JPH01179796A - Seed crystal for producing non-dislocation gaas single crystal - Google Patents
Seed crystal for producing non-dislocation gaas single crystalInfo
- Publication number
- JPH01179796A JPH01179796A JP125388A JP125388A JPH01179796A JP H01179796 A JPH01179796 A JP H01179796A JP 125388 A JP125388 A JP 125388A JP 125388 A JP125388 A JP 125388A JP H01179796 A JPH01179796 A JP H01179796A
- Authority
- JP
- Japan
- Prior art keywords
- seed crystal
- crystal
- raw material
- dislocation
- material melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 113
- 239000002994 raw material Substances 0.000 claims abstract description 32
- 238000002844 melting Methods 0.000 claims abstract description 24
- 230000008018 melting Effects 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 20
- 230000007423 decrease Effects 0.000 claims description 3
- 238000005204 segregation Methods 0.000 claims description 2
- 230000006866 deterioration Effects 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract 1
- 239000000155 melt Substances 0.000 description 9
- 239000007788 liquid Substances 0.000 description 7
- 210000001787 dendrite Anatomy 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000009826 distribution Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、Ｉｎ添加の無転位ＧａＡｓ単結晶をＬＥＣ法
により製造するときに用いる種結晶に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a seed crystal used when producing an In-doped dislocation-free GaAs single crystal by the LEC method.
（従来の技術）
ＬＥＣ法によりアンドープＧａＡｓ単結晶には、通常１
０．０００〜５０． ＯＱＯｃｍ −２の転位が存在す
る。このような結晶より切り出したウェハを基板として
、ＦＥＴ、レーザー等を作製すると、上記転位によりデ
バイスの特性が大きく低下する。転位密度を低減するた
めには、Ｉｎを添加する方法が提案された（Ｊａｃｏｂ
。(Prior art) Undoped GaAs single crystal by LEC method usually has 1
0.000~50. There are OQOcm −2 dislocations. When FETs, lasers, etc. are manufactured using a wafer cut from such a crystal as a substrate, the characteristics of the device are greatly deteriorated due to the above-mentioned dislocations. In order to reduce the dislocation density, a method of adding In was proposed (Jacob
.
ＳＳｅｍ１−Ｉｎ５ｕｌａｔｉｎ ｍ −Ｖ Ｍ ａｔ
ｅｒｉａｌｓ Ｅｖｉａｎ（１９８２） ５ｈｉｖａ
Ｐｕｂｌｉｓｈｉｎｇ Ｕ Ｋ 、 ｐ 、 ２ ）
。その後Ｉｎ添加法で得たウェハも、その周辺部には５
ｌｉｐと呼ぶ線状転位が存在し、中心部にも転位密度の
高い領域が存在することが指摘された（Ｊｏｒｄａｎ、
Ｊ、Ｃｒｙｓｔａｌ Ｇｒｏｗｔｈ ７６ （１９８６
）ｐ、２４３〜２６２）。この中心部の転位は、種結晶
からの伝播転位とその転位から増殖したものとが考えら
れる。これらの転位を無くすために、種付は後に成長結
晶を一度細長く絞るネッキング法を用いたり、無転位の
種結晶を用いたりする。しかし、無転位の種結晶を用い
ても、伝播転位を十分低下させる事はできない。何故な
らば、種結晶を棒状に切り出すときの加工歪や、種結晶
か高温雰囲気にさらされることにより、融液に接触する
までに種結晶の下端表面が劣化し、転位の源となる。SSem1-In5ulatin m-V M at
erials Evian (1982) 5hiva
Publishing UK, p. 2)
. Later, wafers obtained by the In addition method also had 5
It was pointed out that there are linear dislocations called lips, and that there is also a region with high dislocation density in the center (Jordan,
J.Crystal Growth 76 (1986
) p, 243-262). The dislocations in the center are thought to be propagated dislocations from the seed crystal and propagated from the dislocations. In order to eliminate these dislocations, seeding is performed by using a necking method in which the grown crystal is narrowed once, or by using a dislocation-free seed crystal. However, even if a dislocation-free seed crystal is used, propagating dislocations cannot be sufficiently reduced. This is because the lower end surface of the seed crystal deteriorates by the time it comes into contact with the melt due to processing strain when cutting the seed crystal into a rod shape and exposure of the seed crystal to a high temperature atmosphere, which becomes a source of dislocations.
そこで、種結晶の下端表面を僅かに融解して清浄な表面
を露出させた後、結晶成長を開始した。この場合も、原
料融液の温度が種結晶の融点より高すぎると、種結晶は
融解劣化して転位は逆に増加する。Therefore, after slightly melting the lower end surface of the seed crystal to expose a clean surface, crystal growth was started. Also in this case, if the temperature of the raw material melt is too high than the melting point of the seed crystal, the seed crystal will melt and deteriorate, and the number of dislocations will increase.
ところで、ＬＥＣ法により結晶成長を開始する時の原料
融液の温度調節は、通常、多結晶原料を融解した後、−
度徐冷して樹枝状結晶を生じさせ、再び温度を徐々に上
昇させて、樹枝状結晶が融解するときに、原料融液温度
が樹枝状結晶の融点にあるとみなし、この温度を原料融
液の制御温度とした。しかし、このような方法では融液
の温度を精確に制御することができず、種結晶を融液に
接触するときに、原料融液温度が高いと種結晶を融解劣
化するし、逆に、過冷却状態となると種結晶の先端に多
結晶が析出することを避けることができなかった。By the way, when starting crystal growth by the LEC method, the temperature of the raw material melt is usually adjusted after melting the polycrystalline raw material.
The temperature is gradually increased again to form dendrites, and when the dendrites melt, the temperature of the raw material melt is considered to be at the melting point of the dendrites, and this temperature is set as the melting point of the raw material melt. The temperature was set as the control temperature of the liquid. However, with this method, it is not possible to precisely control the temperature of the melt, and when the seed crystal is brought into contact with the melt, if the temperature of the raw material melt is high, the seed crystal will melt and deteriorate; When supercooled, it was impossible to avoid the precipitation of polycrystals at the tips of the seed crystals.
（発明が解決しようとする問題点）
本発明は、上記の問題点を解消し、原料融液温度が融点
からずれても、種結晶を融解劣化したり、多結晶を析出
させることもなく、伝播転位の発生を防止することので
きる無転位ＧａＡｓ単結晶製造用の種結晶を提供しよう
とするものである。(Problems to be Solved by the Invention) The present invention solves the above problems, and even if the raw material melt temperature deviates from the melting point, the seed crystal will not melt and deteriorate or polycrystals will not precipitate. The present invention aims to provide a seed crystal for producing a dislocation-free GaAs single crystal that can prevent the occurrence of propagating dislocations.
（問題点を解決するための手段）
本発明は、Ｉｎ添加の無転位ＧａＡｓ単結晶をＬＥＣ法
により製造するための種結晶において、原料融液と初め
に接触する種結晶の端部の融点を原料融液の表面温度よ
り僅かに低くなるように、該端部のＩｎ濃度を設定し、
種結晶の他端部に向かってＩｎ濃度が低下するようにＩ
ｎ濃度勾配を設けたことを特徴とする無転位ＧａＡｓ単
結晶製造用の種結晶である。(Means for Solving the Problems) The present invention aims to reduce the melting point of the end of the seed crystal that first comes into contact with the raw material melt in a seed crystal for producing an In-doped dislocation-free GaAs single crystal by the LEC method. Set the In concentration at the end so that it is slightly lower than the surface temperature of the raw material melt,
I so that the In concentration decreases toward the other end of the seed crystal.
This is a seed crystal for producing a dislocation-free GaAs single crystal, which is characterized by having an n concentration gradient.
（作用）
純粋なＧａＡｓ結晶の融点は１２３７℃であり、Ｉｎを
添加することにより、第２図のように低下する（長村光
造他、日本金属学会誌ＶｏＬ３６ （１９７２）］）、
７４６） 、一方、無転位ＧａＡｓ単結晶を製造すると
きには、通常、ＧａＡｓ原料に対して３〜ｌＱｗｔ％の
Ｉｎを添加する。このようなＩｎ濃度Ｃｏである原料融
液からＧａＡｓ単結晶を育成するときに偏析係数にはお
よそ０１てあり、固化率ｇの位置における育成結晶中の
Ｉｎ濃度Ｃ（ｇ）は、次の式で求めることができる。(Function) The melting point of pure GaAs crystal is 1237°C, and by adding In, it decreases as shown in Figure 2 (Mitsuzo Nagamura et al., Journal of the Japan Institute of Metals VoL 36 (1972)).
746) On the other hand, when manufacturing a dislocation-free GaAs single crystal, 3 to 1Qwt% of In is usually added to the GaAs raw material. When growing a GaAs single crystal from a raw material melt with such an In concentration Co, the segregation coefficient is approximately 01, and the In concentration C (g) in the grown crystal at the solidification rate g is calculated using the following formula: It can be found by
Ｃ（ｇ）＝ＣｏＫ（］ ｇ）Ｋ−’
即ち、結晶成長開始時における成長結晶のＩｎ濃度は、
原料融液のＩｎ濃度のおよそ十分の−であり、上記の場
合は約０３〜１ｗｔ％となる。このＩｎ濃度の結晶の融
点は、純粋なＧａＡｓ結晶の融点１２３７°Ｃよりも４
〜９℃低くなる。C(g)=CoK(] g)K-' That is, the In concentration of the growing crystal at the start of crystal growth is
It is about tenths of the In concentration of the raw material melt, and in the above case is about 0.3 to 1 wt%. The melting point of the crystal with this In concentration is 4
~9℃ lower.
仮に、無添加のＧａＡｓ単結晶から種結晶を切り出して
、３〜ｌＱｗｔ％のＴｎを添加したＧａＡｓ融液から単
結晶をＬＥＣ法で育成することを想定すると、該融液は
、前記のように樹枝状結晶が融解する時の温度である、
上記の融点１２３７℃より４〜９℃低 い温度に制御す
ることになり、純粋なＧａＡｓ単結晶である種結晶を該
融液に接触させても、種結晶の融点の方が高いため融解
することはない。Assuming that a seed crystal is cut out from an additive-free GaAs single crystal and a single crystal is grown by the LEC method from a GaAs melt to which 3 to 1Qwt% of Tn is added, the melt will be grown as described above. is the temperature at which the dendrites melt,
The temperature is controlled to be 4 to 9 degrees Celsius lower than the above melting point of 1237 degrees Celsius, and even if a seed crystal, which is a pure GaAs single crystal, is brought into contact with the melt, it will melt because the seed crystal has a higher melting point. Never.
また、該融液の制御温度が、種結晶の融点に近い温度ま
で上昇するときにも、種結晶は融解しないので、該融液
の温度制御が極めて容易になる。しかし、無添加のＧａ
Ａｓ単結晶は転位密度が高いので、無転位ＧａＡｓ単結
晶製造用の種結晶としては、そのまま用いることができ
ない。Furthermore, even when the controlled temperature of the melt increases to a temperature close to the melting point of the seed crystal, the seed crystal does not melt, making temperature control of the melt extremely easy. However, additive-free Ga
Since the As single crystal has a high dislocation density, it cannot be used as is as a seed crystal for producing a dislocation-free GaAs single crystal.
そこで、本発明では、上記のように種結晶にＩｎ濃度勾
配を設けることにより、転位密度を相当に低くし、高温
雰囲気で劣化した種結晶下端面を原料融液との接触によ
り、融解して除くことができ、かつ、上記の融解を一定
の範囲で止め、安定した固液界面を形成することにより
、種結晶の融解劣化が防止されるようになった。 第１
図（ａ）は種結晶のＩｎａ度勾配を模式的に示したもの
であり、第１図（ｂ）は第１図（ａ）の種結晶の融点分
布を示したもので、種結晶の高さ位置は第１図（Ｃ）に
対応させている。第１図（Ｃ）は種付は時の説明図であ
り、種結晶１を原料融液４の表面３に接触した状態を点
線で示した。種結晶１の下方点線の領域は第１図（ａ）
に示すようにＩｎ濃度が高く、その融点は第１図（ｂ）
に示すように原料融液の温度より低（なるために融解す
る。そして、固液界面２の位置における種結晶の融点は
原料融液の制御温度と一致する。Therefore, in the present invention, by providing an In concentration gradient in the seed crystal as described above, the dislocation density is considerably lowered, and the lower end surface of the seed crystal, which has deteriorated in a high-temperature atmosphere, is melted by contact with the raw material melt. By stopping the above-mentioned melting within a certain range and forming a stable solid-liquid interface, deterioration of the seed crystal due to melting can be prevented. 1st
Figure 1(a) schematically shows the Ina degree gradient of the seed crystal, and Figure 1(b) shows the melting point distribution of the seed crystal in Figure 1(a). The position corresponds to FIG. 1(C). FIG. 1(C) is an explanatory view of seeding, and the state in which the seed crystal 1 is in contact with the surface 3 of the raw material melt 4 is shown by dotted lines. The area indicated by the dotted line below the seed crystal 1 is shown in Fig. 1(a).
As shown in Figure 1(b), the In concentration is high, and its melting point is as shown in Figure 1(b).
As shown in , the seed crystal melts because it is lower than the temperature of the raw material melt.Then, the melting point of the seed crystal at the solid-liquid interface 2 coincides with the control temperature of the raw material melt.
このように種結晶を原料融液に接触することにより、原
料融液の温度に見合う位置まで種結晶を融解して、種結
晶の表面劣化層を除き、清浄な種付は面を確保するとと
もに、種結晶の上記位置より上方に融解が進むことを抑
制して安定した固液界面で種付けを行うことができ、種
結晶からの転位の伝播を防止することができるので、引
き」−げ結晶の中心部の転移密度を大幅に低減する。By bringing the seed crystal into contact with the raw material melt in this way, the seed crystal is melted to a position that matches the temperature of the raw material melt, removing the surface deterioration layer of the seed crystal and ensuring a clean seeding surface. , it is possible to suppress the melting from proceeding above the above-mentioned position of the seed crystal and perform seeding at a stable solid-liquid interface, and it is possible to prevent the propagation of dislocations from the seed crystal. significantly reduces the dislocation density in the center.
また、この種結晶の使用により、原料融液の温度が僅か
に上昇するときにも、固液界面の位置を若干変動させる
だけで、上記のような良質な結晶を製造することができ
、原料融液の温度制御を容易にした。In addition, by using this seed crystal, even when the temperature of the raw material melt rises slightly, it is possible to produce high-quality crystals as described above by simply changing the position of the solid-liquid interface slightly. This makes it easier to control the temperature of the melt.
なお、種結晶は下端から固液界面に至る間のＩｎ濃度勾
配が、上記の目的に沿っていればよく、厳密な温度勾配
を設ける必要もない。Note that it is sufficient that the In concentration gradient of the seed crystal from the lower end to the solid-liquid interface meets the above objective, and there is no need to provide a strict temperature gradient.
（実施例）
〈種結晶の作成〉
］、５ｋｇのＧａＡｓ多結晶と１０．５ｇの金属Ｉｎと
２００ｇのＢ、０３を直径１０ｃｍのｐＢＮ製るつぼに
いれて、ＬＥＣ法で＜１００＞方向に引き上げることに
より、直径６０ｍｍの単結晶を得た。この単結晶から頭
部と尾部を切り落として高さ６ｃｍの円柱状結晶とし、
その両端部のＩｎ濃度を測定すると、下端はＱ、３ｗｔ
％、上端は０．０９ ｗ ｔ％てあった。この両端部か
らウェハを切り出して研磨し、Ｋ ＯＨ融液中でエツチ
ングしたところ、端から約５〜７ｍｍの周辺部と中心部
のエッチピット密度（ＥＰＤ）はいずれも５．０００
ｃ ＋ｆｆ′□２を越えるが、その中間の環状部分は２
００ｃｍ−”以下であって実質的に無転位単結晶と言え
る。この環状部分下方より軸に沿って５ｍｍ角で５５ｍ
ｍの長さの棒状結晶を切り出して種結晶とした。種結晶
のＩｎ濃度は下端がＱ、３ｗｔ％である。(Example) <Creation of seed crystal>] 5 kg of GaAs polycrystal, 10.5 g of metal In, 200 g of B, 03 are placed in a PBN crucible with a diameter of 10 cm, and pulled in the <100> direction by the LEC method. As a result, a single crystal with a diameter of 60 mm was obtained. Cut off the head and tail from this single crystal to obtain a cylindrical crystal with a height of 6 cm.
When the In concentration at both ends is measured, the lower end is Q, 3wt.
%, the upper limit was 0.09 wt%. When a wafer was cut out from both ends, polished, and etched in a KOH melt, the etch pit density (EPD) at the periphery about 5 to 7 mm from the edge and at the center were both 5.000.
c +ff'□2, but the annular part in the middle is 2
00 cm-" or less, and it can be said to be a substantially dislocation-free single crystal. From the bottom of this annular part, along the axis, 55 m square 5 mm.
A rod-shaped crystal with a length of m was cut out and used as a seed crystal. The lower end of the In concentration of the seed crystal is Q, which is 3 wt%.
〈引き上げ結晶の育成〉
４ｋｇのＧａＡｓ多結晶と１２０ｇの金属Ｉｎと十分脱
水した５００ｇの８２０３（水分含量１５０ｐｐｍ以下
）を直径６インチのｐＢＮ製るつぼに入れてＬＥＣ炉の
中にセットした。種結晶としは、上記の棒状結晶を硫酸
系のエツチング液で処理したものを用いて、Ｉｎ濃度の
高い方を下に向けて引き上げ軸に固定した。次いで、Ｌ
Ｅ Ｃ炉内を真空排気した後、窒素ガスで加圧し、原
料を融解した。<Growth of pulled crystal> 4 kg of GaAs polycrystal, 120 g of In metal, and 500 g of sufficiently dehydrated 8203 (water content 150 ppm or less) were placed in a pBN crucible with a diameter of 6 inches and set in an LEC furnace. The above-mentioned rod-shaped crystal treated with a sulfuric acid-based etching solution was used as a seed crystal, and was fixed on a pulling shaft with the side with a higher In concentration facing downward. Then L
After the inside of the EC furnace was evacuated, it was pressurized with nitrogen gas to melt the raw materials.
原料融液の温度を徐々に下げて樹枝状結晶を一度発生さ
せてから、再び、温度を上昇させて結晶を融解し、融解
時の温度即ち原料融液から結晶が析出する温度に維持し
た。それから、引き上げ軸を下げて種結晶を原料融液に
接触させ、十分になじませた後、引き上げ速度５ｍｍ／
ｈｒ、引き上げ軸の回転速度３ｒｐｍで引き上げた。引
き上げ結晶の直径制御は、引き上げ軸上部に取り付けた
ロードセルの結晶重量測定値をもとに行った。After the temperature of the raw material melt was gradually lowered to once generate dendrites, the temperature was raised again to melt the crystals and maintained at the melting temperature, that is, the temperature at which crystals precipitate from the raw material melt. Then, lower the pulling shaft to bring the seed crystal into contact with the raw material melt, and after thoroughly blending it, the pulling speed was set at 5 mm/
hr, and the pulling shaft was pulled at a rotational speed of 3 rpm. The diameter of the pulled crystal was controlled based on the crystal weight measured by a load cell attached to the top of the pulling shaft.
このようにして、直径８０ｍｍの円柱状結晶を得た。結
晶の下部１／４には、Ｉｎの析出も見られたが、上部の
高さ１２０ｍｍは単結晶であった。上端のＩｎ濃度は０
．３ｗ ｔ％であり、下端のＩｎ濃度は］、１ｗｔ％で
あった。この単結晶部分から直径８０ｍｍのウェハを切
り出し、研磨してＫＯＨ融液でエツチングしたところ、
ウェハの周辺部に長さ１０ｍｍ程度の５ｌｉｐがあった
が、中心部には、ＥＰＤ５００ｃｍ−”以下の広い無転
位の領域が有ることが分かった。なお、引き上げ後の種
結晶をみると、長さが約２ｍｍ融解して短くなっていた
。In this way, a cylindrical crystal with a diameter of 80 mm was obtained. In the lower 1/4 of the crystal, precipitation of In was also observed, but the upper part with a height of 120 mm was a single crystal. The In concentration at the top is 0
．． 3wt%, and the In concentration at the lower end was 1wt%. A wafer with a diameter of 80 mm was cut from this single crystal part, polished and etched with KOH melt.
Although there were 5lips with a length of about 10mm at the periphery of the wafer, it was found that there was a wide dislocation-free region with an EPD of less than 500cm-'' in the center. The length had melted and become shorter by about 2 mm.
（発明の効果）
本発明は、上記の構成を採用することにより、原料融液
温度が融点から僅かにずれても、種結晶を融解劣化する
こともなく、多結晶を析出することもなく、安定した固
液界面で種付けすることができ、その結果、伝播転位の
発生が抑えられ、中心部に実質的に転位を有しないＧａ
Ａｓ単結晶を製造することができるようになった。(Effects of the Invention) By employing the above configuration, the present invention prevents the seed crystal from melting and deteriorating even if the temperature of the raw material melt slightly deviates from the melting point, and does not precipitate polycrystals. It is possible to seed at a stable solid-liquid interface, and as a result, the generation of propagating dislocations is suppressed, resulting in Ga that has virtually no dislocations in the center.
It has become possible to produce As single crystals.
第１図は本発明の種結晶を用いた種付けの説明図であり
、（ａ）は種結晶のＩｎｆｉ度分布図、（ｂ）は種結晶
のそれぞれの位置における融点分布を示した図、（Ｃ）
は種結晶と原料融液との関係を示した図であり、第２図
はＧａＡｓ結晶にＩｎを添加するときの平衡状態図であ
る。FIG. 1 is an explanatory diagram of seeding using the seed crystal of the present invention, (a) is an Infi degree distribution diagram of the seed crystal, (b) is a diagram showing the melting point distribution at each position of the seed crystal, ( C)
2 is a diagram showing the relationship between a seed crystal and a raw material melt, and FIG. 2 is an equilibrium state diagram when In is added to a GaAs crystal.
Claims (3)
り製造するための種結晶において、原料融液と初めに接
触する種結晶の端部の融点を原料融液の表面温度より僅
かに低くなるように、該端部のＩｎ濃度を設定し、種結
晶の他端部に向かってＩｎ濃度が低下するような濃度勾
配を設けたことを特徴とする無転位ＧａＡｓ単結晶製造
用の種結晶。(1) In a seed crystal for producing an In-doped dislocation-free GaAs single crystal by the LEC method, the melting point of the end of the seed crystal that first comes into contact with the raw material melt is made slightly lower than the surface temperature of the raw material melt. A seed crystal for producing a dislocation-free GaAs single crystal, characterized in that the In concentration at the end is set such that a concentration gradient is provided such that the In concentration decreases toward the other end of the seed crystal.
偏析係数を乗じた値かそれより大きくしたことを特徴と
する特許請求の範囲第１項記載の無転位ＧａＡｓ単結晶
製造用の種結晶。(2) For producing a dislocation-free GaAs single crystal according to claim 1, wherein the In concentration at the lower end of the seed crystal is set to a value equal to or larger than the In concentration of the raw material melt multiplied by the segregation coefficient. seed crystal.
上低下させたことを特徴とする特許請求の範囲第１項ま
たは第２項記載の無転位ＧａＡｓ単結晶製造用の種結晶
。(3) A seed crystal for producing a dislocation-free GaAs single crystal according to claim 1 or 2, wherein the In concentration at the upper end of the seed crystal is lowered by 20% or more than at the lower end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP125388A JPH01179796A (en) | 1988-01-08 | 1988-01-08 | Seed crystal for producing non-dislocation gaas single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP125388A JPH01179796A (en) | 1988-01-08 | 1988-01-08 | Seed crystal for producing non-dislocation gaas single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01179796A true JPH01179796A (en) | 1989-07-17 |
Family
ID=11496289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP125388A Pending JPH01179796A (en) | 1988-01-08 | 1988-01-08 | Seed crystal for producing non-dislocation gaas single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01179796A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997032059A1 (en) * | 1996-02-29 | 1997-09-04 | Sumitomo Sitix Corporation | Method and apparatus for withdrawing single crystal |
| JP2020158362A (en) * | 2019-03-27 | 2020-10-01 | 住友金属鉱山株式会社 | SEED CRYSTAL FOR FeGa SINGLE CRYSTAL GROWTH, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING FeGa SINGLE CRYSTAL |
-
1988
- 1988-01-08 JP JP125388A patent/JPH01179796A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997032059A1 (en) * | 1996-02-29 | 1997-09-04 | Sumitomo Sitix Corporation | Method and apparatus for withdrawing single crystal |
| JP2020158362A (en) * | 2019-03-27 | 2020-10-01 | 住友金属鉱山株式会社 | SEED CRYSTAL FOR FeGa SINGLE CRYSTAL GROWTH, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING FeGa SINGLE CRYSTAL |
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