JPS63100854U - - Google Patents
Info
- Publication number
- JPS63100854U JPS63100854U JP12661786U JP12661786U JPS63100854U JP S63100854 U JPS63100854 U JP S63100854U JP 12661786 U JP12661786 U JP 12661786U JP 12661786 U JP12661786 U JP 12661786U JP S63100854 U JPS63100854 U JP S63100854U
- Authority
- JP
- Japan
- Prior art keywords
- slit
- electrode
- shape
- thin film
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
第１図ａ及びｂは本考案のＴＦＴを採用した液
晶表示装置の要部平面図及びその断面図、第２図
ａ及びｂは従来の液晶表示装置の要部平面図及び
その断面図、第３図は信号波形図である。
１，１０……ドレイン電極、２，２０……ソー
ス電極、３，３０……ゲート電極、４，４０……
アモルフアスシリコン膜、５……絶縁膜、３１…
…スリツト。
Figures 1a and b are a plan view and a sectional view of the main parts of a liquid crystal display device employing the TFT of the present invention, and Figures 2a and b are a plan view and a sectional view of the main parts of a conventional liquid crystal display device. Figure 3 is a signal waveform diagram. 1,10...Drain electrode, 2,20...Source electrode, 3,30...Gate electrode, 4,40...
Amorphous silicon film, 5... Insulating film, 31...
...Slit.
補正 昭６３．１．２９
図面の簡単な説明を次のように補正する。
明細書の第１０ページ第７行ないし第８行に、
「第１図ａ及びｂは本考案のＴＦＴを採用した液
晶表示装置の要部平面図及びその断面図、…」と
あるのを、「第１図は本考案のＴＦＴを採用した
液晶表示装置の要部平面図、…」と補正する。Amendment January 29, 1981 The brief description of the drawing is amended as follows. On page 10, line 7 or line 8 of the specification,
``Figures 1 a and b are plan views and cross-sectional views of essential parts of a liquid crystal display device that employs the TFT of the present invention...''. A plan view of the main parts of...'' is corrected.
Claims (1)
並びにソース電極が順次積層された薄膜トランジ
スタに於いて、ゲート電極の一部にスリツトを設
け、該スリツトの形状より一定巾拡大した形状の
ソース電極を形成してなる薄膜トランジスタ。 In a thin film transistor in which a gate electrode, an insulating film, a semiconductor film, a drain electrode, and a source electrode are sequentially stacked, a slit is provided in a part of the gate electrode, and a source electrode is formed in a shape that is expanded by a certain width than the shape of the slit. thin film transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12661786U JPS63100854U (en) | 1986-08-20 | 1986-08-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12661786U JPS63100854U (en) | 1986-08-20 | 1986-08-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63100854U true JPS63100854U (en) | 1988-06-30 |
Family
ID=31020595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12661786U Pending JPS63100854U (en) | 1986-08-20 | 1986-08-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63100854U (en) |
-
1986
- 1986-08-20 JP JP12661786U patent/JPS63100854U/ja active Pending