JPH01173454A - Magneto-optical recording medium - Google Patents
Magneto-optical recording mediumInfo
- Publication number
- JPH01173454A JPH01173454A JP62334952A JP33495287A JPH01173454A JP H01173454 A JPH01173454 A JP H01173454A JP 62334952 A JP62334952 A JP 62334952A JP 33495287 A JP33495287 A JP 33495287A JP H01173454 A JPH01173454 A JP H01173454A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magneto
- optical recording
- protective layer
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims abstract description 51
- 239000011241 protective layer Substances 0.000 claims abstract description 24
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 12
- 239000000956 alloy Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 9
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 9
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910001936 tantalum oxide Inorganic materials 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 150000004767 nitrides Chemical class 0.000 claims abstract description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 3
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 3
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 3
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 3
- 229910052804 chromium Inorganic materials 0.000 claims abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010936 titanium Substances 0.000 abstract description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract description 2
- 230000008595 infiltration Effects 0.000 abstract 1
- 238000001764 infiltration Methods 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 13
- 230000007797 corrosion Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 230000005374 Kerr effect Effects 0.000 description 1
- 241000283986 Lepus Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、光学的記録に用いる光磁気記録媒体に関する
。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a magneto-optical recording medium used for optical recording.
（従来の技術とその課題）
光メモリー素子の中でも追加記録、消去が可能なイレー
ザブル型メモリーは、光磁気記録方式が最も実用化に近
い段階にいる。光磁気記録媒体の記録層としては総合的
な特性から見て、現在の所、希土類、遷移金属薄膜が最
も多く用いられている。(Conventional technology and its issues) Among optical memory devices, magneto-optical recording is at the closest stage to practical use for erasable memory, which allows additional recording and erasing. At present, thin films of rare earth metals and transition metals are most often used as the recording layer of magneto-optical recording media in terms of overall characteristics.
この光磁気記録媒体として、レーザー光照射時の記録・
再生効率を向上させる為に基板上の光磁気記録層上に反
射層を設ける方式も提案されている。この方式はカー効
果とファラデー効果の併用により高いＣ／Ｎ比を得られ
るという点で優れている。This magneto-optical recording medium can be used for recording and recording during laser beam irradiation.
In order to improve reproduction efficiency, a method has also been proposed in which a reflective layer is provided on the magneto-optical recording layer on the substrate. This method is excellent in that a high C/N ratio can be obtained by using both the Kerr effect and the Faraday effect.
従来、反射層としてＡｌやＡ１合金を用いるものが提案
されている。Conventionally, reflective layers using Al or Al alloy have been proposed.
しかしながら、ＡｌやＡ１合金を使用した場合には局部
腐食に対する耐蝕性という点で問題があった。However, when Al or A1 alloy is used, there is a problem in terms of corrosion resistance against local corrosion.
すなわちＡｌやＡ１合金は表面に自然酸化膜をつくるた
め全体腐食に対しては強固な特性を示すが一度ピンホー
ルが生成すると腐食電流の集中が起こりピンホールの拡
大をもたらすことになる。この反応は特に水分の存在下
において顕著である。That is, Al and A1 alloys form a natural oxide film on their surfaces, so they exhibit strong characteristics against general corrosion, but once pinholes are formed, corrosion current concentrates, resulting in expansion of the pinholes. This reaction is particularly noticeable in the presence of moisture.
（課題を解決するための手段）
本発明者等は上述の欠点を克服した、高耐蝕性で高Ｃ／
Ｎ比の光磁気記録媒体を提供するべく鋭意検討した結果
、特定の物質で保護層を構成することによりキャリアレ
ベルが高く、経時安定性に優れた光磁気記録媒体が得ら
れることを見出した。(Means for Solving the Problems) The present inventors have devised a highly corrosion resistant and high C/
As a result of intensive studies aimed at providing a magneto-optical recording medium with a high N ratio, it was discovered that a magneto-optical recording medium with a high carrier level and excellent stability over time can be obtained by forming a protective layer with a specific substance.
本発明の要旨は、基板上に金属窒化物からなる干渉層、
光磁気記録層、反射層および保護層を順次設けてなる光
磁気記録媒体において、反射層がＡｔまたはＡｌを主体
とする合金であり、保護層が金属酸化物であることを特
徴とする光磁気記録媒体に存する。The gist of the present invention is to provide an interference layer made of metal nitride on a substrate,
A magneto-optical recording medium comprising a magneto-optical recording layer, a reflective layer and a protective layer, wherein the reflective layer is made of an alloy mainly composed of At or Al, and the protective layer is made of a metal oxide. Exists in a recording medium.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
まず、本発明において用いられる基板としては、ガラス
、アクリル樹脂、ポリカーボネート樹脂等のプラスチッ
ク、又はアルミニウム等の金属、ガラス上に溝つき樹脂
を形成した基板等が挙げられる。First, examples of the substrate used in the present invention include glass, plastics such as acrylic resin and polycarbonate resin, metals such as aluminum, and substrates in which grooved resin is formed on glass.
基板の厚みは１〜２０程度が一般的である。The thickness of the substrate is generally about 1 to 20 mm.
光磁気記録層としては、たとえば、ＴｂＦｅ、ＴｂＦｅ
Ｃｏ、、ＴｂＣｏ、、ＤｙＦｅＣｏなどの希土類と遷移
金属の非晶質磁性合金、及びＭｎＢ１、ＭｎＣｕＢ ｉ
などの多結晶垂直磁化膜が用いられる。As the magneto-optical recording layer, for example, TbFe, TbFe
Amorphous magnetic alloys of rare earths and transition metals such as Co, TbCo, DyFeCo, and MnB1, MnCuBi
A polycrystalline perpendicularly magnetized film such as the following is used.
特に希土系の合金磁性膜に用いて大変効果的である。光
磁気記録層としては単一の層を用いても良いし、ＧｄＴ
ｂＦｅ／ＴｂＦｅのように２層以上の記録層を重ねても
良い。光磁気記録層の膜厚は２５０〜５００人が好まし
い。It is particularly effective for use in rare earth alloy magnetic films. A single layer may be used as the magneto-optical recording layer, or GdT
Two or more recording layers may be stacked, such as bFe/TbFe. The thickness of the magneto-optical recording layer is preferably 250 to 500.
本発明においては、上記基板と光磁気記録層の間に干渉
層を設ける。この層は高屈折率の透明膜による光の干渉
効果を用い反射率を落とすことでノイズを低下させＣ／
Ｎ比を向上させるためのものである。In the present invention, an interference layer is provided between the substrate and the magneto-optical recording layer. This layer uses the light interference effect of a transparent film with a high refractive index to lower the reflectance and reduce noise.
This is to improve the N ratio.
干渉層は単層膜でも多層膜でもよい。干渉層としては金
属窒化物が用いられる。金属窒化物としては窒化シリコ
ン、窒化アルミニウム等が挙げられるが、これらの金属
窒化物は緻密で外部からの水分や酸素の侵入を防ぐ、特
に窒化シリコンを用いて良好である。The interference layer may be a single layer film or a multilayer film. Metal nitride is used as the interference layer. Examples of metal nitrides include silicon nitride and aluminum nitride. These metal nitrides are dense and prevent moisture and oxygen from entering from the outside, and silicon nitride is particularly suitable for use.
窒化シリコンのＳｔとＮの比率はＮが多すぎれば膜の屈
折率が低下し緻密性も悪くなる。またＮが少なすぎれば
、膜に吸収を生じキャリアレベルの低下をもたらす、従
ってＳｉとＮとの比は化学量論的組成比（ＳｉｓＮ４）
もしくはそれより多少Ｓｔが多い状態が好ましい。具体
的には、ＳｔとＮの原子比はＳ ｉ ／ Ｎで０．７５
〜１．０の範囲が良い。窒化シリコンの屈折率は６３０
ｎｍの波長で測定したときの複素屈折率（ｎ＊）をｎ
”＝ｎ−ｉＫ（ｉは虚数を表す）としたとき２．０≦ｎ
≦２．５でかつ０＜Ｋ＜０．２の範囲であるのが良い。If the ratio of St to N in silicon nitride is too large, the refractive index of the film will decrease and the density will deteriorate. Also, if there is too little N, absorption occurs in the film and the carrier level decreases, so the ratio of Si to N is the stoichiometric composition ratio (SisN4).
Alternatively, a state where the amount of St is slightly higher than that is preferable. Specifically, the atomic ratio of St and N is 0.75 in Si/N.
A range of ~1.0 is good. The refractive index of silicon nitride is 630
The complex refractive index (n*) when measured at a wavelength of nm is n
”=n-iK (i represents an imaginary number), 2.0≦n
It is preferable that ≦2.5 and 0<K<0.2.
この干渉層の膜厚は屈折率により最適膜厚が異なるが、
通常４００人〜１５００人程度、特に５００〜１０００
人程度が適当である。The optimum thickness of this interference layer varies depending on the refractive index, but
Usually about 400 to 1500 people, especially 500 to 1000 people
Approximately one person is appropriate.
記録層上に設けられる反射層は一般的には高反射率の物
質が考えられるが、 Ａｕ、Ａｇ、Ｐｔはコストが高＜
Ｃｕは腐食を起こし易いためＡｌまたはＡｌの合金の薄
膜を用いる。The reflective layer provided on the recording layer is generally made of a material with high reflectance, but Au, Ag, and Pt are expensive and expensive.
Since Cu tends to corrode, a thin film of Al or an Al alloy is used.
−特にＡｌにＴａ、、Ｔｉ、Ｚｒ、Ｍｏ、Ｐｔ、Ｖ、Ｃ
ｒ、Ｐｄの少なくとも１種を１５原子％程度まで添加し
た合金は高反射率であり、熱伝導度も低く、高Ｃ／Ｎ比
、高感度と良好な特性をもたらす。反射層の膜厚は通常
１００〜１０００人程度、好ましくは２００〜６００人
程度である。厚すぎた場合感度が低下し、薄すぎる場合
には反射率が低下する。- Especially in Al, Ta, Ti, Zr, Mo, Pt, V, C
An alloy containing up to about 15 atomic % of at least one of r and Pd has high reflectance, low thermal conductivity, high C/N ratio, high sensitivity, and good characteristics. The thickness of the reflective layer is usually about 100 to 1000, preferably about 200 to 600. If it is too thick, the sensitivity will decrease, and if it is too thin, the reflectance will decrease.
反射層上に設けられる保護層としては金属酸化物が用い
られる。金属酸化物としては酸化タンタル、酸化アルミ
ニウム、酸化チタニウム等が挙げられるが、これらの金
属酸化物は緻密で外部からの水分や酸素の侵入を防ぐ、
特に酸化タンタルを用いて良好である。A metal oxide is used as the protective layer provided on the reflective layer. Examples of metal oxides include tantalum oxide, aluminum oxide, and titanium oxide, but these metal oxides are dense and prevent moisture and oxygen from entering from the outside.
Particularly good is the use of tantalum oxide.
酸化タンタルの保護層は窒化物からなる保護層に比べ内
部応力が小さくクラックの入る確立ははるかに小さくな
る
酸化タンタルの組成は化学量論的組成比（Ｔａ。A protective layer made of tantalum oxide has lower internal stress than a protective layer made of nitride, and the probability of cracking is much smaller.The composition of tantalum oxide is a stoichiometric composition (Ta.
０、）に近い組成が好ましい。過剰な酸素は記録層の酸
化をもたらすことになると共に屈折率が低下して干渉効
果が弱くなる。また、酸素が不足している場合には未酸
化部分に腐食が集中し、ピンホールが発生し易くなると
共に膜の光吸収が大きくなりキャリアレベルの低下が起
こる。A composition close to 0, ) is preferred. Excess oxygen causes oxidation of the recording layer, and the refractive index decreases, weakening the interference effect. Furthermore, when oxygen is insufficient, corrosion concentrates on unoxidized portions, making pinholes more likely to occur, and light absorption of the film increases, resulting in a drop in carrier level.
また、保護層の作成時に反射層が酸化されることが考え
られるが、ＡｌまたはＡ１合金の反射層は表面に強固な
酸化皮膜を形成するため深さ数十Å以上の酸化は起こら
ない。Further, it is possible that the reflective layer is oxidized when the protective layer is formed, but since the reflective layer of Al or A1 alloy forms a strong oxide film on the surface, oxidation does not occur to a depth of several tens of angstroms or more.
この保護層の膜厚は厚いほど保護能力が高いが、厚いほ
ど感度の低下も大きいので、通常５０人〜５００人程度
が適当である。The thicker the protective layer is, the higher the protective ability is, but the greater the thickness, the greater the decrease in sensitivity.
基板上に干渉層、記録層、反射層、保護層の各層を形成
する方法には、スパッタリング等の物理蒸着法（ＰＶＤ
）、プラズマＣＶＤのような化学蒸着法（ＣＶＤ）等が
適用される。Physical vapor deposition methods (PVD) such as sputtering are used to form the interference layer, recording layer, reflective layer, and protective layer on the substrate.
), chemical vapor deposition (CVD) such as plasma CVD, etc. are applied.
ＰＶＤ法にて光磁気記録層、干渉層、反射層及び保護層
を成膜形成するには、所定の組成をもったターゲットを
用いて電子ビーム蒸着またはスパッタリングにより基板
上に各層を堆積するのが通常の方法である。To form a magneto-optical recording layer, an interference layer, a reflective layer, and a protective layer using the PVD method, each layer is deposited on a substrate by electron beam evaporation or sputtering using a target with a predetermined composition. This is the normal method.
また、イオンブレーティングを用いる方法も考えられる
。Furthermore, a method using ion blating is also considered.
膜の堆積速度は早すぎると膜応力を増加させ、遅すぎれ
ば生産性に影響するので通常０．１人／ ｓ ｅ ｃ〜
１００人／ ｓ ｅ ｃ程度とされる。If the film deposition rate is too fast, it will increase the film stress, and if it is too slow, it will affect productivity, so it is usually 0.1 person/sec~
It is said to be around 100 people/sec.
保護層の場合、Ｔａ２Ｏ，ターゲットを用いたＲＦスパ
ッタ法、Ｔａターゲットを用いたＡｒと０２ガスによる
ＤＣまたはＲＦ反応性スパッタ法、電子ビーム蒸着法等
が好ましい。これらのうち、酸素量の制御が可能である
こと、成膜速度が速いこと、基板温度の上昇が小さいこ
と等の点からＴａターゲットを用いたＡｒと０□ガスに
よるＤＣ反応性スパック法が好ましい。In the case of the protective layer, RF sputtering using a Ta2O target, DC or RF reactive sputtering using Ar and O2 gas using a Ta target, electron beam evaporation, etc. are preferred. Among these, the DC reactive spackle method using Ar and 0□ gas using a Ta target is preferable because it is possible to control the amount of oxygen, has a fast film formation rate, and has a small rise in substrate temperature. .
以下に実施例をもって本発明を更に詳細に説明するが本
発明はその要旨を越えない限り以下の実施例に限定され
るものではない。The present invention will be explained in more detail with reference to examples below, but the present invention is not limited to the following examples unless it exceeds the gist thereof.
実施例１
１３０ｍｍφのポリカーボネート基板をスパッタリング
装置に導入し、先ず８Ｘ１０−７ｔ ｏ ｒ ｒ以下ま
で排気し、ＡｒとＮ２との混合ガスを用いてＳｉターゲ
ットの反応性スパッタを行いＳｉ：ＩＮ、からなる８０
０人の干渉層を形成した。次いでＴｂターゲット及びＦ
ｅＣｏターゲットを用いたＡｒガスによる２元同時スパ
ッタによりＴｂ２□（ＦｅｑｏＣＯ＋。Example 1 A polycarbonate substrate with a diameter of 130 mm was introduced into a sputtering apparatus, and the atmosphere was first evacuated to below 8 x 10-7 torr, and reactive sputtering of a Si target was performed using a mixed gas of Ar and N2, which consisted of Si:IN. 80
An interference layer of 0 people was formed. Then Tb target and F
Tb2□(FeqoCO+) was produced by binary simultaneous sputtering with Ar gas using an eCo target.
）７８の３００人記録層を設けた。更にＴａチップを配
置したＡｌツタ−ットをＡｒガス中でスパッターしＡｌ
ｑ□Ｔａ、の合金からなる３００人の反射層を形成した
。更にＴａターゲットをＡｒと０２の混合ガスで反応性
スパッタすることにより酸化たんたるからなる保護層を
設けた。) A record layer of 300 people was set for 78. Furthermore, the Al tube on which the Ta chip was placed was sputtered in Ar gas.
A 300-layer reflective layer made of an alloy of q□Ta was formed. Furthermore, a protective layer made of tantalum oxide was provided by reactive sputtering of the Ta target with a mixed gas of Ar and O2.
保護層の膜厚を変えていった時の媒体の最適記録パワー
の変化を第１図に示す。FIG. 1 shows the change in the optimum recording power of the medium when the thickness of the protective layer is changed.
記録条件はｆ＝０．５ＭＨｚ、 ＣＡＶ１８００ｒｐ
ｍＳ ｄｕｔｙ５０％、ｒ＝３０ｍｍとした。Recording conditions: f=0.5MHz, CAV1800rp
The mS duty was 50% and r = 30 mm.
（最適記録パワーは記録時の２次歪みが最小となる記録
パワーであり値が小さいほど感度が良いことを表す）。(The optimal recording power is the recording power that minimizes the second-order distortion during recording, and the smaller the value, the better the sensitivity).
保護層が５００Å以下では感度の劣化が一割未満で済む
。このディスクを７０’Ｃ１８５％ＲＨの条件下で５０
０ｈｒの加速試験を行い試験前後のエラーレートを測定
したところ増加は約２．０倍に抑えられた（第２図参照
）。When the protective layer is 500 Å or less, the deterioration in sensitivity is less than 10%. This disc was heated for 50 minutes at 70'C, 185% RH.
When we conducted a 0-hour accelerated test and measured the error rate before and after the test, the increase was suppressed to about 2.0 times (see Figure 2).
なお、保護層として酸化アルミニウムを用いた場合もほ
ぼ同様の結果を得た。Note that almost similar results were obtained when aluminum oxide was used as the protective layer.
比較例１
比較例として反射層までを実施例と同様に形成し保護層
を設けなかったディスクを作成した。Comparative Example 1 As a comparative example, a disk was prepared in which the reflective layer was formed in the same manner as in the example, but no protective layer was provided.
このディスクを実施例と同様に７０°Ｃ１８５％ＲＨの
条件下で５００ｈｒの加速試験を行い試験前後のエラー
レートを測定したところ増加は約５．０倍に達した（第
２図参照）。This disk was subjected to an accelerated test for 500 hours under the conditions of 70° C. and 185% RH in the same manner as in the example, and the error rate before and after the test was measured, and the increase reached approximately 5.0 times (see FIG. 2).
本発明の光磁気記録媒体は再生信号品質及び耐蝕性に優
れる。The magneto-optical recording medium of the present invention has excellent reproduction signal quality and corrosion resistance.
第１図は実施例の保護層の膜厚変化による最適記録パワ
ーの変化を示す。第２図は加速試験を行った際の試験前
後のエラーレートを示す。
出 願 人 三菱化成工業株式会社代理人 弁理士
長谷用 −
（ばか１名）
第１図
領 厚Ｃス）
第２図
０ １００ ２００ ＪＤＯ’ｆ００ ５
００力ａＬａう 間 （ｈｙ）FIG. 1 shows the change in the optimum recording power due to the change in the thickness of the protective layer in the example. Figure 2 shows the error rate before and after the accelerated test. Applicant Mitsubishi Chemical Industries, Ltd. Agent Patent Attorney Hase - (1 idiot) Figure 1 Thick C) Figure 2 0 100 200 JDO'f00 5
00 power aLa between (hy)
Claims (4)
層、反射層および保護層を順次設けてなる光磁気記録媒
体において、反射層がＡｌまたはＡｌを主体とする合金
であり、保護層が金属酸化物であることを特徴とする光
磁気記録媒体。(1) In a magneto-optical recording medium in which an interference layer made of a metal nitride, a magneto-optical recording layer, a reflective layer and a protective layer are sequentially provided on a substrate, the reflective layer is made of Al or an alloy mainly composed of Al, and the protective layer is A magneto-optical recording medium characterized in that the layer is a metal oxide.
るいはこれらの複合酸化物であることを特徴とする特許
請求の範囲第１項記載の光磁気記録媒体。(2) The magneto-optical recording medium according to claim 1, wherein the protective layer is made of tantalum oxide, aluminum oxide, or a composite oxide thereof.
特許請求の範囲第１項記載の光磁気記録媒体。(3) The magneto-optical recording medium according to claim 1, wherein the interference layer is made of silicon nitride.
ｔ、Ｐｄから選ばれた少なくとも１種の元素を含むＡｌ
系合金であることを特徴とする特許請求の範囲第１項記
載の光磁気記録媒体。(4) Reflective layer is Ta, Ti, Zr, V, Mo, Cr, P
Al containing at least one element selected from t, Pd
2. The magneto-optical recording medium according to claim 1, wherein the magneto-optical recording medium is made of an alloy.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62334952A JPH01173454A (en) | 1987-12-28 | 1987-12-28 | Magneto-optical recording medium |
| CA000570235A CA1324213C (en) | 1987-06-26 | 1988-06-23 | Magnetooptical recording media |
| KR1019880007767A KR960010928B1 (en) | 1987-06-26 | 1988-06-24 | Magnetooptical recording media |
| DE88305842T DE3883310T2 (en) | 1987-06-26 | 1988-06-24 | Magneto-optical media. |
| EP88305842A EP0296888B1 (en) | 1987-06-26 | 1988-06-24 | Magnetooptical recording media |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62334952A JPH01173454A (en) | 1987-12-28 | 1987-12-28 | Magneto-optical recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01173454A true JPH01173454A (en) | 1989-07-10 |
Family
ID=18283071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62334952A Pending JPH01173454A (en) | 1987-06-26 | 1987-12-28 | Magneto-optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01173454A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01173453A (en) * | 1987-12-28 | 1989-07-10 | Mitsubishi Kasei Corp | Magneto-optical recording medium |
| JPH01173455A (en) * | 1987-12-28 | 1989-07-10 | Mitsubishi Kasei Corp | Magneto-optical recording medium |
| JPH038151A (en) * | 1989-06-05 | 1991-01-16 | Matsushita Electric Ind Co Ltd | Magneto-optical recording medium and production thereof |
| JPH03272888A (en) * | 1990-03-22 | 1991-12-04 | Fuji Photo Film Co Ltd | Photomagnetic recording medium and its manufacture |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57169996A (en) * | 1981-04-09 | 1982-10-19 | Sharp Corp | Magnetooptic storage element |
| JPS586542A (en) * | 1981-07-02 | 1983-01-14 | Sharp Corp | Magnetooptic storage element |
| JPS5860441A (en) * | 1981-10-06 | 1983-04-09 | Canon Inc | Photothermomagnetic recording medium |
| JPS6134747A (en) * | 1984-07-27 | 1986-02-19 | Hitachi Ltd | Photoelectromagnetic multilayered film medium |
| JPS6150236A (en) * | 1984-08-18 | 1986-03-12 | Canon Inc | Magnetic recording medium |
| JPS62170050A (en) * | 1986-01-22 | 1987-07-27 | Sumitomo Electric Ind Ltd | Photomagnetic disk |
| JPS62281139A (en) * | 1986-05-30 | 1987-12-07 | Sumitomo Metal Mining Co Ltd | Magneto-optical disk |
| JPS62293541A (en) * | 1986-06-12 | 1987-12-21 | Konica Corp | Magneto-optical recording medium |
| JPH01173455A (en) * | 1987-12-28 | 1989-07-10 | Mitsubishi Kasei Corp | Magneto-optical recording medium |
| JPH01173453A (en) * | 1987-12-28 | 1989-07-10 | Mitsubishi Kasei Corp | Magneto-optical recording medium |
-
1987
- 1987-12-28 JP JP62334952A patent/JPH01173454A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57169996A (en) * | 1981-04-09 | 1982-10-19 | Sharp Corp | Magnetooptic storage element |
| JPS586542A (en) * | 1981-07-02 | 1983-01-14 | Sharp Corp | Magnetooptic storage element |
| JPS5860441A (en) * | 1981-10-06 | 1983-04-09 | Canon Inc | Photothermomagnetic recording medium |
| JPS6134747A (en) * | 1984-07-27 | 1986-02-19 | Hitachi Ltd | Photoelectromagnetic multilayered film medium |
| JPS6150236A (en) * | 1984-08-18 | 1986-03-12 | Canon Inc | Magnetic recording medium |
| JPS62170050A (en) * | 1986-01-22 | 1987-07-27 | Sumitomo Electric Ind Ltd | Photomagnetic disk |
| JPS62281139A (en) * | 1986-05-30 | 1987-12-07 | Sumitomo Metal Mining Co Ltd | Magneto-optical disk |
| JPS62293541A (en) * | 1986-06-12 | 1987-12-21 | Konica Corp | Magneto-optical recording medium |
| JPH01173455A (en) * | 1987-12-28 | 1989-07-10 | Mitsubishi Kasei Corp | Magneto-optical recording medium |
| JPH01173453A (en) * | 1987-12-28 | 1989-07-10 | Mitsubishi Kasei Corp | Magneto-optical recording medium |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01173453A (en) * | 1987-12-28 | 1989-07-10 | Mitsubishi Kasei Corp | Magneto-optical recording medium |
| JPH01173455A (en) * | 1987-12-28 | 1989-07-10 | Mitsubishi Kasei Corp | Magneto-optical recording medium |
| JPH038151A (en) * | 1989-06-05 | 1991-01-16 | Matsushita Electric Ind Co Ltd | Magneto-optical recording medium and production thereof |
| JPH03272888A (en) * | 1990-03-22 | 1991-12-04 | Fuji Photo Film Co Ltd | Photomagnetic recording medium and its manufacture |
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