KR20030058082A - Liquid Crystal Panel having double marking pad - Google Patents
Liquid Crystal Panel having double marking pad Download PDFInfo
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- KR20030058082A KR20030058082A KR1020010088468A KR20010088468A KR20030058082A KR 20030058082 A KR20030058082 A KR 20030058082A KR 1020010088468 A KR1020010088468 A KR 1020010088468A KR 20010088468 A KR20010088468 A KR 20010088468A KR 20030058082 A KR20030058082 A KR 20030058082A
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- Prior art keywords
- gate
- pad
- marking
- pads
- liquid crystal
- Prior art date
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- 239000004973 liquid crystal related substance Substances 0.000 title abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000010408 film Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 230000009977 dual effect Effects 0.000 claims abstract 6
- 238000000034 method Methods 0.000 claims description 16
- 230000001681 protective effect Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000013067 intermediate product Substances 0.000 description 1
- 238000010330 laser marking Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
- G02F1/136281—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon having a transmissive semiconductor substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
Abstract
Description
본 발명은 액정패널에 관한 것으로, 보다 구체적으로 액정패널의 이력 관리를 위한 마킹패드에 관한 것이다.The present invention relates to a liquid crystal panel, and more particularly, to a marking pad for history management of a liquid crystal panel.
액정패널은 일반적으로 박막트랜지스터와 화소전극이 형성되어 있는 하부기판과, 칼라필터와 공통전극이 형성되어 있는 상부기판과, 그리고 상기 양기판 사이에 형성되어 있는 액정층으로 구성되어 있다.A liquid crystal panel generally includes a lower substrate on which a thin film transistor and a pixel electrode are formed, an upper substrate on which a color filter and a common electrode are formed, and a liquid crystal layer formed between the two substrates.
이와 같은 액정패널은 그 하부에 광원으로서 형성되는 백라이트 및 액정패널의 패드부와 연결되어 액정패널에 신호를 인가하는 구동회로부와 함께 하나의 중간제품인 액정모듈을 구성하게 된다. 물론, 광원으로서 외부광을 사용하는 경우는 백라이트가 형성되지 않는다.Such a liquid crystal panel is connected to a backlight formed as a light source and a pad portion of the liquid crystal panel at the bottom thereof, and forms a liquid crystal module, which is one intermediate product, with a driving circuit unit for applying a signal to the liquid crystal panel. Of course, no backlight is formed when external light is used as the light source.
이와 같은 액정모듈은 노트북 컴퓨터나, 컴퓨터 모니터, 휴대용 단말기 등 다양한 제품에 적용되게 되므로, 상기 액정패널을 이용하여 이와 같은 완성제품을 제작하기 위해서는 수많은 중간 공정이 수행되게 된다.Since the liquid crystal module is applied to various products such as a notebook computer, a computer monitor, a portable terminal, and the like, a number of intermediate processes are performed to manufacture such a finished product using the liquid crystal panel.
따라서, 상기 중간 공정들을 원활히 진행하기 위해서는 액정패널의 모델명, 생산연월 등의 이력관리가 중요하다.Therefore, in order to smoothly perform the intermediate processes, it is important to manage the history of the model name, production date, and the like of the liquid crystal panel.
이와 같은 액정패널의 이력관리를 위해서 종래에는 기판에 마킹패드를 형성하여 상기 마킹패드에 제품의 이력을 기재하는 방법을 사용하였는데, 이하, 첨부된 도면을 참조로 종래의 이력 기재 방법에 대해서 설명한다.In order to manage the history of the liquid crystal panel in the related art, a method of writing a marking pad on a substrate and writing a product history on the marking pad has been used. Hereinafter, a conventional history writing method will be described with reference to the accompanying drawings. .
도 1은 마킹패드가 형성되어 있는 종래의 하부기판의 평면도이고, 도 2a 및 도 2b는 도 1의 A-A라인에 해당하는 일형태에 따른 단면도이다.1 is a plan view of a conventional lower substrate on which a marking pad is formed, and FIGS. 2A and 2B are cross-sectional views of one embodiment corresponding to the A-A line of FIG. 1.
우선, 도 1과 같이, 하부기판(1) 상에는 복수개의 게이트라인(3)과 데이터라인(5)이 서로 교차하도록 형성되어 화소영역을 정의하고, 상기 게이트라인(3)과 데이터라인(5)의 교차점에는 게이트전극, 게이트절연막, 반도체층, 오믹콘택층, 소스/드레인 전극, 및 보호막으로 구성된 박막트랜지스터(7)가 형성되어 있으며, 상기 드레인 전극과 전기적으로 연결되며 상기 화소영역 내에 화소전극(9)이 형성되어 있다.First, as shown in FIG. 1, a plurality of gate lines 3 and data lines 5 are formed on the lower substrate 1 to cross each other to define a pixel area, and the gate lines 3 and data lines 5 are defined. A thin film transistor 7 including a gate electrode, a gate insulating film, a semiconductor layer, an ohmic contact layer, a source / drain electrode, and a passivation layer is formed at an intersection point of the pixel electrode. 9) is formed.
그리고, 상기 게이트라인(3)과 데이터라인(5)의 끝에는 액정패널을 구동회로부와 연결시키기 위한 게이트패드(4)와 데이터패드(6)가 형성되어 패드영역(빗금 영역)을 정의하고, 상기 패드영역의 일측 모서리부에는 마킹패드(10)가 형성되어 있다. 이때, 상기 패드영역(빗금 영역)은 상기 화소영역의 외곽부로부터, 상기 하부기판(1)과 그 대향기판이 합착된 후 단위셀로 절단되는 라인(12)까지의 영역을 말한다.At the ends of the gate line 3 and the data line 5, a gate pad 4 and a data pad 6 for connecting the liquid crystal panel with the driving circuit unit are formed to define a pad area (hatched area). A marking pad 10 is formed at one corner of the pad area. In this case, the pad area (hatched area) refers to an area from the outer portion of the pixel area to the line 12 cut into unit cells after the lower substrate 1 and the counter substrate are bonded to each other.
한편, 이와 같은 마킹패드(10)는 상기 게이트라인(3) 형성시나, 또는 데이터라인(5) 형성시에 패터닝되어 형성된다.The marking pad 10 is patterned and formed when the gate line 3 is formed or when the data line 5 is formed.
이때, 상기 마킹패드(10)가 게이트라인(3) 형성시 패턴 형성된 경우는 도 2a와 같이 게이트라인(3)과 동일층, 즉 보호막(16) 및 게이트절연막(14) 하부에 게이트라인(3)과 동일물질로 마킹패드(10)가 형성되게 되고, 데이터라인(5) 형성시 패턴 형성된 경우는 도 2b와 같이 데이터라인(5)과 동일층, 즉 게이트절연막(14)과 보호막(16) 사이에 데이터라인(5)과 동일물질로 마킹패드(10)가 형성되게 된다.In this case, when the marking pad 10 is patterned when the gate line 3 is formed, the gate line 3 is formed on the same layer as the gate line 3, that is, under the passivation layer 16 and the gate insulating layer 14 as shown in FIG. 2A. In the case where the marking pad 10 is formed of the same material and the pattern is formed when the data line 5 is formed, the same layer as the data line 5, that is, the gate insulating layer 14 and the passivation layer 16, is formed as shown in FIG. 2B. The marking pad 10 is formed of the same material as the data line 5 therebetween.
그후, 상기 마킹 패드(10)의 상부에 레이저 장치를 위치시키고 레이저를 조사하여 모델명, 생산연월, 로트(lot)번호등을 기재하게 된다.Thereafter, the laser device is placed on the marking pad 10 and irradiated with a laser to describe a model name, a production date, a lot number, and the like.
그러나, 이와 같은 마킹패드(10)는 게이트라인(3) 또는 데이터라인(5)과 동일층에 형성되므로, 상기 마킹패드(10)를 패턴 형성 후에 보호막 형성공정, 보호막에 콘택홀을 형성하는 공정, 및 화소전극 형성공정 등 많은 패턴형성 공정이 행해지게 된다.However, since the marking pad 10 is formed on the same layer as the gate line 3 or the data line 5, a process of forming the protective pad after forming the patterning pad 10 and forming a contact hole in the protective film is performed. A large number of pattern forming processes, such as, and pixel electrode forming processes, are performed.
따라서, 이와 같은 마킹패드(10) 형성 공중 후에 행해지는 패턴 형성공정 중, 특히 패턴 형성시 식각액 등에 의해 상기 마킹패드(10)가 손상될 우려가 있다. 이와 같이 마킹패드(10)가 손상되면, 레이저 조사에 의한 이력 기재가 원활히 이루어지지 못하여 제품생산이 어려움이 발생되게 된다.Therefore, the marking pad 10 may be damaged by an etching solution or the like during the pattern formation process performed after the marking pad 10 is formed in the air. When the marking pad 10 is damaged in this way, the history substrate is not made smoothly by laser irradiation is difficult to produce the product.
본 발명은 상기 문제점을 감안하여 안출된 것으로서, 본 발명은 목적은 마킹패드의 손상을 최소로하여 액정패널의 이력관리를 원할하게 하고자 하는 것이다.The present invention has been made in view of the above problems, and an object of the present invention is to facilitate the history management of the liquid crystal panel with minimal damage to the marking pad.
도 1은 마킹패드가 형성되어 있는 종래의 하부기판의 평면도이다.1 is a plan view of a conventional lower substrate on which a marking pad is formed.
도 2a 및 도 2b는 도 1의 A-A라인에 해당하는 일형태에 따른 단면도이다.2A and 2B are cross-sectional views of one embodiment corresponding to the A-A line in FIG. 1.
도 3a는 본 발명의 일 실시예에 따른 이중 마킹패드를 구비한 액정패널의 평면도이다.3A is a plan view of a liquid crystal panel having a double marking pad according to an embodiment of the present invention.
도 3b는 도 3a의 "가" 영역의 확대도이다.FIG. 3B is an enlarged view of the “low” area of FIG. 3A.
도 4a 내지 도 4c는 도 3a의 B-B라인의 일 실시예에 따른 단면도이다.4A through 4C are cross-sectional views according to an exemplary embodiment of line B-B of FIG. 3A.
<도면의 주요부에 대한 설명><Description of main parts of drawing>
1, 100 : 기판 3, 130 : 게이트라인1, 100: substrate 3, 130: gate line
4, 140 : 게이트패드 5, 150 : 데이터라인4, 140: gate pad 5, 150: data line
6, 160 : 데이터패드 7, 170 : 박막트랜지스터6, 160: data pad 7, 170: thin film transistor
9, 190 : 화소전극 200 : 이중 마킹패드9, 190: pixel electrode 200: double marking pad
10, 200a, 200b, 200c : 마킹패드10, 200a, 200b, 200c: marking pad
14, 240 : 게이트절연막 16, 260 : 보호막14, 240: gate insulating film 16, 260: protective film
상기 목적을 달성하기 위해서, 본 발명은 기판상에 종횡으로 형성되어 화소영역을 정의하는 복수개의 게이트라인 및 데이터라인; 상기 게이트라인 및 데이터라인과 연결되어 패드영역을 정의하는 복수개의 게이트패드 및 데이터패드; 상기 게이트라인 및 데이터라인과 연결되며, 게이트전극, 게이트절연막, 반도체층, 소스/드레인 전극, 및 보호막으로 구성되는 박막트랜지스터; 상기 박막트랜지스터와 연결되며 상기 화소영역 내에 형성된 화소전극; 및 상기 패드영역 내에 형성되며, 서로 다른 두 개의 층에 이력이 기재되어 있는 이중 마킹패드를 포함하여 이루어진 액정패널을 제공한다.In order to achieve the above object, the present invention includes a plurality of gate lines and data lines formed vertically and horizontally on a substrate to define a pixel region; A plurality of gate pads and data pads connected to the gate lines and the data lines to define pad regions; A thin film transistor connected to the gate line and the data line, the thin film transistor comprising a gate electrode, a gate insulating film, a semiconductor layer, a source / drain electrode, and a protective film; A pixel electrode connected to the thin film transistor and formed in the pixel area; And a double marking pad formed in the pad area and having a history written on two different layers.
즉, 본 발명에 따른 액정패널은 서로 다른 두 개의 층에 이중으로 이력을 기재할 수 있도록 마킹패드를 이중으로 형성함으로써, 후 공정 중에 비록 하나의 마킹패드가 소실된다 하더라도 나머지 마킹패드에 의해 제품의 이력관리를 할 수 있도록 한 것이다.That is, the liquid crystal panel according to the present invention is formed by double marking pads to record the history in two different layers, so that even if one marking pad is lost during the subsequent process, It is to manage the history.
이하, 첨부된 도면을 참조로 본 발명의 바람직한 실시예를 설명한다.Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.
도 3a는 본 발명의 일 실시예에 따른 이중 마킹패드를 구비한 액정패널의 평면도이고, 도 3b는 도 3a의 "가" 영역의 확대도이며, 도 4a 내지 도 4c는 도 3a의 B-B라인의 일 실시예에 따른 단면도이다.3A is a plan view of a liquid crystal panel with a double marking pad according to an embodiment of the present invention, FIG. 3B is an enlarged view of the "low" region of FIG. 3A, and FIGS. 4A to 4C are views of the BB line of FIG. A cross section according to one embodiment.
도 3a와 같이, 본 발명의 일 실시예에 따른 액정패널은 우선, 기판(100)상에 복수개의 게이트라인(130)과 데이터라인(150)이 서로 교차하도록 종횡으로 형성되어 화소영역을 정의하고 있다. 이때, 상기 게이트라인(130)은 Al, Al합금, Mo/Al, 또는 Cr/Al 등의 물질로 형성될 수 있고, 상기 데이터라인(150)은 Al, Cr, Ti, Al합금 등의 물질로 형성될 수 있다.As shown in FIG. 3A, a liquid crystal panel according to an exemplary embodiment of the present invention is first formed vertically and horizontally so that a plurality of gate lines 130 and data lines 150 cross each other on a substrate 100 to define a pixel area. have. In this case, the gate line 130 may be formed of a material such as Al, Al alloy, Mo / Al, or Cr / Al, the data line 150 is made of a material such as Al, Cr, Ti, Al alloy Can be formed.
그리고, 상기 게이트라인(130)과 데이터라인(150)의 말단에는 액정패널을 구동회로부와 연결시키기 위한 게이트패드(140)와 데이터패드(160)가 형성되어 패드영역(빗금 영역)을 정의하고 있다.In addition, a gate pad 140 and a data pad 160 for connecting the liquid crystal panel to the driving circuit unit are formed at ends of the gate line 130 and the data line 150 to define a pad area (hatched area). .
상기 패드영역(빗금 영역)은 상기 화소영역의 외곽부로부터, 상기 기판(100)과 그 대향기판이 합착된 후 단위셀로 절단되는 라인(220)까지의 영역을 말한다.The pad area (hatched area) refers to an area from an outer portion of the pixel area to a line 220 where the substrate 100 and the counter substrate are bonded to each other and cut into unit cells.
그리고, 상기 게이트라인(130)과 데이터라인(150)의 교차점에는 게이트전극,게이트절연막, 반도체층, 소스/드레인 전극, 및 보호막으로 구성되는 박막트랜지스터(170)가 형성되어 있고, 상기 화소영역 내에 상기 드레인 전극과 연결되는 화소전극(190)이 형성되어 있다.At the intersection of the gate line 130 and the data line 150, a thin film transistor 170 including a gate electrode, a gate insulating film, a semiconductor layer, a source / drain electrode, and a passivation layer is formed. The pixel electrode 190 connected to the drain electrode is formed.
이때, 상기 게이트전극은 상기 게이트라인(130) 형성시에 그와 동일물질로 형성되고, 상기 게이트절연막은 상기 기판 전면에 SiNx, 또는 SiOx로 형성되며, 상기 반도체층은 상기 게이트절연막 위에 비정질실리콘(a-Si) 또는 다결정실리콘(p-Si)으로로 형성된다. 또한, 상기 소스/드레인 전극은 상기 데이터라인(150) 형성시에 그와 동일물질로 형성되고, 상기 보호막은 기판 전면에 SiNx 또는 SiOx와 같은 무기절연막이나 BCB(Benzocyclobutene)과 같은 유기절연막으로 형성된다.At this time, the gate electrode is formed of the same material as the gate line 130 is formed, the gate insulating film is formed of SiNx or SiOx on the entire surface of the substrate, the semiconductor layer is formed of amorphous silicon ( a-Si) or polycrystalline silicon (p-Si). In addition, the source / drain electrodes may be formed of the same material as the data line 150, and the passivation layer may be formed of an inorganic insulating film such as SiNx or SiOx or an organic insulating film such as BCB (Benzocyclobutene) on the entire substrate. .
그리고, 상기 패드영역(빗금 영역) 내에는 서로 다른 두 개의 층에 이력이 기재되어 있는 이중 마킹패드(200)가 형성되어 있다.In the pad area (hatched area), a double marking pad 200 having a history written on two different layers is formed.
이때, 상기 이중 마킹패드(200)는 도3b와 같이, 서로 다른 두 개의 층에 형성된 이중 마킹패드에 레이저 마킹장비를 이용하여 액정패널의 이력 사항을 식각하여 형성되게 된다.In this case, the double marking pad 200 is formed by etching the history of the liquid crystal panel using a laser marking equipment on the double marking pads formed on two different layers as shown in FIG. 3B.
이와 같은 이중 마킹패드(200)는 도 4a 내지 도 4c와 같이 다양한 서로 다른 두 개의 층에 형성될 수 있다.The double marking pad 200 may be formed on two different layers as shown in FIGS. 4A to 4C.
즉, 상기 이중 마킹패드(200)는, 도 4a와 같이, 게이트절연막(240)을 사이에 두고, 게이트라인(130)과 동일층에 형성된 하나의 마킹패드(200a)와 반도체층과 동일층에 형성된 다른 하나의 마킹패드(200b)로 구성될 수도 있고, 도 4b와 같이, 게이트절연막(240)을 사이에 두고, 게이트라인(130)과 동일층에 형성된 하나의 마킹패드(200a)와 데이터라인(150)과 동일층에 형성된 다른 하나의 마킹패드(200c)로 구성될 수도 있으며, 도 4c와 같이, 반도체층과 동일층에 형성된 하나의 마킹패드(200b)와 데이터라인(150)과 동일층에 형성된 다른 하나의 마킹패드(200c)로 구성될 수 있다.That is, as shown in FIG. 4A, the double marking pad 200 is disposed on the same layer as the semiconductor layer and one marking pad 200a formed on the same layer as the gate line 130 with the gate insulating layer 240 interposed therebetween. Another marking pad 200b may be formed, or as shown in FIG. 4B, one marking pad 200a and a data line formed on the same layer as the gate line 130 with the gate insulating layer 240 interposed therebetween. Another marking pad 200c formed on the same layer as 150 may be formed, and as shown in FIG. 4C, one marking pad 200b formed on the same layer as the semiconductor layer and the same layer as the data line 150 may be formed. It may be composed of one other marking pad (200c) formed in.
이때, 상기 설명되지 않은 도면부호 260은 보호막을 나타낸다.In this case, reference numeral 260, which is not described above, indicates a protective film.
상기 이중 마킹패드(200)는 상기 게이트라인(130), 상기 반도체층, 또는 상기 데이터라인(150)의 패턴형성시 그 형성물질과 동일물질로 패턴형성함으로써, 별도의 추가 공정 없이 형성될 수 있다.The double marking pad 200 may be formed without a separate process by forming a pattern of the same material as the material of forming the gate line 130, the semiconductor layer, or the data line 150. .
또한, 상기 이중 마킹패드(200)는 각각의 마킹패드가 서로 겹쳐지도록 형성시키는 것이 바람직하고, 상기 패드 영역내에 복수개 형성시키는 것도 가능하다.In addition, the double marking pads 200 may be formed so that each marking pad overlaps each other, and a plurality of the double marking pads 200 may be formed in the pad area.
이와 같이, 이중으로 형성된 마킹패드(200)에는 레이저 조사를 통해 모델명, 생산연월, 로트(lot)번호 등이 기재됨으로써, 결국 제품의 이력이 이중으로 기재되어 있는 마킹패드가 형성된다.As described above, the marking pad 200 formed as a double is provided with a model name, a production date, a lot number, and the like through laser irradiation, thereby forming a marking pad in which the history of the product is described in duplicate.
상기 구성에 의한 본 발명에 따른 액정패널은 마킹패드를 이중으로 형성하여 비록 공정중 하나의 마킹패드가 소실된다 하더라도, 액정패널의 이력관리가 가능하게 된다.In the liquid crystal panel according to the present invention having the above configuration, the marking pad may be formed in duplicate so that the history management of the liquid crystal panel is possible even if one marking pad is lost in the process.
Claims (6)
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| KR100840325B1 (en) * | 2002-05-06 | 2008-06-20 | 삼성전자주식회사 | A panel for liquid crystal display |
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| JPS60217659A (en) * | 1984-04-13 | 1985-10-31 | Hitachi Ltd | Manufacture of semiconductor device |
| JP2734183B2 (en) * | 1990-07-19 | 1998-03-30 | 日本電気株式会社 | Liquid crystal display device |
| JPH08201762A (en) * | 1995-01-27 | 1996-08-09 | Toshiba Corp | Substrate identifying means for liquid crystal display device |
| JP3554101B2 (en) * | 1996-03-27 | 2004-08-18 | セイコーエプソン株式会社 | Display device and electronic device using the same |
| JPH1144889A (en) * | 1997-07-25 | 1999-02-16 | Seiko Epson Corp | Liquid crystal panel substrate with alignment mark, its production and liquid crystal display panel |
| KR100394069B1 (en) * | 1999-09-01 | 2003-08-06 | 엘지.필립스 엘시디 주식회사 | Identification making portion in liquid crystal display panel and fabricating method thereof |
| JP2001075119A (en) * | 1999-09-07 | 2001-03-23 | Canon Inc | Recognition mark structure for alignment and liquid crystal device |
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