JPS62293541A - Magneto-optical recording medium - Google Patents
Magneto-optical recording mediumInfo
- Publication number
- JPS62293541A JPS62293541A JP13717186A JP13717186A JPS62293541A JP S62293541 A JPS62293541 A JP S62293541A JP 13717186 A JP13717186 A JP 13717186A JP 13717186 A JP13717186 A JP 13717186A JP S62293541 A JPS62293541 A JP S62293541A
- Authority
- JP
- Japan
- Prior art keywords
- film
- reflective film
- magneto
- recording medium
- optical recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910052737 gold Inorganic materials 0.000 claims abstract description 4
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 4
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 2
- 239000010408 film Substances 0.000 claims description 42
- 239000010409 thin film Substances 0.000 claims description 17
- 239000000470 constituent Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 230000005415 magnetization Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000005374 Kerr effect Effects 0.000 description 2
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 229910020187 CeF3 Inorganic materials 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910002837 PtCo Inorganic materials 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
- G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
- G11B11/10589—Details
- G11B11/10591—Details for improving write-in properties, e.g. Curie-point temperature
Abstract
Description
【発明の詳細な説明】 ３、発明の詳細な説明 〔産業上の利用分野〕 本発明は、記録感度に優れる光磁気記録媒体に関する。[Detailed description of the invention] 3. Detailed description of the invention [Industrial application field] The present invention relates to a magneto-optical recording medium with excellent recording sensitivity.
光磁気記録は、記録密度が高い、非接触で記録・読み出
しが可能、高速ランダムアクセスができる、信号の並列
処理が可能、さらに書換えもできるなどの特徴、を有し
ているため、近年、特に注目されている。Magneto-optical recording has become particularly popular in recent years due to its features such as high recording density, non-contact recording/reading, high-speed random access, parallel signal processing, and rewriting. Attention has been paid.
光磁気記録媒体の基本的構成は、透明樹脂またはガラス
を基板とし、これに希土類−遷移金属アモルファス合金
、たとえばＧｄＦｅやＧｄＴｂＦｅ等の磁性薄膜を設け
たものである。The basic structure of a magneto-optical recording medium is that a transparent resin or glass substrate is provided with a magnetic thin film of rare earth-transition metal amorphous alloy, such as GdFe or GdTbFe.
周知のように、光磁気記録は、記録に際して、熱磁気記
録によって磁性薄膜にレーザー光を照射して反転磁区を
形成するとともに、読み出しに際しては、磁性薄膜にレ
ーザーの直線偏光を入射し、記録した磁化状Ｂ（大きさ
、方向）に対応して反射光または透過光の偏光面が回転
する現象を利用するものである。反射光の偏光面が回転
する現象がカー効果、その回転角がカー回転角と呼ばれ
ている。As is well known, magneto-optical recording uses thermomagnetic recording to irradiate a magnetic thin film with laser light to form reversed magnetic domains, and for readout, linearly polarized laser light is incident on the magnetic thin film to record the information. This method utilizes a phenomenon in which the plane of polarization of reflected light or transmitted light rotates in response to magnetization B (magnitude and direction). The phenomenon in which the plane of polarization of reflected light rotates is called the Kerr effect, and the angle of rotation is called the Kerr rotation angle.
このカー効果を利用する読み出しでのＳＮ比は、性能指
数＝θやＸ ｆｆ （Ｒ：反射率）に比例し、この性能
指数は光磁気記録媒体の特性に主として依存する。そこ
で、従来から、カー回転角θにを増大し、ＳＮ比を高め
るために、種々の提案がなされてきた。The SN ratio in reading using the Kerr effect is proportional to the figure of merit = θ or X ff (R: reflectance), and this figure of merit mainly depends on the characteristics of the magneto-optical recording medium. Therefore, various proposals have been made to increase the Kerr rotation angle θ and improve the signal-to-noise ratio.
たとえば、特開昭５６−１５６９４３号公報では、磁性
薄膜と透明基板との間に透明誘電体膜を介在させ、見掛
は上のカー回転角の増大を図っている。For example, in Japanese Patent Application Laid-Open No. 56-156943, a transparent dielectric film is interposed between a magnetic thin film and a transparent substrate to apparently increase the Kerr rotation angle.
さらに、磁性薄膜上に透明誘電体膜を形成し、しかもそ
の上にさらに反射層を設けたり、磁性薄膜上に誘電体層
を設けることなく、反射層を直接設けることによって、
カー回転角の増大を図ることも知られている。Furthermore, by forming a transparent dielectric film on a magnetic thin film and further providing a reflective layer thereon, or by directly providing a reflective layer without providing a dielectric layer on the magnetic thin film,
It is also known to increase the Kerr rotation angle.
いずれにしても、見掛は上のカー回転角増大のために反
射層を設ける場合、反射層はＡ１等の熱伝導率の高い金
属からなるので、熱磁気記録の際のレーザー光による熱
が反射膜を伝って逃げ易く、磁性薄膜に熱が十分に蓄積
せず、記録感度が十分でない問題があった。In any case, when a reflective layer is provided to increase the apparent Kerr rotation angle, the reflective layer is made of a metal with high thermal conductivity such as A1, so the heat generated by the laser beam during thermomagnetic recording is There was a problem in that heat easily escapes through the reflective film, does not accumulate enough heat in the magnetic thin film, and does not have sufficient recording sensitivity.
そこで、本発明の主たる目的は、記録感度に優れる光磁
気記録媒体を提供することにある。Therefore, the main object of the present invention is to provide a magneto-optical recording medium with excellent recording sensitivity.
上記目的は、透明基板と、膜面に垂直な方向に容易軸を
もつ磁性薄膜と、反射膜を構成要素の一部とする光磁気
記録媒体において、上記反射膜の温度伝導率ａ＝Ｋ／（
ｃ・ρ）、（ただし、Ｋ：熱伝導率、Ｃ：比熱、ρ：密
度）が１．５ｃｉ／ｓｅｃ以下であることで達成される
。The above objective is to provide a magneto-optical recording medium that includes a transparent substrate, a magnetic thin film having an easy axis in a direction perpendicular to the film surface, and a reflective film as some of its constituent elements, the temperature conductivity of the reflective film being a=K/ (
c・ρ) (where K: thermal conductivity, C: specific heat, ρ: density) is 1.5 ci/sec or less.
以下本発明をさらに詳説する。 The present invention will be explained in more detail below.
本発明では、透明基板と、膜面に垂直な方向に容易軸を
もつ磁性薄膜と、反射膜を構成要素の一部と、する光磁
気記録媒体において、上記反射膜の温度伝導率ａ＝Ｋ／
（ｃ・ρ）、（ただし、Ｋ：熱伝導率、Ｃ：比熱、ρ；
密度）が１．５ ｃｎｌ ／ ｓｅｃ以下とされる。In the present invention, in a magneto-optical recording medium that includes a transparent substrate, a magnetic thin film having an easy axis in a direction perpendicular to the film surface, and a reflective film as part of its constituent elements, the temperature conductivity of the reflective film is a=K /
(c・ρ), (K: thermal conductivity, C: specific heat, ρ;
density) is 1.5 cnl/sec or less.
光磁気記録では、前述のように、熱磁気記録によるので
、レーザー光による熱が記録媒体膜内に蓄り易い方が、
記録感度の向上を図ることができる。したがって、反射
膜としては、熱伝導率が低い、特に１．５ａａ／ｓｅｃ
以下が好ましいことが、後記実施例で示すような本発明
者らの種々の実験で明らかになった。As mentioned above, magneto-optical recording uses thermomagnetic recording, so it is easier for the heat from the laser light to accumulate in the recording medium film.
Recording sensitivity can be improved. Therefore, as a reflective film, thermal conductivity is low, especially 1.5 aa/sec.
The following was found to be preferable through various experiments conducted by the present inventors as shown in Examples below.
本発明において、記録感度改善のために、反射膜の温度
伝導率を１．５ ｃａｌ ／ ｓｅｃ以下とするために
は、反射膜の材質を適切に選定するほか、その成膜条件
、たとえばスパッタ法による場合、スパッタ条件を選定
することによって可能である。In the present invention, in order to make the temperature conductivity of the reflective film 1.5 cal/sec or less in order to improve the recording sensitivity, in addition to appropriately selecting the material of the reflective film, the film formation conditions, such as sputtering method, etc. This can be achieved by selecting sputtering conditions.
本発明において、透明基板と、磁性薄膜と、反射膜を構
成要素の一部とする限り、構造は限定されない。たとえ
ば、透明基板／誘電体膜／磁性薄膜／誘電体膜／反射膜
／保護層の順の構造、透明基板／誘電体膜／磁性薄膜／
反射膜の順の構造や、この種のものを透明基板を外側に
して貼り合せたものなどである。In the present invention, the structure is not limited as long as the transparent substrate, magnetic thin film, and reflective film are part of the constituent elements. For example, a structure in the order of transparent substrate/dielectric film/magnetic thin film/dielectric film/reflective film/protective layer, transparent substrate/dielectric film/magnetic thin film/
These include a structure in which a reflective film is sequentially applied, and a structure in which such a structure is laminated with a transparent substrate facing outward.
本発明における反射膜としては、ＣｕまたはＡβのほか
、Ｔｉ、 Ｐｔ、 Ａｕ、 Ｎｉ、 Ｍｎ、 Ｂｉ、
Ｓｎを用いることができ、二種以上を混合したものであ
ってもよい。この膜厚としては５００人〜１０００人が
好ましい。成膜手段としては、スパッタ法、真空蒸着法
、イオンブレーティング法、プラズマＣＶＤ法などを挙
げることができる。In addition to Cu or Aβ, the reflective film in the present invention includes Ti, Pt, Au, Ni, Mn, Bi,
Sn can be used, and a mixture of two or more types may be used. The film thickness is preferably 500 to 1000. Examples of the film forming method include a sputtering method, a vacuum evaporation method, an ion blating method, and a plasma CVD method.
磁性薄膜の材質としては、希土類−遷移金属アモルファ
ス合金が一般には好ましいが、結晶体の形式であっても
よい。これらの例としては、ＧｄＦｅ。The material for the magnetic thin film is generally a rare earth-transition metal amorphous alloy, but it may also be in the form of a crystalline body. Examples of these are GdFe.
ＴｂＦｅ、 ＧｄＣｏ、 ＤｙＦｅ、 ＧｄＴｂＦｅ、
ＴｂＤｙＦｅ、 ＴｂＦｅＣ０゜ＧｄＴｂＣｏ、 Ｇ
ｄＴｂＦｅＣｏ、 ＧｄＦｅＢ１． ＧｄＴｂＦｅＧｅ
；あるいはこれらにＢｉ＋ Ｓｒ＋ Ｇｅ等の添加元
素が添加されたもの； ＭｎＢ１． ＰｔＣｏ、 Ｍｎ
ＣｕＢ１． ＭｎＡ Ｉ Ｇｅ等がある。TbFe, GdCo, DyFe, GdTbFe,
TbDyFe, TbFeC0゜GdTbCo, G
dTbFeCo, GdFeB1. GdTbFeGe
; or those to which additional elements such as Bi+ Sr+ Ge are added; MnB1. PtCo, Mn
CuB1. There are MnA I Ge and the like.
磁性薄膜の厚さは２００人〜１５００人が好ましい。こ
の膜形成手段としては、反射膜と同様でよい。The thickness of the magnetic thin film is preferably 200 to 1,500. The means for forming this film may be the same as that for the reflective film.
本発明において用いることができる透明基板としては、
ポリメチルメタクリレート（ＰＭＭ八）、ポリカーボネ
ート、ポリ塩化ビニル、ポリイミド、ポリアミド、エポ
キシ、三酢酸セルロース、ポリエチレンテレフタレート
等の樹脂基板のほか、ガラスやセラミック等も挙げるこ
とができる。Transparent substrates that can be used in the present invention include:
Examples include resin substrates such as polymethyl methacrylate (PMM8), polycarbonate, polyvinyl chloride, polyimide, polyamide, epoxy, cellulose triacetate, and polyethylene terephthalate, as well as glass and ceramics.
本発明例において好適に用いることができる透明誘電体
としては、Ａ Ｉ Ｎ、 Ｓｉ３Ｎ４． Ａ Ｉ Ｓｉ
Ｎ等の窒化物のほか、ＣｅＦ３． Ｍｇｐ、、 ＭｇＦ
ｚ、ＬａＦ：＋＋ ＣａＦｚ＋ＮａＦ、 ＺｎＳ＋ ｓ
ｉｏ、 ５ｉｆｔ、 ＣｅＦ、、 ＡｌＦｓ＋ Ｔａｚ
Ｏ３等を挙げることができる。Transparent dielectrics that can be suitably used in the examples of the present invention include AIN, Si3N4. A I Si
In addition to nitrides such as N, CeF3. Mgp,, MgF
z, LaF: ++ CaFz+NaF, ZnS+ s
io, 5ift, CeF,, AlFs+ Taz
O3 etc. can be mentioned.
誘電体膜の膜厚としては、２００人〜２０００人が好ま
しい。成膜法は反射膜と同様でよい。The thickness of the dielectric film is preferably 200 to 2000. The film forming method may be the same as that for the reflective film.
保護（オーバーコート）層としては、たとえばアクリル
系の紫外線硬化樹脂を、スピンコード法などによって形
成することによって得る。この層厚は、１〜２０μｍが
望ましい。The protective (overcoat) layer is obtained by forming, for example, an acrylic ultraviolet curing resin by a spin coding method or the like. The thickness of this layer is preferably 1 to 20 μm.
Ｃ実施例〕
以下、実施例について説明し、本発明の効果を明らかに
する。Example C] Examples will be described below to clarify the effects of the present invention.
（実施例１）
磁性薄膜としてＴｂＦｅＣｏ、誘電体膜としてＳｉ３Ｎ
４、反射膜として八βの各材料を用い、層構成をｐｃ／
５ｉＪｎ ／ＴｂＦｅＣｏ／５ｉＪｎ ／ Ａｆとした
。各膜厚は上記構成順に従って誘電体膜を１４００人、
磁性薄膜を２５０人、誘電体膜を４００人、反射膜を１
０００人とした。(Example 1) TbFeCo as magnetic thin film, Si3N as dielectric film
4. Using each of the 8β materials as the reflective film, the layer structure is pc/
5iJn/TbFeCo/5iJn/Af. Each film thickness is 1400 dielectric films according to the above composition order.
250 people for magnetic thin film, 400 people for dielectric film, 1 person for reflective film.
000 people.
記録条件は、記録周波数をＩＭＨｚ、速度を４ｍ／Ｓ、
消去パワーを６．０ｍＷ、再生パワーを１．０ ｍＷ。The recording conditions were a recording frequency of IMHz, a speed of 4 m/s,
Erasing power is 6.0 mW, playback power is 1.0 mW.
記録デユーティ比を５０％として、二次高調波が最小と
なる点を最適記録パワーにとった。この条件で、最適記
録パワーは６ｍＷであった。なお、Ａｌの物理定数はＫ
： ２．５ Ｗ／ｃｍ−に、 ｃ ＝ ０．２１１ｃ
ａｔ／ ｇ −Ｋ、 ρ＝２．６９ｇ／ｃｍ’で、ａ
＝１．０５ＣｒＡ／ｓｅｅが得られた。The recording duty ratio was set to 50%, and the point at which the second harmonic was minimized was set as the optimum recording power. Under these conditions, the optimum recording power was 6 mW. In addition, the physical constant of Al is K
: 2.5 W/cm-, c = 0.211c
at/g-K, ρ=2.69g/cm', a
=1.05CrA/see was obtained.
（実施例２） 以下、実施例１と同条件で、反射膜にＴｉ、 Ａｇ。(Example 2) Hereinafter, Ti and Ag were applied to the reflective film under the same conditions as in Example 1.
Ｐｔ、 Ａｕ、 Ｃｕ、 Ｎｉ、 Ｍｎ＋ Ｂｉ、Ｓｎ
を用い、それぞれ最適記録パワーを求めた。その結果を
表１に示す。Pt, Au, Cu, Ni, Mn+ Bi, Sn
The optimum recording power was determined using the following. The results are shown in Table 1.
ところで、市販の１５ｍ−半導体レーザーを用いた場合
、半導体レーザーの光利用率は通常約５０％であるから
、ディスク面上の記録レーザーパワーは最大７．５ｍＷ
になる。従って反射膜がＡｇの場合、最適記録パワーが
７．５ｍＷ以上となり測定不能であった。By the way, when using a commercially available 15m-semiconductor laser, the light utilization rate of the semiconductor laser is usually about 50%, so the recording laser power on the disk surface is a maximum of 7.5mW.
become. Therefore, when the reflective film was made of Ag, the optimum recording power was 7.5 mW or more, making it impossible to measure.
次いで表１の結果をグラフで表わしたら第１図のように
なった。この図より反射膜の温度伝導率ａの好ましい範
囲は１．５ｃＪ／ｓｅｃ以下であることが判った。Next, when the results in Table 1 were expressed in a graph, the result was as shown in FIG. From this figure, it was found that the preferable range of the temperature conductivity a of the reflective film is 1.5 cJ/sec or less.
〔発明の効果〕
以上説明したように、本発明によれば、記録感度の優れ
た光磁気記録媒体を提供できる。[Effects of the Invention] As explained above, according to the present invention, a magneto-optical recording medium with excellent recording sensitivity can be provided.
第１図は反射膜の温度伝導率と記録感度との関係を示し
たグラフである。FIG. 1 is a graph showing the relationship between the temperature conductivity of the reflective film and the recording sensitivity.
Claims (2)
性薄膜と、反射膜を構成要素の一部とする光磁気記録媒
体において、上記反射膜の温度伝導率ａ＝Ｋ／（ｃ・ρ
）、（ただし、Ｋ：熱伝導率、ｃ：比熱、ρ：密度）が
１．５ｃｍ＾２／ｓｅｃ以下であることを特徴とする光
磁気記録媒体。(1) In a magneto-optical recording medium that includes a transparent substrate, a magnetic thin film with an easy axis perpendicular to the film surface, and a reflective film as some of its constituent elements, the temperature conductivity of the reflective film is a=K/( c・ρ
), (where K: thermal conductivity, c: specific heat, ρ: density) is 1.5 cm^2/sec or less.
Ｃｕ、Ａｌ、Ｔｉ、Ｐｔ、Ａｕ、Ｎｉ、Ｍｎ、Ｂｉ、Ｓ
ｎの少なくとも一種以上から形成されることを特徴とす
る光磁気記録媒体。(2) In claim 1, the reflective film is
Cu, Al, Ti, Pt, Au, Ni, Mn, Bi, S
A magneto-optical recording medium characterized in that it is formed from at least one kind of n.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13717186A JPS62293541A (en) | 1986-06-12 | 1986-06-12 | Magneto-optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13717186A JPS62293541A (en) | 1986-06-12 | 1986-06-12 | Magneto-optical recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62293541A true JPS62293541A (en) | 1987-12-21 |
Family
ID=15192477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13717186A Pending JPS62293541A (en) | 1986-06-12 | 1986-06-12 | Magneto-optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62293541A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63113835A (en) * | 1986-10-29 | 1988-05-18 | Kyocera Corp | Magneto-optical recording element |
| JPS6466847A (en) * | 1987-09-07 | 1989-03-13 | Mitsubishi Chem Ind | Magneto-optical recording medium |
| JPH01171143A (en) * | 1987-12-25 | 1989-07-06 | Sharp Corp | Magneto-optical recording medium |
| JPH01173455A (en) * | 1987-12-28 | 1989-07-10 | Mitsubishi Kasei Corp | Magneto-optical recording medium |
| JPH01173454A (en) * | 1987-12-28 | 1989-07-10 | Mitsubishi Kasei Corp | Magneto-optical recording medium |
| JPH01173453A (en) * | 1987-12-28 | 1989-07-10 | Mitsubishi Kasei Corp | Magneto-optical recording medium |
| EP0368194A2 (en) * | 1988-11-07 | 1990-05-16 | Hitachi, Ltd. | Magneto-optical system |
| JPH02152050A (en) * | 1988-12-05 | 1990-06-12 | Hitachi Ltd | Magneto-optical disk |
| US5786078A (en) * | 1990-10-26 | 1998-07-28 | Teijin Limited | Magneto-optical recording medium |
| US5914198A (en) * | 1989-06-05 | 1999-06-22 | Hitachi, Ltd. | Magneto-optical recording medium having dielectric layers with different indices of refraction |
-
1986
- 1986-06-12 JP JP13717186A patent/JPS62293541A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63113835A (en) * | 1986-10-29 | 1988-05-18 | Kyocera Corp | Magneto-optical recording element |
| JPS6466847A (en) * | 1987-09-07 | 1989-03-13 | Mitsubishi Chem Ind | Magneto-optical recording medium |
| JPH01171143A (en) * | 1987-12-25 | 1989-07-06 | Sharp Corp | Magneto-optical recording medium |
| JPH01173455A (en) * | 1987-12-28 | 1989-07-10 | Mitsubishi Kasei Corp | Magneto-optical recording medium |
| JPH01173454A (en) * | 1987-12-28 | 1989-07-10 | Mitsubishi Kasei Corp | Magneto-optical recording medium |
| JPH01173453A (en) * | 1987-12-28 | 1989-07-10 | Mitsubishi Kasei Corp | Magneto-optical recording medium |
| EP0368194A2 (en) * | 1988-11-07 | 1990-05-16 | Hitachi, Ltd. | Magneto-optical system |
| JPH02152050A (en) * | 1988-12-05 | 1990-06-12 | Hitachi Ltd | Magneto-optical disk |
| US5914198A (en) * | 1989-06-05 | 1999-06-22 | Hitachi, Ltd. | Magneto-optical recording medium having dielectric layers with different indices of refraction |
| US5786078A (en) * | 1990-10-26 | 1998-07-28 | Teijin Limited | Magneto-optical recording medium |
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