JPH01164760U - - Google Patents
Info
- Publication number
- JPH01164760U JPH01164760U JP6176888U JP6176888U JPH01164760U JP H01164760 U JPH01164760 U JP H01164760U JP 6176888 U JP6176888 U JP 6176888U JP 6176888 U JP6176888 U JP 6176888U JP H01164760 U JPH01164760 U JP H01164760U
- Authority
- JP
- Japan
- Prior art keywords
- ion
- sample chamber
- ion generation
- chamber
- generation chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 claims 1
- 238000000605 extraction Methods 0.000 claims 1
- 238000010884 ion-beam technique Methods 0.000 claims 1
Landscapes
- ing And Chemical Polishing (AREA)
Description
第１図は本考案の一実施例のＲＩＢＥ装置の断
面図、第２図は従来の発散磁場型ＲＩＢＥ装置の
断面図、第３図は従来のグリツド引出し型ＲＩＢ
Ｅ装置の断面図である。
１……イオン発生室、２……試料室、３……ガ
ス導入管、４……排気管、５……マイクロ波源、
６……磁界発生コイル、７……被エツチング試料
、８……プラズマ電位調節用電極。
Fig. 1 is a sectional view of a RIBE device according to an embodiment of the present invention, Fig. 2 is a sectional view of a conventional divergent magnetic field type RIBE device, and Fig. 3 is a sectional view of a conventional grid pull-out type RIBE device.
It is a sectional view of E device. 1... Ion generation chamber, 2... Sample chamber, 3... Gas introduction pipe, 4... Exhaust pipe, 5... Microwave source,
6... Magnetic field generating coil, 7... Sample to be etched, 8... Electrode for adjusting plasma potential.
Claims (1)
に磁界発生用コイルを備えたイオン発生室と、該
イオン発生室とイオン引出し口を介して連結され
、真空排気可能の被エツチング試料室とからなる
ものにおいて、イオン発生室に試料室壁との間に
可調整の電圧を印加できるプラズマ電位調節用電
極を備えたことを特徴とする反応性イオンビーム
エツチング装置。 It consists of an ion generation chamber that is supplied with microwave power and reactive gas and equipped with a magnetic field generation coil around it, and an etched sample chamber that is connected to the ion generation chamber through an ion extraction port and can be evacuated. 1. A reactive ion beam etching apparatus, characterized in that the ion generation chamber is equipped with a plasma potential adjustment electrode capable of applying an adjustable voltage between the sample chamber wall and the sample chamber wall.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6176888U JPH01164760U (en) | 1988-05-11 | 1988-05-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6176888U JPH01164760U (en) | 1988-05-11 | 1988-05-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01164760U true JPH01164760U (en) | 1989-11-17 |
Family
ID=31287415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6176888U Pending JPH01164760U (en) | 1988-05-11 | 1988-05-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01164760U (en) |
-
1988
- 1988-05-11 JP JP6176888U patent/JPH01164760U/ja active Pending