JP2000188418A - Optoelectronic integrated circuit device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a small-sized, highly integrated, and high-speed optoelectronic integrated circuit device. SOLUTION: On a silicon substrate 1, a plurality of circuit blocks A1, A2,..., B1, B2,... are formed in a monolithic way to constitute this device. In the plurality of circuit blocks, the signal transmissions between at least two circuit blocks are performed by lights. The circuit blocks wherebetween the signal transmission are performed by lights have light emitting elements and/or light receiving elements. The internal signal transmissions in each circuit block are performed through such wirings as Al and Cu. The region between the adjacent circuit blocks to each other is formed out of vacuum, air, or optically transparent substances. In the region between the circuit blocks, optical switches may be formed allowably. The circuit blocks may be connected allowably by a linear optical transmission line formed on the silicon substrate 1 in a monolithic way, and in the course of this optical transmission line or between it and the circuit block, optical switches may be formed allowably.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optoelectronic integrated circuit device, and more particularly to a device suitable for high-speed signal processing.

[0002]

2. Description of the Related Art Conventionally, aluminum (Al) wiring is used exclusively for wiring in a semiconductor integrated circuit device, and recently, copper (Cu) wiring having lower resistance has begun to be used. However, these metal wirings have reached a limit in increasing the speed and integration of semiconductor integrated circuit devices in the future, and new wiring techniques are required. One of the promising means for that is an optical wiring technique for exchanging signals by light.

Heretofore, as an apparatus using such an optical wiring, an apparatus in which a modularized optical component (including a light emitting element or a light receiving element) is mounted on a substrate is most commonly used.

[0004]

However, the conventional device using optical wiring has a problem that it is difficult to reduce the size of a modularized optical component, and thus it is difficult to reduce the size and increase the degree of integration. Was.

Accordingly, an object of the present invention is to reduce the size,
An object is to provide an optoelectronic integrated circuit device capable of high integration and high speed.

[0006]

In order to achieve the above object, an optoelectronic integrated circuit device according to a first aspect of the present invention has a plurality of circuit blocks formed monolithically on a substrate. Signal transmission between at least two circuit blocks is performed by light, and signal transmission inside each circuit block of the plurality of circuit blocks is performed through wiring made of a conductor. is there.

In the optoelectronic integrated circuit device according to a second aspect of the present invention, a plurality of circuit blocks are monolithically formed on a substrate, and signals are transmitted between at least two of the plurality of circuit blocks by light. An opto-electronic integrated circuit device in which the transmission of signals inside each circuit block of the plurality of circuit blocks is performed through a wiring made of a conductor, wherein at least two circuit blocks are monolithically mounted on a substrate. It is characterized by having an optical switch formed.

In the optoelectronic integrated circuit device according to a third aspect of the present invention, a plurality of circuit blocks are monolithically formed on a substrate, and signals are transmitted between at least two of the plurality of circuit blocks by light. An opto-electronic integrated circuit device in which signal transmission within each circuit block of the plurality of circuit blocks is performed through a wiring made of a conductor, wherein at least two circuit blocks are monolithically mounted on a substrate. Characterized by having an optical switch monolithically formed on a substrate in the middle of the optical transmission line, the optical switch being formed by a linear optical transmission line for transmitting a signal by light. It is.

In an optoelectronic integrated circuit device according to a fourth aspect of the present invention, a plurality of circuit blocks are monolithically formed on a substrate, and signal transmission between at least two of the plurality of circuit blocks is performed by light. An opto-electronic integrated circuit device in which signal transmission within each circuit block of the plurality of circuit blocks is performed through a wiring made of a conductor, wherein at least two circuit blocks are monolithically mounted on a substrate. Formed, connected by a linear optical transmission path for performing signal transmission by light, between at least one circuit block of at least two circuit blocks and the optical transmission path, on the substrate The optical switch has a monolithically formed optical switch.

In the present invention, at least two circuit blocks for transmitting signals mutually by light have a light emitting element and / or a light receiving element. The area between the at least two circuit blocks is, if appropriate, made of vacuum, air or an optically transparent material, typically a dielectric. The signal transmission by light between the at least two circuit blocks may be performed by a single signal or by a multiplexed signal of a bus type, and further by a holographic signal (holographic signal). You may. When a bus type multiplexed signal or a holographic signal is used, more signals can be transmitted.

In the present invention, each of the plurality of circuit blocks typically includes at least one electronic element, for example, a transistor. As the electronic element, an element using an elemental semiconductor such as silicon or an element using a compound semiconductor such as GaAs can be used, and these electronic elements may be mixed.
In addition, Al, Cu, or the like can be used as a conductor that is a material of a signal transmission wiring inside each circuit block.

In the present invention, the substrate on which a plurality of circuit blocks are formed monolithically includes a compound semiconductor substrate such as a silicon substrate and a GaAs substrate, as well as an SOI substrate.
(Silicon on Insulator) A substrate, an insulating substrate, or the like can be used.

In some cases, in addition to a plurality of circuit blocks formed monolithically on the substrate, one or more modularized components may be mounted on the substrate.

In the second, third and fourth aspects of the present invention, basically any optical switch can be used as long as it can be monolithically formed on a substrate. Often, one having a switching speed according to the application is selected. As this optical switch,
Specifically, for example, an optical switch using an electric field effect such as an optical switch using a liquid crystal or an electro-optic crystal (for example, Optics Vol. 21 No. 8 (August 1992), p. 510), semiconductor light Switch (for example, Optics Vol. 21 No. 8 (19
August 1992) p. 527), an optical switch using an organic thin film (a derivative having a special molecular structure in a squarylium (SQ) dye) (for example, Nikkan Kogyo Shimbun, 19
July 13, 1998) can be used.

In the third and fourth aspects of the present invention, the optical transmission line is made of a material having a small optical signal propagation loss. Specifically, for example, an organic resin resist or the like is used. Or an inorganic material such as silicon oxide or silicon nitride. This optical transmission line is typically formed with a lower portion buried inside a groove formed on the surface of the substrate. The cross-sectional shape of the optical transmission line is preferably substantially circular from the viewpoint of efficient optical signal transmission, but may be another shape, for example, an ellipse or a rectangle.

According to the first aspect of the present invention configured as described above,
In the second, third and fourth inventions, the signal transmission between at least two circuit blocks is performed by light, which is different from the case where the signal transmission between circuit blocks is performed by an electric signal through metal wiring. In addition, signal delay or signal loss due to parasitic capacitance or resistance can be eliminated. In addition, since signal transmission between at least two circuit blocks is performed by light, high-speed signal processing and high-density information can be achieved. In addition, these circuit blocks are monolithically formed on the substrate by film forming technology, etching technology, impurity doping technology, etc., so that the device is compared to the case where modularized optical components are mounted on the substrate. Can be reduced in size and highly integrated. Further, wiring used for transmitting signals inside each circuit block can be easily formed by a conventional established wiring technique.

According to the second, third and fourth aspects of the present invention, an optical switch is provided between circuit blocks, in an optical transmission line connected between circuit blocks, or between a circuit block and an optical transmission line. By using this optical switch, it is possible to easily select an optical signal transmitted between circuit blocks by using this optical switch, and increase the density of information. Moreover, since the optical switch is formed monolithically on the substrate, the size and the degree of integration of the device can be reduced as compared with the case where the modularized optical switch is mounted on the substrate.

According to the third and fourth aspects of the present invention, a linear optical transmission line for transmitting a signal between at least two circuit blocks by light is monolithically formed on a substrate together with the circuit blocks. By being formed, the transmission of the optical signal between the circuit blocks through this optical transmission path can be performed reliably and with high reliability, and the size and integration of the device can be reduced.

[0019]

Embodiments of the present invention will be described below with reference to the drawings. In all the drawings of the embodiments, the same or corresponding portions are denoted by the same reference numerals.

FIG. 1 shows an optoelectronic integrated circuit device according to a first embodiment of the present invention.

As shown in FIG. 1, the light in the electronic integrated circuit device according to the first embodiment, a plurality of circuits on the silicon substrate 1 block A _1, A _2, · · ·, B _1,
B _2, · · · are formed monolithically using film forming technique, an etching technique, the process technology, such as impurity doping technique. These circuit blocks A ₁ , A ₂ ,
.., B ₁ , B ₂ ,... And the function of each circuit block are determined according to what kind of function the optoelectronic integrated circuit device has. For example, when the optoelectronic integrated circuit device is provided with a function of performing a specific signal processing, circuits necessary for the signal processing include these circuit blocks A ₁ , A ₂ ,..., B ₁ , B ₂ , ...
・ It will be composed of part or all of In each circuit block, electronic elements such as transistors are connected by metal wiring (not shown) made of Al, Cu, or the like according to required functions. On the other hand, transmission of signals between circuit blocks adjacent to each other is performed by light. Specifically, each circuit block has a light receiving element and / or a light emitting element in addition to an electronic element such as a transistor, and can receive an optical signal from an adjacent circuit block, or Either an optical signal can be transmitted, or both are enabled. In this case, the optical signal received by the light receiving element is subjected to predetermined processing in a circuit block provided with the light receiving element. Further, the light emitting element is driven by an output obtained as a result of signal processing in a circuit block provided with the light emitting element, and generates an optical signal. The optical signal transmitted between the circuit blocks may be a single signal, a bus-type multiplex signal, a holographic signal, or a mixture thereof.

The scale of integration of elements in each circuit block is selected according to the required function. For example, the scale may be similar to that of a standard cell or a macro cell in a custom IC or the like.

Next, a specific example of the structure of the light emitting / receiving section of each circuit block will be described. Here, the circuit blocks A ₁ and B ₁ shown in FIG. 1 will be described, but the same applies to other circuit blocks.

FIG. 2 shows a first example of the light receiving / emitting section. As shown in FIG. 2, in the first example, light-emitting and / or light-emitting elements having light-emitting elements and / or light-receiving elements on mutually opposing end faces of the circuit blocks A ₁ and B ₁ that are substantially perpendicular to the substrate surface are provided. Sections a ₁ and b ₁ are provided. here,
As the light emitting element, for example, a GaP light emitting diode or the like is used, and as the light receiving element, for example, a GaAs photodiode or the like is used. These light receiving / emitting sections a
_An optical signal is exchanged between ₁ and b _{1 in} a direction parallel to the substrate surface.

FIG. 3 shows a second example of the light receiving / emitting section. As shown in FIG. 3, in the second example, the mutually facing end faces of the circuit blocks A ₁ and B ₁ adjacent to each other are inclined, for example, by 45 ° with respect to the substrate surface. Light emitting / receiving sections a ₁ and b ₁ each having an element and / or a light receiving element are provided. As these light emitting elements and light receiving elements, those similar to the first example can be used. In this case, an optical signal generated from the light emitting / receiving element of one of the circuit blocks A ₁ and B ₁ in the direction of 45 ° with respect to the substrate surface is reflected by the reflecting mirror 2 disposed in parallel with the substrate surface. And is incident on the light receiving element of the light emitting / receiving section of the other circuit block from the direction of 45 ° with respect to the substrate surface and is received.

FIG. 4 shows a third example of the light receiving / emitting section. As shown in FIG. 4, in the third example, the light receiving and emitting devices having the light emitting element and / or the light receiving element on the end faces of the circuit blocks A ₁ and B ₁ adjacent to each other which are substantially perpendicular to the substrate surface are opposed to each other. Sections a ₁ and b ₁ are provided. As the light emitting element and the light receiving element, those similar to those in the first example can be used, but a surface emitting type light emitting element is used. In this case, an optical signal is emitted in a direction perpendicular to the substrate surface from the light emitting element of the light emitting / receiving section of _one of the circuit blocks A ₁ and B ₁ , and the optical signal is transmitted at 45 ° to the substrate surface. The light is reflected by the reflecting mirrors 3 and 4 arranged obliquely in the direction of, and is incident on the light receiving element of the other circuit block from above and perpendicular to the substrate surface and is received.

The method of manufacturing the optoelectronic integrated circuit device according to the first embodiment will be described with reference to FIGS.
Here, FIGS. 5 and 6 are cross-sectional views taken along line XX of FIG. First, as shown in FIG. 5, a circuit block layer 5 is formed on a silicon substrate 1 by a film forming technique, an etching technique, an impurity doping technique, etc. according to a normal LSI manufacturing process. Next, as shown in FIG. 6, the circuit block layer 5 is selectively etched away by, for example, an anisotropic etching technique to form circuit blocks A ₁ ,... B ₁ ,. Next, in each circuit block, for example, the light emitting / receiving portions a ₁ and b ₁ as shown in FIG. 2, 3 or 4 are formed by using a compound semiconductor epitaxial growth technique or the like. Thus, the intended optoelectronic integrated circuit device is manufactured.

As described above, according to the first embodiment, the circuit blocks A ₁ , A ₂ ,..., B ₁ , B ₂ ,.
.. Transmission of signals by light, signal delay or signal loss due to parasitic capacitance or resistance can be eliminated. Further, the speed of signal processing and the density of information can be increased. Moreover, these circuit blocks A
_{1, A 2, ···, B} 1, B 2, ··· by that it is formed monolithically on the silicon substrate 1, the case of mounting a conventional modular optical components as the substrate As compared with the above, the size and integration of the device can be reduced. Further, metal wiring made of Al, Cu, or the like for transmitting a signal inside each circuit block can be easily formed by a conventionally established wiring technique. As described above, a compact, highly integrated and high-speed optoelectronic integrated circuit device can be realized.

Next, an optoelectronic integrated circuit device according to a second embodiment of the present invention will be described. FIG. 7 shows this optoelectronic integrated circuit device.

As shown in FIG. 7, the light in an electronic integrated circuit device according to the second embodiment, a plurality of circuits on the silicon substrate 1 block A _1, A _2, · · ·, B _1,
B _2, · · · are formed monolithically, further, so as to fill the portion between these circuit blocks, optically transparent film 6 is formed. In this case, transmission of signals between circuit blocks adjacent to each other is performed by light through the optically transparent film 6. As the optically transparent film 6, a film made of a substance having a small optical signal transmission loss with respect to an optical signal to be used is preferably used. Specifically, a resist made of an organic resin or a heat-resistant insulating material is used. A body such as SiO ₂ is used. Other points are the same as those of the first embodiment, and the description is omitted.

In order to manufacture the optoelectronic integrated circuit device according to the second embodiment, the process is advanced in the same manner as shown in FIGS. 5 and 6, and then, as shown in FIG. A new film 6 is formed. More specifically, the formation of the optically transparent film 6 is performed by applying a resist to the entire surface of the substrate when a resist made of an organic resin is used as the material. The method uses this optically transparent film 6.
This is effective when only a heat treatment at about 200 ° C. or less is performed as a step after the film formation. When SiO ₂ is used as the material of the optically transparent film 6, the optically transparent film 6 can be formed by a liquid phase CVD method utilizing a sol-gel reaction. This liquid phase CVD
In film formation by the law, by performing the growth the growth temperature, for example, set to 0 ° C., SiO ₂ showing high fluidity
The film is grown and then subjected to a heat treatment at a low temperature, for example, at 400 ° C. for about 15 minutes, so that the OH contained in the SiO ₂ film is removed.
The groups are removed and the SiO ₂ film is solidified. Since SiO ₂ is a heat-resistant insulator, the process temperature after the formation of the optically transparent film 6 can be allowed up to about 1000 ° C.

According to the second embodiment, the same advantages as in the first embodiment can be obtained.

Next, an optoelectronic integrated circuit device according to a third embodiment of the present invention will be described. FIG. 9 shows the optoelectronic integrated circuit device, and FIG. 10 is an enlarged sectional view of a portion between circuit blocks adjacent to each other in the optoelectronic integrated circuit device.

As shown in FIG. 9 and FIG.
In the optoelectronic integrated circuit device according to the embodiment, a plurality of circuit blocks A ₁ , A ₂ ,.
, B ₁ , B ₂ ,... Are monolithically formed, and an optical switch 7 is provided between these circuit blocks.
Are similarly monolithically formed. Various switches can be used as the optical switch 7 depending on the application. For example, an optical switch using an electric field effect such as an optical switch using liquid crystal can be used. The liquid crystal for the optical switch can be formed by, for example, a coating technique and etching. In this case, a control electrode (not shown) for applying an electric field to the liquid crystal includes one of the light emitting element of the light emitting / receiving section of one circuit block and the light receiving element of the light emitting / receiving section of the other circuit block opposed thereto. It may be provided above and below the optical switch 7 for each set, or may be provided in common for a plurality of sets. The control electrode can be formed of, for example, a metal film such as an impurity-doped polycrystalline silicon film or an Al film, and is formed on the liquid crystal via a protective film as necessary. In this case, transmission of an optical signal between circuit blocks adjacent to each other is controlled by turning on / off the optical switch 7. Other points are the same as those of the first embodiment, and the description is omitted.

In order to manufacture the optoelectronic integrated circuit device according to the third embodiment, the process is advanced in the same manner as shown in FIGS. 5 and 6, and then, as shown in FIG. The switch 7 is formed. Specifically, for example,
An optical switch 7 is formed by forming a liquid crystal and a control electrode in a portion between circuit blocks.

According to the third embodiment, the same advantages as those of the first embodiment can be obtained. In addition, since the optical switch 7 is provided between the circuit blocks, the optical switch 7 can be used. Therefore, it is possible to easily select an optical signal transmitted between circuit blocks, and to obtain an advantage that information density can be increased.

Next, an optoelectronic integrated circuit device according to a fourth embodiment of the present invention will be described. FIG. 12 shows the optoelectronic integrated circuit device, and FIG. 13 is an enlarged cross-sectional view of a portion between circuit blocks adjacent to each other in the optoelectronic integrated circuit device.

As shown in FIGS. 12 and 13, in the optoelectronic integrated circuit device according to the fourth embodiment, a plurality of circuit blocks A ₁ , A ₂ ,.
, B ₁ , B ₂ ,... Are monolithically formed, and an optical switch 7 is provided between these circuit blocks.
Are similarly monolithically formed. Then, a passivation film 8 such as a SiO ₂ film or a SiN film is formed so as to cover these circuit blocks and the optical switch 7. Various switches can be used as the optical switch 7 depending on the application. For example, an optical switch using an electric field effect such as an optical switch using liquid crystal can be used. In this case, the control electrode (not shown) is provided with an optical switch 7 for each pair of the light emitting element of the light emitting / receiving section of one circuit block and the light receiving element of the light emitting / receiving section of the other circuit block. May be provided above and below, or may be provided in common for, a plurality of sets. In this case, transmission of an optical signal between circuit blocks adjacent to each other is as follows.
Control is performed by turning on / off the optical switch 7. Other points are the same as those of the first embodiment, and the description is omitted.

In order to manufacture the optoelectronic integrated circuit device according to the fourth embodiment, the steps are advanced in the same manner as shown in FIGS. 5 and 6, and then, as shown in FIG. A switch 7 is formed, and a passivation film 8 is further formed on the entire surface of the substrate by, for example, a CVD method.

According to the fourth embodiment, the same advantages as in the third embodiment can be obtained.

Next, an optoelectronic integrated circuit device according to a fifth embodiment of the present invention will be described.

As shown in FIG. 15, in the optoelectronic integrated circuit device according to the fifth embodiment, the optical switch 7
Are formed over the circuit blocks on both sides thereof. Others are the same as the third embodiment,
Description is omitted.

According to the fifth embodiment, advantages similar to those of the third embodiment can be obtained.

Next, an optoelectronic integrated circuit device according to a sixth embodiment of the present invention will be described.

As shown in FIG. 16, in the optoelectronic integrated circuit device according to the sixth embodiment, the optical switch 7
Are formed over the circuit blocks on both sides thereof. Others are the same as the fourth embodiment,
Description is omitted.

According to the sixth embodiment, advantages similar to those of the fourth embodiment can be obtained.

In the optoelectronic integrated circuit devices according to the above-described first to sixth embodiments, the optical switch 7 is formed in a region between circuit blocks adjacent to each other. In some cases, the optical signal is transmitted to another circuit block through an optical transmission line, and the transmission of the optical signal is controlled by an optical switch. Therefore, next, an optoelectronic integrated circuit device according to a seventh embodiment of the present invention using such an optical transmission line will be described.

As shown in FIG. 17, in the opto-electronic integrated circuit device according to the seventh embodiment, the light receiving / emitting section of the circuit block, for example, the light receiving / emitting section a ₁ of the circuit block A ₁ is illuminated via the optical switch 7. One end of the transmission line 9 is connected. This optical transmission line 9 is formed monolithically on the silicon substrate 1. The other end of the optical transmission line 9 is connected to a light emitting / receiving section of another circuit block. This optical transmission line 9
Is formed of a transparent material having a small optical signal propagation loss, for example, an organic resin resist or SiO ₂ . The optical transmission line 9 is specifically formed, for example, as shown in FIG. An optical signal emitted from the light emitting element of the light receiving / emitting section of the circuit block enters one end face of the optical transmission line 9, propagates through the inside, and is emitted from the other end face, and receives light emitted from another circuit block. The light is incident on the light receiving element of the section and is received. One or a plurality of optical transmission lines 9 are formed between circuit blocks for transmitting optical signals as necessary, and a plurality of optical transmission lines 9 are usually formed on the entire silicon substrate 1. FIG.
FIG. 1 shows a state in which a plurality of optical transmission paths 9 are provided on the silicon substrate 1. The optical transmission line 9 may be bent in the middle as necessary, as shown in FIG. Other points are the same as those of the first embodiment, and the description is omitted.

Next, a method for forming the optical transmission line 9 will be described. Here, the first method using an organic resin resist as the material of the light transmission path 9 and the second method using SiO ₂ as the material of the light transmission path 9 will be described separately.

FIGS. 21 to 27 show a first method. In the first method, first, as shown in FIG. 21, Si ₃ N _{4 is formed on} the entire surface of the silicon substrate 1 by, for example, a CVD method.
After the film 10 is formed, a resist pattern (not shown) having a predetermined shape with an opening corresponding to the formation portion of the optical transmission path is formed thereon by lithography, and the resist pattern is used as a mask, for example, by reactive ion etching. By performing anisotropic etching by (RIE) method, Si
In ₃ N ₄ film 10 to form an opening 10a. This opening 1
The width of Oa is selected to be slightly smaller than the diameter of the optical transmission line 9 to be finally formed. Next, after removing the resist pattern, the silicon substrate 1 is etched by, for example, RIE using the Si ₃ N ₄ film 10 as a mask to form a groove 11. The cross-sectional shape of the groove 11 at this time is rectangular.

Next, as shown in FIG. 22, the silicon substrate 1 is subjected to isotropic etching, for example, wet etching, using the Si ₃ N ₄
The cross-sectional shape 1 is a semicircle having a diameter equal to the diameter of the optical transmission line 9 to be finally formed.

Next, after removing the Si ₃ N ₄ film 10 by etching (FIG. 23), an organic resin resist film 12 is applied on the silicon substrate 1 as shown in FIG. The thickness of the resist film 12 is selected according to the diameter of the finally formed optical transmission path 9.

Next, after a predetermined portion of the resist film 12 is exposed, development is performed to form a resist pattern 13 having a width slightly larger than the diameter of the groove 11 on the groove 11 as shown in FIG. Form.

Next, as shown in FIG. 26, the resist pattern 13 is reflowed by heating it to an appropriate temperature according to the type of the resist, and the upper half surface of the resist pattern 13 is made a smooth curved surface. .

Next, by performing an ashing process using, for example, oxygen plasma, the upper half surface of the resist pattern 13 is processed, so that the resist pattern 13 has a substantially circular cross-sectional shape as a whole. Thereafter, the resist pattern 13 is cured by performing, for example, vacuum drying or plasma irradiation. Thus, as shown in FIG. 27, an optical transmission line 9 made of an organic resin resist and having a substantially circular cross section is formed.

FIGS. 28 to 33 show the second method. In this second method, first, as shown in FIG. 28, Si ₃ N ₄
A film 10 is formed, and a resist pattern 14 having a predetermined shape is formed on the film 10 by lithography, and a portion corresponding to a portion where an optical transmission path is formed is opened. This resist pattern 14
Is selected to be slightly smaller than the diameter of the optical transmission line 9 to be finally formed. Next, this resist pattern 1
For example, an opening 10a is formed in the Si ₃ N ₄ film 10 by performing anisotropic etching by RIE using the mask 4 as a mask, and subsequently the silicon substrate 1 is etched by performing anisotropic etching to form the groove 11. Form. The cross-sectional shape of the groove 11 at this time is rectangular.

Next, as shown in FIG. 29, the sectional shape of the groove 11 is finally formed by performing isotropic etching, for example, wet etching, using the resist pattern 13 and the Si ₃ N ₄ film 10 as a mask. A semicircle having a diameter equal to the diameter of the optical transmission path 9 is formed.

Next, as shown in FIG. 30, the width of the resist pattern 14 is reduced to the same width as the groove 11 by performing an ashing process using, for example, oxygen plasma.

Next, as shown in FIG. 31, by etching the Si ₃ N ₄ film 10 using the resist pattern 14 as a mask, the width of the opening 10 a of the Si ₃ N ₄ film 10 is made the same as the width of the groove 11. To

Next, as shown in FIG. 32, SiO ₂ 15 is grown on the entire surface of the silicon substrate 1 by a liquid phase CVD method utilizing a sol-gel reaction. At this time, the SiO ₂
15 is obtained by setting the growth temperature to, for example, 0 ° C. and performing growth to obtain a material exhibiting high fluidity. Due to the surface tension, the groove 11 in the opening 10 a of the Si ₃ N ₄ film 10 is formed. Is spontaneously and spontaneously grown on the portion of the silicon substrate 1 having a substantially circular cross-sectional shape. Although illustration is omitted, this SiO ₂ is usually
It grows thinly on the top.

Next, an assembly using oxygen plasma, for example,
Resist pattern 14 is removed by performing a polishing process.
I do. At this time, it grew thinly on the resist pattern 14.
SiO_TwoThe film is removed by lift-off. Next, low temperature
The heat treatment at_TwoIncluded in 15
The OH groups are removed and the SiO_Two15 is solidified. this
Specifically, the heat treatment is performed, for example, at 400 ° C. for about 15 minutes.
Do. After this, Si_ThreeN_FourEtch and remove film 10
You. As a result, as shown in FIG. _TwoFrom
And an optical transmission line 9 having a substantially circular cross-sectional shape is formed.
It is.

According to the second method, since SiO ₂ , which is a heat-resistant insulator, is used as the material of the optical transmission line 9, the process temperature after the formation of the optical transmission line 9 is 1000.
It can tolerate temperatures up to about ° C and has excellent etching resistance. Therefore, the degree of freedom in the process after the formation of the optical transmission line 9 is high. Further, the resist pattern 14
By simply growing SiO ₂ by the liquid phase CVD method using the pattern of the Si ₃ N ₄ film 10 as a mask, a circular cross-section required for the optical transmission line 9 can be easily obtained.
Further, the diameter of the optical transmission line 9 can be reduced to a critical dimension determined by the resolution of lithography.

According to the seventh embodiment, the same advantages as those of the third embodiment can be obtained. In addition, the transmission of the optical signal between the circuit blocks can be performed by the optical transmission formed monolithically on the silicon substrate 1. The advantage that the road 9 can be performed reliably and with high reliability can be obtained.

Next, an optoelectronic integrated circuit device according to an eighth embodiment of the present invention will be described.

As shown in FIG. 34, in the optoelectronic integrated circuit device according to the eighth embodiment, the optical switch 7
Are formed over the circuit block and the optical transmission line 9 on both sides thereof. Other points are the same as in the seventh embodiment, and a description thereof will not be repeated.

According to the eighth embodiment, advantages similar to those of the seventh embodiment can be obtained.

In the optoelectronic integrated circuit devices according to the seventh and eighth embodiments, the case where the optical switch is provided between the circuit block and the optical transmission line has been described.
This optical switch may be provided in the middle of the optical transmission line. Therefore, the ninth embodiment of the present invention corresponding to this case will now be described.
The optoelectronic integrated circuit device according to the embodiment will be described.

As shown in FIG. 35, in the optoelectronic integrated circuit device according to the ninth embodiment, an optical switch 7 is provided in the optical transmission line 9. This optical switch 7
Are monolithically formed on the silicon substrate 1. One end of the optical transmission line 9 is connected to a light emitting / receiving unit of a certain circuit block, and the other end is connected to a light emitting / receiving unit of another circuit block. The optical transmission line 9 is made of a transparent material having a small optical signal propagation loss, such as a resist made of organic resin or SiO _2.
And the like. The optical transmission line 9 is specifically formed, for example, as shown in FIG. An optical signal emitted from the light emitting element of the light receiving / emitting section of the circuit block enters one end face of the optical transmission line 9, propagates through the inside, and is emitted from the other end face, and receives light emitted from another circuit block. The light is incident on the light receiving element of the section and is received. At this time, transmission of an optical signal is controlled by turning on / off the optical switch 7. One or a plurality of optical transmission lines 9 are formed between circuit blocks for transmitting optical signals as necessary, and a plurality of optical transmission lines 9 are usually formed on the entire silicon substrate 1. FIG. 37 shows a state in which a plurality of optical transmission lines 9 are provided on the silicon substrate 1. The optical transmission line 9 may be connected to the
As shown in FIG. 8, it may be formed by bending in the middle. Others are the same as the first embodiment,
Description is omitted.

According to the ninth embodiment, the same advantages as in the seventh embodiment can be obtained.

Next, an optoelectronic integrated circuit device according to a tenth embodiment of the present invention will be described.

As shown in FIG. 39, in the optoelectronic integrated circuit device according to the tenth embodiment, the optical switch 7
Are formed over the optical transmission lines 9 on both sides thereof. Others are the same as the seventh embodiment,
Description is omitted.

According to the tenth embodiment, advantages similar to those of the seventh embodiment can be obtained.

Next, an optoelectronic integrated circuit device according to an eleventh embodiment of the present invention will be described.

As shown in FIG. 40, FIG. 41 or FIG. 42, in the optoelectronic integrated circuit device according to the eleventh embodiment, the optical switch 7 has a rectangular cross section. Others are the same as the seventh embodiment,
Description is omitted.

According to the eleventh embodiment, advantages similar to those of the seventh embodiment can be obtained.

Next, an optoelectronic integrated circuit device according to a twelfth embodiment of the present invention will be described.

As shown in FIG. 43, in the optoelectronic integrated circuit device according to the twelfth embodiment, the optical switch 7
Are formed in a groove 16 having a rectangular cross-sectional shape formed in the silicon substrate 1 in a direction perpendicular to the optical transmission path 9. When an optical switch using an electric field effect such as an optical switch using a liquid crystal is used as the optical switch 7, a control electrode (not shown) is provided for each optical transmission line 9. It may be provided above and below, or may be provided in common for a plurality of optical transmission lines 9. Other points are the same as in the seventh embodiment, and a description thereof will not be repeated.

According to the twelfth embodiment, the same advantages as in the seventh embodiment can be obtained.

The optoelectronic integrated circuit device according to the present invention can be basically applied to any circuit.
As a specific example, the present invention can be applied to, for example, those shown in FIGS. These FIGS. 44 to 48
All or a part of the circuits shown in (1) and (2) can be configured in the same manner as the optoelectronic integrated circuit device according to the present invention, thereby enabling downsizing, high integration, and high speed of these circuits.

The example shown in FIG. 44 is based on AGP (Accelerated Gr
aphics Port) is a graphics LSI using 2
It includes a D graphics processing block, a 3D graphics processing block, a video signal processing block, an RGB image processing block, and the like (Nikkei Electronics, April 6, 1998, pp. 55-65).

The example shown in FIG. 45 is a 68-bit adder ("Design of High Performance Microprocessor Architecture Intel 80960", by Myers, Tomizawa, Shinsei Translation,
Maruzen Co., Ltd., 1990, p. 205).

The example shown in FIG. 46 is an example of a stored-program machine, which illustrates the use of a decoder and memory to implement a state machine that controls the data path.
VLSI Systems, C. Mead & L. Conway, Addison Wesley, 198
0, p.201).

The example shown in FIGS. 47 and 48 is another example of the stored program machine (Introduction to VL).
SI Systems, C. Mead & L. Conway, Addison Wesley, 198
0, p.201, p.203).

Although the embodiments of the present invention have been specifically described above, the present invention is not limited to the above embodiments, and various modifications based on the technical concept of the present invention are possible.

For example, the structures, materials, processes, and the like described in the first to twelfth embodiments are merely examples, and different structures, materials, and processes may be used as necessary.
A process or the like may be used.

Specifically, in the above-described first to twelfth embodiments, the case where a silicon substrate is used has been described, but a compound semiconductor substrate such as a GaAs substrate may be used.

[0087]

As described above, according to the present invention,
A plurality of circuit blocks are monolithically formed on a substrate, and signal transmission between at least two of the plurality of circuit blocks is performed by light, so that a small, highly integrated, and high-speed optoelectronic integrated circuit device can be realized. Can be realized.

According to the present invention, a plurality of circuit blocks are monolithically formed on a substrate, and signal transmission between at least two of the plurality of circuit blocks is performed by light, and at least two By having an optical switch monolithically formed on a substrate between circuit blocks, it is possible to easily select an optical signal transmitted between circuit blocks with small size, high integration and high speed, and to transmit information. An optoelectronic integrated circuit device capable of achieving high density can be realized.

According to the present invention, a plurality of circuit blocks are monolithically formed on a substrate, and signal transmission between at least two of the plurality of circuit blocks is performed by light, and at least two The circuit blocks are connected monolithically on the substrate by a linear optical transmission line for transmitting signals by light, and formed monolithically on the substrate in the middle of the optical transmission line. By providing an optical switch, an optoelectronic integrated circuit device that is compact, highly integrated, high-speed, and can easily select an optical signal to be transmitted between circuit blocks and can achieve high density information. Can be realized.

Further, according to the present invention, a plurality of circuit blocks are monolithically formed on a substrate, and signal transmission between at least two of the plurality of circuit blocks is performed by light, and at least two The circuit blocks are connected by a linear optical transmission line for transmitting signals by light, which is monolithically formed on the substrate, and is connected to at least one of the at least two circuit blocks and the optical circuit. By having an optical switch monolithically formed on the substrate between the transmission line and the optical switch, it is possible to easily select an optical signal transmitted between circuit blocks with small size, high integration and high speed, and An optoelectronic integrated circuit device capable of increasing the density of information can be realized.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an optoelectronic integrated circuit device according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing a first example of a light emitting / receiving section of a circuit block in the optoelectronic integrated circuit device according to the first embodiment of the present invention.

FIG. 3 is a sectional view showing a second example of the light emitting / receiving section of the circuit block in the optoelectronic integrated circuit device according to the first embodiment of the present invention.

FIG. 4 is a sectional view showing a third example of the light emitting / receiving section of the circuit block in the optoelectronic integrated circuit device according to the first embodiment of the present invention.

FIG. 5 is a sectional view for explaining the method for manufacturing the optoelectronic integrated circuit device according to the first embodiment of the present invention.

FIG. 6 is a sectional view for explaining the method for manufacturing the optoelectronic integrated circuit device according to the first embodiment of the present invention.

FIG. 7 is a perspective view showing an optoelectronic integrated circuit device according to a second embodiment of the present invention.

FIG. 8 is a cross-sectional view for explaining the method of manufacturing the optoelectronic integrated circuit device according to the second embodiment of the present invention.

FIG. 9 is a perspective view showing an optoelectronic integrated circuit device according to a third embodiment of the present invention.

FIG. 10 is an enlarged cross-sectional view showing a portion between adjacent circuit blocks in an optoelectronic integrated circuit device according to a third embodiment of the present invention.

FIG. 11 is a cross-sectional view for explaining the method for manufacturing the optoelectronic integrated circuit device according to the third embodiment of the present invention.

FIG. 12 is a perspective view showing an optoelectronic integrated circuit device according to a fourth embodiment of the present invention.

FIG. 13 is an enlarged sectional view showing a portion between circuit blocks adjacent to each other in an optoelectronic integrated circuit device according to a fourth embodiment of the present invention.

FIG. 14 is a cross-sectional view for explaining the method for manufacturing the optoelectronic integrated circuit device according to the fourth embodiment of the present invention.

FIG. 15 is an enlarged sectional view showing a portion between circuit blocks adjacent to each other in an optoelectronic integrated circuit device according to a fifth embodiment of the present invention.

FIG. 16 is an enlarged sectional view showing a portion between mutually adjacent circuit blocks in an optoelectronic integrated circuit device according to a sixth embodiment of the present invention.

FIG. 17 is an enlarged sectional view showing a connection portion between a circuit block and an optical transmission line in an optoelectronic integrated circuit device according to a seventh embodiment of the present invention.

FIG. 18 is a perspective view showing a first example of an optical transmission line in an optoelectronic integrated circuit device according to a seventh embodiment of the present invention.

FIG. 19 is a perspective view showing a second example of the optical transmission line in the optoelectronic integrated circuit device according to the seventh embodiment of the present invention.

FIG. 20 is a perspective view showing a third example of the optical transmission line in the optoelectronic integrated circuit device according to the seventh embodiment of the present invention.

FIG. 21 is a sectional view illustrating a first method for forming an optical transmission line in an optoelectronic integrated circuit device according to a seventh embodiment of the present invention.

FIG. 22 is a sectional view for explaining a first method for forming an optical transmission line in the optoelectronic integrated circuit device according to the seventh embodiment of the present invention.

FIG. 23 is a cross-sectional view for explaining a first method for forming an optical transmission line in an optoelectronic integrated circuit device according to a seventh embodiment of the present invention.

FIG. 24 is a cross-sectional view for explaining a first method for forming an optical transmission line in an optoelectronic integrated circuit device according to a seventh embodiment of the present invention.

FIG. 25 is a cross-sectional view for explaining a first method for forming an optical transmission line in an optoelectronic integrated circuit device according to a seventh embodiment of the present invention.

FIG. 26 is a cross-sectional view for explaining a first method for forming an optical transmission line in the optoelectronic integrated circuit device according to the seventh embodiment of the present invention.

FIG. 27 is a cross-sectional view for explaining a first method for forming an optical transmission line in an optoelectronic integrated circuit device according to a seventh embodiment of the present invention.

FIG. 28 is a sectional view for explaining a second method for forming an optical transmission line in the optoelectronic integrated circuit device according to the seventh embodiment of the present invention.

FIG. 29 is a sectional view for explaining a second method for forming an optical transmission line in the optoelectronic integrated circuit device according to the seventh embodiment of the present invention.

FIG. 30 is a sectional view for explaining a second method for forming an optical transmission line in the optoelectronic integrated circuit device according to the seventh embodiment of the present invention.

FIG. 31 is a sectional view for explaining a second method for forming an optical transmission line in the optoelectronic integrated circuit device according to the seventh embodiment of the present invention.

FIG. 32 is a sectional view for explaining a second method for forming an optical transmission line in the optoelectronic integrated circuit device according to the seventh embodiment of the present invention.

FIG. 33 is a cross-sectional view for explaining a second method for forming an optical transmission line in the optoelectronic integrated circuit device according to the seventh embodiment of the present invention.

FIG. 34 is an enlarged sectional view showing a connection portion between a circuit block and an optical transmission line in an optoelectronic integrated circuit device according to an eighth embodiment of the present invention.

FIG. 35 is an enlarged sectional view showing an optical transmission line in a portion where an optical switch is provided in an optoelectronic integrated circuit device according to a ninth embodiment of the present invention.

FIG. 36 is a perspective view showing a first example of an optical transmission line in an optoelectronic integrated circuit device according to a ninth embodiment of the present invention.

FIG. 37 is a perspective view showing a second example of the optical transmission line in the optoelectronic integrated circuit device according to the ninth embodiment of the present invention.

FIG. 38 is a perspective view showing a third example of the optical transmission line in the optoelectronic integrated circuit device according to the ninth embodiment of the present invention.

FIG. 39 is an enlarged cross-sectional view showing an optical transmission line in a portion where an optical switch is provided in an optoelectronic integrated circuit device according to a tenth embodiment of the present invention.

FIG. 40 is a perspective view showing a first example of an optical transmission line in an optoelectronic integrated circuit device according to an eleventh embodiment of the present invention.

FIG. 41 is a perspective view showing a second example of the optical transmission line in the optoelectronic integrated circuit device according to the eleventh embodiment of the present invention.

FIG. 42 is a perspective view showing a third example of the optical transmission line in the optoelectronic integrated circuit device according to the eleventh embodiment of the present invention.

FIG. 43 is an enlarged perspective view showing an optical transmission path in a portion where an optical switch is provided in an optoelectronic integrated circuit device according to a twelfth embodiment of the present invention.

FIG. 44 is a schematic diagram showing a first example of a circuit to which the optoelectronic integrated circuit device according to the present invention can be applied;

FIG. 45 is a schematic diagram showing a second example of a circuit to which the optoelectronic integrated circuit device according to the present invention can be applied.

FIG. 46 is a schematic diagram showing a third example of a circuit to which the optoelectronic integrated circuit device according to the present invention can be applied.

FIG. 47 is a schematic diagram showing a fourth example of a circuit to which the optoelectronic integrated circuit device according to the present invention can be applied;

FIG. 48 is a schematic diagram showing a fifth example of a circuit to which the optoelectronic integrated circuit device according to the present invention can be applied;

[Explanation of symbols]

1 ... silicon substrate, A ₁ , A ₂ , B ₁ , B ₂ ...
Circuit block, a _1, b ₁ ··· light receiving and emitting unit, 2, 3, 4
... reflector, 6 ... optically transparent film, 7 ... optical switch, 8 ... passivation film, 9 ... optical transmission line, 10 ... Si ₃ N ₄ film, 10a ···Aperture,
11 ... groove, 13, 14 ... resist pattern, 1
5 ... SiO ₂

Claims (27)

[Claims] A plurality of circuit blocks are monolithically formed on a substrate, a signal is transmitted between at least two of the plurality of circuit blocks by light, and the plurality of circuit blocks are connected to each other. An opto-electronic integrated circuit device, wherein transmission of a signal inside each circuit block is performed through a wiring made of a conductor. 2. The optoelectronic integrated circuit device according to claim 1, wherein said at least two circuit blocks have a light emitting element and / or a light receiving element. 3. The optoelectronic integrated circuit device according to claim 1, wherein the region between the at least two circuit blocks is made of vacuum, air, or an optically transparent material. 4. The optoelectronic integrated circuit device according to claim 3, wherein said optically transparent substance is a dielectric. 5. The optoelectronic integrated circuit device according to claim 1, wherein signal transmission by light between said at least two circuit blocks is performed by a single signal or a multiplex signal. 6. The optoelectronic integrated circuit device according to claim 1, wherein the transmission of the signal by light between the at least two circuit blocks is performed by a holographic signal. 7. The optoelectronic integrated circuit device according to claim 1, wherein each of the plurality of circuit blocks includes at least one electronic element. 8. The optoelectronic integrated circuit device according to claim 1, wherein said substrate is a silicon substrate, a compound semiconductor substrate, an SOI substrate, or an insulating substrate. 9. A plurality of circuit blocks are monolithically formed on a substrate, signal transmission between at least two of the plurality of circuit blocks is performed by light, and the plurality of circuit blocks are An optoelectronic integrated circuit device in which transmission of signals inside each circuit block is performed through wiring made of a conductor, having an optical switch monolithically formed on the substrate between the at least two circuit blocks. An optoelectronic integrated circuit device characterized by the above-mentioned. 10. The optoelectronic integrated circuit device according to claim 9, wherein said optical switch is an optical switch using a field effect, a semiconductor optical switch, or an optical switch using an organic thin film. 11. The optoelectronic integrated circuit device according to claim 9, wherein said optical switch is an optical switch using liquid crystal. 12. A plurality of circuit blocks are monolithically formed on a substrate, a signal is transmitted between at least two of the plurality of circuit blocks by light, and the plurality of circuit blocks are connected to each other. The transmission of signals inside each circuit block is an optoelectronic integrated circuit device performed through wiring made of a conductor, and the signal transmission formed monolithically on the substrate between the at least two circuit blocks. An opto-electronic integrated circuit device, wherein the opto-electronic integrated circuit device is connected by a linear optical transmission line for performing light, and has an optical switch monolithically formed on the substrate in the middle of the optical transmission line. 13. The optoelectronic integrated circuit device according to claim 12, wherein said optical switch is an optical switch using an electric field effect, a semiconductor optical switch, or an optical switch using an organic thin film. 14. The optoelectronic integrated circuit device according to claim 12, wherein said optical switch is an optical switch using liquid crystal. 15. The optoelectronic integrated circuit device according to claim 12, wherein said optical transmission line is made of an organic material. 16. The optoelectronic integrated circuit device according to claim 12, wherein said optical transmission path is made of a resist made of an organic resin. 17. The optoelectronic integrated circuit device according to claim 12, wherein said optical transmission line is made of an inorganic material. 18. The optoelectronic integrated circuit device according to claim 12, wherein said optical transmission line is made of silicon oxide or silicon nitride. 19. The optoelectronic integrated circuit device according to claim 12, wherein said optical transmission line has a substantially circular cross section. 20. A plurality of circuit blocks are monolithically formed on a substrate, signals are transmitted between at least two of the plurality of circuit blocks by light, and the plurality of circuit blocks are connected to each other. The transmission of signals inside each circuit block is an optoelectronic integrated circuit device performed through wiring made of a conductor, and the signal transmission formed monolithically on the substrate between the at least two circuit blocks. They are connected by a linear optical transmission line for performing light, and are monolithically formed on the substrate between at least one of the at least two circuit blocks and the optical transmission line. An optoelectronic integrated circuit device comprising an optical switch. 21. The optoelectronic integrated circuit device according to claim 20, wherein the optical switch is an optical switch using a field effect, a semiconductor optical switch, or an optical switch using an organic thin film. 22. The optoelectronic integrated circuit device according to claim 20, wherein said optical switch is an optical switch using liquid crystal. 23. The optoelectronic integrated circuit device according to claim 20, wherein said optical transmission line is made of an organic material. 24. The optoelectronic integrated circuit device according to claim 20, wherein said optical transmission line is made of an organic resin resist. 25. The optoelectronic integrated circuit device according to claim 20, wherein said optical transmission line is made of an inorganic material. 26. The optoelectronic integrated circuit device according to claim 20, wherein said optical transmission line is made of silicon oxide or silicon nitride. 27. The optoelectronic integrated circuit device according to claim 20, wherein said optical transmission line has a substantially circular cross section.