JPH01155025U - - Google Patents
Info
- Publication number
- JPH01155025U JPH01155025U JP4538788U JP4538788U JPH01155025U JP H01155025 U JPH01155025 U JP H01155025U JP 4538788 U JP4538788 U JP 4538788U JP 4538788 U JP4538788 U JP 4538788U JP H01155025 U JPH01155025 U JP H01155025U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- electrode
- drain
- gate
- gate line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims description 9
- 230000007547 defect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
- Transforming Electric Information Into Light Information (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Description
第1図は、本実施例のTFTパネルの一部の平
面図、第2図aは、本実施例のTFTパネル内の
欠陥補償用薄膜トランジスタの断面図、第2図b
は、本実施例のTFTパネル内の画素表示用薄膜
トランジスタの断面図、第3図は、本実施例のT
FTパネルの製造工程図、第4図は、本実施例の
TFTパネルの一部分の概念図、第5図は、従来
のTFTパネルの一部分の概念図である。
13,21′……ゲート電極、14……ゲート
絶縁膜、14′……絶縁膜、15,15′……半
導体膜、17,17′……ドレイン電極、18,
18′……ソース電極、19,19′……透明絶
縁膜、20,23,27―36……画素電極、2
1……遮光金属膜、22……補償ライン、27a
〜36a……画素表示用薄膜トランジスタ、23
b,27b,29b,31b,33b,35b…
…欠陥補償用薄膜トランジスタ。
FIG. 1 is a plan view of a part of the TFT panel of this embodiment, FIG. 2a is a sectional view of a thin film transistor for defect compensation in the TFT panel of this embodiment, and FIG. 2b
is a cross-sectional view of the pixel display thin film transistor in the TFT panel of this example, and FIG. 3 is a cross-sectional view of the TFT panel of this example.
FIG. 4 is a conceptual diagram of a part of the TFT panel of this embodiment, and FIG. 5 is a conceptual diagram of a part of a conventional TFT panel. 13, 21'... Gate electrode, 14... Gate insulating film, 14'... Insulating film, 15, 15'... Semiconductor film, 17, 17'... Drain electrode, 18,
18'... Source electrode, 19, 19'... Transparent insulating film, 20, 23, 27-36... Pixel electrode, 2
1... Light-shielding metal film, 22... Compensation line, 27a
~36a...Thin film transistor for pixel display, 23
b, 27b, 29b, 31b, 33b, 35b...
...Thin film transistor for defect compensation.
Claims (1)
のゲート線と、列方向に配設された複数のドレイ
ン線と、これら第1のゲート線及びドレイン線の
交差部毎に設けられゲート電極が前記第1のゲー
ト線と接続されドレイン電極が前記ドレイン電極
と接続された複数の第1の薄膜トランジスタと、
前記第1のゲート線と前記ドレイン線とで囲まれ
た箇所毎に配設され、前記第1の薄膜トランジス
タのソース電極にそれぞれ接続された複数の画素
電極とドレイン電極及びソース電極がそれぞれ隣
合う画素電極に接続され、前記第1の薄膜トラン
ジスタお欠陥補償するための信号が供給されるゲ
ート電極を有する複数の第2の薄膜トランジスタ
とを備えたことを特徴とする薄膜トランジスタパ
ネル。 A plurality of first electrodes arranged in a row direction on an insulating substrate.
a gate line, a plurality of drain lines arranged in the column direction, a gate electrode provided at each intersection of the first gate line and the drain line, a gate electrode connected to the first gate line, and a drain electrode connected to the first gate line. a plurality of first thin film transistors connected to the drain electrode;
A plurality of pixel electrodes arranged at locations surrounded by the first gate line and the drain line and each connected to a source electrode of the first thin film transistor, and a pixel in which the drain electrode and the source electrode are adjacent to each other. A thin film transistor panel comprising: a plurality of second thin film transistors each having a gate electrode connected to the electrode and supplied with a signal for defect compensation of the first thin film transistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988045387U JPH082656Y2 (en) | 1988-04-04 | 1988-04-04 | Thin film transistor panel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988045387U JPH082656Y2 (en) | 1988-04-04 | 1988-04-04 | Thin film transistor panel |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01155025U true JPH01155025U (en) | 1989-10-25 |
JPH082656Y2 JPH082656Y2 (en) | 1996-01-29 |
Family
ID=31271699
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1988045387U Expired - Lifetime JPH082656Y2 (en) | 1988-04-04 | 1988-04-04 | Thin film transistor panel |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH082656Y2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02287512A (en) * | 1989-04-28 | 1990-11-27 | Sony Corp | Liquid crystal display device |
JP2001125510A (en) * | 1995-11-17 | 2001-05-11 | Semiconductor Energy Lab Co Ltd | Active matrix type el display device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61243483A (en) * | 1985-04-20 | 1986-10-29 | 松下電器産業株式会社 | Active matrix substrate |
-
1988
- 1988-04-04 JP JP1988045387U patent/JPH082656Y2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61243483A (en) * | 1985-04-20 | 1986-10-29 | 松下電器産業株式会社 | Active matrix substrate |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02287512A (en) * | 1989-04-28 | 1990-11-27 | Sony Corp | Liquid crystal display device |
JP2001125510A (en) * | 1995-11-17 | 2001-05-11 | Semiconductor Energy Lab Co Ltd | Active matrix type el display device |
Also Published As
Publication number | Publication date |
---|---|
JPH082656Y2 (en) | 1996-01-29 |