JPH0119265B2 - - Google Patents

Info

Publication number
JPH0119265B2
JPH0119265B2 JP15458381A JP15458381A JPH0119265B2 JP H0119265 B2 JPH0119265 B2 JP H0119265B2 JP 15458381 A JP15458381 A JP 15458381A JP 15458381 A JP15458381 A JP 15458381A JP H0119265 B2 JPH0119265 B2 JP H0119265B2
Authority
JP
Japan
Prior art keywords
heat treatment
temperature
time
semiconductor device
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15458381A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5856343A (ja
Inventor
Kazunori Imaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15458381A priority Critical patent/JPS5856343A/ja
Publication of JPS5856343A publication Critical patent/JPS5856343A/ja
Publication of JPH0119265B2 publication Critical patent/JPH0119265B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP15458381A 1981-09-29 1981-09-29 半導体装置の製造方法 Granted JPS5856343A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15458381A JPS5856343A (ja) 1981-09-29 1981-09-29 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15458381A JPS5856343A (ja) 1981-09-29 1981-09-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5856343A JPS5856343A (ja) 1983-04-04
JPH0119265B2 true JPH0119265B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-04-11

Family

ID=15587374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15458381A Granted JPS5856343A (ja) 1981-09-29 1981-09-29 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5856343A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005524228A (ja) * 2002-04-23 2005-08-11 エス　オー　イ　テク　シリコン　オン　インシュレータ　テクノロジース 高抵抗支持体上に有用層を有する基板の製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5887833A (ja) * 1981-11-20 1983-05-25 Hitachi Ltd 半導体装置の製造方法
EP0099878B1 (en) * 1981-12-31 1989-03-22 International Business Machines Corporation Method for reducing oxygen precipitation in silicon wafers
JPH03185831A (ja) * 1989-12-15 1991-08-13 Komatsu Denshi Kinzoku Kk 半導体装置の製造方法
JP3294723B2 (ja) * 1994-09-26 2002-06-24 東芝セラミックス株式会社 シリコンウェーハの製造方法およびシリコンウェーハ
KR101231412B1 (ko) * 2009-12-29 2013-02-07 실트로닉 아게 실리콘 웨이퍼 및 그 제조 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005524228A (ja) * 2002-04-23 2005-08-11 エス　オー　イ　テク　シリコン　オン　インシュレータ　テクノロジース 高抵抗支持体上に有用層を有する基板の製造方法

Also Published As

Publication number Publication date
JPS5856343A (ja) 1983-04-04

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