JP2678757B2 - Electron emitting device and method of manufacturing the same - Google Patents
Electron emitting device and method of manufacturing the sameInfo
- Publication number
- JP2678757B2 JP2678757B2 JP697888A JP697888A JP2678757B2 JP 2678757 B2 JP2678757 B2 JP 2678757B2 JP 697888 A JP697888 A JP 697888A JP 697888 A JP697888 A JP 697888A JP 2678757 B2 JP2678757 B2 JP 2678757B2
- Authority
- JP
- Japan
- Prior art keywords
- electron
- emitting device
- emitting
- thin film
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/316—Cold cathodes, e.g. field-emissive cathode having an electric field parallel to the surface, e.g. thin film cathodes
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- Cold Cathode And The Manufacture (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、電子放出素子に関し、特に安定した放出電
流を得ることのできる電子放出素子に関する。TECHNICAL FIELD The present invention relates to an electron-emitting device, and more particularly to an electron-emitting device capable of obtaining a stable emission current.
［従来の技術］ 従来、簡単な構造で電子の放出が得られる素子とし
て、例えば、エム アイ エリンソン（M.I.Elinson）
等によって発表された冷陰極素子が知られている。［ラ
ジオ エンジニアリング エレクトロン フィジィッス
（Radio Eng.Electron.Phys.）第10巻,1290〜1296頁,19
65年］ これは、基板上に形成された小面積の薄膜に、膜面に
平行に電流を流すことにより、電子放出が生ずる現象を
利用するもので、一般には表面伝導形放出素子と呼ばれ
ている。[Prior art] Conventionally, as an element which can obtain electron emission with a simple structure, for example, MIElinson
And the like are known. [Radio Engineering Electron Phys. Vol. 10, 1290-1296, 19
65 years] This utilizes the phenomenon that electron emission occurs when a current flows through a small-area thin film formed on a substrate in parallel with the film surface, and is generally called a surface conduction electron-emitting device. ing.
この表面伝導形放出素子としては、前記エリンソン等
により開発されたSnO2（Sb）薄膜を用いたもの、Au薄膜
によるもの［ジー・ディトマー“スイン ソリド フィ
ルムス”（G.Dittmer:“Thin Solid Films"）,9巻,317
頁，（1972年）］、ITO薄膜によるもの［エム ハート
ウェル アンド シー ジー フォンスタッド“アイ
イー イー イー トランス”イー ディー コンフ
（M.Hartwell and C.G.Fonstad:“IEEE Trans.ED Con
f."）519頁，（1975年）］、カーボン薄膜によるもの
［荒木久他：“真空",第26巻，第１号,22頁，（1983
年）］などが報告されている。Examples of the surface conduction electron-emitting device include a device using a SnO 2 (Sb) thin film developed by Elinson et al. And a device using an Au thin film [G. Dittmer: “Thin Solid Films”. "), Volume 9, 317
Page, (1972)], by ITO thin film [M Hartwell and CJ Vonstad “I
M. Hartwell and CGFonstad: “IEEE Trans.ED Con
f. ") p. 519, (1975)], using a carbon thin film [Hisashi Araki et al .:" Vacuum ", Vol. 26, No. 1, p. 22, (1983)
Year)].
これらの表面伝導形放出素子の典型的な素子構成を第
４図に示す。同第４図において、１および２は電気的接
続を得る為の電極、３は電子放出材料で形成される薄
膜、４は基板、５は電子放出部を示す。FIG. 4 shows a typical device configuration of these surface conduction electron-emitting devices. In FIG. 4, 1 and 2 are electrodes for obtaining electrical connection, 3 is a thin film made of an electron emitting material, 4 is a substrate, and 5 is an electron emitting portion.
従来、これらの表面伝導形放出素子に於ては、電子放
出を行なう前にあらかじめフォーミングと呼ばれる通電
処理によって電子放出部を形成する。即ち、前記電極１
と電極２の間に電圧を印加する事により、薄膜３に通電
し、これにより発生するジュール熱で薄膜３を局所的に
破壊，変形もしくは変質せしめ、電気的に高抵抗な状態
にした電子放出部５を形成することにより電子放出機能
を得ている。Conventionally, in these surface conduction electron-emitting devices, before emitting electrons, an electron-emitting portion is formed in advance by an energization process called forming. That is, the electrode 1
By applying a voltage between the electrode and the electrode 2, the thin film 3 is energized, and the generated Joule heat causes the thin film 3 to be locally destroyed, deformed or deteriorated, thereby emitting electrons in an electrically high resistance state. The electron emission function is obtained by forming the portion 5.
しかしながら、上記の様な従来の通電加熱によるフォ
ーミング処理は、本質的には通電のジュール熱による膜
の部分的な破壊又は変質そのものなので、その処理自体
が不安定で再現性に乏しい為に、作成された素子毎に電
子放出特性にばらつきが生じ、又素子の特性を制御して
作成するということが不可能であった。However, the conventional forming process by the above-mentioned energization heating is essentially a partial destruction or deterioration of the film due to Joule heat of energization, so that the process itself is unstable and poor in reproducibility. The electron emission characteristics of the produced devices vary, and it is impossible to control the device characteristics to create the devices.
［発明が解決しようとする課題］ 以上のような問題点があるため、従来の表面伝導形電
子放出素子は素子構造が簡単であるという利点があるに
もかかわらず、産業上積極的に応用されるには至ってい
なかった。[Problems to be Solved by the Invention] Due to the above problems, the conventional surface conduction electron-emitting device has an advantage that the device structure is simple, but is actively applied industrially. It has not been reached.
本発明は、上記の様な従来例の欠点を除去するために
なされたものであり、表面伝導形電子放出素子におい
て、フォーミング処理により得られる電子放出部の表面
改質を施すことにより、特性のばらつきが少なく、低真
空でも安定で寿命の長い電子放出素子を提供することを
目的とする。The present invention has been made in order to eliminate the drawbacks of the conventional example as described above, and in the surface conduction electron-emitting device, by subjecting the surface of the electron-emitting portion obtained by forming treatment to surface modification, It is an object of the present invention to provide an electron-emitting device that has little variation and is stable even in a low vacuum and has a long life.
［課題を解決するための手段］ すなわち、本発明は、電極間に、電子放出部を有する
薄膜を備える電子放出素子において、前記電子放出部の
少なくとも電子が放出される領域の表面に、CuO、Mo
O3、Ta2O5、TiB2、TaB2、MnB2の中から選ばれた材料か
らなる被膜を有することを特徴とする電子放出素子であ
る。[Means for Solving the Problem] That is, the present invention is an electron-emitting device including a thin film having an electron-emitting portion between electrodes, and CuO, at least on the surface of the electron-emitting region of the electron-emitting portion, Mo
An electron-emitting device having a coating film made of a material selected from O 3 , Ta 2 O 5 , TiB 2 , TaB 2 , and MnB 2 .
また、本発明は、電極間に、電子放出部を有する薄膜
を備える電子放出素子の製造方法において、電子放出部
を形成した後、該電子放出部の少なくとも電子が放出さ
れる領域の表面に、CuO、MoO3、Ta2O5、TiB2、TaB2、Mn
B2の中から選ばれた材料からなる被膜を形成する工程を
有することを特徴とする電子放出素子の製造方法であ
る。Further, the present invention is, in a method for manufacturing an electron-emitting device including a thin film having an electron-emitting portion between electrodes, after forming the electron-emitting portion, at least the surface of the electron-emitting region of the electron-emitting portion, CuO, MoO 3 , Ta 2 O 5 , TiB 2 , TaB 2 , Mn
A method for manufacturing an electron-emitting device, comprising a step of forming a coating film made of a material selected from B 2 .
以下、図面に基づいて本発明を詳細に説明する。 Hereinafter, the present invention will be described in detail with reference to the drawings.
第１図は本発明の電子放出素子の一実施態様を示す説
明図である。同第１図において、14は絶縁性を有する基
板、13は電子放出材料で形成される薄膜、11および12は
電気的接続を得るための電極、16は仕事関数3.5〜5.0eV
のCuO、MoO3、Ta2O5、TiB2、TaB2、MnB2の中から選ばれ
た材料からなる被膜（以下、被膜材料と記す）である。
本発明の電子放出素子は、絶縁性を有する基板14上に対
向して設けられた一対の電極11,12間に、電子放出材料
で形成された薄膜13を設け、該薄膜13を通電加熱処理す
ることにより形成された電子放出部15の少なくとも電子
が放出される領域の表面に被膜材料16を形成してなるも
のである。FIG. 1 is an explanatory view showing one embodiment of the electron-emitting device of the present invention. In FIG. 1, 14 is an insulating substrate, 13 is a thin film made of an electron emitting material, 11 and 12 are electrodes for obtaining electrical connection, and 16 is a work function of 3.5 to 5.0 eV.
Of CuO, MoO 3 , Ta 2 O 5 , TiB 2 , TaB 2 , and MnB 2 (hereinafter, referred to as a coating material).
The electron-emitting device of the present invention is such that a thin film 13 made of an electron-emitting material is provided between a pair of electrodes 11 and 12 which are provided on a substrate 14 having an insulating property so as to face each other, and the thin film 13 is subjected to an electric heating treatment. The coating material 16 is formed on the surface of at least the electron-emitting region of the electron-emitting portion 15 thus formed.
次に、本発明の電子放出素子の製造方法について説明
する。第１図において、先ず、洗浄されたガラス板から
なる基板14上に蒸着もしくはスパッタにより、SnO2,In2
O3,PbO等の金属酸化物、Au,Ag,Pt等の金属、カーボンそ
の他の各種半導体などの電子放出材料からなる薄膜を成
膜し、次いで、フォトリソグラフィー技術により電子放
出部が形成されるネック部を有する電子放出材料の薄膜
13を形成する。Next, a method for manufacturing the electron-emitting device of the present invention will be described. In FIG. 1, first, SnO 2 , In 2 is deposited on a cleaned glass plate substrate 14 by vapor deposition or sputtering.
A thin film made of an electron-emitting material such as a metal oxide such as O 3 or PbO, a metal such as Au, Ag, or Pt, carbon or various semiconductors is formed, and then an electron-emitting portion is formed by photolithography technology. Thin film of electron emission material having neck portion
Form 13.
次いで、前記薄膜13に形成される電子放出部と電気的
接続を得る電極11,12をマスク蒸着によりNi,Pt,Al,Cu,A
uなどの通常の導電性材料により形成する。Next, the electrodes 11 and 12 for electrically connecting with the electron-emitting portion formed on the thin film 13 are Ni, Pt, Al, Cu, and A by mask vapor deposition.
It is formed of a usual conductive material such as u.
前記電極11と電極12の間に電圧を印加することによ
り、薄膜13に通電し、これにより発生するジュール熱で
薄膜13を局所的に破壊、変形もしくは変質せしめ、電気
的に高抵抗な状態にした電子放出部15を形成する。By applying a voltage between the electrode 11 and the electrode 12, the thin film 13 is energized, and the Joule heat generated thereby locally destroys, deforms or alters the thin film 13, resulting in an electrically high resistance state. The electron emitting portion 15 is formed.
前記薄膜13に形成された電子放出部15の少なくとも電
子が放射される領域の表面に、EB蒸着、抵抗加熱蒸着、
スパッタなどの真空蒸着により、仕事関数3.5〜5.0eVの
CuO,MoO3,Ta2O5,TiB2,TaB2,MnB2などの被膜材料を十数
Å〜数百Åの膜厚に成膜して形成することにより電子放
出素子を得ることができる。On the surface of at least the electron emitting region of the electron emitting portion 15 formed in the thin film 13, EB vapor deposition, resistance heating vapor deposition,
By vacuum deposition such as sputtering, work function of 3.5 ~ 5.0 eV
An electron-emitting device can be obtained by depositing a film material such as CuO, MoO 3 , Ta 2 O 5 , TiB 2 , TaB 2 , or MnB 2 to a film thickness of a dozen Å to several hundred Å .
なお、被膜材料の膜厚は通常300Å以下、好ましくは1
0Å〜100Åの範囲が望ましい。The film thickness of the coating material is usually 300 Å or less, preferably 1
A range of 0Å to 100Å is desirable.
また、被膜材料は仕事関数3.5〜5.0eVの材料であれば
よく、例えば前記の酸化物、ホウ化物等が挙げられ、仕
事関数3.5eV未満では低真空の状態下では、実質上仕事
関数の変化があり、放出電流のゆらぎが大きく安定性が
劣る。5.0eVを越えると仕事関数が大きく放出電流が非
常に小さくなるなどの問題があるので好ましくない。
又、特に仕事関数4.0〜4.5eVの間であると、より良好な
結果を示すことが認められた。Further, the coating material may be a material having a work function of 3.5 to 5.0 eV, and examples thereof include the above-mentioned oxides and borides. If the work function is less than 3.5 eV, under a low vacuum state, the work function changes substantially. Therefore, the fluctuation of the emission current is large and the stability is poor. If it exceeds 5.0 eV, there is a problem that the work function becomes large and the emission current becomes extremely small, which is not preferable.
It was also found that particularly when the work function was between 4.0 and 4.5 eV, better results were shown.
［作用］ 本発明の電子放出素子は、対向する電極間に設けられ
た電子放出材料からなる薄膜に電子放出部を形成し、該
電子放出部の少なくとも電子が放出される領域の表面に
仕事関数3.5〜5.0eVのCuO、MoO3、Ta2O5、TiB2、TaB2、
MnB2の中から選ばれた被覆材料を形成し、電子放出部の
表面を改質することにより、ガス吸着によってうける仕
事関数の変化が極めて小さくなるため、ガス吸着による
放出電流の変動が極めて小さくなる。[Operation] In the electron-emitting device of the present invention, the electron-emitting portion is formed in the thin film made of the electron-emitting material provided between the opposing electrodes, and the work function is provided on at least the surface of the electron-emitting portion where the electron is emitted. 3.5-5.0 eV CuO, MoO 3 , Ta 2 O 5 , TiB 2 , TaB 2 ,
By forming a coating material selected from MnB 2 and modifying the surface of the electron emission part, the change in work function due to gas adsorption becomes extremely small, so the variation in emission current due to gas adsorption is extremely small. Become.
また、イオンエッチング率（一定のイオン個数に対し
て単位時間、単位面積あたりエッチングされる割合）が
小さいため、イオン衝撃による電子放出部の消耗あるい
は破壊が小さくなる。Further, since the ion etching rate (the rate of etching per unit time and unit area for a certain number of ions) is small, the electron emission portion is less consumed or destroyed due to ion bombardment.
さらに、放電に対する強度が強いため、低真空での電
子放出が可能となる、電子放出部の抵抗が小さくなる、
電子放出部の島状構造体の固定が可能になる。Further, since the strength against discharge is strong, it becomes possible to emit electrons in a low vacuum, and the resistance of the electron emitting portion becomes small.
It is possible to fix the island-shaped structure of the electron emitting portion.
［実施例］ 以下、図面に示す実施例により本発明をさらに具体的
に説明する。[Examples] Hereinafter, the present invention will be described more specifically with reference to Examples shown in the drawings.
実施例１ 第２図は本発明の電子放出素子の一実施例を示す説明
図である。同第２図において、石英ガラス基板からなる
絶縁性の基板14上に、膜厚1000ÅのSnO2からなる薄膜13
と、膜厚1000ÅのNiからなる電極11,12を形成した。Embodiment 1 FIG. 2 is an explanatory view showing an embodiment of the electron-emitting device of the present invention. In FIG. 2 , a thin film 13 made of SnO 2 having a film thickness of 1000 Å is formed on an insulating substrate 14 made of a quartz glass substrate.
Then, the electrodes 11 and 12 made of Ni and having a film thickness of 1000 Å were formed.
次いで、電極11と電極12の間に約30Vの電圧を印加
し、薄膜13に通電し、これにより発生するジュール熱で
薄膜13を局所的に、電気的に高抵抗な状態にした電子放
出部15を形成し、該電子放出部15の表面に仕事関数4.08
eVのTiB2をスパッタにより膜厚100Åに成膜し、被膜材
料16を形成した電子放出素子を得た。Then, a voltage of about 30 V is applied between the electrodes 11 and 12, the thin film 13 is energized, and the Joule heat generated thereby locally brings the thin film 13 into an electrically high-resistance electron-emitting portion. 15 is formed, and a work function of 4.08 is formed on the surface of the electron emitting portion 15.
An eV TiB 2 film having a film thickness of 100 Å was formed by sputtering to obtain an electron-emitting device having the coating material 16.
この様にして得られた電子放出素子の電子放出特性を
測定した結果、16Vの印加電圧で平均放出電流0.4μＡ、
放出電流の安定性±10％程度の安定した電子放出が得ら
れ、電子放出時の放出効率（放出電流／電極間電流）１
×10-4と非常に高い放出効率が得られた。As a result of measuring the electron emission characteristics of the electron-emitting device thus obtained, an average emission current of 0.4 μA at an applied voltage of 16 V,
Stable electron emission of about ± 10% of emission current is obtained, and emission efficiency at the time of electron emission (emission current / inter-electrode current) 1
A very high release efficiency of × 10 -4 was obtained.
［発明の効果］ 以上説明したように、本発明の電子放出素子は電子放
出部の少なくとも電子が放射される領域の表面に被膜材
料を形成して構成されているため、 電子放出部が電子放出により変化することなく、安定
した放出電流が得られる。EFFECTS OF THE INVENTION As described above, the electron-emitting device of the present invention is formed by forming the coating material on at least the surface of the electron-emitting portion in the region where electrons are emitted. A stable emission current can be obtained without any change.
長寿命で安定した素子が得られる。A long life and stable element can be obtained.
等の優れた効果がある。And other excellent effects.
第１図は本発明の電子放出素子の一実施態様を示す説明
図、第２図および第３図は各々本発明の電子放出素子の
実施例を示す説明図および第４図は電子放出素子の従来
例を示す説明図である。 1,2,11,12……電極 3,13……薄膜 4,14……基板 5,15……電子放出部 16……被膜材料 17……電子放出材料FIG. 1 is an explanatory view showing an embodiment of the electron-emitting device of the present invention, FIGS. 2 and 3 are explanatory views showing an embodiment of the electron-emitting device of the present invention, and FIG. 4 is a view of the electron-emitting device. It is explanatory drawing which shows a prior art example. 1,2,11,12 ...... Electrode 3,13 ...... Thin film 4,14 ...... Substrate 5,15 …… Electron emission part 16 …… Coating material 17 …… Electron emission material
───────────────────────────────────────────────────── フロントページの続き (72)発明者 武田 俊彦 東京都大田区下丸子３丁目30番２号 キ ヤノン株式会社内 (56)参考文献 特開 昭56−61733（ＪＰ，Ａ) 特開 昭50−86265（ＪＰ，Ａ) 特公 昭44−32247（ＪＰ，Ｂ１) ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Toshihiko Takeda 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (56) References JP-A-56-61733 (JP, A) JP-A-SHO 50 -86265 (JP, A) JP-B-44-32247 (JP, B1)
Claims (7)
る電子放出素子において、前記電子放出部の少なくとも
電子が放出される領域の表面に、CuO、MoO3、Ta2O5、Ti
B2、TaB2、MnB2の中から選ばれた材料からなる被膜を有
することを特徴とする電子放出素子。1. An electron-emitting device comprising a thin film having an electron-emitting portion between electrodes, wherein CuO, MoO 3 , Ta 2 O 5 , Ti is formed on the surface of at least the electron-emitting region of the electron-emitting portion.
An electron-emitting device having a coating film made of a material selected from B 2 , TaB 2 , and MnB 2 .
的な高抵抗部であり、前記被膜は、該高抵抗部の少なく
とも電子が放出される領域に形成されている請求項１記
載の電子放出素子。2. The electron emitting portion is a local high resistance portion formed in a thin film, and the film is formed in at least a region of the high resistance portion where electrons are emitted. Electron-emitting device.
形または変質した部分である請求項２記載の電子放出素
子。3. The electron-emitting device according to claim 2, wherein the high resistance portion is a locally broken, deformed or altered portion of the thin film.
る電子放出素子の製造方法において、電子放出部を形成
した後、該電子放出部の少なくとも電子が放出される領
域の表面に、CuO、MoO3、Ta2O5、TiB2、TaB2、MnB2の中
から選ばれた材料からなる被膜を形成する工程を有する
ことを特徴とする電子放出素子の製造方法。4. A method of manufacturing an electron-emitting device comprising a thin film having an electron-emitting portion between electrodes, wherein after forming the electron-emitting portion, CuO is formed on at least the surface of the electron-emitting portion where the electron is emitted. , MoO 3 , Ta 2 O 5 , TiB 2 , TaB 2 , and MnB 2 are included in the method for producing an electron-emitting device.
的な高抵抗部である請求項４記載の電子放出素子の製造
方法。5. The method for manufacturing an electron-emitting device according to claim 4, wherein the electron-emitting portion is a local high resistance portion formed in a thin film.
形または変質した部分である請求項５記載の電子放出素
子の製造方法。6. The method of manufacturing an electron-emitting device according to claim 5, wherein the high resistance portion is a portion where the thin film is locally destroyed, deformed or altered.
により行われる請求項５または６記載の電子放出素子の
製造方法。7. The method of manufacturing an electron-emitting device according to claim 5, wherein the formation of the high resistance portion is performed by energizing the thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP697888A JP2678757B2 (en) | 1988-01-18 | 1988-01-18 | Electron emitting device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP697888A JP2678757B2 (en) | 1988-01-18 | 1988-01-18 | Electron emitting device and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01186740A JPH01186740A (en) | 1989-07-26 |
| JP2678757B2 true JP2678757B2 (en) | 1997-11-17 |
Family
ID=11653282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP697888A Expired - Fee Related JP2678757B2 (en) | 1988-01-18 | 1988-01-18 | Electron emitting device and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2678757B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2715312B2 (en) | 1988-01-18 | 1998-02-18 | キヤノン株式会社 | Electron emitting device, method of manufacturing the same, and image display device using the electron emitting device |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3332676B2 (en) * | 1994-08-02 | 2002-10-07 | キヤノン株式会社 | Electron emitting element, electron source, image forming apparatus, and method of manufacturing them |
| CA2159292C (en) * | 1994-09-29 | 2000-12-12 | Sotomitsu Ikeda | Manufacture methods of electron-emitting device, electron source, and image-forming apparatus |
| JP3174999B2 (en) * | 1995-08-03 | 2001-06-11 | キヤノン株式会社 | Electron emitting element, electron source, image forming apparatus using the same, and method of manufacturing the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5431782B2 (en) * | 1973-11-30 | 1979-10-09 | ||
| JPS5661733A (en) * | 1979-10-24 | 1981-05-27 | Hitachi Ltd | Field emission cathode and its manufacture |
-
1988
- 1988-01-18 JP JP697888A patent/JP2678757B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2715312B2 (en) | 1988-01-18 | 1998-02-18 | キヤノン株式会社 | Electron emitting device, method of manufacturing the same, and image display device using the electron emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01186740A (en) | 1989-07-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |