JPH01239857A - ワイヤーボンディング方法 - Google Patents

ワイヤーボンディング方法

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Publication number
JPH01239857A
JPH01239857A JP63066643A JP6664388A JPH01239857A JP H01239857 A JPH01239857 A JP H01239857A JP 63066643 A JP63066643 A JP 63066643A JP 6664388 A JP6664388 A JP 6664388A JP H01239857 A JPH01239857 A JP H01239857A
Authority
JP
Japan
Prior art keywords
capillary
wire
frame
temperature
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63066643A
Other languages
English (en)
Inventor
Toshio Kobayashi
小林　寿雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP63066643A priority Critical patent/JPH01239857A/ja
Publication of JPH01239857A publication Critical patent/JPH01239857A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2924/20104—Temperature range 100 C=<T<150 C, 373.15 K =< T < 423.15K

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、半導体チップ上電極とリードフレームとの接
続を低い温度で可能にしたワイヤーボンディング方法に
関するものである。
従来の技術 以下に従来のワイヤーボンディング方法について第２図
を用いて説明する。図において、キャピラリーｌは単導
体基板であるシリコンチップ３上の電極４とリードフレ
ーム５とを細ｖＡ２により結線するものであり、その軸
方向に設けられている孔を通して細線２が保持されてい
る。また、り一ドフレーム５は加熱用オーブン６を備え
ている輸送用レール７上に載置されて移動する。まず、
キャピラリー１内を通された細線２の一端を、オーブン
６により加熱されているシリコンチップ３の電極４上に
適当な圧力で熱圧着し、次に、キャピラリー１の上下左
右の動きによりリードフレーム５上の所定位置に細線２
の位端を熱圧着するものである。
発明が解決しようとする課題 しかしながら、上記の従来の構成では、ｍｍによるリー
ドフレームとシリコンチップとを接続するために、リー
ドフレームを４００℃程度の高い温度に加熱している。
その結果、シリコンチップの特性が高熱により劣化し、
半導体装置の寿命に悪影響を及ぼすという課題があった
。
本発明は、上記従来の問題を解決するもので、より低い
温度でｊｌｌｌｊ、９の接続を可能にするワイヤーボン
ディング方法を提供することを目的とする。
課題を解決するための手段 この目的を達成するために本発明のワイヤーボンディン
グ方法は、接続用の細線を予熱しておき、これでリード
フレームと半導体チップの電極とを接続するものである
。
作用 リードフレームと半導体チップの電極とを予熱された細
線で接続することにより、接続のための温度が低くてず
み、リードフレーム上の半導体チップが接続の際の熱に
より特性劣化を生じるおそれが少なくなる。
実施例 以下、本発明の一実施例について、第１図を参照しなが
ら説明する。
図において、１はキャピラリー、２は金線で、キャピラ
リー１によって保持されている。３は半導体チップとと
えはシリコンデツプ、４はこのシリコンチップ３の電極
、５はリードフレーム、６はオーブンで、シリコンチッ
プ３やリードフレーム５を加熱するためのものである。
７はリードフレーム輸送用レール、８はキャピラリー１
を旋巻している電熱線で、キャピラリー１を熱し、それ
によってキャピラリー１を貫通する金線２を予熱する。
９はキャピラリー１と電熱線８とを被覆している断熱材
である。
まず、電熱線８により、キャピラリー１を所定温度に加
熱することにより、このキャピラリー１内を貫通してい
る金線２を加熱し、このあらかじめ力１１熱されている
金線２をシリコンチップ３の電極４上にキャピラリー１
の適当な圧力によって熱圧着する。このときのリードフ
レーム５を加熱するオーブン６の温度は約１８０℃であ
り、当然従来の方法における温度よりも低（でよい。次
に、キャピラリー１の上下左右の動きによりリードフレ
ーム５上の所定位置に金線２を熱圧着し、電極４七リー
ドフレーム５とを接続する。
本実施例によれば、従来たとえば金線と銀めっきフレー
ムとを熱圧着するのに４００℃以上のオーブン温度を必
要としていたが、キャピラリー１″を加熱して金線２を
予熱しておくことにより、約１８０℃のオーブン温度で
熱圧着が可能となった。
このため、シリコンチップ３が高熱によって劣化し、半
導体寿命に悪影響を及ぼすことがな（なった。
なお、本実施例ではキャピラリーを加熱する手段として
電熱線を使用したが、他の加熱手段であってもよいこと
は言うまでもないことである。
発明の効果 本発明の方法では、細線の貫通しているキャピラリーを
加熱しておき、この予熱された細線で半導体チップの電
極とリードフレームとを接続するので、従来の方法に比
べて低い温度で熱圧着することができ、半導体チップの
特性の熱劣化を防止することができる。
【図面の簡単な説明】
第１図は本発明の一実施例を示すワイヤーボンディング
方法を説明するための断面図、第２図は従来のワイヤー
ボンディング方法を説明するための断面図である。 １・・・・・・キャピラリー、２・旧・・細線、３・・
・・・・シリコンチップ、４・旧・・電極、５・旧・・
リードフレーム、６・・・・・・オーブン、８・・・・
・・電熱線。 １・−ヤＹピラリ− ２・−」鐵

Claims (1)

    【特許請求の範囲】
  1. 　半導体基板上の電極とリードフレームとを接続するた
    めの細線を予備加熱し、この予備加熱された細線で前記
    電極と前記リードフレームとを接続することを特徴とす
    るワイヤーボンディング方法。
JP63066643A 1988-03-18 1988-03-18 ワイヤーボンディング方法 Pending JPH01239857A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63066643A JPH01239857A (ja) 1988-03-18 1988-03-18 ワイヤーボンディング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63066643A JPH01239857A (ja) 1988-03-18 1988-03-18 ワイヤーボンディング方法

Publications (1)

Publication Number Publication Date
JPH01239857A true JPH01239857A (ja) 1989-09-25

Family

ID=13321783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63066643A Pending JPH01239857A (ja) 1988-03-18 1988-03-18 ワイヤーボンディング方法

Country Status (1)

Country Link
JP (1) JPH01239857A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100403140B1 (ko) * 1999-12-17 2003-10-30 앰코 테크놀로지 코리아 주식회사 반도체패키지 제조용 히트블럭 장치
KR100895519B1 (ko) * 2006-06-16 2009-04-30 가부시키가이샤 신가와 와이어 본더, 와이어 본딩 방법 및 이를 위한 프로그램을기록한 컴퓨터 판독가능한 기록매체

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100403140B1 (ko) * 1999-12-17 2003-10-30 앰코 테크놀로지 코리아 주식회사 반도체패키지 제조용 히트블럭 장치
KR100895519B1 (ko) * 2006-06-16 2009-04-30 가부시키가이샤 신가와 와이어 본더, 와이어 본딩 방법 및 이를 위한 프로그램을기록한 컴퓨터 판독가능한 기록매체

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