JPH01155025U - - Google Patents

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Publication number
JPH01155025U
JPH01155025U JP4538788U JP4538788U JPH01155025U JP H01155025 U JPH01155025 U JP H01155025U JP 4538788 U JP4538788 U JP 4538788U JP 4538788 U JP4538788 U JP 4538788U JP H01155025 U JPH01155025 U JP H01155025U
Authority
JP
Japan
Prior art keywords
thin film
electrode
drain
gate
gate line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4538788U
Other languages
Japanese (ja)
Other versions
JPH082656Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988045387U priority Critical patent/JPH082656Y2/en
Publication of JPH01155025U publication Critical patent/JPH01155025U/ja
Application granted granted Critical
Publication of JPH082656Y2 publication Critical patent/JPH082656Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Transforming Electric Information Into Light Information (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本実施例のTFTパネルの一部の平
面図、第2図aは、本実施例のTFTパネル内の
欠陥補償用薄膜トランジスタの断面図、第2図b
は、本実施例のTFTパネル内の画素表示用薄膜
トランジスタの断面図、第3図は、本実施例のT
FTパネルの製造工程図、第4図は、本実施例の
TFTパネルの一部分の概念図、第5図は、従来
のTFTパネルの一部分の概念図である。 13,21′……ゲート電極、14……ゲート
絶縁膜、14′……絶縁膜、15,15′……半
導体膜、17,17′……ドレイン電極、18,
18′……ソース電極、19,19′……透明絶
縁膜、20,23,27―36……画素電極、2
1……遮光金属膜、22……補償ライン、27a
〜36a……画素表示用薄膜トランジスタ、23
b,27b,29b,31b,33b,35b…
…欠陥補償用薄膜トランジスタ。
FIG. 1 is a plan view of a part of the TFT panel of this embodiment, FIG. 2a is a sectional view of a thin film transistor for defect compensation in the TFT panel of this embodiment, and FIG. 2b
is a cross-sectional view of the pixel display thin film transistor in the TFT panel of this example, and FIG. 3 is a cross-sectional view of the TFT panel of this example.
FIG. 4 is a conceptual diagram of a part of the TFT panel of this embodiment, and FIG. 5 is a conceptual diagram of a part of a conventional TFT panel. 13, 21'... Gate electrode, 14... Gate insulating film, 14'... Insulating film, 15, 15'... Semiconductor film, 17, 17'... Drain electrode, 18,
18'... Source electrode, 19, 19'... Transparent insulating film, 20, 23, 27-36... Pixel electrode, 2
1... Light-shielding metal film, 22... Compensation line, 27a
~36a...Thin film transistor for pixel display, 23
b, 27b, 29b, 31b, 33b, 35b...
...Thin film transistor for defect compensation.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 絶縁性基板上に行方向に配設された複数の第1
のゲート線と、列方向に配設された複数のドレイ
ン線と、これら第1のゲート線及びドレイン線の
交差部毎に設けられゲート電極が前記第1のゲー
ト線と接続されドレイン電極が前記ドレイン電極
と接続された複数の第1の薄膜トランジスタと、
前記第1のゲート線と前記ドレイン線とで囲まれ
た箇所毎に配設され、前記第1の薄膜トランジス
タのソース電極にそれぞれ接続された複数の画素
電極とドレイン電極及びソース電極がそれぞれ隣
合う画素電極に接続され、前記第1の薄膜トラン
ジスタお欠陥補償するための信号が供給されるゲ
ート電極を有する複数の第2の薄膜トランジスタ
とを備えたことを特徴とする薄膜トランジスタパ
ネル。
A plurality of first electrodes arranged in a row direction on an insulating substrate.
a gate line, a plurality of drain lines arranged in the column direction, a gate electrode provided at each intersection of the first gate line and the drain line, a gate electrode connected to the first gate line, and a drain electrode connected to the first gate line. a plurality of first thin film transistors connected to the drain electrode;
A plurality of pixel electrodes arranged at locations surrounded by the first gate line and the drain line and each connected to a source electrode of the first thin film transistor, and a pixel in which the drain electrode and the source electrode are adjacent to each other. A thin film transistor panel comprising: a plurality of second thin film transistors each having a gate electrode connected to the electrode and supplied with a signal for defect compensation of the first thin film transistor.
JP1988045387U 1988-04-04 1988-04-04 Thin film transistor panel Expired - Lifetime JPH082656Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988045387U JPH082656Y2 (en) 1988-04-04 1988-04-04 Thin film transistor panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988045387U JPH082656Y2 (en) 1988-04-04 1988-04-04 Thin film transistor panel

Publications (2)

Publication Number Publication Date
JPH01155025U true JPH01155025U (en) 1989-10-25
JPH082656Y2 JPH082656Y2 (en) 1996-01-29

Family

ID=31271699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988045387U Expired - Lifetime JPH082656Y2 (en) 1988-04-04 1988-04-04 Thin film transistor panel

Country Status (1)

Country Link
JP (1) JPH082656Y2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02287512A (en) * 1989-04-28 1990-11-27 Sony Corp Liquid crystal display device
JP2001125510A (en) * 1995-11-17 2001-05-11 Semiconductor Energy Lab Co Ltd Active matrix type el display device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61243483A (en) * 1985-04-20 1986-10-29 松下電器産業株式会社 Active matrix substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61243483A (en) * 1985-04-20 1986-10-29 松下電器産業株式会社 Active matrix substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02287512A (en) * 1989-04-28 1990-11-27 Sony Corp Liquid crystal display device
JP2001125510A (en) * 1995-11-17 2001-05-11 Semiconductor Energy Lab Co Ltd Active matrix type el display device

Also Published As

Publication number Publication date
JPH082656Y2 (en) 1996-01-29

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