JPH036653B2 - - Google Patents

Info

Publication number
JPH036653B2
JPH036653B2 JP18372884A JP18372884A JPH036653B2 JP H036653 B2 JPH036653 B2 JP H036653B2 JP 18372884 A JP18372884 A JP 18372884A JP 18372884 A JP18372884 A JP 18372884A JP H036653 B2 JPH036653 B2 JP H036653B2
Authority
JP
Japan
Prior art keywords
gas
substrate
thin film
raw material
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18372884A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6163020A (ja
Inventor
Keiji Horioka
Tsunetoshi Arikado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP18372884A priority Critical patent/JPS6163020A/ja
Publication of JPS6163020A publication Critical patent/JPS6163020A/ja
Publication of JPH036653B2 publication Critical patent/JPH036653B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP18372884A 1984-09-04 1984-09-04 薄膜形成方法 Granted JPS6163020A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18372884A JPS6163020A (ja) 1984-09-04 1984-09-04 薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18372884A JPS6163020A (ja) 1984-09-04 1984-09-04 薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS6163020A JPS6163020A (ja) 1986-04-01
JPH036653B2 true JPH036653B2 (enrdf_load_stackoverflow) 1991-01-30

Family

ID=16140923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18372884A Granted JPS6163020A (ja) 1984-09-04 1984-09-04 薄膜形成方法

Country Status (1)

Country Link
JP (1) JPS6163020A (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5427824A (en) * 1986-09-09 1995-06-27 Semiconductor Energy Laboratory Co., Ltd. CVD apparatus
KR910003742B1 (ko) * 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
US4906585A (en) * 1987-08-04 1990-03-06 Siemens Aktiengesellschaft Method for manufacturing wells for CMOS transistor circuits separated by insulating trenches
JP2883333B2 (ja) * 1988-01-12 1999-04-19 株式会社東芝 半導体装置の製造方法
US5013691A (en) * 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
DE69107101T2 (de) 1990-02-06 1995-05-24 Semiconductor Energy Lab Verfahren zum Herstellen eines Oxydfilms.
JPH0697158A (ja) * 1991-09-12 1994-04-08 Semiconductor Energy Lab Co Ltd 光気相反応方法
CN100465742C (zh) 1992-08-27 2009-03-04 株式会社半导体能源研究所 有源矩阵显示器
US7465679B1 (en) 1993-02-19 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Insulating film and method of producing semiconductor device
KR0143873B1 (ko) * 1993-02-19 1998-08-17 순페이 야마자끼 절연막 및 반도체장치 및 반도체 장치 제조방법
JP3637069B2 (ja) 1993-03-12 2005-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
JPS6163020A (ja) 1986-04-01

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term