JPH01140124A - Optical device - Google Patents
Optical deviceInfo
- Publication number
- JPH01140124A JPH01140124A JP62297553A JP29755387A JPH01140124A JP H01140124 A JPH01140124 A JP H01140124A JP 62297553 A JP62297553 A JP 62297553A JP 29755387 A JP29755387 A JP 29755387A JP H01140124 A JPH01140124 A JP H01140124A
- Authority
- JP
- Japan
- Prior art keywords
- mode
- diffraction grating
- optical waveguide
- vapor
- relief type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 27
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 10
- 230000000737 periodic effect Effects 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000005342 ion exchange Methods 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 3
- 239000004988 Nematic liquid crystal Substances 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract description 2
- 238000001312 dry etching Methods 0.000 abstract description 2
- 125000006850 spacer group Chemical group 0.000 abstract description 2
- 230000009466 transformation Effects 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005253 cladding Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021532 Calcite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1326—Liquid crystal optical waveguides or liquid crystal cells specially adapted for gating or modulating between optical waveguides
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光学装置に係り、特に波長選択と、TE−T
Mモモ−選択を同時に行なうことを特徴とする光学装置
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical device, and particularly to wavelength selection and TE-T
The present invention relates to an optical device characterized in that M-move selection is performed simultaneously.
従来、イオン交換ガラス導波路上に、方解石を装荷する
ことにより、TEモードと7Mモードを選択する例が、
アプライド・オプテイクス、13巻(1,974年)第
1753頁から第1754頁(^ppHed Opむ
ics voJ、 1 3 (1974) p
p1753−ρρ1754)において論じられている6
〔発明が解決しようとする問題点〕
上記従来技術は、異方性光学結晶の光学軸と、光導波路
方向の相対位置により、TE−TMモード選択性が決ま
り、T E −T Mモード選択性を、任意に切り換え
ることができなかった。さらに、波長選択性を有する素
子との組合せは1作製が困難であった。Conventionally, an example of selecting between TE mode and 7M mode by loading calcite on an ion-exchange glass waveguide is as follows.
Applied Optics, Vol. 13 (1,974), pp. 1753-1754 (^ppHed Optics voJ, 13 (1974) p.
p1753-ρρ1754)6
[Problems to be Solved by the Invention] In the above prior art, the TE-TM mode selectivity is determined by the relative position between the optical axis of the anisotropic optical crystal and the optical waveguide direction, and the TE-TM mode selectivity is could not be switched arbitrarily. Furthermore, it was difficult to manufacture a combination with an element having wavelength selectivity.
本発明は、上記従来技術の有する問題点を解決し、波長
選択性を有し、さらにTE−7Mモードを任意に選択で
きる光学装置を提供することにある。An object of the present invention is to solve the problems of the above-mentioned prior art and provide an optical device that has wavelength selectivity and can arbitrarily select the TE-7M mode.
上記目的は、光導波路表面に周期的構成部分を設け、そ
の表面に液晶等の異方性光学効果を示す物質を形成する
ことにより、達成される。The above object is achieved by providing a periodic component on the surface of the optical waveguide and forming a material exhibiting an anisotropic optical effect, such as liquid crystal, on the surface.
光導波路表面に、サブミクロンオーダの周期を有する例
えばレリーフ型回折格子を作製し、その上に液晶を塗布
することにより、液晶が第2図(a)のように配向する
。さらにこの液晶をガラスではさんで、電界を印加する
と、第3図(b)のように配向性が変化する。液晶は、
第4図に示すような光学的異方性を有するe nep
nOは、それぞれの方向に対する屈折率であり、ne>
noである。そこで、先導波路の屈折率nx@no<n
s(n eとすることにより、電界を印加した場合TE
モードを選択的に導波し、7Mモードは液晶中に導波し
て散乱する。逆に、電界を印加しない場合は、7Mモー
ドを選択的に導波し、TEモードは液晶中に導波して散
乱する。For example, a relief-type diffraction grating having a period on the order of submicrons is fabricated on the surface of the optical waveguide, and by applying liquid crystal thereon, the liquid crystal is oriented as shown in FIG. 2(a). Furthermore, when this liquid crystal is sandwiched between glasses and an electric field is applied, the orientation changes as shown in FIG. 3(b). The liquid crystal is
e nep with optical anisotropy as shown in Figure 4.
nO is the refractive index for each direction, ne>
No. Therefore, the refractive index of the leading waveguide nx@no<n
By setting s(ne e, when an electric field is applied, TE
Modes are selectively guided, and the 7M mode is guided into the liquid crystal and scattered. Conversely, when no electric field is applied, the 7M mode is selectively guided, and the TE mode is guided and scattered in the liquid crystal.
このようにして、波長選択性を有し、さらにTE−7M
モードを任意に選択することができる光導波路を作製す
ることができる。In this way, it has wavelength selectivity and furthermore the TE-7M
It is possible to fabricate an optical waveguide whose mode can be arbitrarily selected.
以下、本発明の第1の実施例を第1図により説明する。 A first embodiment of the present invention will be described below with reference to FIG.
裏面をAQ無蒸着たガラス基板3(波長633Nmの光
に対する屈折率1.512)の表面に、イオン交換法に
より、光導波路1(屈折率1.526)を形成する。次
に、表面にホトレジストを塗布し、ベーク後、干渉露光
法により、レジストの回折格子パターンを形成する。こ
れをマスクにして、ドライエツチングにより、先導波路
表面に、周期が0.2μmで深さが0.1μmのレリー
フ型回折格子を形成する。次に、3〜5μmのスペーサ
を設けて、レリーフ型回折格子表面に、ネマティック液
晶2(nII=1.629.no=1.501)を流し
込んだ後、表面をAQ無蒸着たガラス板5ではさみこん
だ、これにより、〜0.6μmの波長の光を選択的に透
過し、さらにTE−7Mモードを任意に切り変えること
ができる光導波路を作製することができた0選択波長は
1回折格子の周期を変えることにより、任意に選ぶこと
ができる0次に1本発明の第2の実施例を第2図により
説明する。第2の実施例では、ガラス基板3の一部に段
差を設け、その部分に、半導体レーザをハイブリッドに
はめこんだ点が、第1の実施例と異なる。半導体レーザ
は、下部クラッド層11上に、活性M9.上部クラッド
層10を積層した後、p(IIIffi極12およびN
側電極13を上下に設けたファブリペロ−タイプのレー
ザである。An optical waveguide 1 (refractive index 1.526) is formed by an ion exchange method on the surface of a glass substrate 3 (refractive index 1.512 for light with a wavelength of 633 Nm) whose back surface is not deposited with AQ. Next, a photoresist is applied to the surface, and after baking, a diffraction grating pattern of the resist is formed by interference exposure method. Using this as a mask, a relief type diffraction grating having a period of 0.2 μm and a depth of 0.1 μm is formed on the surface of the leading waveguide by dry etching. Next, after providing a spacer of 3 to 5 μm and pouring nematic liquid crystal 2 (nII=1.629.no=1.501) onto the surface of the relief type diffraction grating, the surface was covered with a glass plate 5 without AQ deposition. As a result, we were able to create an optical waveguide that selectively transmits light with a wavelength of ~0.6 μm and can also arbitrarily switch the TE-7M mode.The selected wavelength is 1 diffraction. A second embodiment of the present invention will be described with reference to FIG. 2, which allows arbitrary selection of the zeroth order by changing the period of the grating. The second embodiment differs from the first embodiment in that a step is provided in a part of the glass substrate 3, and a semiconductor laser is fitted into the step in a hybrid manner. The semiconductor laser has an active M9. After laminating the upper cladding layer 10, p(IIIffi pole 12 and N
This is a Fabry-Perot type laser in which side electrodes 13 are provided at the top and bottom.
半導体レーザからの光は、導波路を通過することにより
、回折格子の周期で決まる特定の波長が選択され、さら
に、導波路部分に電界を印加することにより、TEモー
ドが、印加しないことにより、7Mモードが選択されて
、導波路右側から出力される。このようにして、TE−
7Mモードを任意に選択でき、さらに波長純度のすぐれ
た。ハイブリッド型半導体レーザを得ることができた。By passing the light from the semiconductor laser through the waveguide, a specific wavelength determined by the period of the diffraction grating is selected. Furthermore, by applying an electric field to the waveguide section, the TE mode is set. 7M mode is selected and output from the right side of the waveguide. In this way, TE-
The 7M mode can be selected arbitrarily, and the wavelength purity is excellent. We were able to obtain a hybrid semiconductor laser.
次に1本発明の第3の実施例を第5図により説明する。Next, a third embodiment of the present invention will be explained with reference to FIG.
第3の実施例では、ガラス板5(屈折率1.512)の
下層に、上部導波路(屈折率1.650)を設けた点が
、第1の実施例と異なる。これにより、7Mモードの光
を、光導波路1の左端から入射すると、電界をかけない
場合、光は光導波路1の右端から出射し、電界をかけた
場合、上部光尊波路14の右端から出射する。このよう
に、電界の有無により光の出射位置を基板の深さ方向に
変化させることができる光スィッチを作製することがで
きた。The third example differs from the first example in that an upper waveguide (refractive index 1.650) is provided below the glass plate 5 (refractive index 1.512). As a result, when 7M mode light enters from the left end of the optical waveguide 1, the light will be emitted from the right end of the optical waveguide 1 if no electric field is applied, and will be emitted from the right end of the upper optical waveguide 14 if an electric field is applied. . In this way, it was possible to produce an optical switch that can change the light emission position in the depth direction of the substrate depending on the presence or absence of an electric field.
本発明によれば、波長選択性を有し、さらに。 According to the present invention, the present invention has wavelength selectivity;
T E−’r Mモードを任意に切り換えることができ
る先導波路を容易に作製することができる。A leading waveguide capable of arbitrarily switching the T E-'r M mode can be easily produced.
第1図は、本発明の第1の実施例を示す図、第2図は本
発明の第2の実施例を示す図、第3図及び第4図は、本
発明の詳細な説明図、第5図は。
本発明の第3の実施例を示す図である。
1・・・光導波路、2・・・液晶、3・・・ガラス基板
、4・・・下部電極、5・・・ガラス板、6・・・上部
電極、7・・・電源、8・・・スイッチ、9・・・活性
層、1o・・・上部クラッド層、11・・・下部クラッ
ド層、12・・・I)側@極、】3・・・p側電極、1
4・・・上部導波路。FIG. 1 is a diagram showing a first embodiment of the invention, FIG. 2 is a diagram showing a second embodiment of the invention, FIGS. 3 and 4 are detailed explanatory diagrams of the invention, Figure 5 is. It is a figure which shows the 3rd Example of this invention. DESCRIPTION OF SYMBOLS 1... Optical waveguide, 2... Liquid crystal, 3... Glass substrate, 4... Lower electrode, 5... Glass plate, 6... Upper electrode, 7... Power supply, 8...・Switch, 9... Active layer, 1o... Upper cladding layer, 11... Lower cladding layer, 12... I) side @ pole, ]3... P-side electrode, 1
4... Upper waveguide.
Claims (1)
する第1の部分と、この第1の部分に接して形成されか
つ異方性光学効果を有する第2の部分とを有することを
特徴とする光学装置。 2、特許請求の範囲第1項に記載の光学装置において、
前記第2の部分は液晶により形成されることを特徴とす
る光学装置。[Claims] 1. A waveguide region for guiding light is formed in a first portion having periodic irregularities and in contact with the first portion, and has an anisotropic optical effect. an optical device comprising: a second portion; 2. In the optical device according to claim 1,
An optical device characterized in that the second portion is formed of liquid crystal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62297553A JP2650931B2 (en) | 1987-11-27 | 1987-11-27 | Optical device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62297553A JP2650931B2 (en) | 1987-11-27 | 1987-11-27 | Optical device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01140124A true JPH01140124A (en) | 1989-06-01 |
JP2650931B2 JP2650931B2 (en) | 1997-09-10 |
Family
ID=17848037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62297553A Expired - Lifetime JP2650931B2 (en) | 1987-11-27 | 1987-11-27 | Optical device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2650931B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0387354A1 (en) * | 1988-08-05 | 1990-09-19 | Matsushita Electric Industrial Co., Ltd. | Light deflecting element |
JP2000188418A (en) * | 1998-10-13 | 2000-07-04 | Sony Corp | Optoelectronic integrated circuit device |
FR2826133A1 (en) * | 2001-06-15 | 2002-12-20 | Nemoptic | Liquid crystal optical switch include two liquid crystal regions with electrodes controlling two polarisation components of signal |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56164305A (en) * | 1980-05-22 | 1981-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Optical fiber dispersively delayed equalizer and its production |
JPS5952219A (en) * | 1982-09-20 | 1984-03-26 | Nippon Telegr & Teleph Corp <Ntt> | Electrode for liquid crystal optical element |
JPS59109026A (en) * | 1982-12-14 | 1984-06-23 | Seiko Instr & Electronics Ltd | Light modulator |
JPS59126336A (en) * | 1983-01-06 | 1984-07-20 | Tokyo Inst Of Technol | Optical delay equalizer |
-
1987
- 1987-11-27 JP JP62297553A patent/JP2650931B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56164305A (en) * | 1980-05-22 | 1981-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Optical fiber dispersively delayed equalizer and its production |
JPS5952219A (en) * | 1982-09-20 | 1984-03-26 | Nippon Telegr & Teleph Corp <Ntt> | Electrode for liquid crystal optical element |
JPS59109026A (en) * | 1982-12-14 | 1984-06-23 | Seiko Instr & Electronics Ltd | Light modulator |
JPS59126336A (en) * | 1983-01-06 | 1984-07-20 | Tokyo Inst Of Technol | Optical delay equalizer |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0387354A1 (en) * | 1988-08-05 | 1990-09-19 | Matsushita Electric Industrial Co., Ltd. | Light deflecting element |
EP0387354A4 (en) * | 1988-08-05 | 1991-04-03 | Matsushita Electric Industrial Co., Ltd. | Light deflecting element |
US5193130A (en) * | 1988-08-05 | 1993-03-09 | Matsushita Electric Industrial Co., Ltd. | Light deflecting device |
JP2000188418A (en) * | 1998-10-13 | 2000-07-04 | Sony Corp | Optoelectronic integrated circuit device |
JP4529194B2 (en) * | 1998-10-13 | 2010-08-25 | ソニー株式会社 | Optoelectronic integrated circuit device |
FR2826133A1 (en) * | 2001-06-15 | 2002-12-20 | Nemoptic | Liquid crystal optical switch include two liquid crystal regions with electrodes controlling two polarisation components of signal |
WO2002103443A1 (en) * | 2001-06-15 | 2002-12-27 | Nemoptic | Liquid crystal-based electrooptical device forming, in particular, a switch |
US6959124B2 (en) | 2001-06-15 | 2005-10-25 | Nemoptic | Liquid crystal-based electro-optical device forming, in particular, a switch |
Also Published As
Publication number | Publication date |
---|---|
JP2650931B2 (en) | 1997-09-10 |
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