JPH0244721U - - Google Patents
Info
- Publication number
- JPH0244721U JPH0244721U JP12290588U JP12290588U JPH0244721U JP H0244721 U JPH0244721 U JP H0244721U JP 12290588 U JP12290588 U JP 12290588U JP 12290588 U JP12290588 U JP 12290588U JP H0244721 U JPH0244721 U JP H0244721U
- Authority
- JP
- Japan
- Prior art keywords
- tft
- tfts
- electrode
- gate
- matrix array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims 3
- 239000010408 film Substances 0.000 claims 2
- 238000002161 passivation Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
Landscapes
- Liquid Crystal (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Liquid Crystal Display Device Control (AREA)
- Thin Film Transistor (AREA)
Description
第１図ａ，ｂ，ｃは本考案の異なる実施例を示
す平面図、第２図はＴＦＴの断面図、を示す。第
３図は平面模式図である。
１…ゲート電極、２…ゲート絶縁膜、３…半導
体膜、４…ドレイン電極、５…ソース電極、６…
表示電極。
FIGS. 1a, b, and c are plan views showing different embodiments of the present invention, and FIG. 2 is a sectional view of the TFT. FIG. 3 is a schematic plan view. DESCRIPTION OF SYMBOLS 1... Gate electrode, 2... Gate insulating film, 3... Semiconductor film, 4... Drain electrode, 5... Source electrode, 6...
Display electrode.
Claims (1)
ンが交差し、その交点にＴＦＴ（薄膜トランジス
タ）をマトリツクス状に形成したＴＦＴマトリツ
クスアレイにおいて、前記ＴＦＴのゲート電極、
半導体膜、ゲート絶縁膜、ソース・ドレイン電極
、表示電極、パツシベーシヨン等の基本要素の形
状をＴＦＴの一定配列周期毎に異ならしめたこと
を特徴とするＴＦＴマトリクスアレイ。 In a TFT matrix array in which a plurality of gate lines and a plurality of drain lines intersect and TFTs (thin film transistors) are formed in a matrix at the intersections, the gate electrode of the TFT,
A TFT matrix array characterized in that the shapes of basic elements such as a semiconductor film, a gate insulating film, a source/drain electrode, a display electrode, and a passivation are made different for each fixed arrangement period of TFTs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12290588U JPH0244721U (en) | 1988-09-20 | 1988-09-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12290588U JPH0244721U (en) | 1988-09-20 | 1988-09-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0244721U true JPH0244721U (en) | 1990-03-28 |
Family
ID=31371275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12290588U Pending JPH0244721U (en) | 1988-09-20 | 1988-09-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0244721U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07104317A (en) * | 1993-09-30 | 1995-04-21 | Nec Corp | Liquid crystal display device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6127178B2 (en) * | 1982-10-06 | 1986-06-24 | Toshuki Mano |
-
1988
- 1988-09-20 JP JP12290588U patent/JPH0244721U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6127178B2 (en) * | 1982-10-06 | 1986-06-24 | Toshuki Mano |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07104317A (en) * | 1993-09-30 | 1995-04-21 | Nec Corp | Liquid crystal display device |
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