JPH01149620U - - Google Patents

Info

Publication number
JPH01149620U
JPH01149620U JP4647288U JP4647288U JPH01149620U JP H01149620 U JPH01149620 U JP H01149620U JP 4647288 U JP4647288 U JP 4647288U JP 4647288 U JP4647288 U JP 4647288U JP H01149620 U JPH01149620 U JP H01149620U
Authority
JP
Japan
Prior art keywords
thin film
film transistor
pixel electrode
gate lines
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4647288U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4647288U priority Critical patent/JPH01149620U/ja
Publication of JPH01149620U publication Critical patent/JPH01149620U/ja
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Transforming Electric Information Into Light Information (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本考案の一実施例のTFTパネルの
、TFTを形成した直後の部分平面図、第2図は
、TFTが正常であつた場合のコンタクトホール
の形成位置を示す上記TFTパネルの部分平面図
、第3図は、TFTに欠陥があつた場合のコンタ
クトホールの形成位置を示す上記TFTパネルの
部分平面図、第4図は、上記第3図のA―A′線
で切断した上記TFTパネルの断面図、第5図は
、液晶表示装置の斜視断面図である。 10……絶縁基板、11……ゲートライン、1
2……ドレインライン、20……TFT、21…
…ドレイン電極、22……ソース電極、23……
ゲート電極、24,26……コンタクトホール、
25……画素電極、27……ゲート絶縁膜、28
……半導体膜。
FIG. 1 is a partial plan view of a TFT panel according to an embodiment of the present invention immediately after forming TFTs, and FIG. 2 is a partial plan view of the TFT panel showing the formation positions of contact holes when the TFT is normal. FIG. 3 is a partial plan view of the TFT panel showing the formation position of a contact hole in the event of a defect in the TFT, and FIG. 4 is a partial plan view taken along line A-A' in FIG. 3 above. FIG. 5, which is a sectional view of the TFT panel, is a perspective sectional view of the liquid crystal display device. 10...Insulating substrate, 11...Gate line, 1
2...Drain line, 20...TFT, 21...
...Drain electrode, 22...Source electrode, 23...
Gate electrode, 24, 26...contact hole,
25...Pixel electrode, 27...Gate insulating film, 28
...Semiconductor film.

Claims (1)

【実用新案登録請求の範囲】 透明な絶縁性基板上に、縦横に複数配設したゲ
ートライン及びドレインラインと、これらゲート
ラインとドレインラインとが交差する箇所毎に設
けられた薄膜トランジスタと、この薄膜トランジ
スタのソース電極と接続された複数の画素電極と
を備えた薄膜トランジスタパネルにおいて、 前記画素電極は、その画素電極に隣接して設け
られた画素電極を駆動する薄膜トランジスタのソ
ース電極と絶縁層を介して重なる突出部が形成さ
れていることを特徴とする薄膜トランジスタパネ
ル。
[Claims for Utility Model Registration] A plurality of gate lines and drain lines arranged vertically and horizontally on a transparent insulating substrate, a thin film transistor provided at each intersection of these gate lines and drain lines, and this thin film transistor In a thin film transistor panel including a plurality of pixel electrodes connected to a source electrode of the pixel electrode, the pixel electrode overlaps, via an insulating layer, the source electrode of a thin film transistor that drives the pixel electrode provided adjacent to the pixel electrode. A thin film transistor panel characterized in that a protrusion is formed.
JP4647288U 1988-04-06 1988-04-06 Pending JPH01149620U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4647288U JPH01149620U (en) 1988-04-06 1988-04-06

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4647288U JPH01149620U (en) 1988-04-06 1988-04-06

Publications (1)

Publication Number Publication Date
JPH01149620U true JPH01149620U (en) 1989-10-17

Family

ID=31272740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4647288U Pending JPH01149620U (en) 1988-04-06 1988-04-06

Country Status (1)

Country Link
JP (1) JPH01149620U (en)

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