JPH01186740A - Electron emission element - Google Patents
Electron emission elementInfo
- Publication number
- JPH01186740A JPH01186740A JP63006978A JP697888A JPH01186740A JP H01186740 A JPH01186740 A JP H01186740A JP 63006978 A JP63006978 A JP 63006978A JP 697888 A JP697888 A JP 697888A JP H01186740 A JPH01186740 A JP H01186740A
- Authority
- JP
- Japan
- Prior art keywords
- electron
- electron emission
- thin film
- emitting
- emission part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 abstract description 24
- 239000011248 coating agent Substances 0.000 abstract description 14
- 238000000576 coating method Methods 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 4
- 239000004020 conductor Substances 0.000 abstract description 2
- 238000002407 reforming Methods 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N Butyraldehyde Chemical compound CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 description 1
- 241001663154 Electron Species 0.000 description 1
- 229910004533 TaB2 Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- -1 pbo Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/316—Cold cathodes, e.g. field-emissive cathode having an electric field parallel to the surface, e.g. thin film cathodes
Landscapes
- Cold Cathode And The Manufacture (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、電子放出素子に関し、特に安定した放出電流
を得ることのできる電子放出素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an electron-emitting device, and particularly to an electron-emitting device that can obtain a stable emission current.
［従来の技術］
従来、簡単な構造で電子の放出が得られる素子として、
例えば、エム アイ エリンソン（Ｍ、Ｉ。[Prior Art] Conventionally, as an element that can emit electrons with a simple structure,
For example, M.I. Ellingson (M,I.
Ｅｌｉｎｓｏｎ）等によって発表された冷陰極素子が知
られている。［ラジオ エンジニアリング エレクトロ
ン フィジイツス （Ｒａｄｉｏ Ｅｎｇ、 Ｅｌｅ
ｃｔｒｏｎ。A cold cathode device announced by John Elinson et al. is known. [Radio Engineering Electron Physics (Radio Eng, Ele
ctron.
Ｐｈｙｓ、）第１０巻、 １２９０〜１２９６頁、 １
９６５年］これは、基板上に形成された小面積の薄膜に
、膜面に平行に電流を流すことにより、電子放出が生ず
る現象を利用するもので、一般には表面伝導形放出素子
と呼ばれている。Phys,) Volume 10, pp. 1290-1296, 1
[965] This utilizes the phenomenon of electron emission caused by passing a current parallel to the film surface through a small-area thin film formed on a substrate, and is generally called a surface conduction type emission device. ing.
この表面伝導形放出素子としては、前記エリンソン等に
より開発された５ｎＯｚ（Ｓｂ）薄膜を用いたもの、Ａ
ｕＱｇによるもの［ジー・ディトマー“スイン ソリド
フィルムス”（Ｇ、 Ｄｉｔｔｍｅｒ：“Ｔｈ１ｎＳ
ｏｌｉｄ Ｆｉｌｍｓ”）、９巻、３１７頁、 （１
９７２年）］、ＩＴＯ薄膜によるもの［エム ハートウ
ェル アンド シー ジー ）オンスタット“アイ イ
ーイー イー トランス” イー デイ−コンク（Ｍ、
ｌｌａｒｔｗｅｌｌ ａｎｄ Ｃ，Ｇ、 Ｆｏｎｓ
ｔａｄ：“ ＴＥＥＥＴｒａｎｓ、 ＥＤ Ｃｏｎｆ、
” ） ５１９頁、 （１９７５年）］。This surface conduction type emission device uses a 5nOz (Sb) thin film developed by Ellingson et al.
By uQg [G. Dittmer: “Th1nS Films” (G, Dittmer: “Th1nS
solid Films”), vol. 9, p. 317, (1
972)], by ITO thin film [M. Hartwell & C.G.
llartwell and C,G, Fons
tad: “TEEETrans, ED Conf,
) p. 519, (1975)].
カーボン薄膜によるもの［荒木久他：“真空”。By carbon thin film [Hisashi Araki et al.: “Vacuum”.
第２６巻、第１号、２２頁、 （１９８３年）］などが
報告されている。Vol. 26, No. 1, p. 22 (1983)].
これらの表面伝導形放出素子の典型的な素子構成を第４
図に示す、同第４図において、ｌおよび２は電気的接続
を得る為の電極、３は電子放出材料で形成される薄膜、
４は基板、５は電子放出部を示す。Typical device configurations of these surface conduction type emitters are shown in the fourth section.
In FIG. 4, l and 2 are electrodes for obtaining electrical connection, 3 is a thin film formed of an electron-emitting material,
4 is a substrate, and 5 is an electron emitting part.
従来、これらの表面伝導形放出素子に於ては、電子放出
を行なう前にあらかじめフォーミングと呼ばれる通電加
熱処理によって電子放出部を形成する。即ち、前記電極
ｌと電極２の間に電圧を印加する事により、薄膜３に通
電し、これにより発生するジュール熱で薄膜３を局所的
に破壊、変形もしくは変質せしめ、電気的に高抵抗な状
態にした電子放出部５を形成することにより電子放出機
能を得ている。Conventionally, in these surface conduction type emitting devices, an electron emitting portion is formed in advance by an electrical heating process called forming before electron emission. That is, by applying a voltage between the electrode 1 and the electrode 2, the thin film 3 is energized, and the Joule heat generated thereby causes the thin film 3 to be locally destroyed, deformed, or altered, resulting in a high electrical resistance. The electron emitting function is obtained by forming the electron emitting portion 5 in the state.
しかしながら、上記の様な従来の通電加熱によるフォー
ミング処理は、本質的には通電のジュール熱による膜の
部分的な破壊又は変質そのものなので、その処理自体が
不安定で再現性に乏しい為に、作成された素子毎に電子
放出特性にばらつきが生じ、又素子の特性を制御して作
成するということが不可能であワた。However, the conventional forming process using electrical heating as described above essentially results in partial destruction or deterioration of the film due to the Joule heat of the electrical current, so the process itself is unstable and has poor reproducibility. The electron emission characteristics vary from device to device, and it is impossible to control the characteristics of the device.
［発明が解決しようとする課題］
以上のような問題点があるため、従来の表面伝導形電子
放出素子は素子構造が簡単であるという利点があるにも
かかわらず、産業上積極的に応用されるには至っていな
かった。[Problems to be solved by the invention] Due to the above-mentioned problems, conventional surface conduction electron-emitting devices have not been actively applied in industry, despite their advantage of simple device structure. It was not yet possible to do so.
本発明は、上記の様な従来例の欠点を除去するためにな
されたものであり、表面伝導形電子放出素子において、
フォーミング処理により得られる電子放出部の表面改質
を施すことにより、特性のばらつきが少なく、低真空で
も安定で寿命の長い電子放出素子を提供することを目的
とする。The present invention was made in order to eliminate the drawbacks of the conventional examples as described above, and in a surface conduction type electron-emitting device,
The object of the present invention is to provide an electron-emitting device with less variation in characteristics, stable even in low vacuum, and long life by performing surface modification of the electron-emitting portion obtained by forming treatment.
［課題を解決するための手段］
即ち、本発明は、表面伝導形電子放出素子において、電
子放出部の少なくとも電子が放出される領域の表面に仕
事関数３．５〜５．０ｅＶの材料からなる被膜を形成し
てなることを特徴とする電子放出素子に係わるものであ
る。[Means for Solving the Problems] That is, the present invention provides a surface conduction electron-emitting device in which at least the surface of the region from which electrons are emitted is made of a material having a work function of 3.5 to 5.0 eV. The present invention relates to an electron-emitting device characterized by forming a film.
以下、図面に基づいて本発明の詳細な説明する。Hereinafter, the present invention will be described in detail based on the drawings.
第１図は本発明の電子放出素子の一実施態様を示す説明
図である。同第１図において、１４は絶縁性を有する基
板、１３は電子放出材料で形成される薄膜、１１および
１２は電気的接続を得るための電極、 １６は仕事関数
３．５〜５．０ｅＶの材料からなる被膜（以下、被膜材
料と記す）である０本発明の電子放出素子は、絶縁性を
有する基板１４上に対向して設けられた一対の電極１１
．１２間に、電子放出材料で形成された薄膜１３を設け
、該薄膜１３を通電加熱処理することにより形成された
電子放出部１５の少なくとも電子が放出される領域の表
面に被膜材料１６を形成してなるものである。FIG. 1 is an explanatory diagram showing one embodiment of the electron-emitting device of the present invention. In FIG. 1, 14 is an insulating substrate, 13 is a thin film made of an electron-emitting material, 11 and 12 are electrodes for electrical connection, and 16 has a work function of 3.5 to 5.0 eV. The electron-emitting device of the present invention, which is a coating made of a material (hereinafter referred to as coating material), has a pair of electrodes 11 provided facing each other on an insulating substrate 14.
．． A thin film 13 made of an electron-emitting material is provided between the electron-emitting parts 12 and a coating material 16 is formed on the surface of at least the region where electrons are emitted of the electron-emitting part 15 formed by heating the thin film 13 with electricity. This is what happens.
次に、本発明の電子放出素子の製造方法について説明す
る。第１図において、先ず、洗浄されたガラス板からな
る基板１４上に蒸着もしくはスパッタにより、ＳｎＯ＊
、 Ｉｎ２Ｏ３，ｐｂｏ等の金属酸化物、Ａｕ、 Ａｇ
、 Ｐｔ等の金属、カーボンその他の各種半導体などの
電子放出材料からなる薄膜を成膜し、次いで、フォトリ
ソグラフィー技術により電子放出部が形成されるネック
部を有する電子放出材料の薄１ｉ１３を形成する。Next, a method for manufacturing an electron-emitting device according to the present invention will be explained. In FIG. 1, SnO* is first deposited on a substrate 14 made of a cleaned glass plate by vapor deposition or sputtering.
, In2O3, metal oxides such as pbo, Au, Ag
, a thin film made of an electron-emitting material such as a metal such as Pt, carbon or other various semiconductors is formed, and then a thin film 1i13 of the electron-emitting material having a neck portion where an electron-emitting portion is formed is formed by photolithography. .
次いで、前記薄膜１３に形成される電子放出部と電気的
接続を得る電極１１．１２をマスク蒸着によりＮｉ、
Ｐｔ、 ＡＩ、 Ｃｕ、 Ａｕなとの通常の導電性材料
により形成する。Next, electrodes 11 and 12 for electrical connection with the electron-emitting portion formed in the thin film 13 are made of Ni, Ni, etc. by mask evaporation.
It is formed from ordinary conductive materials such as Pt, AI, Cu, and Au.
一前記電極１１と電極１２の間に電圧を印加することに
より、薄Ｊ１５ｉ１：Ｉに通電し、これにより発生する
ジュール熱で薄膜１３を局所的に破壊、変形もしくは変
質せしめ、電気的に高抵抗な状態にした電子放出部１５
を形成する。By applying a voltage between the electrodes 11 and 12, the thin film J15i1:I is energized, and the Joule heat generated thereby locally destroys, deforms, or alters the thin film 13, resulting in high electrical resistance. Electron emitting section 15 in the state
form.
前記薄膜１３に形成された電子放出部１５の少なくとも
電子が放射される領域の表面に、ＥＢ蒸着、抵抗加熱蒸
着、スパッタなどの真空蒸着により、仕事関数３．５−
５．０ｅＶのＣｕｂ、 ＭｇＯ，Ｍｏ０ｉ、 Ｔａ２０
５゜Ｔｉ１ｔ、 ＴａＢ２． Ｍｎ８２などの被膜材料
を士数人〜数百人の膜厚に成膜して形成することにより
電子放出素子を得ることがてきる。The surface of at least the electron emitting region of the electron emitting portion 15 formed in the thin film 13 is coated with a work function of 3.5- by vacuum evaporation such as EB evaporation, resistance heating evaporation, or sputtering.
5.0eV Cub, MgO, Mo0i, Ta20
5°Tilt, TaB2. An electron-emitting device can be obtained by forming a coating material such as Mn82 to a thickness of several to several hundred layers.
なお、被膜材料の膜厚は通常３００Å以下、好ましくは
１０人〜１００人の範囲が望ましい。The thickness of the coating material is usually 300 Å or less, preferably in the range of 10 to 100 people.
また、被膜材料は仕事関数３．５〜５．０ｅＶの材料で
あれζによく、例えば前記の酸化物、ホウ化物等が挙げ
られ、仕事関ｆｉ３．５ｅＶ未満では低真空の状以下で
は、実質上仕事関数の変化があり、放出電流のゆらぎが
大きく安定性か劣る。５．０ｅＶを越えると仕事関数が
大きく放出電流が非常に小さくなるなどの問題かあるの
で好ましくない。又、特に仕事関数４．０〜４．５ｅＶ
の間であると、より良好な結果を示すことが認められた
。In addition, even if the coating material has a work function of 3.5 to 5.0 eV, it has good resistance to ζ, such as the above-mentioned oxides and borides. There is a change in the work function, the fluctuation of the emission current is large, and the stability is poor. If it exceeds 5.0 eV, it is not preferable because there are problems such as a large work function and a very small emission current. In addition, especially work function 4.0~4.5eV
It was found that a range between 1 and 2 showed better results.
［作用］
本発明の電子放出素子は、対向する電極間に設けられた
電子放出材料からなる薄膜に電子放出部を形成し、該電
子放出部の少なくとも電子が放出される領域の表面に仕
事関数３．５〜５．０ｅＶの被覆材料を形成し、電子放
出部の表面を改質することにより、ガス吸着によってう
ける仕事関数の変化が極めて小さくなるため、ガス吸着
による放出電流の変動か極めて小さくなる。[Function] In the electron-emitting device of the present invention, an electron-emitting portion is formed in a thin film made of an electron-emitting material provided between opposing electrodes, and a work function is applied to at least the surface of the region from which electrons are emitted in the electron-emitting portion. By forming a coating material with a voltage of 3.5 to 5.0 eV and modifying the surface of the electron emitting part, changes in the work function due to gas adsorption become extremely small, so changes in the emission current due to gas adsorption are extremely small. Become.
また、イオンエツチング率（一定のイオン個数に対して
単位時間、単位面積あたりエツチングされる割合）が小
さいため、イオン衝撃による電子放出部の消耗あるいは
破壊が小さくなる。Furthermore, since the ion etching rate (the rate of etching per unit time and unit area for a given number of ions) is small, the wear or destruction of the electron emitting portion due to ion bombardment is reduced.
さらに、放電に対する強度が強いため、低真空での電子
放出が可能となる、電子放出部の抵抗が小さくなる、電
子放出部の島状構造体の固定が可能になる。Furthermore, since the strength against discharge is strong, electron emission in a low vacuum becomes possible, the resistance of the electron emission part becomes small, and the island-like structure of the electron emission part can be fixed.
［実施例］
以下、図面に示す実施例により本発明をさらに具体的に
説明する。[Example] Hereinafter, the present invention will be explained in more detail with reference to Examples shown in the drawings.
実施例１
第２図は本発明の電子放出素子の一実施例を示す説明図
である。同第２図において、石英ガラス基板からなる絶
縁性の基板１４上に、膜厚１０００人のＳｎＯ□からな
る薄膜１３と、膜厚１０００人のＮｉからなる電極１１
．１２を形成した。Example 1 FIG. 2 is an explanatory diagram showing an example of the electron-emitting device of the present invention. In FIG. 2, on an insulating substrate 14 made of a quartz glass substrate, a thin film 13 made of SnO□ with a film thickness of 1000 ml and an electrode 11 made of Ni with a film thickness of 1000 ml are deposited.
．． 12 was formed.
次いで、電極１１と電極１２の間に約３０Ｖの電圧を印
加し、薄膜１３に通電し、これにより発生するジュール
熱で薄膜１３を局所的に、電気的に高抵抗な状態にした
電子放出部１５を形成し、該電子放出ｇＢ１５の表面に
仕事関数４．０８ ｅＶのＴｉＢ、をスパッタにより膜
厚１０Ｇ人に成膜し、被膜材料１６を形成した電子放出
素子を得た。Next, a voltage of approximately 30 V is applied between the electrodes 11 and 12 to energize the thin film 13, and the Joule heat generated thereby locally places the thin film 13 in an electrically high resistance state to form an electron emitting section. TiB having a work function of 4.08 eV was formed on the surface of the electron-emitting gB15 to a thickness of 10 G to obtain an electron-emitting device with a coating material 16 formed thereon.
この様にして得られた電子放出素子の電子放出特性を測
定した結果、１６Ｖの印加電圧で平均放出電流０．４
終Ａ、放出電流の安定性±１０％程度の安定した電子放
出が得られ、電子放出時の放出効率（放出電流／電極間
電流）ｌｘｌＯ−’と非常に高い放出効率が得られた。As a result of measuring the electron emission characteristics of the electron-emitting device obtained in this way, the average emission current was 0.4 at an applied voltage of 16V.
At the final A, stable electron emission with an emission current stability of about ±10% was obtained, and an extremely high emission efficiency of 1 x lO-' was obtained during electron emission (emission current/interelectrode current).
実施例２
第３図は本発明の他の実施例を示す説明図である。同図
において、１４は絶縁性を有する基板、１７は電子放出
材料で形成される島状構造体、１１および１２は電気的
接続を得るための電極、１６は被膜材料である。Embodiment 2 FIG. 3 is an explanatory diagram showing another embodiment of the present invention. In the figure, 14 is an insulating substrate, 17 is an island structure made of an electron-emitting material, 11 and 12 are electrodes for obtaining electrical connection, and 16 is a coating material.
絶縁性の基板１４に石英ガラス基板を用い、電極１１と
電極１２に膜厚１０００人のＮｉをＥＢ蒸着し、フォト
リソグラフィー技術により、電子放出部１５を幅３００
１、間隔１０Ｂで形成した。A quartz glass substrate is used as the insulating substrate 14, a Ni film with a thickness of 1000 nm is deposited on the electrodes 11 and 12 by EB evaporation, and the electron emitting part 15 is formed with a width of 300 nm using photolithography.
1. Formed with a spacing of 10B.
次に、電極１１．１２間へ電子放出材料１７を、１次粒
径８０〜２００人のＳｎＯ２分散液（Ｓｎｏｗ： Ｉｇ
、溶剤： ＭＥＫ／シクロへキサノン＝ ３／１１
０００ｃｃ、ブチラール：１ｇ）をスピンコードして塗
布し、２５０℃で加熱処理して形成した。次いで、仕事
関数４．４ｅＶのＭｇＯをスパッタにより膜厚５０人に
成膜して被膜材料１６を形成した。Next, the electron emitting material 17 is placed between the electrodes 11 and 12 using a SnO2 dispersion (Snow: Ig
, Solvent: MEK/cyclohexanone = 3/11
000 cc, butyral: 1 g) was spin-coated and heat-treated at 250°C. Next, MgO having a work function of 4.4 eV was deposited to a thickness of 50 mm by sputtering to form a coating material 16.
この様にして得られた電子放出素子の電子放出特性を測
定した結果、１４Ｖの印加電圧で平均放出電流０．６
、Ａ、放出電流の安定性±１０％程度の安定した電子放
出が得られた。As a result of measuring the electron emission characteristics of the electron-emitting device obtained in this way, the average emission current was 0.6 at an applied voltage of 14V.
, A. Stability of emission current Stable electron emission with a stability of about ±10% was obtained.
［発明の効果］
以上説明したように、本発明の電子放出素子は電子放出
部の少なくとも電子が放射される領域の表面に被膜材料
を形成して構成されているため、■電子放出部が電子放
出により変化することなく、安定した放出電流が得られ
る。[Effects of the Invention] As explained above, since the electron-emitting device of the present invention is constructed by forming a coating material on the surface of at least the region where electrons are emitted in the electron-emitting region, ■ the electron-emitting region is A stable emission current can be obtained without changing due to emission.
■長寿命で安定した素子が得られる。■A stable device with long life can be obtained.
等の優れた効果がある。It has excellent effects such as
第１図は本発明の電子放出素子の一実施態様を示す説明
図、第２図および第３図は各々本発明の電子放出素子の
実施例を示す説明図および第４図は電子放出素子の従来
例を示す説明図である。
１ 、２ 、１１．１２−・・電極
３．１３−・・薄膜
４，１４・・・基板
５．１５−・・電子放出部
１６−・・被膜材料
１７−・・電子放出材料FIG. 1 is an explanatory diagram showing an embodiment of the electron-emitting device of the present invention, FIGS. 2 and 3 are explanatory diagrams showing an embodiment of the electron-emitting device of the present invention, and FIG. 4 is an explanatory diagram showing an embodiment of the electron-emitting device of the present invention. FIG. 2 is an explanatory diagram showing a conventional example. 1, 2, 11.12--Electrode 3.13--Thin film 4, 14--Substrate 5.15--Electron emitting portion 16--Coating material 17--Electron emitting material
Claims (1)
とも電子が放出される領域の表面に仕事関数３．５〜５
．０ｅＶの材料からなる被膜を形成してなることを特徴
とする電子放出素子。In the surface conduction electron-emitting device, at least the surface of the electron-emitting region of the electron-emitting part has a work function of 3.5 to 5.
．． An electron-emitting device characterized by forming a film made of a 0 eV material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP697888A JP2678757B2 (en) | 1988-01-18 | 1988-01-18 | Electron emitting device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP697888A JP2678757B2 (en) | 1988-01-18 | 1988-01-18 | Electron emitting device and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01186740A true JPH01186740A (en) | 1989-07-26 |
| JP2678757B2 JP2678757B2 (en) | 1997-11-17 |
Family
ID=11653282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP697888A Expired - Fee Related JP2678757B2 (en) | 1988-01-18 | 1988-01-18 | Electron emitting device and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2678757B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0696044A2 (en) * | 1994-08-02 | 1996-02-07 | Canon Kabushiki Kaisha | Electron-emitting device, electron source and image-forming apparatus using the device, and manufacture methods thereof |
| EP0704875A1 (en) * | 1994-09-29 | 1996-04-03 | Canon Kabushiki Kaisha | Manufacture methods of electron-emitting device, electron source, and image-forming apparatus |
| EP0757371A2 (en) * | 1995-08-03 | 1997-02-05 | Canon Kabushiki Kaisha | Electron-emitting device and electron source and image-forming apparatus using the same as well as method of manufacturing the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2715312B2 (en) | 1988-01-18 | 1998-02-18 | キヤノン株式会社 | Electron emitting device, method of manufacturing the same, and image display device using the electron emitting device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5086265A (en) * | 1973-11-30 | 1975-07-11 | ||
| JPS5661733A (en) * | 1979-10-24 | 1981-05-27 | Hitachi Ltd | Field emission cathode and its manufacture |
-
1988
- 1988-01-18 JP JP697888A patent/JP2678757B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5086265A (en) * | 1973-11-30 | 1975-07-11 | ||
| JPS5661733A (en) * | 1979-10-24 | 1981-05-27 | Hitachi Ltd | Field emission cathode and its manufacture |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0696044A2 (en) * | 1994-08-02 | 1996-02-07 | Canon Kabushiki Kaisha | Electron-emitting device, electron source and image-forming apparatus using the device, and manufacture methods thereof |
| EP0696044A3 (en) * | 1994-08-02 | 1997-04-23 | Canon Kk | Electron-emitting device, electron source and image-forming apparatus using the device, and manufacture methods thereof |
| US6147449A (en) * | 1994-08-02 | 2000-11-14 | Canon Kabushiki Kaisha | Electron-emitting device, with coating film made of heat-resistant material and electron source and image-forming apparatus using the device and manufacture method thereof |
| US6171162B1 (en) | 1994-08-02 | 2001-01-09 | Canon Kabushiki Kaisha | Electron-emitting device, electron source and image-forming apparatus using the device, and manufacture methods thereof |
| EP0704875A1 (en) * | 1994-09-29 | 1996-04-03 | Canon Kabushiki Kaisha | Manufacture methods of electron-emitting device, electron source, and image-forming apparatus |
| US5861227A (en) * | 1994-09-29 | 1999-01-19 | Canon Kabushiki Kaisha | Methods and manufacturing electron-emitting device, electron source, and image-forming apparatus |
| EP0757371A2 (en) * | 1995-08-03 | 1997-02-05 | Canon Kabushiki Kaisha | Electron-emitting device and electron source and image-forming apparatus using the same as well as method of manufacturing the same |
| EP0757371A3 (en) * | 1995-08-03 | 1997-04-09 | Canon Kk | Electron-emitting device and electron source and image-forming apparatus using the same as well as method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2678757B2 (en) | 1997-11-17 |
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