JPH01234388A - 半導体単結晶の成長方法 - Google Patents
半導体単結晶の成長方法Info
- Publication number
- JPH01234388A JPH01234388A JP6269388A JP6269388A JPH01234388A JP H01234388 A JPH01234388 A JP H01234388A JP 6269388 A JP6269388 A JP 6269388A JP 6269388 A JP6269388 A JP 6269388A JP H01234388 A JPH01234388 A JP H01234388A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- melt
- single crystal
- chamber
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 28
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 14
- 239000002994 raw material Substances 0.000 claims abstract description 22
- 239000000155 melt Substances 0.000 claims abstract description 18
- 238000005192 partition Methods 0.000 claims abstract description 13
- 239000007787 solid Substances 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 230000008018 melting Effects 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6269388A JPH01234388A (ja) | 1988-03-16 | 1988-03-16 | 半導体単結晶の成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6269388A JPH01234388A (ja) | 1988-03-16 | 1988-03-16 | 半導体単結晶の成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01234388A true JPH01234388A (ja) | 1989-09-19 |
| JPH0511076B2 JPH0511076B2 (enrdf_load_stackoverflow) | 1993-02-12 |
Family
ID=13207628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6269388A Granted JPH01234388A (ja) | 1988-03-16 | 1988-03-16 | 半導体単結晶の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01234388A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5126114A (en) * | 1987-12-08 | 1992-06-30 | Nkk Corporation | Manufacturing method and equipment of single silicon crystal |
| WO2014038166A1 (ja) * | 2012-09-04 | 2014-03-13 | 新日鐵住金株式会社 | 単結晶の製造装置、それに用いられる坩堝及び単結晶の製造方法 |
| CN104213198A (zh) * | 2014-09-09 | 2014-12-17 | 江苏凯新隆石英科技有限公司 | 一种椭圆形双层石英坩埚及其制备方法 |
-
1988
- 1988-03-16 JP JP6269388A patent/JPH01234388A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5126114A (en) * | 1987-12-08 | 1992-06-30 | Nkk Corporation | Manufacturing method and equipment of single silicon crystal |
| WO2014038166A1 (ja) * | 2012-09-04 | 2014-03-13 | 新日鐵住金株式会社 | 単結晶の製造装置、それに用いられる坩堝及び単結晶の製造方法 |
| KR20150046236A (ko) * | 2012-09-04 | 2015-04-29 | 신닛테츠스미킨 카부시키카이샤 | 단결정의 제조 장치, 그것에 이용되는 도가니 및 단결정의 제조 방법 |
| US20150225872A1 (en) * | 2012-09-04 | 2015-08-13 | Toyota Jidosha Kabushiki Kaisha | Single crystal production apparatus, crucible for use therein, and method of producing single crystal |
| JPWO2014038166A1 (ja) * | 2012-09-04 | 2016-08-08 | 新日鐵住金株式会社 | 単結晶の製造装置、それに用いられる坩堝及び単結晶の製造方法 |
| CN104213198A (zh) * | 2014-09-09 | 2014-12-17 | 江苏凯新隆石英科技有限公司 | 一种椭圆形双层石英坩埚及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0511076B2 (enrdf_load_stackoverflow) | 1993-02-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |