JPH01161650A - 二次イオン質量分析装置 - Google Patents
二次イオン質量分析装置Info
- Publication number
- JPH01161650A JPH01161650A JP62318560A JP31856087A JPH01161650A JP H01161650 A JPH01161650 A JP H01161650A JP 62318560 A JP62318560 A JP 62318560A JP 31856087 A JP31856087 A JP 31856087A JP H01161650 A JPH01161650 A JP H01161650A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- crystal oscillator
- mass
- etching
- depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 claims abstract description 20
- 239000013078 crystal Substances 0.000 claims abstract description 16
- 238000004458 analytical method Methods 0.000 claims abstract description 12
- 150000002500 ions Chemical class 0.000 claims description 28
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 2
- 230000010355 oscillation Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004949 mass spectrometry Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- -1 oxygen or cesium Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000004157 plasmatron Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Landscapes
- Electron Tubes For Measurement (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62318560A JPH01161650A (ja) | 1987-12-18 | 1987-12-18 | 二次イオン質量分析装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62318560A JPH01161650A (ja) | 1987-12-18 | 1987-12-18 | 二次イオン質量分析装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01161650A true JPH01161650A (ja) | 1989-06-26 |
| JPH0578902B2 JPH0578902B2 (enrdf_load_stackoverflow) | 1993-10-29 |
Family
ID=18100494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62318560A Granted JPH01161650A (ja) | 1987-12-18 | 1987-12-18 | 二次イオン質量分析装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01161650A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7794563B2 (en) * | 2005-06-08 | 2010-09-14 | Tdk Corporation | Etching depth measuring device, etching apparatus, and etching depth measuring method |
-
1987
- 1987-12-18 JP JP62318560A patent/JPH01161650A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7794563B2 (en) * | 2005-06-08 | 2010-09-14 | Tdk Corporation | Etching depth measuring device, etching apparatus, and etching depth measuring method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0578902B2 (enrdf_load_stackoverflow) | 1993-10-29 |
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Legal Events
| Date | Code | Title | Description |
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| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
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| A61 | First payment of annual fees (during grant procedure) |
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| LAPS | Cancellation because of no payment of annual fees |