JPH02297739A - Magneto-optical recording medium - Google Patents
Magneto-optical recording mediumInfo
- Publication number
- JPH02297739A JPH02297739A JP11842789A JP11842789A JPH02297739A JP H02297739 A JPH02297739 A JP H02297739A JP 11842789 A JP11842789 A JP 11842789A JP 11842789 A JP11842789 A JP 11842789A JP H02297739 A JPH02297739 A JP H02297739A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magneto
- optical recording
- recording
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims abstract description 72
- 239000011241 protective layer Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 8
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- -1 rare earth transition metal Chemical class 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 19
- 230000007774 longterm Effects 0.000 abstract 2
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 13
- 230000007797 corrosion Effects 0.000 description 12
- 238000005260 corrosion Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003340 mental effect Effects 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910017061 Fe Co Inorganic materials 0.000 description 1
- 230000005374 Kerr effect Effects 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光学的記録に用いる光磁気記録媒体に関する
0
〔従来の技術とその課題〕
光メモリー素子の中でも追加記録、消去が可能なイレー
ザブル型メモリーとして光磁気記録方式が実用化されて
いる。光磁気記録媒体の記録層としては総合的な特性か
ら見て、現在の所、希土類、遷移金属薄膜が最も多く用
いられている。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a magneto-optical recording medium used for optical recording. Magneto-optical recording has been put into practical use as type memory. At present, thin films of rare earth metals and transition metals are most often used as the recording layer of magneto-optical recording media in terms of overall characteristics.
この光磁気記録媒体として、レーザー光照射時の記録・
再生効率を向上させる為に基板上の光磁気記録層上に反
射層を設ける方式も提案されている。この方式はカー効
果とファラデー効果の併用により高いC/N比を得られ
るという点で優れている0
従来、反射層としてAtやA1合金を用いるものが提案
されている。This magneto-optical recording medium can be used for recording and recording during laser beam irradiation.
In order to improve reproduction efficiency, a method has also been proposed in which a reflective layer is provided on the magneto-optical recording layer on the substrate. This method is excellent in that a high C/N ratio can be obtained by combining the Kerr effect and the Faraday effect. Conventionally, methods using At or A1 alloy as the reflective layer have been proposed.
しかしながら、A1やA1合金を使用した場合には局部
腐食に対する耐蝕性という点で問題があった。すなわち
AIやA1合金は表面に自然酸化膜をつ(るため全体腐
食に対しては強固な特性を示すが一度ピンホールが生成
すると腐食電流の集中が起こりピンホールの拡大をもた
らすことになる0この反応は特に水分の存在下において
顕著である。However, when A1 or A1 alloy is used, there is a problem in terms of corrosion resistance against local corrosion. In other words, AI and A1 alloys have a natural oxide film on their surfaces, so they exhibit strong characteristics against general corrosion, but once a pinhole is formed, corrosion current concentrates, causing the pinhole to expand. This reaction is particularly noticeable in the presence of moisture.
本発明者らは先に基板/干渉層/光磁気記録層/反射層
/保護層の層構成からなる光磁気記録媒体の提案を行な
った(%願昭1.3−3292/A)。The present inventors previously proposed a magneto-optical recording medium having a layer structure of substrate/interference layer/magneto-optical recording layer/reflection layer/protective layer (%Global Application No. 1.3-3292/A).
しかしながら、この層構成でもまだ十分な耐食性を有す
るとは云い難い0また記録感度も十分ではない。However, even with this layer structure, it is difficult to say that it has sufficient corrosion resistance, and the recording sensitivity is also not sufficient.
した結果、記録層に添加する元素及びその一度を適当に
選択すること罠より、高C/N比、高記録感度でかつ、
経時安定性に優れた光磁気記録媒体が得られることを見
出しfA。As a result, by appropriately selecting the elements added to the recording layer and the elements added to the recording layer, a high C/N ratio, high recording sensitivity, and
It was discovered that a magneto-optical recording medium with excellent stability over time can be obtained.
本発明の要旨は、(1)透明基板上に、干渉層、Rhを
l〜/夕原子%(atX)含むRE−TM記録層、反射
層および保護層を順次設けてなる光磁気記録媒体である
。The gist of the present invention is (1) a magneto-optical recording medium in which an interference layer, a RE-TM recording layer containing Rh at 1 to 1 atomic % (atX), a reflective layer, and a protective layer are sequentially provided on a transparent substrate. be.
以下本発明の詳細な説明する。The present invention will be explained in detail below.
まず、本発明において用いられる基板としては、ガラス
、アクリル樹脂、ポリカーボネート樹脂等のプラスチッ
ク、ガラス上に溝つき樹脂を形成した基板等が挙げられ
るQ
基板の厚みは/〜コ咽程度が一般的である。First, substrates used in the present invention include glass, plastics such as acrylic resin and polycarbonate resin, and substrates with grooved resin formed on glass. be.
光磁気記録層はTbFe、 TbFeCo、DyFeC
o。The magneto-optical recording layer is TbFe, TbFeCo, DyFeC
o.
GdTbFe、 NcLDyFeCo等の希土類−遷移
金属系垂直磁化膜であって、Rhをl〜/&at%含有
している。It is a rare earth-transition metal-based perpendicularly magnetized film such as GdTbFe or NcLDyFeCo, and contains 1~/&at% of Rh.
垂直磁化膜としてはRhを/〜/ lr at%含有す
る希土類−遷移金属非晶質合金薄膜単層であっても良い
が、該組成をact!mz、他の希土類−遷移金属膜と
を積層した多層記録層としても良い。The perpendicular magnetization film may be a single layer of rare earth-transition metal amorphous alloy thin film containing Rh at %/~/lr at%, but the composition is set to act! It may also be a multilayer recording layer in which mz and other rare earth-transition metal films are laminated.
記録層にRh を添加することにより、記録層の耐食性
及び記録感度が向上する。By adding Rh to the recording layer, the corrosion resistance and recording sensitivity of the recording layer are improved.
Rh濃度は記録層に対して/at%atXないいと、防
食効果及び記録感度向上の効果が見られない。If the Rh concentration is /at % at
一方Rh濃度が/ 、t atX を超えるとC/N
比が小さくなり、防食効果もなくなる。特に好ましくは
、−〜gat%である。On the other hand, when the Rh concentration exceeds / , t atX , C/N
The ratio becomes smaller and the anticorrosive effect is lost. Particularly preferably, it is -~gat%.
光磁気記録層の膜厚は2!;0−!;00にである0
本発明においては、上記基板と光磁気記録層の間に干渉
層を設ける。この層は高屈折率の透明膜による光の干渉
効果を用い反射率を落とすことでノイズを低下させC/
N比を向上させるためのものである。干渉層は単層膜で
も多層膜でもよい。干渉層としては金属酸化物が用いら
れる。金属酸化物としては酸化タンタル、酸化アルミニ
ウム、酸化チタニウム等が挙げられるが、これらの金属
酸化物は緻密で外部からの水分や酸素の侵入を防ぐ、特
に酸化メンタルを用いて良好である。The thickness of the magneto-optical recording layer is 2! ;0-! ;00 is 0 In the present invention, an interference layer is provided between the substrate and the magneto-optical recording layer. This layer uses the light interference effect of a transparent film with a high refractive index to lower the reflectance and reduce noise.
This is to improve the N ratio. The interference layer may be a single layer film or a multilayer film. Metal oxides are used as the interference layer. Examples of metal oxides include tantalum oxide, aluminum oxide, and titanium oxide. These metal oxides are dense and prevent moisture and oxygen from entering from the outside, and are particularly suitable for use with mental oxide.
酸化タンタルの干渉層は窒化物からなる干渉層に比べ内
部応力が小さくクラックの入る確率ははるかに小さくな
る。An interference layer made of tantalum oxide has lower internal stress than an interference layer made of nitride, and the probability of cracking is much smaller.
酸化タンタルの組成は化学量論的組成比(Ta。The composition of tantalum oxide is a stoichiometric composition ratio (Ta.
0、)に近い組成が好ましい。過剰な酸素は記録層の酸
化をもたらすことになると共に屈折率が低下して干渉効
果が弱(なる。また、酸素が不足している場合には未酸
化部分に腐食が集中し、ピンホールが発生し易くなると
共に膜の光吸収が大きくなりキャリアレベルの低下が起
こる。A composition close to 0, ) is preferred. Excess oxygen causes oxidation of the recording layer, lowers the refractive index, and weakens the interference effect.Also, if there is a lack of oxygen, corrosion will concentrate on the unoxidized areas, causing pinholes. As it becomes more likely to occur, light absorption of the film increases and the carrier level decreases.
好ましい酸化状態では屈折率はA 33 nmの波長で
測定したときの複素屈折率をn*=n −i Kとした
ときコ、O≦n≦2.2でかつl K l (o、lr
の範囲である〇
この干渉層の膜厚は屈折率により最適膜厚かに!;00
A−10OOAが適当である。In the preferred oxidation state, the refractive index is A 33 nm, where the complex refractive index is n*=n −i K, O≦n≦2.2, and l K l (o, lr
The thickness of this interference layer is within the range of 〇The thickness of this interference layer is the optimum thickness depending on the refractive index! ;00
A-10OOA is suitable.
記録層上に設けられる反射層は一般的圧は高反射率の物
質が考えられるが、Au、 Ag、 Ptはコストが高
(Cuは腐食を起こし易いため通常AtまたはAIの合
金の薄膜を用いる。The reflective layer provided on the recording layer is generally made of a material with high reflectivity, but Au, Ag, and Pt are expensive (Cu is prone to corrosion, so a thin film of an alloy of At or Al is usually used. .
特にA1にTa、 Ti、 Zr、 Mo、 Pt%V
%Cr、Pdの少なくとも7種を15原子%程度まで添
加した合金は高反射率であり、熱伝導度も低(高CZN
比、感度共に良好な特性をもたらす。特にTa、 Ti
、 Mo、Crが好ましく用いられる0反射層の膜厚は
通常100〜1oooA程度、好ましくは200−AO
OA程度である。厚すぎた場合感度が低下し、薄すぎる
場合には反射率が低下する。Especially A1 contains Ta, Ti, Zr, Mo, Pt%V
Alloys containing at least seven types of Cr and Pd up to about 15 atomic % have high reflectance and low thermal conductivity (high CZN
Provides good characteristics in both ratio and sensitivity. Especially Ta, Ti
, Mo, and Cr are preferably used. The thickness of the reflective layer is usually about 100 to 100A, preferably 200-AO.
It is about OA. If it is too thick, the sensitivity will decrease, and if it is too thin, the reflectance will decrease.
反射層上に設けられる保護層としては窒化物7′。A nitride 7' is used as a protective layer provided on the reflective layer.
又は金属酸化物等が用いられる0窒化物としては窒化ケ
イ素、窒化アルミ等、金属酸化物としては酸化タンタル
、酸化アルミニウムのそれぞれ単独又はこれらの複合酸
化物が好ましい。特に好ましくは酸化メンタル、酸化ア
ルミニウムである。Alternatively, a metal oxide or the like is preferably used.The nitride is preferably silicon nitride, aluminum nitride, etc., and the metal oxide is preferably tantalum oxide or aluminum oxide, each alone or a composite oxide thereof. Particularly preferred are mental oxide and aluminum oxide.
これらの窒化物、酸化物は外部からの水分の侵入を防ぐ
ため反射層の腐食を大きく抑制できる。また、保護層の
作成時に反射層が酸化されることが考えられるが、At
またはA1合金の反射層は表面に強固な酸化皮膜を形成
するため深さ数十A以上の酸化は起こらない。Since these nitrides and oxides prevent moisture from entering from the outside, they can greatly suppress corrosion of the reflective layer. In addition, it is possible that the reflective layer is oxidized during the creation of the protective layer, but At
Alternatively, since the reflective layer of A1 alloy forms a strong oxide film on the surface, oxidation does not occur to a depth of several tens of amps or more.
この保護層の膜厚は厚いほど保護能力が高いが厚いほど
感度の低下も大きくなるので、通常基板上に干渉層、記
録層、反射層、保護層の各層を形成する方法には、スパ
ッタリング等の物理蒸着法(PVD)、プラズマCVD
のような化学蒸着法(CVD)等が適用される。The thicker the protective layer, the higher the protective ability, but the thicker the layer, the greater the drop in sensitivity. Therefore, the methods for forming the interference layer, recording layer, reflective layer, and protective layer on the substrate include sputtering, etc. physical vapor deposition (PVD), plasma CVD
A chemical vapor deposition method (CVD) such as the above is applied.
PVD法にて光磁気記録層、反射層及び保護層を成膜形
成するには、所定の組成をもったターゲットを用いて電
子ビーム蒸着またはスパッタリングにより基板上に各層
を堆積するのが通常の方法である。To form a magneto-optical recording layer, a reflective layer, and a protective layer using the PVD method, the usual method is to deposit each layer on a substrate by electron beam evaporation or sputtering using a target with a predetermined composition. It is.
また、イオンブレーティングを用いる方法も考えられる
。Furthermore, a method using ion blating is also considered.
膜の堆積速度は早すぎると膜応力を増加させ、遅すぎれ
ば生産性に影響するので通常0./A/sec〜/θO
A / sec程度とされる。If the film deposition rate is too fast, it will increase the film stress, and if it is too slow, it will affect productivity, so it is usually set at 0. /A/sec~/θO
It is estimated to be about A/sec.
干渉層の場合、T a 、O,ターゲットを用いたRF
スパッタ法、Taターゲットを用いたArと02ガスに
よるDCまたはRF反応性スパッタ法、電子ビーム蒸着
法等が好ましい。これらのうち、酸素量の制御が可能で
あること、成膜速度が速いこと、基板温度の上昇が小さ
いこと等の点からTaターゲットを用いたArとO,ガ
スによるDC反応性スパッタ法が好ましい。この場合、
屈折率の制御は圧力を変えることで容易に達成できる。For the interference layer, RF with T a , O, target
A sputtering method, a DC or RF reactive sputtering method using Ar and O2 gas using a Ta target, an electron beam evaporation method, etc. are preferable. Among these, the DC reactive sputtering method using Ar, O, and gas using a Ta target is preferable because it allows the amount of oxygen to be controlled, the film formation rate is fast, and the rise in substrate temperature is small. . in this case,
Control of the refractive index can be easily achieved by changing the pressure.
以下に実施例をもって本発明を更に詳細に説明するが本
発明はその要旨を越えない限り以下の実施例に限定され
るものではない。The present invention will be explained in more detail with reference to examples below, but the present invention is not limited to the following examples unless it exceeds the gist thereof.
実施例工
130mBのポリカーボネート基板をスパッタリング装
置に導入し、先ずEXlo ’tor+r以下まで排気
し、ArとO7との混合ガスを用いてTaターゲットの
反応性スパッタを行いTa2O2からなるgooにの干
渉層を形成した。EXAMPLE A polycarbonate substrate of 130 mB was introduced into a sputtering device, and the air was first evacuated to below EXlo'tor+r, and a Ta target was reactively sputtered using a mixed gas of Ar and O7 to form an interference layer on the goo made of Ta2O2. Formed.
チャンバーを一度排気した後Arを100この時Fe、
。Co、6ターゲツト上に、Rhチップを置いてスパッ
タリングすることにより磁性層にRhを添加した。Rh
濃度は磁性層中&at%であった。After evacuating the chamber once, Ar was 100% Fe at this time,
. Rh was added to the magnetic layer by placing a Rh chip on a Co,6 target and performing sputtering. Rh
The concentration was &at% in the magnetic layer.
T b F e Co Rh層の膜厚は3θOAとなる
ように作製した。The T b Fe Co Rh layer was manufactured to have a thickness of 3θOA.
更にTaチップを配置したAIメタ−ットなArガス中
でスパッターL A l 11? T a 3の合金か
らなるJOOAの反射層を形成した。更にTa ターゲ
ットをArと02の混合ガスで名パックすることにより
酸化タンタルからなる保護層を設けた0
このディスクを光磁気記録再生装置を用いて、以下の条
件で記録・再生しC/N比、記録感度を測定した。Furthermore, sputtering in AI metal Ar gas with a Ta chip arranged L A l 11? A JOOA reflective layer made of an alloy of T a 3 was formed. Furthermore, a protective layer made of tantalum oxide was provided by packing the Ta target with a mixed gas of Ar and 02. This disk was recorded and played back using a magneto-optical recording and reproducing device under the following conditions to determine the C/N ratio. , recording sensitivity was measured.
(条件) r=JOrun、 CAV /10100
rp = / MHz 、 パルス幅!; 00 n
5eC記録磁界 20θOe
再生パワー へグmW
また、このディスクをtO°Cj3にRHの条件で/
000 hr の劣化加速試験を行ない、試験前後のエ
ラーレートを測定した。(Conditions) r=JOrun, CAV/10100
rp = / MHz, pulse width! ;00n
5eC Recording magnetic field 20θOe Reproduction power HegmW Also, this disc was heated to tO°Cj3 under RH condition/
An accelerated deterioration test of 000 hr was conducted, and the error rate before and after the test was measured.
C/N比はA / dB 、記録感度はtl、2mW/
000 hr の加速試験でのエラーレートの増加は
、20%であった。(表1参照)
比較例1
記録層にRhを添加していない以外は実施例/と同じ層
構成のディスクを作製した。C/N ratio is A/dB, recording sensitivity is tl, 2mW/
The increase in error rate in the 000 hr accelerated test was 20%. (See Table 1) Comparative Example 1 A disk having the same layer structure as in Example was produced except that Rh was not added to the recording layer.
実施例1と同じ条件でこのディスクのC/N比記録感度
及びエラーレートを測定した。The C/N ratio recording sensitivity and error rate of this disk were measured under the same conditions as in Example 1.
C/N比t、 / dB 1記録層度’1.tmWエラ
ーレートの増加は300%であった。C/N ratio t, / dB 1 recording layer degree '1. The increase in tmW error rate was 300%.
実施例γ比べて記録感度が0.1mW悪(、また耐食性
は大きく劣ることが分かる。(表/参照)
比較例コ
記録層への添加元素がCr であること以外は実施例/
と同じ層構成のディスクを作製した。Compared to Example γ, the recording sensitivity is 0.1 mW worse (and it can be seen that the corrosion resistance is significantly inferior (see table)) Comparative Example
A disk with the same layer structure was fabricated.
Cr濃度は記録層中、tat%であった。The Cr concentration in the recording layer was tat%.
実施例Iと同じ条件でこのディスクのC/N比記録感度
及びエラーレートを測定した。The C/N ratio recording sensitivity and error rate of this disc were measured under the same conditions as in Example I.
C/N比!; g dB 、記録感度ダ、、!tdB、
エラーレートの増加は50%であった。C/N ratio! ; g dB, recording sensitivity da...! tdB,
The increase in error rate was 50%.
実施例りに比べてC/N比、記録感度、耐食性いずれも
劣ることが分かる(表1参照)比較例3
酸化タンタルからなる保護層を設けないこと以外は実施
例1と同じ層構成のディスクを作製した。It can be seen that the C/N ratio, recording sensitivity, and corrosion resistance are all inferior compared to Example 1 (see Table 1) Comparative Example 3 A disk with the same layer structure as Example 1 except that the protective layer made of tantalum oxide was not provided. was created.
実施例1と同じ条件で、このディスクのC/N比、記録
感度及びエラーレートを測定した。The C/N ratio, recording sensitivity, and error rate of this disc were measured under the same conditions as in Example 1.
C/NJt A/ ds、記録感度’1.3 mW 、
−!−ラーレートの増加は60%であった。C/NJt A/ds, recording sensitivity '1.3 mW,
-! - The increase in lar rate was 60%.
実施例1に比べて記録感度が若゛干悪化し、耐食性も劣
ることが分かる。(表/参照)
表 l
〔発明の効果〕
本発明によれば記録層にRhを添加し、膜の層構成を干
渉層、記録層、反射層、保護層の順とすることにより、
高C/N比、かつ、経時安定性に優れ、しかも記録感度
の極めて良好な光磁気記録媒体が得られる。It can be seen that the recording sensitivity is slightly worse than in Example 1, and the corrosion resistance is also inferior. (Table/Reference) Table l [Effects of the Invention] According to the present invention, by adding Rh to the recording layer and making the layer structure of the film in the order of interference layer, recording layer, reflective layer, and protective layer,
A magneto-optical recording medium having a high C/N ratio, excellent stability over time, and extremely good recording sensitivity can be obtained.
Claims (4)
有する希土類遷移金属系記録層、反射層および保護層を
順次設けてなる光磁気記録媒体。(1) A magneto-optical recording medium comprising, on a transparent substrate, an interference layer, a rare earth transition metal recording layer containing 1 to 15 atomic % of Rh, a reflective layer, and a protective layer.
るいはこれらの複合酸化物であることを特徴とする特許
請求の範囲第1項記載の光磁気記録媒体。(2) The magneto-optical recording medium according to claim 1, wherein the protective layer is made of tantalum oxide, aluminum oxide, or a composite oxide thereof.
るいはこれらの複合酸化物であることを特徴とする特許
請求の範囲第1項記載の光磁気記録媒体。(3) The magneto-optical recording medium according to claim 1, wherein the interference layer is made of tantalum oxide, aluminum oxide, or a composite oxide thereof.
t、Pdから選ばれた少なくとも1種の元素を含むAl
系合金であることを特徴とする特許請求の範囲第1項記
載の光磁気記録媒体。(4) Reflective layer is Ta, Ti, Zr, V, Mo, Cr, P
Al containing at least one element selected from t, Pd
2. The magneto-optical recording medium according to claim 1, wherein the magneto-optical recording medium is made of an alloy.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11842789A JPH02297739A (en) | 1989-05-11 | 1989-05-11 | Magneto-optical recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11842789A JPH02297739A (en) | 1989-05-11 | 1989-05-11 | Magneto-optical recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02297739A true JPH02297739A (en) | 1990-12-10 |
Family
ID=14736378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11842789A Pending JPH02297739A (en) | 1989-05-11 | 1989-05-11 | Magneto-optical recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02297739A (en) |
-
1989
- 1989-05-11 JP JP11842789A patent/JPH02297739A/en active Pending
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