JPH0118149B2 - - Google Patents

Info

Publication number
JPH0118149B2
JPH0118149B2 JP61252369A JP25236986A JPH0118149B2 JP H0118149 B2 JPH0118149 B2 JP H0118149B2 JP 61252369 A JP61252369 A JP 61252369A JP 25236986 A JP25236986 A JP 25236986A JP H0118149 B2 JPH0118149 B2 JP H0118149B2
Authority
JP
Japan
Prior art keywords
reaction
gas
low
insulating film
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP61252369A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63105970A (ja
Inventor
Kazuo Maeda
Toku Tokumasu
Toshihiko Fukuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Japan Inc
Original Assignee
Applied Materials Japan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Japan Inc filed Critical Applied Materials Japan Inc
Priority to JP25236986A priority Critical patent/JPS63105970A/ja
Publication of JPS63105970A publication Critical patent/JPS63105970A/ja
Publication of JPH0118149B2 publication Critical patent/JPH0118149B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP25236986A 1986-10-23 1986-10-23 気相成長方法 Granted JPS63105970A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25236986A JPS63105970A (ja) 1986-10-23 1986-10-23 気相成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25236986A JPS63105970A (ja) 1986-10-23 1986-10-23 気相成長方法

Publications (2)

Publication Number Publication Date
JPS63105970A JPS63105970A (ja) 1988-05-11
JPH0118149B2 true JPH0118149B2 (enrdf_load_stackoverflow) 1989-04-04

Family

ID=17236342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25236986A Granted JPS63105970A (ja) 1986-10-23 1986-10-23 気相成長方法

Country Status (1)

Country Link
JP (1) JPS63105970A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0697158A (ja) * 1991-09-12 1994-04-08 Semiconductor Energy Lab Co Ltd 光気相反応方法
CN100465742C (zh) 1992-08-27 2009-03-04 株式会社半导体能源研究所 有源矩阵显示器
JP3065825B2 (ja) 1992-10-21 2000-07-17 株式会社半導体エネルギー研究所 レーザー処理方法
JP3455171B2 (ja) 2000-08-30 2003-10-14 宮崎沖電気株式会社 真空紫外光ｃｖｄによる層間絶縁膜の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6028235A (ja) * 1983-07-26 1985-02-13 Nec Corp 半導体装置の製造方法
JPS61163633A (ja) * 1985-01-16 1986-07-24 Ushio Inc 放電灯による表面処理方法
JPS61163634A (ja) * 1985-01-16 1986-07-24 Ushio Inc 放電灯による表面処理方法

Also Published As

Publication number Publication date
JPS63105970A (ja) 1988-05-11

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