JP2848067B2 - Seed crystal of silicon single crystal - Google Patents
Seed crystal of silicon single crystalInfo
- Publication number
- JP2848067B2 JP2848067B2 JP3323908A JP32390891A JP2848067B2 JP 2848067 B2 JP2848067 B2 JP 2848067B2 JP 3323908 A JP3323908 A JP 3323908A JP 32390891 A JP32390891 A JP 32390891A JP 2848067 B2 JP2848067 B2 JP 2848067B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- seed
- seed crystal
- single crystal
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、チョクラルスキー法
（ＣＺ法）によるシリコン単結晶引上げにおいてシリコ
ン溶液から単結晶を育成する際に使用するシリコン単結
晶の種結晶に関する。さらに詳しくは、種結晶の先端部
の形状の改善に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon single crystal seed crystal used for growing a single crystal from a silicon solution in pulling a silicon single crystal by the Czochralski method (CZ method). More specifically, the present invention relates to improvement of the shape of the tip of a seed crystal.
【０００２】[0002]
【発明の背景技術】石英ルツボ内のシリコン融液から無
転位単結晶を成長させる際には、一般にＣＺ法が広く用
いられている。この方法は、種結晶をシリコン融液に接
触させ、次いで特定直径の種絞りを行って種絞り部分を
引上げ、種絞り部分の単結晶を無転位化し、その後目的
とするシリコン棒の直径まで結晶を徐々に太らせて成長
させることにより、必要な面方位を有する無転位の単結
晶棒を得ることができるものである。BACKGROUND OF THE INVENTION In growing a dislocation-free single crystal from a silicon melt in a quartz crucible, the CZ method is generally widely used. In this method, a seed crystal is brought into contact with a silicon melt, and then a seed drawing of a specific diameter is performed to pull up the seed drawing portion, dislocation-free the single crystal in the seed drawing portion, and then crystallize to a target silicon rod diameter. Is grown gradually so that a dislocation-free single crystal rod having a required plane orientation can be obtained.
【０００３】図３は、従来用いられていた種結晶２０を
示し、その先端部２１は平坦であった。このため、この
種結晶２０を用いて引上げを行う場合、シリコン融液と
種結晶２０が接触する際の熱応力のために種結晶側にス
リップ転位が導入され、無転位の単結晶を得ることが困
難であった。このような高密度のスリップ転位が導入さ
れた種結晶を用いて引続き単結晶を成長させた場合に
は、結晶の成長とともに高密度の転位が伝播していく
（千川他、日本結晶成長学会誌 ４、２−２２（１９７
７））。FIG. 3 shows a seed crystal 20 conventionally used, the tip 21 of which is flat. Therefore, when pulling is performed using this seed crystal 20, slip dislocations are introduced on the seed crystal side due to thermal stress when the silicon melt and the seed crystal 20 come into contact, and a dislocation-free single crystal is obtained. Was difficult. When a single crystal is continuously grown using a seed crystal into which such high-density slip dislocations are introduced, the high-density dislocations propagate as the crystal grows (Chikawa et al., Journal of the Japanese Society for Crystal Growth) 4, 2-22 (197
7)).
【０００４】この問題を解決するために、Ｄａｓｈ法が
開発され、広く利用されている（Ｗ．Ｃ．Ｄａｓｈ
Ｊ，Ａｐｐｌ．Ｐｈｙｓ．２９，７３８−７３７（１９
５８））。この方法は、図４に示すように、種結晶２０
をシリコン融液に接触させた後に直径を３ｍｍ程度に一
旦細くして種絞り部分２２を形成することにより、種結
晶２０に導入されたスリップ転位２３から伝播した転位
を消滅させ、無転位の単結晶を得るものである。To solve this problem, the Dash method has been developed and widely used (WC Dash).
J, Appl. Phys. 29, 738-737 (19
58)). This method uses a seed crystal 20 as shown in FIG.
Is brought into contact with the silicon melt, and then the diameter is once thinned to about 3 mm to form the seed constricted portion 22, whereby the dislocation propagated from the slip dislocation 23 introduced into the seed crystal 20 is extinguished, and It is for obtaining crystals.
【０００５】[0005]
【発明が解決しようとする課題】Ｄａｓｈ法による無転
位化のためには、上記のように、種結晶から引続き成長
させる単結晶部に直径の小さい種絞り部分が必要とな
る。しかし、単結晶の大口径化に伴って単結晶も高重量
化し、前記ような直径の極めて小さい種絞り部分で高重
量化した単結晶を支持するには強度が充分でなく、種絞
り部分の破損により単結晶棒が落下する等の重大な事故
を生じる恐れがあった。In order to eliminate dislocations by the Dash method, as described above, a seed portion having a small diameter is required in a single crystal portion continuously grown from a seed crystal. However, as the diameter of the single crystal increases, the weight of the single crystal also increases, and the strength is not enough to support the heavy crystal in the above-described seed drawing portion having an extremely small diameter. There was a possibility that a serious accident such as a single crystal rod falling due to breakage might occur.
【０００６】この問題を解決するために、結晶保持機構
を用いる方法が示されている（特開昭６３−２５２９９
１号公報）が、この方法では結晶育成時に結晶形状を特
定な形状にする必要がある。また、結晶保持のために新
たに複雑な機構を設置する必要がある。In order to solve this problem, a method using a crystal holding mechanism has been disclosed (JP-A-63-25299).
However, in this method, it is necessary to make the crystal shape specific during the crystal growth. Further, it is necessary to newly install a complicated mechanism for holding the crystal.
【０００７】[0007]
【発明の目的】本発明は、上記のような問題点を解決す
るため、種結晶の先端部の形状を改善することにより、
複雑な結晶保持機構を設けることなく、確実に引上げを
行うことができる種結晶を提供することを目的とする。An object of the present invention is to solve the above problems by improving the shape of the tip of a seed crystal.
An object of the present invention is to provide a seed crystal that can be reliably pulled without providing a complicated crystal holding mechanism.
【０００８】[0008]
【課題を解決するための手段】そこで本発明は、種結晶
の先端部の形状を楔状とし、シリコン融液との接触断面
積を極力少なくする様にし、接触時の熱的なショックを
軽減する様にした。又、その角度は２０°〜６０°の間
が望ましい。本願発明の種結晶がシリコン融液と僅かに
離れた状態で熱輻射により予熱すれば更に好ましい。楔
状先端は、断面正方形の単結晶細棒を必要長さに切断す
るに際し、本願発明の角度で切断すれば、同時に２ケの
種結晶の先端部が加工され、先端が多面体又は円錐面に
比較して加工が容易である。SUMMARY OF THE INVENTION Accordingly, the present invention is to reduce the thermal shock at the time of contact by making the tip of the seed crystal into a wedge shape to minimize the cross-sectional area of contact with the silicon melt. I did it. The angle is desirably between 20 ° and 60 °. More preferably, the seed crystal of the present invention is preheated by thermal radiation in a state slightly separated from the silicon melt. If the wedge-shaped tip is cut at an angle according to the present invention when cutting a single-crystal thin rod having a square cross section to the required length, the tips of two seed crystals are simultaneously processed, and the tip is compared with a polyhedron or conical surface. It is easy to process.
【０００９】[0009]
【作用】本発明においては、種結晶の先端部が楔状なの
で、同一断面積でも先端部が平坦な種結晶と比較してシ
リコン融液との接触面積が小さくなり、種結晶に入るス
リップ転位密度が軽減する。従って、Ｄａｓｈ法による
単結晶の最小直径すなわち種絞り部分が４．５ｍｍ程度
と比較的太い場合でも無転位の単結晶が得られる。この
結果、種絞り部分の破損による結晶棒の落下という事故
が防止される。In the present invention, since the tip of the seed crystal is wedge-shaped, the contact area with the silicon melt is smaller than that of the seed crystal having the same cross-sectional area and the tip is flat, and the slip dislocation density entering the seed crystal is reduced. Is reduced. Therefore, even when the minimum diameter of the single crystal by the Dash method, that is, the seed drawing portion is relatively large, about 4.5 mm, a single crystal without dislocation can be obtained. As a result, an accident of falling of the crystal rod due to breakage of the seed drawing portion is prevented.
【００１０】表１は、Ｄａｓｈ法による種絞り部分の直
径が従来の３ｍｍ程度の種結晶と、本発明の方法による
４．５ｍｍ程度と太くした種結晶の断面積の比を示す。[0010] Table 1 shows the ratio of the cross-sectional area of a conventional seed crystal having a diameter of about 3 mm by the Dash method to a seed crystal having a diameter as large as about 4.5 mm according to the method of the present invention.
【００１１】[0011]
【表１】 −−−−−−−−−−−−−−−−−−−−−−−−−−−−−−− 従来技術 本発明 −−−−−−−−−−−−−−−−−−−−−−−−−−−−−−− 最小直径 ３ｍｍ ４．５ｍｍ −−−−−−−−−−−−−−−−−−−−−−−−−−−−−−− 断面積 ７．１ｍｍ2 １５．９ｍｍ2 −−−−−−−−−−−−−−−−−−−−−−−−−−−−−−− 面積比 １ ２．２３ −−−−−−−−−−−−−−−−−−−−−−−−−−−−−−−Table 1----------------------------Prior art Present invention------------------------------------------------------------------------------ −−−−−−−−−−−−−−−−−−−−−− Minimum diameter 3 mm 4.5 mm −−−−−−−−−−−−−−−−−−−−−−−−−−− −−−−−−− Cross-sectional area 7.1 mm 2 15.9 mm 2 −−−−−−−−−−−−−−−−−−−−−−−−−−−−−−−− Area ratio 1 2.23 --------------------------------------------------------------------
【００１２】表１から分かるように、本発明の種結晶で
は、従来の方法と比較すると最小直径の断面積が約２倍
となるので、従来の２倍程度の高重量結晶の保持が可能
となる。As can be seen from Table 1, in the seed crystal of the present invention, the cross-sectional area of the minimum diameter is about twice as large as that of the conventional method. Become.
【００１３】[0013]
【実施例】以下、本発明の実施例について添付図面を参
照しながら説明する。図１は、本発明の実施例の種結晶
を示す。この種結晶１０の先端部１１は楔状となってお
り、その角度は２０°から６０°の間が望ましいが、本
実施例では、４５℃となっている。Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 shows a seed crystal according to an embodiment of the present invention. The tip 11 of the seed crystal 10 has a wedge shape, and its angle is desirably between 20 ° and 60 °, but is 45 ° C. in this embodiment.
【００１４】上記種結晶１０を用いて引上げを行う場
合、種結晶１０の楔状の先端部１１をシリコン融液に接
触させた後、種結晶の引上げを開始する。そして、種絞
り部分１２を例えば４．５ｍｍ程度に種絞りした後、所
望の口径を有するシリコン単結晶棒を所望の全長に成長
させて引上げる。When the seed crystal 10 is pulled, the wedge-shaped tip 11 of the seed crystal 10 is brought into contact with the silicon melt, and then the pulling of the seed crystal is started. Then, after the seed drawing portion 12 is drawn down to, for example, about 4.5 mm, a silicon single crystal rod having a desired diameter is grown to a desired length and pulled up.
【００１５】種結晶１０の先端部１１が楔状である場
合、図２に示すように種結晶１０のスリップ転位１３の
密度は少なくなる。図５は、従来の種結晶及び本実施例
の種結晶について、選択エッチング（セコ液）によって
スリップ転位に起因したエッチングピット密度を測定し
た結果を示す。従来の種結晶では、スリップ転位に起因
したエッチングピットの密度が２．８×１０3（／ｃ
ｍ2）と高い。一方、本実施例の種結晶では、エッチン
グピットの密度が８．７×１０2（／ｃｍ2）と約３０％
低いことが確認できた。さらに、本実施例の種結晶の直
径４．５ｍｍのＤａｓｈ終了部（種絞り部分）では無転
位化していることが確認できた。When the tip 11 of the seed crystal 10 is wedge-shaped, the density of the slip dislocations 13 of the seed crystal 10 decreases as shown in FIG. FIG. 5 shows the results of measuring the etching pit density due to slip dislocations by selective etching (Seco solution) for the conventional seed crystal and the seed crystal of this example. In a conventional seed crystal, the density of etching pits due to slip dislocation is 2.8 × 10 3 (/ c).
m 2 ). On the other hand, in the seed crystal of this example, the density of the etching pits was 8.7 × 10 2 (/ cm 2 ), which was about 30%.
It was confirmed that it was low. Further, it was confirmed that the seed crystal of this example had no dislocation at the end portion (drained portion) of the seed crystal having a diameter of 4.5 mm.
【００１６】[0016]
【発明の効果】本発明によれば、種絞り部分の最小直径
を従来の３ｍｍ程度から４．５ｍｍ程度まで無転位化を
保持したまま太くすることができる。したがって、複雑
な結晶保持機構を設けることなく、高重量単結晶の引上
げが確実に行え、引上げ中における高重量結晶の落下事
故を防止することができる。According to the present invention, the minimum diameter of the seed drawing portion can be increased from about 3 mm to about 4.5 mm in the prior art while maintaining dislocation-free. Therefore, the heavy-weight single crystal can be reliably pulled without providing a complicated crystal holding mechanism, and a fall accident of the heavy-weight crystal during the pulling can be prevented.
【図１】本発明の一実施例を示す斜視図である。FIG. 1 is a perspective view showing an embodiment of the present invention.
【図２】本発明の実施例の種結晶を用いて結晶成長を行
う場合を示す斜視図である。FIG. 2 is a perspective view showing a case where crystal growth is performed using a seed crystal according to an embodiment of the present invention.
【図３】従来の種結晶を示す斜視図である。FIG. 3 is a perspective view showing a conventional seed crystal.
【図４】従来の種結晶を用いて結晶成長を行う場合を示
す斜視図である。FIG. 4 is a perspective view showing a case where crystal growth is performed using a conventional seed crystal.
【図５】本発明の実施例の種結晶及び従来の種結晶のエ
ッチピット密度を示す棒グラフである。FIG. 5 is a bar graph showing etch pit densities of a seed crystal according to an example of the present invention and a conventional seed crystal.
１０、２０ 種結晶 １１、２１ 先端部 １２、２２ 種絞り部分 １３、２３ スリップ転位 10,20 Seed crystal 11,21 Tip 12,22 Seed constriction 13,23 Slip dislocation
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小田 哲宏 福井県武生市北府２丁目13番50号 信越 半導体株式会社 武生工場内 (56)参考文献 特開 平４−104988（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Tetsuhiro Oda 2-13-50 Kitafu, Takefu-shi, Fukui Shin-Etsu Semiconductor Co., Ltd. Inside the Takefu Plant (56) References JP-A-4-104988 (JP, A)
Claims (2)
げにおいてシリコン融液から単結晶を育成する際に使用
するシリコン単結晶の種結晶において、先端部の形状が
楔状であることを特徴とするシリコン単結晶の種結晶。1. A silicon single crystal seed crystal used for growing a single crystal from a silicon melt in pulling a single crystal by the Czochralski method, wherein the tip of the silicon single crystal has a wedge shape. Single crystal seed crystal.
０°の範囲である請求項１に記載のシリコン単結晶の種
結晶。2. The wedge-shaped tip has an angle of 20 ° to 6 °.
The seed crystal of a silicon single crystal according to claim 1, wherein the angle is in a range of 0 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3323908A JP2848067B2 (en) | 1991-11-12 | 1991-11-12 | Seed crystal of silicon single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3323908A JP2848067B2 (en) | 1991-11-12 | 1991-11-12 | Seed crystal of silicon single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05139880A JPH05139880A (en) | 1993-06-08 |
| JP2848067B2 true JP2848067B2 (en) | 1999-01-20 |
Family
ID=18159960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3323908A Expired - Fee Related JP2848067B2 (en) | 1991-11-12 | 1991-11-12 | Seed crystal of silicon single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2848067B2 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10203898A (en) * | 1997-01-17 | 1998-08-04 | Shin Etsu Handotai Co Ltd | Production of silicon single crystal and seed crystal |
| DE69802864T2 (en) | 1997-05-21 | 2002-08-29 | Shinetsu Handotai Kk | Silicon seed crystal, method of manufacturing the same, and method of manufacturing a silicon single crystal using the silicon seed crystal |
| JP3684769B2 (en) * | 1997-06-23 | 2005-08-17 | 信越半導体株式会社 | Method for producing and holding silicon single crystal |
| JP3402210B2 (en) * | 1997-12-27 | 2003-05-06 | 信越半導体株式会社 | Method for producing silicon single crystal |
| EP0949360A1 (en) | 1998-04-07 | 1999-10-13 | Shin-Etsu Handotai Company Limited | Process for producing a silicon single crystal by Czochralski method. |
| TW538445B (en) | 1998-04-07 | 2003-06-21 | Shinetsu Handotai Kk | Silicon seed crystal and method for producing silicon single crystal |
| JP3440819B2 (en) | 1998-04-07 | 2003-08-25 | 信越半導体株式会社 | Method for producing silicon single crystal |
| JP4862884B2 (en) * | 2008-05-21 | 2012-01-25 | 信越半導体株式会社 | Method for producing silicon single crystal |
| JP5660020B2 (en) | 2011-12-16 | 2015-01-28 | 信越半導体株式会社 | Method for producing silicon single crystal |
| JP7222669B2 (en) * | 2018-11-16 | 2023-02-15 | 株式会社タムラ製作所 | SINGLE CRYSTAL GROWTH METHOD, SEED CRYSTAL, AND SINGLE CRYSTAL |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04104988A (en) * | 1990-08-20 | 1992-04-07 | Fujitsu Ltd | Growth of single crystal |
-
1991
- 1991-11-12 JP JP3323908A patent/JP2848067B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05139880A (en) | 1993-06-08 |
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