabushiki Kaisha | SOI substrate and process for preparing the same, and semiconductor device and process for preparing the same |
| JP2007088013A (ja) * | 2005-09-20 | 2007-04-05 | Toyohashi Univ Of Technology | 金属酸化物薄膜の形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH057358B2 (enrdf_load_stackoverflow) | 1993-01-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6291319B1 (en) | Method for fabricating a semiconductor structure having a stable crystalline interface with silicon | |
| EP0518800A2 (en) | Heteroepitaxial growth of germanium on silicon by UHV/CVD | |
| JP2005524987A (ja) | シリコンオンインシュレータ構造及びその製造方法 | |
| US20060130745A1 (en) | Domain epitaxy for thin film growth | |
| JPH07235692A (ja) | 化合物半導体装置及びその形成方法 | |
| EP0177903A2 (en) | Semiconductor device having a gallium arsenide crystal layer grown on a silicon substrate and method for producing it | |
| JPH01261300A (ja) | 減圧気相成長法によるＳｉ基板上へのＡｌ↓２Ｏ↓３単結晶膜のヘテロエピタキシャル成長方法 | |
| JPH0529234A (ja) | エピタキシヤル成長法 | |
| JP3649786B2 (ja) | ペロブスカイト型構造単結晶用処理液及びペロブスカイト型構造単結晶の処理方法 | |
| JP2987926B2 (ja) | 気相成長方法 | |
| JP2743351B2 (ja) | 気相エピタキシヤル成長方法 | |
| JP2704224B2 (ja) | 半導体素子及びその製法 | |
| JPS6012775B2 (ja) | 異質基板上への単結晶半導体層形成方法 | |
| JPS5982744A (ja) | Ｓｏｓ基板の製造法 | |
| JPH01215014A (ja) | 半導体結晶の成長方法 | |
| JPH01179788A (ja) | Ｓｉ基板上への３−５族化合物半導体結晶の成長方法 | |
| JPH03195016A (ja) | Ｓｉ基板の熱清浄化法及びエピタキシャル成長及び熱処理装置 | |
| JP2753832B2 (ja) | 第▲ｉｉｉ▼・ｖ族化合物半導体の気相成長法 | |
| JPS6144424A (ja) | 化合物半導体の気相成長方法 | |
| JPH057359B2 (enrdf_load_stackoverflow) | ||
| JPH01176293A (ja) | バッファ層を形成するヘテロ・エピタキシャル成長方法及び該方法に使用する装置 | |
| JPH01183825A (ja) | 単結晶シリコン膜の形成方法 | |
| JPH04335519A (ja) | 半導体結晶の製造方法 | |
| JPS62147722A (ja) | エピタキシヤル成長方法 | |
| JPH0686355B2 (ja) | 第▲ｉｉｉ▼・ｖ族化合物半導体の気相成長法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |