JPH0165132U - - Google Patents

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Publication number
JPH0165132U
JPH0165132U JP1987159875U JP15987587U JPH0165132U JP H0165132 U JPH0165132 U JP H0165132U JP 1987159875 U JP1987159875 U JP 1987159875U JP 15987587 U JP15987587 U JP 15987587U JP H0165132 U JPH0165132 U JP H0165132U
Authority
JP
Japan
Prior art keywords
magnetic field
electrodes
plasma
discharge
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987159875U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987159875U priority Critical patent/JPH0165132U/ja
Publication of JPH0165132U publication Critical patent/JPH0165132U/ja
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、本考案の一実施例のプラズマ処理装
置の構成図、第２図は、第１図のＡ―Ａ視図、第
３図は、本考案の他の実施例のプラズマ処理装置
の第２図と同一部位図である。 １……処理室、２……電磁石、３……試料、４
……試料台、５……電源、６……永久磁石。 FIG. 1 is a configuration diagram of a plasma processing apparatus according to an embodiment of the present invention, FIG. 2 is a view taken along line AA in FIG. 1, and FIG. 3 is a plasma processing apparatus according to another embodiment of the present invention. This is the same part diagram as Fig. 2 of . 1...Processing chamber, 2...Electromagnet, 3...Sample, 4
...sample stage, 5...power supply, 6...permanent magnet.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 電極間の電界と磁場発生手段により磁界との併
用により放電を生じさせ、該放電で処理ガスをプ
ラズマ化し、該プラズマを利用して試料を処理す
る装置において、磁界強度、極性を個別に制御可
能な前記磁界発生手段を前記電極間外で該電極に
対応して配設したことを特徴とするプラズマ処理
装置。 Magnetic field strength and polarity can be controlled individually in a device that generates a discharge by combining the electric field between electrodes and a magnetic field with a magnetic field, converts the processing gas into plasma by the discharge, and processes the sample using the plasma. A plasma processing apparatus characterized in that the magnetic field generating means is disposed outside between the electrodes and corresponding to the electrodes.
JP1987159875U 1987-10-21 1987-10-21 Pending JPH0165132U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987159875U JPH0165132U (en) 1987-10-21 1987-10-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987159875U JPH0165132U (en) 1987-10-21 1987-10-21

Publications (1)

Publication Number Publication Date
JPH0165132U true JPH0165132U (en) 1989-04-26

Family

ID=31441459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987159875U Pending JPH0165132U (en) 1987-10-21 1987-10-21

Country Status (1)

Country Link
JP (1) JPH0165132U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013149722A (en) * 2012-01-18 2013-08-01 Tokyo Electron Ltd Substrate processing device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013149722A (en) * 2012-01-18 2013-08-01 Tokyo Electron Ltd Substrate processing device
KR20190104436A (en) * 2012-01-18 2019-09-09 도쿄엘렉트론가부시키가이샤 Substrate processing method
US10651012B2 (en) 2012-01-18 2020-05-12 Tokyo Electron Limited Substrate processing method

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