KR100840325B1 - A panel for liquid crystal display - Google Patents

Abstract

The thin film transistor substrate for a liquid crystal display according to the present invention includes a gate line for transferring a scan signal, a gate line for transferring a scan signal, a data line for defining a pixel region and transferring an image signal, A pixel electrode formed in a pixel region and made of a transparent conductive material such as ITO (indium tin oxide) or IZO (indium zinc oxide) or a conductive material having reflectivity, a gate electrode formed in a portion where a gate wiring and a data wiring intersect, And a thin film transistor which is electrically connected to the data line and controls a video signal transmitted to the pixel electrode according to a scan signal through a channel portion of the semiconductor layer. In addition, a pad portion, which is connected to a signal line and receives a signal from the outside and transmits the signal to the signal line, is formed in a peripheral portion outside the screen display portion, and an identification number portion in which an identification number is formed to impart identification power to the liquid crystal cell region . At this time, the identification number part is composed of the first to third thin films each having the same layer as the gate wiring, the semiconductor layer and the data wiring, and the identification number is displayed as a second thin film exposed through the opening in the third thin film have.

Liquid crystal display, pad, identification number, liquid crystal cell

Description

[0001] A PANEL FOR LIQUID CRYSTAL DISPLAY [0002]

1 is a view showing a substrate for manufacturing a thin film transistor substrate for a liquid crystal display according to an embodiment of the present invention,

2 is a layout diagram schematically showing elements and wirings formed in one thin film transistor substrate for a liquid crystal display according to an embodiment of the present invention,

FIG. 3 is a layout view of a TFT substrate for a liquid crystal display according to an exemplary embodiment of the present invention. FIG. 3 is an enlarged view of one pixel and pads in FIG. 2,

Sectional view taken along the line IV-IV 'of the thin film transistor substrate shown in FIG. 4 and FIG. 3,

FIG. 5 is an enlarged cross-sectional view of a portion I in which the identification number of the liquid crystal cell is described in FIG. 2. FIG.

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate for a liquid crystal display device, and more particularly to a substrate for a liquid crystal display device in which cell identification numbers are described in units of liquid crystal cells.

As one of widely used flat panel display devices, a liquid crystal display device includes two substrates on which a plurality of electrodes for generating an electric field are formed, a liquid crystal layer injected between two substrates, And is a display device for adjusting the amount of transmitted light by rearranging the liquid crystal molecules of the liquid crystal layer by applying a voltage to the electrodes. Among the various properties of a liquid crystal, a property of changing the arrangement of molecules when a voltage is applied is used. In a liquid crystal display device using light transmission or reflection, a liquid crystal does not self-emit light, and thus a light source is required internally or externally.

At this time, a thin firm transistor array panel is used as a circuit substrate for independently driving each pixel in a liquid crystal display device. In the thin film transistor substrate, a scanning signal wiring or a gate wiring for transferring a scanning signal and an image signal line or a data wiring for transferring an image signal are formed and connected to the thin film transistor and the thin film transistor connected to the gate wiring and the data wiring, And a pixel electrode used for display.

The thin film transistor substrate is completed by depositing an insulating material for wiring conductive material or interlayer insulation on a transparent insulating substrate and patterning it by a photolithography process using a mask. And a mother glass including a plurality of unit liquid crystal cell regions corresponding to the plurality of unit liquid crystal cell regions corresponding to the plurality of unit liquid crystal cell regions.

At this time, in order to give the identification capability to the liquid crystal cell region as a unit when the substrate is transferred or the unit manufacturing process is carried out in the manufacturing process, the identification number is written in the upper part of the substrate in units of each cell region, It is common to form one wiring at the time of patterning in the photolithography process to be formed.

However, when the size of the thin film transistor substrate is reduced to 5 "or less, the area of the liquid crystal cell becomes small and the area where the identification number can be written becomes small, so the identification number should be small. In this case, It becomes very difficult to secure.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a liquid crystal display device substrate that can ensure readability of an identification number.

In order to accomplish the above technical object, the substrate for a liquid crystal display according to the present invention has at least two layers formed with identification numbers.

More particularly, the thin film transistor substrate for a liquid crystal display according to the present invention includes a plurality of gate wirings and data wirings crossing each other for transmitting scan signals or image signals, A screen display unit electrically connected to the thin film transistor and arranged to control a video signal transmitted to the pixel electrode through a channel part of the semiconductor layer in accordance with a scanning signal, And a peripheral portion including an identification number portion in which an identification number is formed. At this time, the identification number is formed of at least two thin films.

It is preferable that each of the first to third thin films is formed of the same layer as the gate wiring, the semiconductor layer, and the data wiring, Is preferably patterned in the third thin film so that the second thin film is exposed.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

In the drawings, the thickness is enlarged to clearly represent the layers and regions. Like parts are designated with like reference numerals throughout the specification. It will be understood that when an element such as a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the element directly over another element, Conversely, when a part is "directly over" another part, it means that there is no other part in the middle.

A substrate for a liquid crystal display according to an embodiment of the present invention will now be described in detail with reference to the drawings.

First, the structure of a thin film transistor substrate according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 5. FIG.                     

As shown in FIG. 1, a plurality of liquid crystal cell regions of a substrate for a liquid crystal display device are simultaneously formed on one mother glass. For example, as shown in FIG. 1, nine liquid crystal cell regions 210, 220, 230, 240, 250, 260, 270, 280 and 290 of a substrate for a liquid crystal display are formed on one mother glass substrate The liquid crystal cell regions 210, 220, 230, 240, 250, 260, 270, 280 and 290 of the substrate include a screen display portion D composed of a plurality of pixels, P). A thin film transistor including mainly a semiconductor layer, a wiring including a gate wiring or a data wiring, pixel electrodes and the like are repeatedly arranged in the form of a matrix in the screen display portion D, and the peripheral portion P is connected to the driving elements An identification number for giving an identification function to the liquid crystal cell regions 210, 220, 230, 240, 250, 260, 270, 280, and 290,

When a liquid crystal display device is formed, a plurality of bundles are usually transferred in units of units, and identification numbers are determined according to these units, and each manufacturing unit process proceeds.

FIG. 2 is a layout diagram schematically showing the arrangement of a thin film transistor substrate for a liquid crystal display formed in one panel region in FIG.

The substrate for a liquid crystal display according to an embodiment of the present invention includes a gate wiring 120 formed in a lateral direction and transmitting a scanning signal, a gate wiring 120 intersecting the gate wiring 120, (Not shown) formed of a transparent conductive material or a conductive material having reflectivity, such as ITO (indium tin oxide) or IZO (indium zinc oxide), formed in the pixel region of the matrix array, A thin film transistor (TFT) 120 which is formed at the intersection of the data line 120 and the data line 160 and is electrically connected to the gate line 120 and the data line 160 to control an image signal transmitted to the pixel electrode in accordance with a scanning signal (Not shown), which is referred to as a thin film transistor array substrate. At this time, the thin film transistor array substrate is composed of a set of pixel regions defined by intersection of a plurality of wirings 120 and 160, and includes a screen display portion D on which an image is displayed, a gate wiring 120 and a data wiring 160, A plurality of gate pads (not shown) connected to one end of the gate lines 120 and the data lines 160, respectively, for receiving scan signals or data signals from the outside and transmitting the gate signals to the gate lines 120 and the data lines 160, And a peripheral portion where an identification number I is formed to give identification capability to the liquid crystal cell regions 210, 220, 230, 240, 250, 260, 270, 280, P).

3 to 5 are enlarged views of thin film transistors, pixel electrodes, wirings and peripheral pads of the screen display unit in FIG. 3. FIG. 3 is a layout diagram, and FIG. 4 is a cross-sectional view taken along line IV- And FIG. 5 is an enlarged cross-sectional view of the portion I in which the identification number of the liquid crystal cell is described in FIG. 2.

First, a metal such as aluminum (Al) or an aluminum alloy, molybdenum (Mo) or molybdenum-tungsten (MoW) alloy, chromium (Cr), tantalum (Ta) Wiring is formed. The gate wiring includes a scanning signal line or a gate line 121 extending in the horizontal direction, a gate pad 125 connected to an end of the gate line 121 for receiving a scanning signal from the outside and transmitting the signal to the gate line 121, And a gate electrode 123 of the thin film transistor which is a part of the gate line 121.

On the other hand, in the identification number I, the first thin film 126 is formed in the same layer as the gate wirings 121, 123, and 125.

The gate wirings 121, 123, and 125 may be formed of a single layer, but may be formed of a double layer or a triple layer. In the case of forming at least two layers, it is preferable that one layer is made of a material having a low resistance and the other layer is made of a material having good contact properties with other materials, and a double layer of Cr / Al (or Al alloy) A double layer is an example.

A gate insulating film 140 made of silicon nitride (SiN _x ) or the like is formed on the gate wirings 121, 123, and 125 to cover the gate wirings 121, 123, and 125.

A semiconductor layer 150 made of a semiconductor such as hydrogenated amorphous silicon is formed on the gate insulating layer 140 and doped with a high concentration of n-type impurities such as phosphorus (P) An ohmic contact layer pattern or an intermediate layer pattern 163 or 165 made of amorphous silicon or the like is formed.

The second thin film 155 is formed on the gate insulating film 140 of the first thin film 126 in the identification number I of the same layer as the semiconductor layer 150.                     

On the contact layer patterns 163 and 165, data wiring made of a conductive material such as Mo or MoW alloy, Cr, Al or Al alloy, or Ta is formed. The data line includes a data line 171 formed in the vertical direction, a data pad 179 connected to one end of the data line 171 to receive an image signal from the outside and a data pad 179 connected to one end of the data line 171, 173 and 179 and is connected to the drain electrode of the thin film transistor located opposite to the source electrode 173 with respect to the gate electrode 123, And a storage capacitor conductor pattern 177 located above and overlapped with the gate line 121 and the storage capacitor 175. The storage capacitor conductor pattern 177 is connected to a pixel electrode 190 to be described later to form a storage capacitor. However, the storage capacitor conductor pattern 177 may not be formed if a sufficient holding capacity can be obtained by only overlapping the pixel electrode 190 and the gate line 121.

On the other hand, a third thin film 172 having an identification number patterned on the second thin film 155 is formed in the identification number I of the same layer as the data lines 171, 173, 175, and 179. The identification number of the third thin film 172 is represented by the color of the amorphous silicon layer constituting the second thin film 155 in the shape that the actual identification number formed by the opening is exposed through the opening, The first thin film 126 having opacity or reflectivity is formed on the first thin film 126 and the readability of the identification number can be sufficiently secured even if the identification number is formed small.

The data lines 171, 173, 175, 177 and 179 may be formed of a single layer as well as the gate lines 121, 123 and 125, but may be formed of a double layer or a triple layer. Of course, in the case of forming at least two layers, one layer is preferably formed of a material having a low resistance and the other layer is preferably made of a material having good contact properties with other materials.

The contact layer patterns 163 and 165 serve to lower the contact resistance between the semiconductor pattern 150 disposed therebelow and the data lines 171, 173, 175, 177, and 179 thereon.

The data line portions 171, 177 and 179 and the drain electrode 175 and the semiconductor pattern 150 are covered with the protective film 180. The protective film 180 is formed on the contact window 180 exposed to the drain electrode 175 and the data pad 179, (185, 189). The protective film 180 also has a contact window 182 that exposes the gate pad 125 together with the gate insulating film 140. The passivation layer 180 may be formed of an organic insulating material such as silicon nitride or acrylic and serves to cover and protect at least a portion of the semiconductor pattern 150 located between the source electrode 173 and the drain electrode 175 .

A pixel electrode 190 is formed on the gate insulating film 140 in the region surrounded by the gate line 121 and the data line 171. The pixel electrode 190 is physically and electrically connected to the drain electrode 175 through the contact window 185 to receive an image signal from the thin film transistor to generate an electric field together with the electrode of the top plate and is made of indium tin oxide (ITO) (indium zinc oxide). The pixel electrode 190 also extends over the storage capacitor conductor pattern 177 and is physically and electrically connected to the storage capacitor conductor pattern 177 and the gate line 121 below the storage capacitor conductor pattern 177, Respectively. An auxiliary gate pad 92 and an auxiliary data pad 97 are formed on the gate pad 125 and the data pad 179 through the contact windows 182 and 189. The auxiliary gate pad 92 and the auxiliary data pad 97 are connected to the pad 125 , 179) and the external circuit device, and protects the pad. It is not necessary to apply them.

Here, transparent ITO is used as an example of the material of the pixel electrode 190, but an opaque conductive material may be used in the case of a reflective liquid crystal display device.

In the manufacturing method of the thin film transistor array substrate according to the embodiment of the present invention, a conductive material for gate wiring is stacked on the insulating substrate for a liquid crystal display and patterned to be connected to the gate line 121 and the gate line 121 The gate wiring including the gate electrode 123 and the gate pad 125 connected to the gate line 121 and the first thin film 126 of the identification number I are formed in the thin film transistor of the thin film transistor, A semiconductor layer 150 and a second thin film 155 of the identification number I are formed on the gate insulating film 140 of the gate electrode 123 and then the conductive material for data wiring is laminated A source electrode 173 which is connected to the data line 171 and the data line 171 and is located above the semiconductor layer 150 and a drain electrode 173 which faces the source electrode 173 around the gate electrode 123, electrode The data line including the data pad 179 connected to one of the data line 175 and the data line 171 and the third thin film 172 of the identification number I. The source and drain electrodes 173 The pixel electrode 190, the auxiliary gate pad 92 and the auxiliary data pad 97 are formed on the protective layer 180 covering the semiconductor layer 150 exposed between the pixel electrodes 190 and 175.                     

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention as defined in the appended claims. It can be understood that it is possible. Accordingly, the invention is limited only by the claims.

As described above, in the substrate for a liquid crystal display of the present invention, the identification number of the identification number is formed in at least two layers so that the lower film having the color is patterned so that the readability can be sufficiently secured even if the identification number is small have.

Claims (5)

A plurality of gate lines and a plurality of data lines crossing each other for transmitting a scan signal or a video signal, each of the gate lines and the data lines intersecting with each other, and a plurality of pixel electrodes, each of which is electrically connected to the gate lines and the data lines, And a thin film transistor for controlling the video signal to be transmitted to the pixel electrode through a channel portion of the pixel portion, A data pad for receiving the video signal or the scan signal from the outside and transmitting the data signal and the gate signal to the data line and the gate line, respectively, and a pad unit to which the gate pad is connected and connected, / RTI > Wherein the identification number is formed of at least two thin films, One thin film is patterned to reveal a part of the other thin film A substrate for a liquid crystal display device. The method of claim 1, Wherein the identification number comprises the first to third thin films stacked one on top of the other. 3. The method of claim 2, Wherein the first to third thin films are formed on the same layer as the gate wiring, the semiconductor layer, and the data wiring, respectively. delete 4. The method of claim 3, And the third thin film is patterned to expose a part of the second thin film.

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